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LT1025ACJ8 Linear Technology T.C. COLD JUNCTION COMPENSATOR
LT1025CN8#PBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CS8#PBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CS8#TRPBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CS8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1025ACN8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C

P channel Junction FET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - P-Channel Depletion Mosfets

Abstract:
Text: complete depletion of the channel under these conditions. Depletion Layer P G 3b) N-Channel FET , form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , junction formed along the channel . Implicit in this description is the fundamental difference between JFET , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1995 - P-Channel Depletion Mode FET

Abstract:
Text: Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with ntype channel embedded in ptype substrate. Figure 2. Idealized Structure of An NChannel Junction FET G 3a) NChannel FET Working in the Ohmic Region (VGS = 0 V) (Depletion Shown Only in Channel , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , . FET Family Tree (07/11/94) 1 AN101 Siliconix In addition to the channel material, a JFET


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
1996 - p channel depletion mosfet

Abstract:
Text: which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel . Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1­94 1 AN101 In addition to the channel material, a


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mode FET

Abstract:
Text: which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion Layer N-Channel P P-Gate Final form taken by FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An N-Channel Junction FET G 3a) N-Channel FET Working , junction formed along the channel . Implicit in this description is the fundamental difference between JFET , conditions. N Depletion Layer P G 3b) N-Channel FET Working in the Current Saturation Region


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
1993 - AN211A

Abstract:
Text: P-CHANNEL MOSFET ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE N P (SUBSTRATE) (a) OXIDE , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) P P SOURCE N DRAIN N , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET , drain current may be enhanced by forward gate voltage only until the


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PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 mpf102 fet 2N3797 equivalent mpf102 equivalent P channel 2N4221 motorola
1993 - 2N3797

Abstract:
Text: TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with , oxide layer serves as a protective coating for the FET surface and to insulate the channel from the , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET , drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates only in the enhancement


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PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N4221 motorola MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
1993 - MPF102 JFET

Abstract:
Text: current in the 2 GATE P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE DRAIN N N P (SUBSTRATE) P (SUBSTRATE) (a , - N+ INDUCED CHANNEL N+ Freescale Semiconductor, Inc. P (SUBSTRATE) Figure 5 , large gate voltages. Notice that for the junction FET , drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates


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PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 2N4221 MOTOROLA POWER TRANSISTOR MPF102 Transistor 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
2000 - MPF102 equivalent transistor

Abstract:
Text: into the channel until they meet, È È È È È È N (a) (-) P P N DRAIN SOURCE ÈÇÇÈ ÇÇÇ ÇÇÇ È , ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË P P (SUBSTRATE) ID N P L CHANNEL LENGTH MOS , for the FET surface and to insulate the channel from the gate. However, the oxide is subject to , connected back to back. Figure 3. Junction FET with Single-Ended Geometry http://onsemi.com 2 , reversing the material types. SOURCE GATE (+) ALUMINUM + + + -INDUCED CHANNEL P


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PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A mpf102 fet 2N3797 2N3797 equivalent 2N4351 MPF102 Transistor P-Channel Depletion Mode FET mpf102 application note
P-Channel Depletion Mode FET

Abstract:
Text: channel region). i—111— S 0 p I- (BÍ N-channel FET working in saturation retion (Vqs = , necessary to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , incorporated 6-10 Junction FET Capacitances Associated with the junction between the gate and the channel of a , a reverse-biased PN junction formed along the channel . Implicit in this description is the fundamental difference between FET and bipolar devices: when the FET junction is reverse-biased the gate


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PDF
fet third quadrant operation

Abstract:
Text: voltage divider attenuator.*^) (al N-channel FET Circuit Arrangement for Both an N and P Channel FET , across the junction (VGg, VGp) controls the channel conductance. Under the condition that the FET is , (on)> occurs at VGS = 0 and is dictated by the geometry of the FET . A device with a channel of small , between two of the terminals is controlled by a voltage potential applied to the third. A junction , conductance in the channel between the source and the drain is modulated by a transverse electric field. The


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PDF AU-13, fet third quadrant operation fet vcr compatible siliconix FET AUDIO AMPLIFIER jfet transistor for VCR 647 "photomultiplier" n-channel jfet amplitude control N-Channel JFET FETs sherwin VCR7N Junction FETs JFETs
Not Available

Abstract:
Text: INTEGRATED CIRCUIT TPD7000F 4- CHANNEL LOW -SIDE POW ER M O S FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4- channel driver with a built-in circuit is used to monitor the voltage between the MOS FET drain and source for each channel and to output the state of the power MOS FET . FEATURES • Low-side N-channel power MOS FET driver (input capacitance: 15nF Max). • Incorporates a power MOS FET overcurrent protection function. • Incorporates induction load energy


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PDF TPD7000F TPD7000F 24-pin SSOP24-P-300-1
TPD7000F

Abstract:
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TPD7000F 4- CHANNEL LOW-SIDE POWER MOS FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-charmel driver with a built-in circuit is used to monitor the voltage between the MOS FET drain and source for each channel and to output the state of the power MOS FET . FEATURES · Low-side N-channel power MOS FET driver (input capacitance: 15nF Max). · Incorporates a power MOS FET overcurrent protection function. · Incorporates induction load


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PDF TPD7000F TPD7000F 24-pin IN7000F SSOP24-P-300-1
MOSFET LOSSES SYNC BUCK

Abstract:
Text: maximize the channel density was not sufficient to reduce the sync FET power losses. The reason for this , trench MOSFET technology, the power losses associated with the FET 's in a Synchronous Buck (sync buck , ], Pon = I2rms x Rdson (1) Psw Vin x (Qgd + Qgs2) x fs x Iout/Ig (2) Pgd Qg x V g x fs P (Qoss) 1/2 x (V in x Qoss x fs) P (Qrr) = Vin x Qrr x fs (3) (4) (5) Note that Equation 2 does not apply to the sync FET as it undergoes zero voltage switching and Equation 5 does not apply to


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PDF 132m-nC) IRF7811W/IRF7822 IRF7811/IRF7809 MOSFET LOSSES SYNC BUCK FET DATA BOOK fet nc IC MOSFET QG IRF7811 IRF7811W IRF7822 Reduced conduction losses rectifier
1998 - E1326A

Abstract:
Text: PDFINFO H5 7 6 7 - 0 1 16- Channel T/C FET Multiplexer HP E1353A Technical Specifications , scan list Built-in thermistor reference junction Temperature, voltage, current, and Ohm readings 16 channel 3-wire, or 8- channel 4-wire multiplexer Description The HP E1353A FET multiplexer is a B-size , 16- Channel T/C FET Multiplexer Service Manual 3 Yr. Retn. to HP to 1 Yr. OnSite Warr. Terminal , temperature measurements. The FET multiplexer module consists of a B-size component card (labeled E1351


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PDF 16-Channel E1353A E1353A E1326B E1411B E1351-66201) 16-Chan E1326A E1351-66201 E1403
Diode DII

Abstract:
Text: FET channel current overrides the PN junction leakage current. Junction Temperature Tj (°C , should be noted. (5) Channel dissipation Pch or P D Allowable channel dissipation is the drain loss , transistor's Tj, the allowable channel temperature is the upper limit junction temperature value, which , I in relation to ID. P channel MOS FETs also have similar characteristics. P channel and N channel , Channel dissipation Pch Also, these items express rating values which cannot be exceeded no matter what


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2009 - BD9240

Abstract:
Text: 12 13 14 VREF DUTY1 DUTY2 STB FUNCTION PIN No. Power Ground for FET drivers NMOS FET driver ( Channel 2 side) NMOS FET driver ( Channel 2 side) Input of Under Voltage Lock Out CT , Protection NMOS FET driver ( Channel 1 side) NMOS FET driver ( Channel 1 side) 4/4 NOTE FOR USE This , between the various pins. A P-N junction is formed from this P layer of each pin. For example, the , Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation *1


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PDF R0039A BD9240 bd9240f dc-ac inverter Controller PWM SSOP-B28
2n4391, Voltage controlled

Abstract:
Text: most important considerations in selectin g a FET for use as a switch: 1. (R e ) 2N4391 thru 2N4393 G eneral Purpose 2N 4856 thru 2N4861 FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS TYPES. 2N3824 2N 4417-2N4416 U 310 2N 5396-2N5397 " P " CHANNEL 2N 2606 thru 2N2609 2N5114 thru 2N5116 , voltage is applied at the Drain of the FET . (Vos = O junction FET ) (V «(TH ) M OS FET ). This param eter is , the G ate in relation to the Source to turn the FET off. ( junction FET ). This is similar to the Pull


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PDF SDF1001 2N4391 2N4393 2N4861 2N5S92 2N4119 2N5906 2NS432 2N5433 2NS397-2N 2n4391, Voltage controlled sw 2n4093
1999 - high power FET transistor s-parameters

Abstract:
Text: diode junction . III. How Does the FET Work? Gain in an FET is proportional to the channel conductivity (the " channel " being that area within the epi material under the gate). In a depletion mode FET , with a diode gate structure (similar to a junction FET , but a surface device) made from gallium , inversely proportional to its gate length. Gate width The size of the GaAs FET channel that carries , ­ The measured or estimated temperature of the GaAs FET channel under operating conditions. Tstg


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PDF ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters ATP-1054 bipolar transistor ghz s-parameter high frequency transistor ga as fet DC bias of gaas FET NF50 RF Transistor s-parameter vacuum tube amplifier
1997 - ATP-1054

Abstract:
Text: MESFET for Metal Semiconductor) is simply an FET with a diode gate structure (similar to a junction FET , looks like a forward-biased diode junction . III. How Does the FET Work? Gain in an FET is , capacitor or reversebiased diode junction ) of the semiconductor. As a unipolar device, the current in an FET , channel and there is little or no current carried by the minority carriers (in an N-channel FET , holes). , width The size of the GaAs FET channel that carries current. That is, width is the longer of the two


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PDF ATP-1054, 5963-2025E 5966-0779E ATP-1054 high frequency transistor ga as fet bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
1996 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract:
Text: devices. Figure 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction FET en and in characteristics are frequency- dependent within the audio noise spectrum , current in the gate channel junction . It is defined as where Rp is the real part of the gate-to-source , 4 2 10 p J/SST201­4 FET 0 1 kHz 2p 100 1p 500 f 1k 1p 10 k 100 k , AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field


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PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier transistor fn 1016 siliconix fet JFET APPLICATIONS jfets JFETs Junction FETs Siliconix AN106 2n5088 transistor 2N5088 equivalent 4KTR
2006 - 1000 watt buck converter scheme

Abstract:
Text: Resistor 4.0 V -0.3 V 1.0 mA 1.0 mA GATE(H)1, GATE(H)2 High-Side FET Driver for Channel , Low-Side FET Driver for Channel 1 or 2 16 V -0.3 V 1.5 A peak 200 mA DC 1.5 A peak 200 mA DC , FET driver pin for the channel 1 FET . 2 GATE(L)1 Low Side Synchronous FET driver pin for the channel 1 FET . 3 PGND1 4 LGND Logic ground. All control circuits are referenced to this pin , Side Synchronous FET driver pin for the channel 2 FET . 16 GATE(H)2 High Side Switch FET driver


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PDF CS5421 CS5421 SO-16 CS5421/D 1000 watt buck converter scheme CS5421GD16 CS5421GDR16
2001 - CS5421

Abstract:
Text: Resistor 4.0 V ­0.3 V 1.0 mA 1.0 mA GATE(H)1, GATE(H)2 High­Side FET Driver for Channel , Low­Side FET Driver for Channel 1 or 2 16 V ­0.3 V 1.5 A peak 200 mA DC 1.5 A peak 200 mA DC , GATE(H)1 High Side Switch FET driver pin for the channel 1 FET . 2 GATE(L)1 Low Side Synchronous FET driver pin for the channel 1 FET . 3 PGND1 4 LGND Logic ground. All control , . 13 VCC 14 PGND2 15 GATE(L)2 Low Side Synchronous FET driver pin for the channel 2


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PDF CS5421 CS5421 r14525 CS5421/D CS5421GD16 CS5421GDR16
2000 - transistor 2Fn

Abstract:
Text: Low-Side FET OnResistance Gate Drive (for Channel 2 Switching Regulator Controller) Iboot2 CBOOT Leakage , smaller input filter. The first switching controller ( Channel 1) features an Intel mobile CPU compatible , also compatible with the dynamic VID requirements. The second switching controller ( Channel 2) is , through sensing the Vds of the top FET and thus an external sense resistor is not necessary. A power , limit for either of the two switching channels is achieved through sensing the top FET Vds and the


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PDF LM2633 LM2633 transistor 2Fn 16uH inductor design procedures motorola transistor cross reference Thermal Shut Down Functioned MOSFET
2N5088 equivalent

Abstract:
Text: 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction , channel junction . It is defined as 4kTB Rp (4) where Rp is the real part of the , = 10 V 4 2 100 Hz 10 p 5p 10 p J/SST201­4 FET 100 1 kHz 2p 1p 500 f 1k , AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , . D S VIN Operating point considerations and minimizing noise figure. FET Under Test


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PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet transistor 2n5088 equivalent siliconix FET DESIGN Siliconix AN106 transistor FN 1016 Siliconix "low noise jfet" 2n930 equivalent
2000 - Not Available

Abstract:
Text: GATE(L)1, GATE(L)2 PGND1 PGND2 SGND LGND Pin Name High­Side FET Driver for Channel 1 or 2 Low­Side FET , Switch FET driver pin for the channel 1 FET . Low Side Synchronous FET driver pin for the channel 1 FET , GATE(H)2 and GATE(L)2 pins. Low Side Synchronous FET driver pin for the channel 2 FET . High Side Switch FET driver pin for the channel 2 FET . BLOCK DIAGRAM VCC ROSC BIAS CURRENT SOURCE GEN , dissipation in the FET switch does not cause the power component's junction temperature to exceed 150°C. The


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PDF CS5421 r14525 CS5421/D
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