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LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

P-Channel Depletion Mosfets Datasheets Context Search

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P-Channel Depletion Mosfets

Abstract:
Text: /384A/387A/390A DIE TOPOGRAPHY ICMJC 4 Capacitors 2 Resistors 4 Diodes *C = DG381A 18 p-channel Depletion MOSFETs 22 n-channel Depletion MOSFETs ICMJB 4 Capacitors 1 Resistor 2 Diodes * B = DG387A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs Pad No. 1 3 4 5 6 6 10 11 , 16 11 13 14 *A = DG384A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs ICMJC Capacitors 2 Resistors 4 Diodes 8 *C = DG390A 22 p-channel Depletion MOSFETs 30 n-channel Depletion


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PDF DG381A/384A/387A/390A DG180 DG38XA PLUS-40 P-Channel Depletion Mosfets DG381AAK DG390ad P-Channel Depletion
P-Channel Depletion Mosfets

Abstract:
Text: Capacitors 2 Resistors 4 Diodes *C = DG381A 18 p-channel Depletion MOSFETs 22 n-channel Depletion MOSFETs ICMJB 4 Capacitors 1 Resistor 2 Diodes *B = DG387A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs Pad No. 1 Function DG384A Pad No. 1 3 4 5 87 m il* 8 9 10 11 6 , Resistors 4 Diodes ICMJC 8 Capacitors 2 Resistors 4 Diodes *A DG384A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs *C = DG390A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs


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PDF flSSM73S DG381A/384A/387A/390A DG180 DG38XA P-Channel Depletion Mosfets B4477 Depletion DG381AAK
P-Channel Depletion Mosfets

Abstract:
Text: Capacitors 2 Resistors 4 Diodes D = DG304A 16 p-channel Depletion MOSFETs 20 n-channel Depletion MOSFETs ICMJD 6 Capacitors 2 Resistors 4 Diodes D = DG306A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs ICMJE 4 Capacitors 1 Resistor 2 Diodes ICMJF 8 Capacitors 2 Resistors 4 Diodes *E = DG305A 10 p-channel Depletion MOSFETs 14 n-channel Depletion MOSFETs *F = DG307A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs DS XXIC 10632 9003 - 5-85 DG304A/305A/306A/307A


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PDF DG304A/305A/306A/307A DG304A DG307A PLUS-40 DG304A/305A/306A/307A P-Channel Depletion Mosfets DG307ABK P-Channel Depletion 1N diode 306A DG306ACJ
P-Channel Depletion Mosfets

Abstract:
Text: 2 Resistors 4 Diodes *A = DG300A 18 p-channel Depletion MOSFETs 22 n-channel D e le tio n MOSFETs ICMJA 8 Capacitors 2 Resistors 4 Diodes * A = DG302A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs Pad No. 2 3 4 5 6 7 8 9 10 11 12 13 14 Function DG301A Di s, NC NC IN GND VNC , Capacitors 2 Resistors 4 Diodes * B = DG301A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs *C = DG303A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs DS XXIC 10531 9003 -


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PDF DG300A/301A/302A/303A DG300A-DG303A DG300A/301 /302A/303A P-Channel Depletion Mosfets dg303aak DG303ACJ dg300a DG302ACJ DG300ACJ
P-Channel Depletion Mosfets

Abstract:
Text: TOPOGRAPHY Pad No. 1 3 4 5 6 8 9 10 11 12 13 14 15 16 ICMKB 6 Resistors 7 Capacitors 9 Diodes 31 p-channel Depletion MOSFETs 33 n-channel Depletion MOSFETs Function Di d3 S3 S, D* D2 S2 !N2 V+ (Substrate) Vl


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PDF DG5043 DG5043 P-Channel Depletion Mosfets 10535
DG308

Abstract:
Text: Diodes *A = DG308A, *B - DG309 36 p-channel Depletion MOSFETs 40 n-channel Depletion MOSFETs 8 9 10 s3


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PDF DG308A/309 DG308A DG309 DG308 JR 309
DG186ba

Abstract:
Text: JFET 1, Source F G H 5 CMJC 4 Capacitors 4 Resistors 6 p-channel Depletion MOSFETS 4 n-channei Depletion MOSFETS 5 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL


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PDF DG186/187/188 DG186-188 DG180 DG186, DG187, DG186ba
HP3571A

Abstract:
Text: apacitors 2 R esistors 22 P-channel depletion MOSFETs 11 12 30 N -channel depletion MOSFETs 4 Diodes


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PDF DGP303A DG303A DGP303A DGP303A. HP3571A P-Channel Depletion Mosfets HP3330B DG403D DGP303 DGP303ADJ
CMJB

Abstract:
Text: + VL Vr V- (Substrate) IN, T CMJB 6 Capacitors 7 Resistors 8 p-channel Depletion MOSFETs 2 n-channel Depletion MOSFETs 8 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL


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PDF DG180/181 DG180-182 DG180 DG180, DG181. CMJB P-Channel Depletion Mosfets
CMJB

Abstract:
Text: ) 44 m ilt CMJB 8 Capacitors 7 Resistors 12 p-channel Depletion MOSFETs 4 n-channel Depletion MOSFETs 10 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL CHARACTERISTICS liN


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PDF DG189/190/191 DG189-191 DG180 DG189, DG190, CMJB CMJ-B P-Channel Depletion Mosfets
jfet k 184

Abstract:
Text: Resistors 12 p-channel Depletion MOSFETS 4 n-ohannel Depletion MOSFETs 10 PNP bipolar Transistors 4 NPN


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PDF DG183/184/185 DG183-185 jfet k 184 P-Channel Depletion Mosfets
P-Channel Depletion Mosfets

Abstract:
Text: Resistors 12 p-channel Depletion MOSFETs 4 n-channel Depletion MOSFETs II« Pad Function No. 10 in2 11 V


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PDF 89/190/19T E54735 DG189-191 DG180 P-Channel Depletion Mosfets 0g190 DG189BP CMJB DG189AR JFET dg190 P-Channel Depletion
P-Channel Depletion Mode FET

Abstract:
Text: - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs , metal-oxidesemiconductor , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , interchangeable. initial rise in ID is related to the buildup of the depletion layer as VDS increases. The , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
1999 - P-Channel Depletion Mosfets

Abstract:
Text: - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , and 4, MOSFETs can assume several forms and operate in either the depletion /enhancement-mode or , main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs , metal-oxide- semiconductor , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1996 - p channel depletion mosfet

Abstract:
Text: MOSFETs and JFETS. JFETs, by nature, operate only in the depletion mode. That is, a reverse gate bias , (or MOSFETs , metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n- and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mosfets

Abstract:
Text: FIELD-EFFECT TRANSISTORS (continued) MOSFETs MOSFETs are available in either depletion /enhancement or enhancement mode (in general, depletion /enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel, and both single gate and dual gate construction. Some MOSFETs are also offered with input diode protection which , ) P-Channel MOSFETs MOSFETs Single Gate P-CHANNEL Enhancement N-CHANNEL Depletion N-CHANNEL Enhancement


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PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 MFE825 2N3796 MFE3002 P-Channel Depletion Mosfet MFE3003 depletion mode mosfet 100 MHz motorola U310
1995 - P-Channel Depletion Mode FET

Abstract:
Text: MOSFETs , metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode devices, and are available in both n and pchannel configurations. MOSFETs are available in both enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , buildup of the depletion layer as VDS increases. The curve approaches the level of the limiting current


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
2004 - IXTD24P20

Abstract:
Text: Depletion Mode MOSFETs Depletion mode MOSFETs , unlike the regular enhancement type MOSFETs , requires a , N-Channel Depletion Mode MOSFET Type VDSS max. V IXTD 02N50D-1M IXTD 01N100D-1M 500 1000 RDSon max. 30 110 1M 1M Chip type Chip size dimensions mm 1.96 x 1.68 1.96 x 1.68 mils 77 x 66 77 x 66 3 mil x 1 , depletion mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other depletion mode MOSFET, IXTP02N05D, is rated at VDSS = 500 Volts, ID = 200 mA, while its RDS


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PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets ixtd diode 718
FET pair n-channel p-channel

Abstract:
Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the , by other means. This article will look at depletion mode MOSFET device structure, operation and , “enhancement-mode” types. Although MOSFETs can be made in either polarity, N-channel MOSFETs are available in all , sometimes create Pchannel depletion devices during the manufacture of certain analog and digital ICs. In , enhancement-mode transistors, which are “normally-off” devices, depletionmode MOSFETs are “normally-onâ


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PDF
P-Channel Depletion Mode FET

Abstract:
Text: MOSFETs , metal-oxide-silicon field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both P- and N-Channel configurations. MOSFETs are available in both enhancement or depletion modes, and exist as both N- and P-Channel devices. The two main FET groups depend on , gradient established will form a depletion layer, where almost all the electrons present in the N-type , to the source). Figure 3B shows the almost complete depletion of the channel under these conditions


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PDF
1993 - 2N3797

Abstract:
Text: INTERNALLY CONNECTED ADJUST FOR DESIRED ID DEPLETION /ENHANCEMENT MODE MOSFETs ID VDS SOURCE , . 1993 GATE 1 P (a) (­) P SOURCE N DRAIN N SOURCE GATE 1 DEPLETION ZONES , between the source and the drain and are thus called gate regions. As with any p-n junction, a depletion , voltage is increased, the depletion regions spread into the channel until they meet, creating an almost , , the depletion regions again spread into the channel because of the voltage drop in the channel which


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PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N4221 motorola MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
1993 - AN211A

Abstract:
Text: INTERNALLY CONNECTED ADJUST FOR DESIRED ID DEPLETION /ENHANCEMENT MODE MOSFETs ID VDS SOURCE , SOURCE GATE 1 DEPLETION ZONES (­) P GATE 2 (b) DRAIN P (­) GATE 1 GATE 2 , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into


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PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 mpf102 fet 2N3797 equivalent mpf102 equivalent P channel 2N4221 motorola
2012 - TLF35584

Abstract:
Text: portfolio includes: Polarity: N-Channel enhancement, N-Channel depletion and P-Channel MOSFETs Voltage , www.infineon.com/complementary www.infineon.com/pchannel www.infineon.com/ depletion N-Channel MOSFETs Voltage , www.infineon.com/pchannel www.infineon.com/ depletion P-Channel MOSFETs (cont'd) Voltage Product Type RDS(on , /n-ch BSL308C/p-ch BSD356C/n-ch2) BSD356C/p-ch2) Depletion MOSFETs Voltage Product Type RDS(on) (max , Applications Automotive MOSFETs Small Signal MOSFETs Power MOSFETs TEMPFET TM: Temperature Protected Switches


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1993 - MPF102 JFET

Abstract:
Text: ENHANCEMENT MODE 0.1 ID(on) 0 GATE* DEPLETION /ENHANCEMENT MODE MOSFETs DEPLETION MODE VGS , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into , increased, the depletion regions grow until they meet, whereby any further increase in voltage is


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PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 2N4221 MOTOROLA POWER TRANSISTOR MPF102 Transistor 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
2000 - MPF102 equivalent transistor

Abstract:
Text: DEPLETION MODE DEPLETION /ENHANCEMENT MODE MOSFETs ENHANCEMENT MODE ID(on) IDSS CHARACTERISTIC ID(on) @ , to the channel. As the drain-source voltage increases, the depletion regions again spread into the , , the depletion regions grow until they meet, whereby any further increase in voltage is counterbalanced by an increase in the depletion region toward the drain. There is an effective increase in channel , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the


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PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A mpf102 fet 2N3797 2N3797 equivalent 2N4351 MPF102 Transistor P-Channel Depletion Mode FET mpf102 application note
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