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1997 - SPD08N05L

Abstract: SPU08N05L P-TO252
Text: SPD08N05L SPU08N05L Preliminary data SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · dv/dt rated · 175°C operating temperature Type VDS ID RDS(on) Package Ordering Code SPD08N05L 55 V 8.4 A 0.18 P-TO252 Q67000-. . . . - . . SPU08N05L 55 V 8.4 A 0.18 P-TO251 Q67000-. . . . - . . Maximum Ratings Parameter , Preliminary data SPD08N05L SPU08N05L Package Outlines P-TO252 Dimension in mm P-TO251 Dimension


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PDF SPD08N05L SPU08N05L P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD08N05L SPU08N05L P-TO252
1999 - smd transistor code 18W

Abstract: smd diode code 18W 04n60c2 transistor SMD MARKING CODE 18w 18w smd transistor SMD Transistor 18W 04N60 04N60C SPD04N60C2 SPU04N60C2
Text: immunity P-TO251 Type Package Ordering Code Marking SPD04N60C2 P-TO252 Q67040-S4307 04N60C2 SPU04N60C2 P-TO251 Q67040-S4306 P-TO252 04N60C2 Maximum Ratings, at T j = 25 °C , characteristics Page 10 2000-05-08 SPD04N60C2 SPU04N60C2 Preliminary data P-TO251 (I-Pak


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PDF SPD04N60C2 SPU04N60C2 P-TO251 P-TO252 Q67040-S4307 04N60C2 Q67040-S4306 smd transistor code 18W smd diode code 18W 04n60c2 transistor SMD MARKING CODE 18w 18w smd transistor SMD Transistor 18W 04N60 04N60C SPD04N60C2 SPU04N60C2
1999 - infineon 07n60s5

Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Text: P-TO251-3-1 ·=Improved noise immunity ·=Former development designation: SPUx3N60S5/SPDx3N60S5 Type Package Ordering Code SPU07N60S5 P-TO251-3-1 Q67040-S4196 07N60S5 SPD07N60S5 P-TO252 , T U 0.26 - 1.02 - 0.0102 - 0.0402 - P-TO251 (I-Pak) dimensions symbol [mm


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PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
1999 - 07n03l

Abstract: transistor 07N03L DIODE 07n03l 07N03 P-TO252 IPD07N03L IPU07N03L max2958
Text: IPD07N03L IPU07N03L Preliminary data OptiMOS=Buck converter series Product Summary Feature VDS 30 V Logic Level RDS(on) 6.8 m Low on-resistance RDS(on) ID 30 A P-TO251 Excellent Gate Charge x RDS(on) product (FOM) N-Channel P-TO252 Superior thermal resistance 175°C operating temperature dv/dt rated Ideal for fast switching buck , Q67042-S4029 07N03L IPU07N03L P-TO251 Q67042-S4105 07N03L Maximum Ratings,at Tj = 25 °C


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PDF IPD07N03L IPU07N03L P-TO251 P-TO252 Q67042-S4029 07N03L 07n03l transistor 07N03L DIODE 07n03l 07N03 P-TO252 IPD07N03L IPU07N03L max2958
1998 - P-TO252

Abstract: SPD28N05L SPU28N05L v8030
Text: SPD28N05L SPU28N05L Preliminary data SIPMOS ® Power Transistor · N channel · Enhancement mode · Logic Level · Avalanche-rated · dv/dt rated Pin 1 · 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS(on) Package Ordering Code SPD28N05L 55 V 28 A 0.05 P-TO252 Q67000-. . . . SPU28N05L 55 V 28 A 0.05 P-TO251 , P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 13/Nov/1997


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PDF SPD28N05L SPU28N05L P-TO252 Q67000-. P-TO251 13/Nov/1997 P-TO252 SPD28N05L SPU28N05L v8030
1999 - 07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent smd transistor 12W 55 SPU07N60C2 SPD07N60C2
Text: capacitances · Improved noise immunity P-TO251 Type Package Ordering Code Marking SPD07N60C2 P-TO252 Q67040-S4312 07N60C2 SPU07N60C2 P-TO251 Q67040-S4311 P-TO252 , SPD07N60C2 SPU07N60C2 Preliminary data P-TO251 (I-Pak) dimensions symbol [mm] [inch] min


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PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent smd transistor 12W 55 SPU07N60C2 SPD07N60C2
1999 - 05N03LA

Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 P-TO251 S4230 diode SMD marking code 27 TRANSISTOR SMD MARKING CODE ag IPD05N03LA
Text: P-TO252-3-11 P-TO252-3-23 P-TO252-3-23 Q67042-S 05N03LA P-TO251-3-11 P-TO251-3-21 IPS05N03LA Ordering Code Q67042-S4144 P-TO251-3-11 Q67042-S4194 Q67042-S 05N03LA Q67042-S4244 Q67042-S4230 IPU05N03LA Marking 05N03LA P-TO251-3-21 05N03LA Q67042-S4230 05N03LA 05N03LA , IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Package Outline P-TO251-3-11 : Outline P-TO251-3-21


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PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l 05N03 P-TO252-3-11 P-TO252 P-TO251 S4230 diode SMD marking code 27 TRANSISTOR SMD MARKING CODE ag IPD05N03LA
1999 - 03N60C3

Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
Text: ·=Periodic avalanche rated ID 3.2 A · Extreme dv/dt rated P-TO251 P-TO252 ·=High peak , Ordering Code Marking SPD03N60C3 P-TO252 Q67040-S4421 03N60C3 SPU03N60C3 P-TO251 - , switching characteristics Page 11 2001-06-18 SPD03N60C3 SPU03N60C3 Preliminary data P-TO251


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PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
2006 - 05N03LA

Abstract: 05n03 P-TO252-3-11 IPU05N03LA IPS05N03LA IPF05N03LA IPD05N03LA marking CODE R SMD DIODE fet to251 05N03L
Text: Package P-TO252-3-11 P-TO251-3-11 P-TO252-3-23 Q67042-S 05N03LA P-TO251-3-11 P-TO251-3-1 IPU05N03LA Marking 05N03LA P-TO251-3-21 05N03LA Q67042-S4230 05N03LA 05N03LA 05N03LA


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PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 P-TO252-3-11 marking CODE R SMD DIODE fet to251 05N03L
1999 - 07n60c3

Abstract: 07N60
Text: ) ID P-TO251-3-1 650 0.6 7.3 V A P-TO252-3-1 Type SPD07N60C3 SPU07N60C3 Package P-TO252-3-1 P-TO251-3-1 Ordering Code Q67040-S4423 - Marking 07N60C3 07N60C3 Maximum Ratings, at , SPU07N60C3 P-TO251 (I-Pak) dimensions symbol min A B C D E F G H K L M N 6.47 5.25 4.19 0.63 [mm] max


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PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07N60
1999 - 03N60C3

Abstract: SPD03N60C3
Text: current capability P-TO251 P-TO252 ·=Improved transconductance ·=150 °C operating temperature , SPU03N60C3 P-TO251 - 03N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter , switching characteristics Page 11 2002-06-07 SPD03N60C3 SPU03N60C3 Preliminary data P-TO251


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PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 SPD03N60C3
1998 - d2422

Abstract: P-TO252 SPD08N10 SPU08N10
Text: SPD08N10 Preliminary data SPU08N10 SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS(on) Package Ordering Code SPD08N10 100 V 8.4 A 0.3 P-TO252 Q67000-. . . - . . SPU08N10 100 V 8.4 A 0.3 P-TO251 Q67000-. . . - . . Maximum Ratings Parameter Symbol , P-TO251 Dimension in mm Semiconductor Group 9 23/Jan/1998 Siemens


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PDF SPD08N10 SPU08N10 P-TO252 Q67000-. P-TO251 23/Jan/1998 d2422 P-TO252 SPD08N10 SPU08N10
1999 - Not Available

Abstract: No abstract text available
Text: SPU06N80C2 P-TO251-3-1 P-TO252 A P-TO251-3-1 - SPD06N80C2 6 - - Marking Maximum , 2000-01-12 SPU06N80C2 SPD06N80C2 Target data sheet P-TO251 (I-Pak) dimensions symbol [mm


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PDF SPU06N80C2 SPD06N80C2 P-TO252 P-TO251-3-1 P-TO251-3-1
1999 - 09N03

Abstract: 09n03la IPD09N03LA 09N03L 09N03LA equivalent IPU09N03LA JESD22 P-TO252-3-11
Text: Excellent gate charge x R DS(on) product (FOM) P-TO252-3-11 · Very low on-resistance R DS(on) P-TO251-3-21 , Ordering Code Marking IPD09N03LA P-TO252-3-11 Q67042-S4154 09N03LA IPU09N03LA P-TO251-3-21 , Package Outline P-TO251-3-21 : Outline Dimensions in inch [mm] Rev. 1.4 page 9 2004-02-04


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PDF IPD09N03LA IPU09N03LA P-TO252-3-11 P-TO251-3-21 Q67042-S4154 09N03LA 09N03 09n03la IPD09N03LA 09N03L 09N03LA equivalent IPU09N03LA JESD22 P-TO252-3-11
1999 - 02N60S5

Abstract: 02N60 SPD02N60S5 SPU02N60S5
Text: Package P-TO251-3-1 P-TO252 Marking 02N60S5 02N60S5 Ordering Code Q67040-S4226 Q67040-S4213 , 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402 - P-TO251 (I-Pak) dimensions symbol min A B C D E F G H K


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PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
1999 - SPD04N60C3

Abstract: 04n60c3
Text: Preliminary data SPD04N60C3 SPU04N60C3 Cool MOSTM=Power Transistor Feature ·=New revolutionary high voltage technology · Ultra low gate charge ·=Periodic avalanche rated · Extreme dv/dt rated ·=High peak current capability ·=Improved transconductance ·=150 °C operating temperature P-TO251 C O , Type SPD04N60C3 SPU04N60C3 Package P-TO252 P-TO251 Ordering Code Q67040-S4412 - Marking , characteristics Page 11 2001-11-16 Preliminary data SPD04N60C3 SPU04N60C3 P-TO251 (I-Pak


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PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3
1999 - 02N60C3

Abstract: P-TO252 SPD02N60C3 SPU02N60C3
Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOSTM=Power Transistor = Feature ·=New revolutionary high voltage technology Product Summary · Ultra low gate charge VDS @ Tjmax ·=Periodic avalanche rated RDS(on) · Extreme dv/dt rated ID ·=Ultra low effective capacitances P-TO251 , Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - , 2002-06-10 SPD02N60C3 SPU02N60C3 Preliminary data P-TO251 (I-Pak) dimensions symbol [mm


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PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3
1999 - 04N60C3

Abstract: 04N60C3 equivalent 04N60 04N60C P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
Text: current capability P-TO251 P-TO252 ·=Improved transconductance ·=150 °C operating temperature , SPU04N60C3 P-TO251 - 04N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter , SPU04N60C3 Preliminary data P-TO251 (I-Pak) dimensions symbol [mm] [inch] min A max


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PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C3 equivalent 04N60 04N60C P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
1998 - P-TO252

Abstract: SPD07N20 SPU07N20 AVALANCHE TRANSISTOR G10FS
Text: SPD07N20 Preliminary data SPU07N20 SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD07N20 200 V 7A 0.4 P-TO252 C67078-S.-. - . SPU07N20 200 V 7A 0.4 P-TO251 C67078-S.-. - . Maximum Ratings Parameter Symbol , Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 23


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PDF SPD07N20 SPU07N20 P-TO252 C67078-S. P-TO251 23/Jan/1998 P-TO252 SPD07N20 SPU07N20 AVALANCHE TRANSISTOR G10FS
1998 - SPU10N10

Abstract: P-TO252 SPD10N10
Text: SPD10N10 Preliminary data SPU10N10 SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS(on) Package Ordering Code SPD10N10 100 V 10 A 0.2 P-TO252 C67078-S. . . - . . SPU10N10 100 V 10 A 0.2 P-TO251 C67078-S. . . - . . Maximum Ratings Parameter Symbol , Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 23


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PDF SPD10N10 SPU10N10 P-TO252 C67078-S. P-TO251 23/Jan/1998 SPU10N10 P-TO252 SPD10N10
1999 - 14n03L

Abstract: K3530 14n03 IPU14N03L IPU14N03LA
Text: IPU14N03L Preliminary data OptiMOSâ Power-Transistor Buck converter series Product Summary N-Channel VDS Logic Level RDS(on) Low on-resistance RDS(on) ID 30 V 14.4 m 30 A Feature P-TO251 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature dv/dt rated Ideal for fast switching buck converter , IPU14N03L P-TO251 Q67042-S4115 14N03L Maximum Ratings,at Tj = 25 °C, unless otherwise specified


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PDF IPU14N03L P-TO251 Q67042-S4115 14N03L 14n03L K3530 14n03 IPU14N03L IPU14N03LA
1997 - SPD09N05

Abstract: P-TO252 SPU09N05 spd09n
Text: SPD09N05 SPU09N05 Preliminary data SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · dv/dt rated · 175°C operating temperature Type VDS ID RDS(on) Package Ordering Code SPD09N05 55 V 9.2 A 0.15 P-TO252 Q67000-. . . . - . . SPU09N05 55 V 9.2 A 0.15 P-TO251 Q67000-. . . . - . . Maximum Ratings Parameter , in mm P-TO251 Dimension in mm Semiconductor Group 9 16/Oct/1997 Siemens


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PDF SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n
1998 - SPD13N05L

Abstract: Q67000 SPU13N05L P-TO252
Text: P-TO251 Q67000-. . . . - . . Maximum Ratings Parameter Symbol Continuous drain current , SPU13N05L Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group


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PDF SPD13N05L SPU13N05L P-TO252 Q67000-. P-TO251 13/Nov/1997 SPD13N05L Q67000 SPU13N05L P-TO252
1999 - DD35

Abstract: 02N60C3
Text: Preliminary data SPD02N60C3 SPU02N60C3 Cool MOSTM=Power Transistor Feature ·=New revolutionary high voltage technology · Ultra low gate charge ·=Periodic avalanche rated · Extreme dv/dt rated ·=Ultra low effective capacitances ·=Improved noise immunity ·=150 °C operating temperature P-TO251 C , Type SPD02N60C3 SPU02N60C3 Package P-TO252 P-TO251 Ordering Code Q67040-S4420 - Marking , 2001-11-16 Preliminary data SPD02N60C3 SPU02N60C3 P-TO251 (I-Pak) dimensions symbol min A B C D E


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PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35
1999 - 12N03L

Abstract: IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03
Text: Ideal for fast switching applications P-TO251 Type Package Ordering Code Marking IPD12N03L P-TO252 Q67040-S4342 12N03L IPU12N03L P-TO251 Q67042-S4043 P-TO252 12N03L


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PDF IPD12N03L IPU12N03L P-TO251 P-TO252 Q67040-S4342 12N03L Q67042-S4043 12N03L IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03
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