The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
POWEREST Texas Instruments Power Estimation Tool (PET)
KGF20N05D Intersil Corporation N-Channel 5.5V Dual Power MOSFET
KGF16N05D-400 Intersil Corporation N-Channel 5.5V Dual Power MOSFET
EL7104CSZ-T7 Intersil Corporation High Speed, Single Channel, Power MOSFET Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C
EL7202CSZ-T13 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; SOIC8; Temp Range: -40° to 85°C
EL7212CNZ Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; PDIP8, SOIC8; Temp Range: -40° to 85°C

P Channel Power MOSFET IRF Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: Transceiver USB1T11A S-Correction IRF /IRFS630B 9A/200V N-Channel Power MOSFET IRF /IRFS6408 18A , N-Channel 9A/200V Power MOSFET FAN7000 300mW Audio Amplifier (stereo) IRF /IRFS634B N-Channel , Integrated Power Switches FQA/ P /B6N90 FOD2712 KA1M0680B ML4812 FQA11N90 FYAF3004DN , Memory Power Controller (VDDQ, VTT and VREF) FDB6035AL N-Channel Logic-Level PowerTrench MOSFET , Logic-Level PowerTrench MOSFET FDG326P P-Channel 1.8V Specified PowerTrench MOSFET Power Management


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
1996 - IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , P N N P P N N CHANNEL HARRIS DISCRETE POWER PRODUCT LINE TO-251AA/252AA , P P CHANNEL · BVDSS up to 1000V · All IRF types are avalanche capable · Size 1 , Pulse generators · Power supplies · Both N and P channel devices · Surface mount TO-251/2 , Series Power MOSFET TO-263AB Product Matrix HARRIS POWER PRODUCT LINE A L D 3 b 1


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PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
IRF P CHANNEL MOSFET

Abstract: SD1575 P Channel Power MOSFET IRF
Text: Driving Power Avalanche Rated 2SK2806-01 FAP-IIIB Series N-channel MOS-FET 30V 0,02& 35A 30W > Outline Drawing > Applications Motor Control General Purpose Power Amplifier DC-DC converters , MOS-FET 30V 0,02£2 I 35A 30W > Characteristics 2SK2806-01 FAP-IIIB Series Pow er Dissipation P IM , Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V D S I I V E D D ( p u ls) G S A V Rating 30 35 140 ±16 129,3 30 150 -5 5 - + 1 5 0


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PDF 2SK2806-01 IRF P CHANNEL MOSFET SD1575 P Channel Power MOSFET IRF
800w class d circuit diagram schematics

Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
Text: . . . . . . . . . . . . . . . . . . p 4 Electric Power Steering . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 34-35 Intelligent Power Modules . , . . . . . . . p 36 Intelligent Power Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 44-45 MOSFET - DirectFET . . . . . . . . .


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IRF MOSFET 100A 200v

Abstract: MOSFET 150 N IRF
Text: IRF W/I740A Fig 7. Breakdown Voltage vs. Temperature N -CHANN EL POWER MOSFET Fig 8 , A d van ced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology , N -CHANN EL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA Id , Independent of O perating Tem perature FAIRCHILD SEMICONDUCTORTM N -CHANN EL POWER MOSFET IRFW , Wave Pulse Duration [sec] FAIRCHILD SEMICONDUCTORTM N-CHANN EL POWER MOSFET IRFW/I740A


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PDF IRFW/I740A IRF MOSFET 100A 200v MOSFET 150 N IRF
IRF Power MOSFET code marking

Abstract: audio power amplifier mosfet IRF 740 N 95394A digital audio mosfet U120 R120 IRLU4343-701 IRLU4343 IRLR4343
Text: IRF U120 12 AS S EMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT , PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Features , designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques , such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly


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PDF 5394A IRLR4343PbF IRLU4343PbF IRLU4343-701PbF IRLR4343 IRLU4343 IRLU4343-701 IRLR/U4343PbF O-252AA) IRF Power MOSFET code marking audio power amplifier mosfet IRF 740 N 95394A digital audio mosfet U120 R120 IRLU4343-701 IRLU4343 IRLR4343
2000 - BUZ MOSFET

Abstract: power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
Text: [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ , of Intersil Corporation IRF TYPES IR XX XXX EQUIVALENT IR PART PACKAGE DESIGNATION: FA , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , : TO-205AF M: TO-204AA P : TO-220AB V: 5 Lead TO-247 1K: MS-012AA 1S: TO-263 (D2-PAK) 3S 5 Lead TO , 50V, 10 = 100V, 20 = 200V, etc. POLARITY N: N-Channel P : P-Channel CURRENT RATING 1 = 1A, 10 =


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
irf 249 A

Abstract: No abstract text available
Text: Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET VG S D = G ate P u lse , Advanced Power MOSFET FEATURES IRFW/I720A B^DSS - 400 V 1 .8 Q Avalanche Rugged , Current - N-CHANNEL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA , ) Essentially Independent of O perating Tem perature FAIRCHILD SEMICONDUCTORTM N-CHANNEL POWER MOSFET , N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Fig 9. Max. Safe Operating Area Fig 10


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PDF IRFW/I720A irf 249 A
2004 - MOSFET IRF 940

Abstract: MOSFET IRF IRLU7843 EIA-541 IRFU120 IRLR7843 R120 U120
Text: Rectification for Telecom and Industrial Use l Lead-Free HEXFET® Power MOSFET VDSS 30V Benefits l , Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U7843PbF Power MOSFET Selection for , ; * Ploss = Pconduction + P + Poutput drive ( 2 Ploss = Irms × Rds(on) ) Power losses in the , equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub , ) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET


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PDF 5440A IRLR7843PbF IRLU7843PbF IRLR7843 IRLU7843 AN-994. MOSFET IRF 940 MOSFET IRF IRLU7843 EIA-541 IRFU120 IRLR7843 R120 U120
9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
Text: Device ( M/ P , MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http , / P M/ P `07. 08 99 High Voltage MOS-FET First & Best First & Best 600V ~ 700V Line-up , - M/ P 600 650 700 KEC-H Corp. 10 10 High Voltage MOS-FET First & Best First & , -8 Leadless(4,5,6Pin) 1.0X0.6X0.28 QFN16 Multi Channel TSSOP-8 5.0X4.4X1.0 High Power Density


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
IRF 344

Abstract: IRF n 30v
Text: A d van ced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology , N -CHANN EL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA Id , SEMICONDUCTORTM N -CHANN EL POWER MOSFET IRFW/I710A Fig 2. Transfer Characteristics Fig 1. Output , . Breakdown Voltage vs. Temperature N -CHANN EL POWER MOSFET Fig 8. On-Resistance vs. Temperature Fig , N-CHANN EL POWER MOSFET IRFW/I710A Fig 12. Gate Charge Test Circuit & Waveform C urrent Sam pling


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PDF IRFW/I710A IRF 344 IRF n 30v
irf9220

Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Text: SAMSUNG 7 T ti 4 m E DUUÌ4 Jj 4 ü S I I POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i o u , DE | T T b m M E 5414 0 | - 2 0 0 Volt, 1.5 Ohm SFET IRF /IRFP9220, IRF9620 - 2 0 0 V ÌRF /IRFP9221, IRF9621 -1 5 0 V IRF /IRFP9222, IRF9622 - 2 0 0 V IRF /IRFP9223, IRF9623 - 1 50V 7 9 6 4 142 , RATINGS IRF /IRFP Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (Rgs= 1 .0M 0 ) (1 , Current-Pulsed (3) Gate Current-Pulsed Total Power Dissipation @ T o= 2 5 °C Derate above 25°C ' Operating and


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PDF IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 IRF/IRFP9220, IRF9620 RF/IRFP9221, IRF9621 IRF/IRFP9222, IRF9622 IRF/IRFP9223, irf9220 IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
2004 - DIODE 83A

Abstract: AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 MOSFET IRF 94
Text: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications , NUMBER IRF U120 56 AS S EMB LY LOT CODE www.irf.com 78 DAT E CODE P = DES IGNAT ES , , VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear , Conditions D MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction , = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1


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PDF 5549A IRFR13N15DPbF IRFU13N15DPbF AN1001) IRFR13N15D IRFU13N15D AN-994. DIODE 83A AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D R120 U120 MOSFET IRF 94
2005 - irf 418

Abstract: irf 48v mosfet irf 540 mosfet IRFS4310PBF
Text: Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , , VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear , ­­­ 62 40 Units °C/W www.irf.com 1 06/30/05 IRF /B/S/SL4310PbF Static @ TJ = 25 , A Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25


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PDF 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB IRFB4310PbF IRFS4310PbF O-262 EIA-418. irf 418 irf 48v mosfet irf 540 mosfet
transistor PNP A124

Abstract: CTC 880 3-PIN TRANSISTOR CTC 880 transistor 3 pin CTC 880 transistor
Text: Including IRF Data amplifier Data O/ P sink current 21 Data O/ P leakage current 21 Output , stream. Adjacent Channel Rejection is provided using tuneable gyrator filters. RF and Audio AGC , Very low power operation from single cell J Superior sensitivity J Operation at 512, 1200 and 2400 , . Security Systems 16 NAME IRF GND MIXIP A MIX DEC MIXIP B REG CNT VREG TPI I1 I2 VCC1 LOIP , , VCE=0.1 V LNA current source, IRF 1 375 500 700 mA PTAT, voltage on Pin 1 = 0.3V


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PDF SL6679 SL6679 450MHz. transistor PNP A124 CTC 880 3-PIN TRANSISTOR CTC 880 transistor 3 pin CTC 880 transistor
1999 - transistor 4F LNA

Abstract: flo14 flo16 Varactor Diode RF DS3853 AN137 SL6619
Text: signal level of 300mVp- p at TPI and TPQ Fig. 11 Typical IP3 and adjacent channel v. supply and , . Adjacent channel rejection is provided using tuneable gyrator filters. RF and audio AGC functions assist , provided to extend centre frequency acceptance. 32 31 30 29 28 27 26 25 IRF GND MIXIP A MIX DEC MIXIP B REG CNT VREG TPI FEATURES s Very Low Power Operation from Single Cell s Superior , Circuitry s Power Down Function s Battery Strength Indicator 9 10 13 7 I1 I2 VCC1 LOIP I GYR


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PDF SL6619 DS3853 SL6619 transistor 4F LNA flo14 flo16 Varactor Diode RF AN137
1998 - Not Available

Abstract: No abstract text available
Text: convert a binary FSK modulated RF signal into a demodulated data stream. Adjacent channel rejection is , Trays Features · Very Low Power Operation from Single Cell · Superior Sensitivity · Operation at 512 , Control Function · Programmable Post Detection Filter · AGC Detection Circuitry · Power Down Function · , Data Rate Receivers, e.g. Security Systems 32 31 30 29 28 27 26 25 IRF GND MIXIP A MIX DEC MIXIP , 29 30 31 32 Data Sheet Pin name IRF GND MIXIP A MIX DEC MIXIP B REG CNT VREG TPI I1 I2 VCC1 LOIP


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PDF SL6619 SL6619 SL6619/KG/TP1N SL6619/KG/TP1Q SL6619/KG/TP2Q SL6619/KG/TP2N
1999 - DS4410

Abstract: flo16 Varactor Diode RF AN137 flo14 SL6679
Text: IRF GND MIXIP A MIX DEC MIXIP B REG CNT VREG TPI FEATURES s Very Low Power Operation from , typical signal level of 300mVp- p at TPI and TPQ Fig. 11 Typical IP3 and adjacent channel v. supply and , demodulated data stream. Adjacent channel rejection is provided using tuneable gyrator filters. RF and audio , Detection Filter s AGC Detection Circuitry s Power Down Function s Battery Strength Indicator 9 10 13 , SL6679 Pin number Pin name Pin description 1 IRF LNA current source 2 GND Ground


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PDF SL6679 DS4410 SL6679 flo16 Varactor Diode RF AN137 flo14
irf540 switch

Abstract: transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor IRF540FI IRF540 F 540 NS
Text: r Z 7 SCS-THOM SON ^7#TM M©»H(LIËT[iMO(g§ IRF 540/FI-541/FI IRF 542/FI-543/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI · , SIZE TO-220 ISOWATT22Q INDUSTRIAL APPLICATIONS: · UNINTERRUPTIBLE POWER SUPPLIES · MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch , ISOWATT220 packages is determined by: P Tj ' Tc i n - -from this lDmax for the POWER MOS


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PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI irf540 switch transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor F 540 NS
transistor 4F LNA

Abstract: flo14 C2987 flo16 2400bps DSA0017466 SL6619 IRF C20 ZTX550 Toshiba rf power transistors
Text: Power Down Function · Battery Strength Indicator 32 31 30 29 28 27 26 25 IRF GND MIXIP A MIX , into a demodulated data stream. Adjacent channel rejection is provided using tuneable gyrator , tape and reel Features · Very Low Power Operation from Single Cell · Superior Sensitivity · , Information Pin description Pin name 1 IRF LNA current source 2 GND Ground 3 MIXIP , TPI I channel pre-gyrator filter test point. 9 I1 Mixer output, I channel 10 I2


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PDF SL6619 DS3853 SL6619 SL6619/KG/TP1N SL6619/clude transistor 4F LNA flo14 C2987 flo16 2400bps DSA0017466 IRF C20 ZTX550 Toshiba rf power transistors
2001 - flo14

Abstract: IRF C20 450 khz filter irf 260 irf p channel
Text: channel rejection is provided using tuneable gyrator filters. RF and audio AGC functions assist operation , in tape and reel Features · Very Low Power Operation from Single Cell · Superior Sensitivity · , Frequency Control Function · Programmable Post Detection Filter · AGC Detection Circuitry · Power Down , · Low Data Rate Receivers, e.g. Security Systems 32 31 30 29 28 27 26 25 IRF GND MIXIP A MIX , 20 21 22 23 24 25 26 27 28 29 30 31 32 Preliminary Information Pin name IRF GND MIXIP A MIX DEC


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PDF SL6619 DS3853 SL6619 SL6619/KG/TP1N SL6619/KG/TP1Q flo14 IRF C20 450 khz filter irf 260 irf p channel
DJ mixer power supply

Abstract: No abstract text available
Text: mA External PNP p > = 100, VCe=0.1 V LNA current source, IRF 1 375 500 700 ma , current 18 1.0 HA Including IRF Data amplifier Data O/ P sink current 21 Data O/ P , °C only Including IRF 1load =3mA. Ext PNP. P > = 100, VCE = 0.1 V External PNP 100, VCE=0.1 V p , f ï F C 3 1 P S r M I C O \ Ï F S S J F Y JULY 1996 PRELIMINARY , into a demodulated data stream. Adjacent Channel Rejection is provided using tuneable gyrator


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PDF SL6619 SL6619 450MHz. G02bflc 634C6 DJ mixer power supply
IRF Power MOSFET code marking

Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
Text: Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065 G ID = -31A S , NUMB ER IRF U120 56 AS SEMBLY LOT CODE 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT , speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the , straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels , @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) AN-994. IRFR/U5305PbF O-251AA) IRF Power MOSFET code marking IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
2004 - MOSFET IRF 941

Abstract: IRF P CHANNEL MOSFET P Channel Power MOSFET IRF P-channel power mosfet irf diode 8024 K02A HEXFET D2PAK ir 601 h IRF n CHANNEL MOSFET IRF Power MOSFET code marking
Text: PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G , 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE "L" INT E RNAT IONAL RECT IF IER L OGO Note: " P " in as s embly line pos ition indicates "L , CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L


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PDF IRL3102SPbF EIA-418. MOSFET IRF 941 IRF P CHANNEL MOSFET P Channel Power MOSFET IRF P-channel power mosfet irf diode 8024 K02A HEXFET D2PAK ir 601 h IRF n CHANNEL MOSFET IRF Power MOSFET code marking
2005 - IRF GATE LOGIC

Abstract: No abstract text available
Text: Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , , VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear , ­­­ 62 40 Units °C/W www.irf.com 1 06/28/05 IRF /B/S/SL3207PbF Static @ TJ = 25 , ­­­ ­­­ 180c ­­­ 720 A Conditions MOSFET symbol showing the integral reverse G S D ­­­ ­­­ 1.3


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PDF 95708B IRFB3207PbF IRFS3207PbF IRFSL3207PbF O-220AB IRFB3207PbF IRFS3207PbF O-262 EIA-418. IRF GATE LOGIC
Supplyframe Tracking Pixel