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LT1076HVIT#06 Linear Technology IC MULTI CONFIG ADJ 2A TO220-5
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1999 - 11N60C3

Abstract:
Text: High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.38 11 V A P-TO220-3-31 P-TO220-3-1 · P-TO-220-3-31: Fully , Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 11N60C3 P-TO220-3-31 Q67040-S4408 Symbol ID 11 7 ID puls , cut. P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C D E F G H K L M N P T


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PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3
1999 - 04N60C3

Abstract:
Text: gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · Extreme dv/dt rated · High peak current capability 1 · Improved transconductance 2 3 P-TO220-3-31 , -3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Symbol , ) dimensions P-TO220-3-31 symbol [mm] [inch] min max min max A 10.37 10.63


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PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 04N60C 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3
1999 - SMD Transistor g20

Abstract:
Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO220-3-31 , Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum Ratings Parameter , 2004-09-07 SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol


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PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 SMD Transistor g20 03N60C3 2535-r
1999 - 15N60C3

Abstract:
Text: gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · Extreme dv/dt rated · Ultra low effective capacitances 1 · Improved transconductance 2 3 P-TO220-3-31 , -3-1 Q67040-S4601 15N60C3 SPA15N60C3 P-TO220-3-31 Q67040-S4603 15N60C3 Maximum Ratings Parameter , ) dimensions P-TO220-3-31 symbol [mm] [inch] min max min max A 10.37 10.63


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PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP15N60C3 15N60C3 P-TO220-3-31 transistor 15N60c3 P-TO-220-3-31 5304 marking code 73 5304 SPA15N60C3 SPI15N60C3 SPP15N60C3 15N60
1999 - 07N60C3

Abstract:
Text: High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-31 P-TO220-3-1 2 1 P-TO220-3-1 23 , Code Q67040-S4400 Q67040-S4394 Q67040-S4424 Marking 07N60C3 07N60C3 07N60C3 07N60C3 P-TO220-3-31 , plated, except area of cut. P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C


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PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3
1999 - 12N50C3

Abstract:
Text: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.38 ID Feature 560 11.6 A · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263 , transconductance 1 2 3 1 23 P-TO220-3-31 P-TO220-3-1 · P-TO-220-3-31: Fully isolated , P-TO262 Q67040-S4578 12N50C3 SPA12N50C3 P-TO220-3-31 Q67040-S4577 12N50C3 Maximum


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PDF SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 SPB12N50C3 TRANSISTOR SMD MARKING CODE 7A Q67040-S4578 SPI12N50C3 SPP12N50C3 P-TO263-3-2
1999 - 17n80c3

Abstract:
Text: Marking 17N80C3 17N80C3 17N80C3 P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 Q67040-S4441 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C


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PDF SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C Q67040-S4441 UJ14
1999 - 02N80C3

Abstract:
Text: SPP02N80C3 SPA02N80C3 Final data Cool MOSTM Power Transistor VDS 2.7 ID · New revolutionary high voltage technology V RDS(on) Feature 800 2 A · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 · Extreme dv/dt rated · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 1 2 3 P-TO220-3-31 Type Package Ordering Code Marking SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 SPA02N80C3 P-TO220-3-31


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PDF SPP02N80C3 SPA02N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4432 02N80C3 02N80C3 Q67040-S4432 02N8 SPA02N80C3 SPP02N80C3
1999 - 03N60C3

Abstract:
Text: Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V A Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · P-TO-220-3-31: Fully isolated , -3-2 Ordering Code Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum


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PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3
1999 - 07N60C3

Abstract:
Text: rated · High peak current capability P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 · Improved transconductance · 150 °C operating temperature 1 2 3 P-TO220-3-31 Type Package , -3-2 Q67040-S4394 07N60C3 SPI07N60C3 P-TO262-3-1 Q67040-S4424 07N60C3 SPA07N60C3 P-TO220-3-31


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PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
1999 - 07n60c3

Abstract:
Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.6 ID Feature 650 7.3 A · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262 , transconductance 1 2 3 P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute , SPA07N60C3 P-TO220-3-31 Q67040-S4409 07N60C3 Maximum Ratings Symbol Parameter Value SPP_B


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PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 smd transistor marking G12 SPA07N60C3 SPI07N60C3 SPP07N60C3
1999 - 08N80C3

Abstract:
Text: SPP08N80C3 SPA08N80C3 Final data Cool MOSTM Power Transistor VDS 0.65 ID · New revolutionary high voltage technology V RDS(on) Feature 800 8 A · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 · Extreme dv/dt rated · Ultra low effective capacitances 1 · Improved transconductance 2 3 P-TO220-3-31 · P-TO , P-TO220-3-1 Q67040_S4436 08N80C3 SPA08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 Maximum


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PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040 S4436 08N80C3 equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80 08n80c Q67040-S4437 transistor SPP08N80C3
1999 - 20N60C3

Abstract:
Text: Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.19 20.7 V A P-TO220-3-31 P-TO220-3-1 Package , 20N60C3 20N60C3 20N60C3 20N60C3 P-TO220-3-31 Q67040-S4410 Symbol ID 20.7 13.1 ID puls EAS EAR IAR , . P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C D E F G H K L M N P


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PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 20n60c3 TO-247 20n60c3 transistor 20N60C3 MARKING SPD06S60
1999 - SPP08N80C3

Abstract:
Text: SPP08N80C3 SPA08N80C3 Final data Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS(on) 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31 1 2 P-TO220-3-1 3 P-TO220-3-31 Type Package Ordering Code Marking SPP08N80C3 P-TO220-3-1 Q67040_S4436 08N80C3 SPA08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3


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PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 SPP08N80C3 08n80c3
1999 - Not Available

Abstract:
Text: SPP06N80C3 SPA06N80C3 Final data Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS(on) 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31 1 2 P-TO220-3-1 3 P-TO220-3-31 Type Package Ordering Code Marking SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 SPA06N80C3 P-TO220-3-31 Q67040-S4435 06N80C3


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PDF SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3
1999 - 08N80C3

Abstract:
Text: Preliminary data SPP08N80C3 SPA08N80C3 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated Product Summary VDS RDS(on) ID P-TO220-3-31 800 0.65 8 V A P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP08N80C3 SPA08N80C3 Package P-TO220-3-1 Ordering Code Q67040_S4436 Marking 08N80C3 08N80C3 P-TO220-3-31 Q67040-S4437 Maximum Ratings Parameter Continuous drain current TC =


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PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 spa08n
1999 - 04n60c3

Abstract:
Text: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 ID 4.5 A Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220 , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Parameter


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PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 Q67040-S4366 SPA04N60C3 SPB04N60C3 SPB04N60C3 SMD SPP04N60C3
1999 - 12n50c3

Abstract:
Text: Preliminary data SPP12N50C3, SPI12N50C3 SPA12N50C3 VDS @ Tjmax RDS(on) ID 560 0.38 11.6 V A Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · P-TO-220-3-31: Fully , -3-1 P-TO262-3-1 Ordering Code Q67040-S4579 Q67040-S4578 Marking 12N50C3 12N50C3 12N50C3 P-TO220-3-31


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PDF SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12n50c3 TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c
1999 - 21n50c3

Abstract:
Text: SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.19 ID Feature 560 21 A · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 220 · Ultra low gate charge P-TO220-3-31 P-TO262 , capacitances 1 2 3 P-TO220-3-31 · Improved transconductance · P-TO-220-3-31: Fully isolated , -3-1 Q67040-S4564 21N50C3 SPA21N50C3 P-TO220-3-31 Q67040-S4585 21N50C3 Maximum Ratings Parameter


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PDF SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 SPI21N50C3 SPA21N50C3 SMD TRANSISTOR MARKING 6c S4565 Q67040-S4566
1999 - 15N60C3

Abstract:
Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.28 ID Feature 650 15 A · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-1 Q67040-S4601 15N60C3 SPA15N60C3 P-TO220-3-31 Q67040-S4603 15N60C3 Maximum Ratings Parameter


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PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP15N60C3 15N60C3 TRANSISTOR 15n60c3 15N60 SPI15N60C3 SPA15N60C3 SPP15N60C3
1999 - 07N60C2

Abstract:
Text: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 RDS(on) ID P-TO263-3-2 V A 0.6 7.3 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP07N60C2 SPB07N60C2 SPA07N60C2 , 07N60C2 P-TO220-3-31 Q67040-S4331 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC


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PDF SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 07N60C2 07n60
2005 - Not Available

Abstract:
Text: VDS Ω • • G • G 2 G • • 1 • 2 3 P-TO220-3-31 • G G G G SP000216310 I TC TC tp Tjmax VDD Tjmax EAR VDD Tjmax VGS Gate source voltage VGS ± Ptot Power dissipation, TC = 25°C Rev. 2.6 ± P 2007-08-30 V DS Tj RthJC RthJA wavesoldering V(BR)DSS V GS V GS µ V DS , SPP08N80C3, SPI08N80C3 SPA08N80C3 PG-TO220- 3-31 (FullPAK) Rev. 2.6 Page 12 2007-08-30


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PDF P-TO220-3-31 SP000216310 SPP08N80C3, SPI08N80C3 SPA08N80C3 PG-TO220-3-1, PG-TO220-3-21
2005 - SPA02N80C3

Abstract:
Text: VDS · · G · 1 G · · G 1 2 3 P-TO220-3-31 G G SP000216295 TC TC tp Tjmax VDD Tjmax EAR VDD Tjmax Gate source voltage VGS VGS Power dissipation, TC = 25°C Rev. 2.6 ± ± Ptot P 2007-08-30 V DS Tj RthJC RthJA wavesoldering V(BR)DSS V GS V GS µ V DS VGS Tj Tj V GS V GS VDS Tj Tj , . 2.6 Page 11 2007-08-30 SPP02N80C3 SPA02N80C3 PG-TO220- 3-31 (FullPAK) Rev. 2.6 Page


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PDF P-TO220-3-31 SP000216295 SPP02N80C3 SPA02N80C3 PG-TO220-3-1, PG-TO220-3-21 PG-TO220-3-31 SPA02N80C3
1999 - 08N80C3

Abstract:
Text: SPP08N80C3, SPI08N80C3 SPA08N80C3 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 0.65 ID · New revolutionary high voltage technology V RDS(on) Feature 800 8 A P-TO262 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , Q67040-S4632 08N80C3 SPA08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 Maximum Ratings Symbol


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PDF SPP08N80C3, SPI08N80C3 SPA08N80C3 P-TO220-3-31 P-TO262 P-TO220-3-1 P-TO-220-3-31: SPP08N80C3 08N80C3 equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
1999 - 04n60c3

Abstract:
Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.95 ID Feature 650 4.5 A · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220 , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Symbol


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PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPA04N60C3 SPB04N60C3 SPP04N60C3 transistor C 331
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