The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TO263-3EV-VREG Microchip Technology Inc BOARD EVAL TO220-3/TO263-3 VREG
TO263-5EV-VREG Microchip Technology Inc EVAL BOARD VREG TO220-5/TO263-5
MIC29201-4.8WU-TR Microchip Technology Inc IC REG LDO 4.85V 0.4A TO263-5
MIC29201-5.0WU-TR Microchip Technology Inc IC REG LDO 5V 0.4A TO263-5
MIC29201-12WU-TR Microchip Technology Inc IC REG LDO 12V 0.4A TO263-5
MIC29201-3.3WU-TR Microchip Technology Inc IC REG LDO 3.3V 0.4A TO263-5

P-TO263-3-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 14N03LA

Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB14N03LA P-TO263-3-2 Q67042-S4156 14N03LA IPI14N03LA P-TO262 , IPB14N03LA IPI14N03LA, IPP14N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 62 , |V DS|>2|I D|R DS(on)max, I D=30 A 1) Current is limited by bondwire; with an R thJC= 3.2 K/W


Original
PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
1999 - 04N03LA

Abstract: IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB04N03LA P-TO263-3-2 Q67042-S4181 04N03LA IPI04N03LA P-TO262 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.2 page 8 , 32 Gate plateau voltage V plateau - 3,3 - Gate charge total, sync. FET Q g(sync , parameter: V GS 20 160 3V 10 V 3.8 V 3.5 V 4.1 V 4.5 V 140 3.2 V 15 120


Original
PDF IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING
1999 - 14N03L

Abstract: 14N03LA 14N03
Text: thermal resistance · 175 °C operating temperature · dv /dt rated P-TO263-3-2 1) Product Summary V DS R , IPI14N03LA IPP14N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4156 , IPB14N03LA IPI14N03LA, IPP14N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 µA V 3.2 62 40 K/W Values typ. max. Unit 17 , by bondwire; with an R thJC= 3.2 K/W the chip is able to carry 45 A. See figure 3 T j,max=150 °C and


Original
PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03LA 14N03
2005 - BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: , 32 -bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , dry pack Multichannel network interface controller for HDLC with 32 channels extended (MUNICH32X), mini dry pack Multichannel network interface controller for HDLC with 32 channels extended (MUNICH32X , controller for HDLC with 4 × 32 channels extended (MUNICH128X), mini dry pack Multichannel network interface controller for HDLC with 4 × 32 channels extended (MUNICH128X), ­40° C to 85° C operating


Original
PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: 7 21 1 26 28 46 2 Microcontrollers Microcontrollers, 32 -bit . . . . . . . . . . . . , request - EPIC®-S: Extended PCM interface controller (16 ISDN or 32 analog subscribers), tape & reel EPIC®-S: Extended PCM interface controller (16 ISDN or 32 analog subscribers), tube EPIC®-1: Extended PCM interface controller ( 32 ISDN or 64 analog subscribers), tube EPIC®-1: Extended PCM interface controller ( 32 ISDN or 64 analog subscribers), tape & reel ELIC®: Extended line card interface


Original
PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
1999 - 03N03LA

Abstract: IPB03N03LA IPI03N03LA IPP03N03LA P-TO262-3-1
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB03N03LA P-TO263-3-2 Q67042-S4178 03N03LA IPI03N03LA P-TO262 , IPB03N03LA IPI03N03LA, IPP03N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , parameter: V GS parameter: V GS 12 160 10 V 4.5 V 4.1 V 140 3.2 V 2.8 V 3.5 V 3.8 , 3.2 V 4.5 V 40 10 V 3V 20 2 2.8 V 0 0 0 1 2 0 3 20 40 V


Original
PDF IPB03N03LA IPI03N03LA, IPP03N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4178 03N03LA 03N03LA IPB03N03LA IPI03N03LA IPP03N03LA P-TO262-3-1
1999 - 09n03la

Abstract: No abstract text available
Text: P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 8.9 50 V mW A P-TO262-3-1 P-TO220-3-1 Type IPB09N03LA IPI09N03LA IPP09N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220 , P-TO263-3-2 : Outline Footprint Packaging P-TO262-3-1: Outline Dimensions in mm Rev. 1.1 page 8 , resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 30 3.2 V 3.5 V 3.8 V 4.1 V 4.5 V 25 R DS(on) [mW] 4.1 V I D [A] 40 3.8 V 15 30 20 10 0 0 1 2 3 3.5 V 10 10 V 3.2 V 3V 2.8 V


Original
PDF IPB09N03LA IPI09N03LA, IPP09N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI09N03LA P-TO263-3-2 09n03la
1999 - 05N03L

Abstract: No abstract text available
Text: P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 4.6 80 V mW A P-TO262-3-1 P-TO220-3-1 Type IPB05N03LA IPI05N03LA IPP05N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220 , page 7 2003-01-31 IPB05N03LA IPI05N03LA, IPP05N03LA Package Outline P-TO263-3-2 : Outline , . drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 3V 3.2 V 3.5 V 3.8 V 4.1 V 4.5 V , 3 3.5 V 10 5 3.2 V 3V 2.8 V 10 V 0 0 20 40 60 80 100 120 140 160 V DS [V] I D [A


Original
PDF IPB05N03LA IPI05N03LA, IPP05N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI05N03LA P-TO263-3-2 05N03L
1999 - 04N03LA

Abstract: SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB04N03LA P-TO263-3-2 Q67042-S4181 04N03LA IPI04N03LA P-TO262 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.3 page 8 , 3.2 3.9 - 1.1 - 43 85 - S Gate resistance RG Transconductance , 32 Gate plateau voltage V plateau - 3.3 - Gate charge total, sync. FET Q g(sync


Original
PDF IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1
1999 - 04N03L

Abstract: 04N03LA
Text: P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 3.9 80 V mW A P-TO262-3-1 P-TO220-3-1 Type IPB04N03LA IPI04N03LA IPP04N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220 , P-TO263-3-2 : Outline Footprint Packaging P-TO262-3-1: Outline Dimensions in mm Rev. 1.1 page 8 , 5.1 3.5 3.2 1.1 85 100 100 6.7 6.4 4.2 3.9 W S nA mW 1) Current is limited by bondwire; with , GS=0 V V DD=15 V, I D=40 A, V GS=0 to 5 V 10 4.6 7 12 24 3.3 20 27 13 6.2 11 17 32 27 35 V nC nC C


Original
PDF IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI04N03LA P-TO263-3-2 04N03L 04N03LA
1999 - 06n03la

Abstract: 06n03la datasheet, download 06N03L 59-MID IPP06 IPP06N03LA IPI06N03LA IPB06N03LA SMD MARKING CODE transistor 06n03
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB06N03LA P-TO263-3-2 Q67042-S4146 06N03LA IPI06N03LA P-TO262 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.3 page 8 , 7 9 Gate charge at threshold Q g(th) - 3.2 4.2 Gate to drain charge Q gd , 120 3.2 V 4.5 V 10 V 3.5 V 3.8 V 4.1 V 3V 100 20 80 R DS(on) [m] I D


Original
PDF IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4146 06N03LA 06n03la 06n03la datasheet, download 06N03L 59-MID IPP06 IPP06N03LA IPI06N03LA IPB06N03LA SMD MARKING CODE transistor 06n03
1999 - 06n03la

Abstract: 06N03L Q67042-S4146
Text: P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 5.9 50 V mW A P-TO262-3-1 P-TO220-3-1 Type IPB06N03LA IPI06N03LA IPP06N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220 , Outline P-TO263-3-2 : Outline Footprint Packaging P-TO262-3-1: Outline Dimensions in mm Rev. 1.1 , GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 7 3.2 5 8 16 3.3 14 18 9 4.2 7 12 22 19 22 V nC nC C iss C , resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 3.2 V 3V 3.5 V 3.8 V 4.1 V 100 20 80


Original
PDF IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI06N03LA P-TO263-3-2 06n03la 06N03L Q67042-S4146
1999 - 05N03LA

Abstract: Q67042-S4141 IPB05N03LA IPI05N03LA IPP05N03LA D55 SMD CODE MARKING 05N03L
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB05N03LA P-TO263-3-2 Q67042-S4141 05N03LA IPI05N03LA P-TO262 , IPB05N03LA IPI05N03LA, IPP05N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , : V GS parameter: V GS 25 160 3.2 V 10 V 3V 140 3.5 V 3.8 V 4.1 V 4.5 V , 40 5 10 V 3.2 V 20 3V 2.8 V 0 0 0 1 2 0 3 20 40 V DS [V


Original
PDF IPB05N03LA IPI05N03LA, IPP05N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4141 05N03LA 05N03LA Q67042-S4141 IPB05N03LA IPI05N03LA IPP05N03LA D55 SMD CODE MARKING 05N03L
1999 - 03n03la

Abstract: C3385 Q67042-S4179 IPB03N03LA IPI03N03LA IPP03N03LA smd 7027
Text: thermal resistance P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 · 175 °C operating temperature · dv /dt rated Type Package Ordering Code Marking IPB03N03LA P-TO263-3-2 Q67042-S4178 , IPB03N03LA IPI03N03LA, IPP03N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , 3.2 V 3.8 V 4.1 V 140 3V 10 3.8 V 120 8 R DS(on) [m] I D [A] 100 3.5 V 80 60 6 4.1 V 4 3.2 V 4.5 V 40 10 V 3V 20 2 2.8 V 0 0 0 1


Original
PDF IPB03N03LA IPI03N03LA, IPP03N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4178 03N03LA 03n03la C3385 Q67042-S4179 IPB03N03LA IPI03N03LA IPP03N03LA smd 7027
1999 - 05n03l

Abstract: 05N03 s4141 05N03LA Q67042-S4141 SMD MARKING CODE transistor IPB05N03LA IPI05N03LA IPP05N03LA
Text: thermal resistance P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 · 175 °C operating temperature · dv /dt rated Type Package Ordering Code Marking IPB05N03LA P-TO263-3-2 Q67042-S4141 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.4 page 8 , time tr - 27 38 Turn-off delay time t d(off) - 32 45 Fall time tf - , V 3.5 V 3.2 V 120 3.8 V 4.1 V 3V 20 R DS(on) [m] 4.1 V 100 I D [A


Original
PDF IPB05N03LA IPI05N03LA, IPP05N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4141 05N03LA 05n03l 05N03 s4141 05N03LA Q67042-S4141 SMD MARKING CODE transistor IPB05N03LA IPI05N03LA IPP05N03LA
1999 - 14N03LA

Abstract: 14N03 14N03L IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB14N03LA P-TO263-3-2 Q67042-S4156 14N03LA IPI14N03LA P-TO262 , IPB14N03LA IPI14N03LA, IPP14N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging , |V DS|>2|I D|R DS(on)max, I D=30 A 1) Current is limited by bondwire; with an R thJC= 3.2 K/W , 3.2 V 3V 3.5 V 3.8 V 4.1 V 4.5 V 10 V 50 50 4.5 V 40 R DS(on) [m] I D


Original
PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14N03 14N03L IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
1999 - 09n03la

Abstract: P10001 IPB09N03LA
Text: thermal resistance · 175 °C operating temperature · dv /dt rated P-TO263-3-2 1) Product Summary V DS R , IPI09N03LA IPP09N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4151 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.4 page 8 2004-03-23 , , V DS=15 V, f =1 MHz 1235 474 61 8.9 73 22 3.2 1642 630 92 13 109 33 4.8 ns pF Values typ. max. Unit , (on)=f(I D); T j=25 °C parameter: V GS 30 3.2 V 3.5 V 3.8 V 4.1 V 60 4.1 V 25 50 20 40


Original
PDF IPB09N03LA IPI09N03LA, IPP09N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI09N03LA P-TO263-3-2 09n03la P10001
1999 - 7027 SMD MARKING CODE

Abstract: smd 7027 IPB03N03LA
Text: P-TO263-3-2 Type IPB03N03LA Package P-TO263-3-2 Ordering Code Q67042-S4178 Marking 03N03LA , 2005-02-08 IPB03N03LA Package Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm , parameter: V GS 12 2.8 V 3V 3.2 V 3.5 V 3.8 V 140 10 120 8 I D [A] 3.5 V R DS(on) [m ] 100 80 6 4.1 V 60 3.2 V 4 4.5 V 40 3V 10 V 2 20 2.8 V 0 0 1 2 3 0


Original
PDF IPB03N03LA P-TO263-3-2 Q67042-S4178 03N03LA 7027 SMD MARKING CODE smd 7027 IPB03N03LA
1999 - IPB14N03LA

Abstract: P-TO263-3-2 14N03 14n03la
Text: P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 13.6 30 V mW A P-TO262-3-1 P-TO220-3-1 Type IPB14N03LA IPI14N03LA IPP14N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220 , Package Outline P-TO263-3-2 : Outline Footprint Packaging P-TO262-3-1: Outline Dimensions in mm , , I D=30 A 25 1.2 1.6 0.1 2 1 µA V 3.2 62 40 K/W Values typ. max. Unit 17 10 10 18.5 18.2 11.6 , thJC= 3.2 K/W the chip is able to carry 45 A. See figure 3 T j,max=150 °C and duty cycle D <0.25 for V


Original
PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03 14n03la
1999 - 04N03LA

Abstract: IPB04N03LA IPI04N03LA IPP04N03LA
Text: thermal resistance P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 · 175 °C operating temperature · dv /dt rated Type Package Ordering Code Marking IPB04N03LA P-TO263-3-2 Q67042-S4181 , Outline P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.4 page 8 , 4.2 V GS=10 V, I D=55 A, SMD version - 3.2 3.9 - 1.1 - 43 85 - S , - 12 17 Gate charge total Qg - 24 32 Gate plateau voltage V plateau -


Original
PDF IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA IPB04N03LA IPI04N03LA IPP04N03LA
1999 - 03n60s5

Abstract: No abstract text available
Text: Final data SPP03N60S5 SPB03N60S5 VDS RDS(on) ID P-TO263-3-2 Cool MOSTM Power Transistor , Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance 600 1.4 3.2 V A P-TO220-3-1 Type SPP03N60S5 SPB03N60S5 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4184 , Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 3.2 2 Unit A Pulsed drain , Ptot Tj , Tstg 5.7 100 0.2 3.2 ±20 38 -55. +150 A V W °C mJ Avalanche energy, repetitive tAR


Original
PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5
1999 - P-TO263-3-2

Abstract: No abstract text available
Text: Improved transconductance VDS RDS(on) ID 600 1.4 3.2 V A P-TO263-3-2 Type Package Ordering Code Marking 03N60S5 SPB03N60S5 P-TO263-3-2 Q67040-S4197 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 3.2 2 Unit A Pulsed drain , 5.7 100 0.2 3.2 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 3.2 A , Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 3.2 A, Tj = 125 °C Symbol dv


Original
PDF SPB03N60S5 P-TO263-3-2 03N60S5 SPB03N60S5 Q67040-S4197 P-TO263-3-2
1999 - Not Available

Abstract: No abstract text available
Text: (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB03N03LA P-TO263-3-2 Q67042-S4178 03N03LA IPI03N03LA P-TO262 , . 1.3 page 7 2003-12-18 IPB03N03LA IPI03N03LA, IPP03N03LA Package Outline P-TO263-3-2 , parameter: V GS parameter: V GS 12 160 10 V 4.5 V 4.1 V 140 3.2 V 2.8 V 3.5 V 3.8 , 4 3.2 V 4.5 V 40 10 V 3V 20 2 2.8 V 0 0 0 1 2 0 3 20


Original
PDF IPB03N03LA IPI03N03LA, IPP03N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4178 03N03LA
1999 - 09n03la

Abstract: IPB09N03LA 09N03 IPI09N03LA IPP09N03LA Q67042-S4151
Text: (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance P-TO263-3-2 P-TO262 , Marking IPB09N03LA P-TO263-3-2 Q67042-S4151 09N03LA IPI09N03LA P-TO262 , P-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.2 page 8 2003-06-18 , 80 3.2 V 10 V 70 3.5 V 3.8 V 4.1 V 4.5 V 4.5 V 25 60 20 4.1 V R DS(on) [m] I D [A] 50 40 3.8 V 30 15 10 3.5 V 20 10 V 5 3.2 V 10


Original
PDF IPB09N03LA IPI09N03LA, IPP09N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4151 09N03LA 09n03la IPB09N03LA 09N03 IPI09N03LA IPP09N03LA Q67042-S4151
1999 - 2N03L13

Abstract: 2N03L diode d21 SPB42N03S2L-13 TRANSISTOR SMD MARKING CODE 42 INFINEON PART MARKING SPP42N03S2L-13 F42A Datasheet 2N03L13 spp42n
Text: · 175 °C operating temperature P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 · Avalanche rated · , -3-1 Q67042-S4034 2N03L13 SPB42N03S2L-13 P-TO263-3-2 Q67042-S4035 2N03L13 SPI42N03S2L , -13 SPP42N03S2L-13 SPB42N03S2L-13 Package Outline P-TO263-3-2 : Outline Footprint Packaging P-TO262 , ] 8 12 16 20 24 28 32 36 Q gate [nC] 15 Drain-source breakdown voltage , ] 32 31 V g s(th) 30 29 Q g (th) 28 Q sw Q gs 27 -60 -20 20 60 100


Original
PDF SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Q67042-S4034 2N03L13 2N03L13 2N03L diode d21 SPB42N03S2L-13 TRANSISTOR SMD MARKING CODE 42 INFINEON PART MARKING SPP42N03S2L-13 F42A Datasheet 2N03L13 spp42n
Supplyframe Tracking Pixel