The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1155MJ8/883B Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8, HERMETIC SEALED, CERDIP-8, MOSFET Driver
LT1161IS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

P-Channel MOSFET 800v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRU1239SC

Abstract:
Text: package 3 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 10 45V 110.000A D-61 45V 110A Schottky Common Cathode , Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a , 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package FAX , : 0755-8380 8450 3 800V 3 Phase Bridge in a INT-A-Pak package 100V 110A Schottky Common Cathode Diode in a


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2003 - 15A POWER TRANSISTOR FOR SMPS

Abstract:
Text: output. It is ideally suited for driving a power MOSFET . Features and Benefits · Power savings mode , Complex Module Compact & Complex Module 800V N-Channel Advanced QFETTM C-Series 900V N-Channel Advanced , C-Series 800V N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET C-Series 200V N-Channel , N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET , Transistor Dual P-Channel Logic Level PowerTrench MOSFET ISL9N315AD3ST KSC2690 MJE802 SI4532DY


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PDF FAN7031, FAN7023, FAN7005 FIN7216-01 FAN7556 FAN7601 FSA3357 QVE00033 Power247TM, 15A POWER TRANSISTOR FOR SMPS list of n channel power mosfet FQPF*10n20c detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FAN601
2004 - P-Channel MOSFET 800v

Abstract:
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 10V, ID = 2.5A V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V , VGS = 0V VDS = , 25°C, IS = 4.1A, VGS = 0V TJ = 25°C, IF = 4.1A di/dt = 100A/µs à MOSFET symbol A ­­­ ­­­


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET irf 480 ED marking code diode IRFBE30L IRFBE30S IRL3103L P Channel Power MOSFET IRF
2003 - 600V igbt dc to dc buck converter

Abstract:
Text: MOSFETs FDZ299P - P-Channel MOSFET Features and Benefits Applications FXL34 - Voltage Translator , save PCB board space without sacrificing power dissipation capability Low-voltage P-Channel MOSFET , applications P-Channel MOSFET in 1.5 x 1.5mm BGA package www.fairchildsemi.com/whats_new/lmv3xx_nph.html , performance with size. This PChannel MOSFET 's high-performance PowerTrench technology is housed in an , channel · The SSOT-6 FLMP provides a much lower thermal impedance path from the PCB to the MOSFET


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PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract:
Text: MOSFET FQA7N80 N-Channel 7A/ 800V Power MOSFET FDS6912 Dual N-Channel Logic-Level PWM , Current Sensing Method 20A­30A/40V Schottky Rectifiers 100%­400% Current Amplification 6A/ 800V , Memory Power Controller (VDDQ, VTT and VREF) FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDC6331L Integrated Load Switch FDD6690A N-Channel Logic-Level PowerTrench MOSFET FDD6630A 30V N-Channel PowerTrench MOSFET ML6553 1A Bus


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
IXAN0062

Abstract:
Text: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation's power MOSFET products and their typical application information. Power MOSFETs are widely used , vertical double-diffused MOSFET using the Planar-gate process and the "UMOSFET" or the "Trench MOSFET , Power MOSFET The Planar-gate MOSFET is defined as "DMOSFET" or double diffused power MOSFET in which , bias to create a channel at the surface of the P-base region. Trench-gate Power MOSFET The


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PDF IXAN0062 IXAN0062 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets Silicon MOSFET 1000V mosfet 1000v mosfets P-Channel Depletion Mosfets HiperFET
2007 - P-Channel MOSFET 800v

Abstract:
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from , = 800V , VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , di/dt = 100A/µs Ù MOSFET symbol A ––– ––– ––– ––– 480


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 08-Mar-07 P-Channel MOSFET 800v
2003 - TRIACS EQUIVALENT LIST

Abstract:
Text: 18 FDS3672/FDS3682/FDS3692/ FDS3992/FDS2572/FDS2582 60V trench MOSFET devices provide , functions · Injection systems · Overcurrent protection using MOSFET sensing · Distributed power , topologies 8 9 10 FKPF12N60/FKPF12N80 TinyLogic Ultra Low Power FOD2741A/B/C 600V/ 800V , /fod2741_nph.html www.fairchildsemi.com/tinylogic TinyLogic ULP Noise free low voltage switching 600V/ 800V , FJAF4210 FJAF4310 FKPF12N60 FKPF12N80 P-Channel 1.8V Specified FLMP PowerTrench® MOSFET P-Channel


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PDF FS8S0765RC new/fs8s0765rc FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 Power247TM, TRIACS EQUIVALENT LIST 440v to 12v smps power supply 440v ac voltage regulator REG IC 48V IN 12V 10A OUT 440v to 12v smps power supply 50A dimmer diagrams IGBT 24v 12v 20A regulator FKPF12N60 600V igbt dc to dc buck converter drive motor 10A with transistor P channel MOSFET
2007 - P-Channel MOSFET 800v

Abstract:
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 800V , VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , MOSFET symbol A ­­­ ­­­ ­­­ ­­­ 480 1.8 V ns nC D G S f f Intrinsic


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L
1N4007 MINI MELF

Abstract:
Text: . 3 BACKLIGHT INVERTER, MOSFET Driver , Backlight Inverter segment includes lighting igniters, protection devices, and MOSFET drivers. For lighting , , MOSFET Driver MOSFETs Product Name Status Description Features Package 2N7002K Single n-channel 60-V MOSFET Single N-Ch; 60V; MOSFET rDS(on) at 4.5V=4Ohms; ID(max) = 300mAmp; SI4425BDY P-channel 30-V single MOSFET VDS = 30 V; rDS(on)@4.5 V = 0.019ohms ID(max) = 11.4 A SMD SO


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PDF 250ns DO-220AA V-540V; V-440V; DO-204AL DO-41) DO-204AC 1N4007 MINI MELF
IRF540 n-channel MOSFET

Abstract:
Text: ^ ^ _ ^ ^ CONCLUSION The use of power MOSFET dice for hybrid assemblies can result in significant , OOlOSbfl 0 ■T-3 MOSFET , pd-9.465 TABLE 2: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL HEXFET POWER MOSFET DIE HEX Part , HEXSense POWER MOSFET DIE IOR HEX Part VDS RDS(on) Nominal Figure Recommended Closest Bulletin size , IRC840 PD-9.501 TABLE 4: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL LOGIC LEVEL MOSFET DIE HEX Part


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PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
IRFC9130

Abstract:
Text: « Figure 11. HEX-2. 800V , 900V, & 1000V, N-Channel -—WH ■W Figure 12. HEX-3: 60V, N- and , 18. HEX-3: 800V , 900V, & 1000V, N-Channel All dimensions shown in Inches/mm Die dimensions are from , Figure 2«. HEX-4.5: 500V, N-Channel Figure 2*. HEX-4: 800V , 900V, & 1000V, N-Channel Figure 27. HEX , , N-Channel Figure 32. HEX-5: 800V . 900V, & 1000V. N-Channel -m— —-I Figure 33. HEX-6: 200V, 400V & , -966. "HEXFET III — A new Generation of Power MOSFETs." Conclusion The use of power MOSFET die for hybrid


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PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 irfc9120 IRFC430 IRFC9230
HEXFET III - A new Generation of Power MOSFETs

Abstract:
Text: KELVIN IS = CURRENT SENSE Figure 11. HEX-2: 800V , 900V, & 1000V, N-Channel SK * SOURCE KELVIN IS = , -3: 200V & 250V, N- and P-Channel Figure 17. HEX-3: 400V, 500V, & 600V, N-Channel Figure 18. HEX-3: 800V , -4: 400V, 500V, & 600V, N-Channel Figure 25. HEX-4.5: 500V, N-Channel Figure 26. HEX-4: 800V , 900V, & , 500V, N-Channel Figure 31. HEX-5: 400V, 500V, & 600V, N-Channel Figure 32. HEX-5: 800V , 900V, & , use of power MOSFET die for hybrid assemblies can result in significant reduction in overall package


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PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 1000V P-channel MOSFET irfc9024 AN-966 AN-964D transistor 9527 international rectifier 9509 IR hexfet probe specifications irf Cross References
Not Available

Abstract:
Text: Specifications for N-Channel Rad Hard Power MOSFET Die Recommended Bond Wire Size Gate Source (in/mm) (In , ) GATE 0.68 " (0.027) 3.56 (0.140) 2.49 (0.098) HEX-3: 60V, N-CHANNEL HEX-2: 800V , 900V & , ) * " HEX-3: 600V, N-CHANNEL HEX-3: 800V , 900V & 1000V, N-CHANNEL SEE NOTES FOR TOLERANCES AND


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PDF T-39-Ã IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450 IRHN8450 IRHE7110 IRHE8110 IRHE7130
2014 - Not Available

Abstract:
Text: AUIRF9Z34N TO-220AB AUIRF9Z34N Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified , €“ ––– ––– ––– ––– ––– 54 110 Conditions MOSFET symbol D -68 , )†††AEC-Q101-002 Human Body Model Class H1B (+/- 800V )†††AEC-Q101-001 Charged


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PDF AUIRF9Z34N O-220AB O-220AB O-220
AUIRF9Z34N

Abstract:
Text: PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS , Forward Turn-On Time Ù Min. Typ. Max. Units ––– ––– MOSFET symbol -68 , M3 (+/- 250V)†††AEC-Q101-002 Human Body Model Class H1B (+/- 800V )†††AEC-Q101


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PDF 7627A AUIRF9Z34N AUIRF9Z34N
2008 - npn smd 2n2222 smd

Abstract:
Text: the NCP1014 monolithic switching controller/ Mosfet (U1). Synchronous rectification is used on the , -4R7L or similar (4.7 uH, 4A). 6. Q1 is ON Semi NTD25P03LG P-channel Mosfet . 7. Q3 is ON Semi NTB30N06LT4G N-ch logic level Mosfet (D2Pak) 8. T2 is Coilcraft current sense xfmr T6522-AL (Np/Ns = 1:50) or , 1 1 D1, 2, 3, 4, 5 D6, D7 D8, D9 Q2, 4, 5 Q6 U1 Q1 Q3 U3 U2 U5 1A, 800V diode 100 , controller - 65 kHz P-channel Mosfet , 30V N-channel Mosfet , logic level Dual buck regulator SFH6156A-4 (4


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PDF DN06045/D NCP1014, NCP3120 T6522-AL npn smd 2n2222 smd transformer less power supply 12 volt 3A 2n2222 smd transistor 2N2222 SMD 2n2907 smd 2N2222 SMD equivalent 2N2222 pinout Rubycon 400V 470uF capacitor 1N4007 smd 1210 npn smd 2N2222
2011 - AUIRF9Z34

Abstract:
Text: PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS , MOSFET symbol A ­­­ ­­­ ­­­ ­­­ 54 110 V ns nC G f f Intrinsic turn-on time , -002 Human Body Model Class H1B (+/- 800V ) AEC-Q101-001 Charged Device Model ESD Class C5 (+/-


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PDF 7627A AUIRF9Z34N AUIRF9Z34 AUIRF9Z34N AEC-Q101 to220ab
3 watt 70v zener diode

Abstract:
Text: Features Package Q-Level P+N Channel MOSFET , SMD Id up to 1.2 A, SC70-6 rDSon 0.165 Ω@Vin = , Small-Signal MOSFET Product Name Status 2N7002E-E3 2N7002K-E3 Description N-Channel Small-Signal Switching MOSFET NEW 60V/0.24A. Rdson=1.2ohm, Qg = 0.4 Nc SMD SOT-23 N-Channel Small-Signal Switching MOSFET 60V/0.3A. Rdson=1ohm, Qg = 0.4 nC SMD SOT-23 Small-Signal Schottky Diode , Status NEW Description N-Channel 40V (D-S) MOSFET Features Rdson=0.042ohm, ID=5.6A Package


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PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P
2015 - Not Available

Abstract:
Text: in small 2818 package. MOSFETS RESISTORS N-channel 800-V (D-S) Power MOSFET built on rugged , performance over temperature and voltage. P-channel 12 V (D-S) MOSFET using TrenchFET® Gen III for , blocking filter. MOSFETS NON LINEAR RESISTORS Industry leading p-channel 20 V (D-S) MOSFET with , leading p-channel 12 V (D-S) MOSFET with max RDS(ON) down to 25.5 mΩ in 1.6 mm x 1.6 mm PowerPAK SC , and tolerance on R25 down to 1 %. MOSFETS CERAMIC CAPACITORS Dual n-channel 20-V (D-S) MOSFET


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PDF VMN-MS6975-1502
2010 - U5505

Abstract:
Text: Compliant Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. G S ID , °C Conditions MOSFET symbol A V D showing the integral reverse G p-n junction diode. TJ = , AEC-Q101-001) Charged Device Model RoHS Compliant Class H1B ( 800V ) Class C5 (2000V) (per AEC-Q101


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PDF AUIRFR5505 AUIRFU5505 U5505 AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505
Not Available

Abstract:
Text: Compliant Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS -55V RDS(on) max. G S , , di/dt ≤ -240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Conditions MOSFET symbol V showing , RoHS Compliant Class H1B ( 800V ) Class C5 (2000V) (per AEC-Q101-005) Yes † Qualification


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PDF AUIRFR5505 AUIRFU5505
Not Available

Abstract:
Text: -2: 800V , 900V & 1000V, N-CHANNEL D12 1.02 (0.040) 0.51 (0.020) 1.52 (0.060) SOURCE 3.86 (0.152) J L. 0.58 , ) 5.23 (0.206) 0.50 (0.020) SOURCE HEX-3: 800V , 900V & 1000V, N-CHANNEL 0.57 4.32 (0 022> (0.170) " , _ 0.66 (0.026) 5.64 (0.222) T 1.65 (0.065) 0.51 (0.020) 5.64 (0.222) HEX-4: 800V , 900V & 1000V, N-CHANNEL , ) 0.46 (0.018) 1.04 .041) —j g u- 0.91 (0.036) 6.50 (0.256) 7.32 (0.288) HEX-5: 800V , 900V & 1000V


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PDF IRGCH50ME 250pA, 250pA
2004 - FSD210 8-pin

Abstract:
Text: . Fairchild offers a family of 800V power triacs that can be designed with triac driver optocouplers making , C-Series N-Channel PowerTrench; MOSFET 400V N-Channel Advance QFET C-Series 600V N-Channel Advance QFET C-Series N-Channel PowerTrench; MOSFET N-Channel PowerTrench; MOSFET N-Channel PowerTrench; MOSFET N-Channel PowerTrench; MOSFET 30V N-Channel PowerTrench; MOSFET Complementary PowerTrench; MOSFET P-Channel -1.8 Vgs Specified PowerTrench; MOSFET N-Channel PowerTrench; MOSFET N-Channel PowerTrench


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PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
2013 - JESD22-A108D

Abstract:
Text: P-channel MOSFET in a switching loss optimized Direct Drive JFET Topology. The device consists of two , 17.5V. The output chip is directly driving a CoolSiCTM JFET and MOSFET with rail to rail output stages , Datasheet Package PG-DSO-19-4 2 Rev. 1.0, 2013-01-31 LV MOSFET RgM CoolSiCT M JFET EiceDRIVERTM , . . . . . . . . . . 13 Interlock between MOSFET Gate and JFET Gate . . . . . . . . . . . . . . . . . , clamp of the JFET gate, connect to p-channel MOSFET drain to ensure self turn off of the JFET during


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PDF 1EDI30J12CP JESD22-A108D 1EDI30J12CP JESD22-A103 JESD22-A108-D p-channel jfet rf
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