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Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

P-Channel Depletion mosFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DQ381

Abstract:
Text: Drain 2 12 11 1 6 i 9 20X ICMJB 15 N-ohannel depletion MOSFET 4 Capacitors 2 Diodes I Resistor I I P-channel depletion MOSFET DG390A Pad No. ' 88 m llt1 3 4 5 8 8 9 10 11 13 14 15 16 , Diodes 2 Resistors 22 P-channel depletion MOSFET 5-206 SILICONIX INC 03 dË J ÛES473S , depletion MOSFET 22 N-ohanne! depletion MOSFET 4 Diodes 5 DG384A - 88 m ils- Pad No. 1 3 4 5 6 8 9 10 , 22 P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-205 SILICONIX I N C


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PDF 152Sc DG381A/384A/387A/390A DG180 DG38XA AE5473S DG381A/384A/387A/390A T-51-11 DQ381 P-Channel Depletion Mosfet Depletion MOSFET depletion p mosfet vd 5205 DG381AAK LT 5208
P-Channel Depletion Mode FET

Abstract:
Text: N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , interchangeable. initial rise in ID is related to the buildup of the depletion layer as VDS increases. The , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
1999 - P-Channel Depletion Mosfets

Abstract:
Text: ) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS(th) Ohmic Region Characteristics , ) 6c) Family of Output Characteristics for N-Channel Depletion MOSFET 6d) Family of Output , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1996 - p channel depletion mosfet

Abstract:
Text: Cross-Section Through an N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion , N-Channel Depletion MOSFET 6d) Family of Output Characteristics for N-Channel Enhancement MOSFET Figure , both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
1995 - P-Channel Depletion Mode FET

Abstract:
Text: Through an NChannel DepletionType MOSFET 6b) Circuit Arrangement for NChannel Depletion MOSFET VDS = , Depletion MOSFET 6d) Family of Output Characteristics for NChannel Enhancement MOSFET Figure 6. 4 , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , buildup of the depletion layer as VDS increases. The curve approaches the level of the limiting current


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
P-Channel Depletion Mode FET

Abstract:
Text: N-channel depletion MOSFET 12 16 VOLTS (C) Family of output characteristics for the Sil iconix 2N3631 N-channel depletion MOSFET Figure 7 in a manner similar to the N-Channel junction FET when a voltage of the , enhancement or depletion modes, and exist as both N- and P-Channel devices. The two main FET groups depend on , gradient established will form a depletion layer, where almost all the electrons present in the N-type , to the source). Figure 3B shows the almost complete depletion of the channel under these conditions


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2004 - IXTD24P20

Abstract:
Text: N-Channel Depletion Mode MOSFET Type VDSS max. V IXTD 02N50D-1M IXTD 01N100D-1M 500 1000 RDSon max , depletion mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other depletion mode MOSFET , IXTP02N05D, is rated at VDSS = 500 Volts, ID = 200 mA, while its RDS , Depletion Mode MOSFETs Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, requires a , otherwise have similar MOSFET characteristics. Their Rds(on) and breakdown voltage have a positive


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PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets ixtd diode 718
op amp cookbook

Abstract:
Text: & PNP Depletion Mode JFETs: N-Channel & P-Channel Enhancement Mode MOSFETs: N-Channel & P-Channel , reverse voltage > BV(BR)ebo N-Channel Depletion Mode JFET d + Id g Vds Vgs + s Ohmic Region = Triode Region Saturation Region = Pinch-off Region N_jfet.tsc N-Channel Depletion Mode JFET: Vgs = 0V N-Channel Depletion Mode JFET Voltage Controlled Device N-Channel Depletion , A Is 3.214024mA N-Channel Depletion Mode JFET: Vgs = -2.04V N-Channel Depletion Mode JFET


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PDF my/fkee/BEE2213 20AND 20BEP 20notes/ 20FET HCNR200/HCNR201 op amp cookbook N-Channel JFET Vgsoff N-Channel jfet 100V depletion n-Channel Depletion Mosfets Texas Instruments LED Cookbook analog optocoupler hcnr201 GI op amp class D amp swa 500 IRFU9120 equivalent 2N3329
1993 - 2N3797

Abstract:
Text: MOSFET Structure. This Type of Device may be Designed to Operate in Both the Enhancement and Depletion , . 1993 GATE 1 P (a) (­) P SOURCE N DRAIN N SOURCE GATE 1 DEPLETION ZONES , between the source and the drain and are thus called gate regions. As with any p-n junction, a depletion , voltage is increased, the depletion regions spread into the channel until they meet, creating an almost , , the depletion regions again spread into the channel because of the voltage drop in the channel which


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PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N4221 motorola MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
1993 - AN211A

Abstract:
Text: MOSFET Structure. This Type of Device may be Designed to Operate in Both the Enhancement and Depletion , SOURCE GATE 1 DEPLETION ZONES (­) P GATE 2 (b) DRAIN P (­) GATE 1 GATE 2 , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into


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PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 mpf102 fet 2N3797 equivalent mpf102 equivalent P channel 2N4221 motorola
P-Channel Depletion Mosfets

Abstract:
Text: FIELD-EFFECT TRANSISTORS (continued) MOSFETs MOSFETs are available in either depletion /enhancement or enhancement mode (in general, depletion /enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel, and both , ) P-Channel MOSFETs MOSFETs Single Gate P-CHANNEL Enhancement N-CHANNEL Depletion N-CHANNEL Enhancement , €”0.5 -8.0 5.0 25 t = typical *N-Channel MOSFET MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-59


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PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 MFE825 2N3796 MFE3002 P-Channel Depletion Mosfet MFE3003 depletion mode mosfet 100 MHz motorola U310
FET pair n-channel p-channel

Abstract:
Text: MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article will look at depletion mode MOSFET device structure, operation and , “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has


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TLV2426

Abstract:
Text: triode region the MOSFET can be used as a voltage-controlled resistor similar to the Depletion Mode JFET , Review Bipolar Transistors: NPN & PNP Depletion Mode JFETs: N-Channel & P-Channel Enhancement Mode , collector-emitter voltage as current flows from emitter through collector. 5 N-Channel Depletion Mode JFET , Pinch-off Region N_jfet.tsc N-Channel Depletion Mode JFETs are fully turned on with Vgs = 0V and it , resistor. 6 N-Channel Depletion Mode JFET: Vgs = 0V N-Channel Depletion Mode JFET Voltage


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PDF my/fkee/BEE2213 20AND 20BEP 20notes/ 20FET HCNR200/HCNR201 TLV2426 op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor IRFU9120 Stone Soup TIP33 2N6804 Resistor - Wikipedia
1993 - MPF102 JFET

Abstract:
Text: refers Figure 7. Depletion Mode MOSFET Structure. This Type of Device May Be Designed to Operate in , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into , increased, the depletion regions grow until they meet, whereby any further increase in voltage is


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PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 2N4221 MOTOROLA POWER TRANSISTOR MPF102 Transistor 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
2000 - MPF102 equivalent transistor

Abstract:
Text: volts (Figure 7). In this manner, the MOSFET can be made to exhibit depletion characteristics. For , -+ ±±±±±±±±±±±±± + + + N N+ N+ P (SUBSTRATE) Figure 7. Depletion Mode MOSFET , the "Metal-Oxide Semiconductor" Field-Effect Transistor ( MOSFET ), or Insulated-Gate Field-Effect , to the channel. As the drain-source voltage increases, the depletion regions again spread into the , , the depletion regions grow until they meet, whereby any further increase in voltage is counterbalanced


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PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A mpf102 fet 2N3797 2N3797 equivalent 2N4351 MPF102 Transistor P-Channel Depletion Mode FET mpf102 application note
2009 - depletion 400V power mosfet

Abstract:
Text: Memory IC IN4625 (5.1V) 500V depletion mode MOSFET 1.0µamp maximum quiescent current 1.0mamp , MOSFET -2.0V maximum threshold voltage Guaranteed 15 maximum on-resistance at VGS = -2.5V Negligible , Microphone Pulse Dialer IC Mute 400V N-channel MOSFET 1.8V maximum threshold voltage Maximum


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PDF AN-D27 depletion 400V power mosfet P-Channel mosfet 400v depletion mode mosfet MOSFET 400V N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET n channel depletion MOSFET depletion mode power mosfet IN4625
2000 - bq24700 product preview

Abstract:
Text: 2000 MOSFET gate drive PARAMETER AC driver RDS(on) high AC driver RDS(on) low Battery driver , fault time delay ACSEL low to alarm reset low in ac fault time delay Battery depletion ALARM trip , select output. This pin drives an external P-channel MOSFET used to switch to the ac wall-adapter as the , battery to BATDEP pin is used to set the battery voltage level at which depletion is indicated by the ALARM pin. See ALARM pin for more details. A battery depletion is detected when BATDEP is less than 1.2


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PDF bq24700 bq24701 SLUS452 300-kHz 24-Pin bq24700 product preview SLUS452
2000 - SLUS452A

Abstract:
Text: specified) VCC 30.0 Vdc, all voltages relative to Vss) (unless MOSFET gate drive PARAMETER TEST , VNOBAT Battery depletion ALARM trip voltage See Note 8 1.165 1.220 1.275 No battery , source select output. This pin drives an external P-channel MOSFET used to switch to the ac wall-adapter , the battery voltage level at which depletion is indicated by the ALARM pin. See ALARM pin for more details. A battery depletion is detected when BATDEP is less than 1.2 V. A no battery condition is


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PDF bq24700 bq24701 SLUS452A 300-kHz 24-Pin SLUS452A TDA 1251 mosfet drive MBRD640CT IRFR5305 gtr driver bq24701PW bq24700PW
T0-126ML

Abstract:
Text: , the depletion region expansion required by high withstand voltage operation is unstable. To make the depletion layer expand steadily, diffusion layers (guard rings) of the same conduction type as that of the base layer were made within the collector. This allows the depletion layer from the base-collector junction to expand with the depletion layers of the guard rings one after the other, resulting in a stable depletion layer cross the collector. In addition, a multi-layer protection film is added to prevent the


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PDF T0-220FI T0-220. diffus-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-126ML 2SC4637LS 2SC4636LS 2SC4635LS 2SC4634LS 2SC4633LS 2SC4632LS 2SC4631LS 2SC4630LS 2sa1967
1995 - N-Channel Depletion-Mode MOSFET

Abstract:
Text: the depletion mode MOSFET is a normallyon" device; that is, when VGS = 0, ID = IDSS . When a , transfer characteristic of the nchannel, depletion mode MOSFET (Figure 1b). Because the gate is isolated , Bonkowski Introduction MOSFET may also perform in the enhancementmode. The nchannel enhancementmode MOSFET (Figure 1c), requires a positivepolarity gate voltage referenced to the source to provide current conduction. A principal advantage of the depletionmode MOSFET is its ability to perform at


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PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter mosfet modern applications Depletion-Mode MOSFET depletion mode mosfet n channel depletion MOSFET AN901 mosfet vs SCR
1999 - Application Notes

Abstract:
Text: applying a voltage to the gate. The JFET is a depletion mode device whereas the MOSFET can operate as a depletion mode or an enhancement mode device. Depletion mode devices are controlled by depleting the , MOSFET . The MOSFET is a metaloxide semiconductor technology and is sometimes referred to as the IGFET or , current flow through a controlled channel in the semiconductor material. The MOSFET creates a channel , . Application of a reverse bias voltage on the drain/gate terminals results in the formation of depletion


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BJT with V-I characteristics

Abstract:
Text: operated either in enhancement mode or in depletion mode. p-type depletion MOSFET operate similarly to p-type enhancement MOSFET expect that Vt > 0 for depletion type and Vt < 0 for the enhancement type , B S S D iD iD G G n-type Depletion MOSFET ECE60L Lecture Notes, Spring 2002 D iD S S p-type Depletion MOSFET 69 NMOS Inverter and Switch The basic NMOS , widely used FETs are Metal-Oxide-Semiconductor FETs (or MOSFET ). MOSFET can be manufactured as


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PDF ECE60L BJT with V-I characteristics P-Channel Depletion Mosfets IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfet datasheet
P-Channel Depletion Mode FET

Abstract:
Text: integrated circuit. The dielectric U SH 5156 N-channel depletion mode DMOS FET NPN bipolar transitor , depletion mode device's pinch-off voltage, turning that transistor o ff as well. The parameters of this , mode P-channel transistor cas caded w ith a high voltage depletion mode P-channel transis tor. The , DEPLETION MODE DMOS FET (USH5156) ELECTRICAL CHARACTERISTICS {TA = PARAMETER Breakdown Voltage Leakage , MOSFET w ith a 2 ohm onresistance could be used w ith the thyristor to sw itch 170 mA. 0 0 .4 1 .1 1 .2


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PDF USH5155; USH5156 USH5155 USH5156 P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V breadboard 400 dc voltage regulator using thyristor HV Diode P-Channel mosfet 400v 0.5A
hep 251

Abstract:
Text: Complimentary High-Speed, High Voltage MOSFET , . Level Translators and MOSFET Driver IC s , . Depletion Mode MOSFETs - N-Channel. 258 258 258 259 259 257 13. Enhancement Mode MOSFET Arrays (includes Low Threshold MOSFETs


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PDF HV100/HV101 HV300/HV310 HV301/HV311 HV302/HV312 hep 251 32 channel Relay controller IC 128-CHANNEL ANH44 DUAL MOSFET DRIVER 14 PIN LIST hep 230 hv9906
2000 - all mosfet equivalent book

Abstract:
Text: Depletion n P P V DS V DS (a) (b) Figure 2: The Structure of a Depletion Type MOSFET and , July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs , . 3 2) MOSFET . 4 3. The structure of MOSFET , . 5 4. The characteristics of MOSFET


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PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
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