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TT Electronics OPTEK Technology
OP169B Emitter Ir 935NM 50mA Radial OP169B ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation OP169B Bulk 0 500 - - - $1.04 $1.04 More Info
Sager OP169B 0 1 $1.19 $1.19 $1.14 $1.07 $1.07 More Info

OP169B datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
OP169B OP169B ECAD Model OPTEK Technology Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR PLSTC GAAIAS SIDE LOOK Original PDF
OP169B OP169B ECAD Model OPTEK Technology GaAs plastic infrared emitting diode Scan PDF
OP169B OP169B ECAD Model OPTEK Technology GaAs Plastic Infrared Emitting Diode Scan PDF

OP169B Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: 0OTOK Product Bulletin OP169 June 1996 G aAs Plastic Infrared Emitting Diodes Types OP169A, OP169B , OP169C Features · Integral lens for narrow beam angle · Easily stackable on 0.100 inch (2.54 mm) hole centers · Mechanically and spectrally matched to the OP509 phototransistor series , 2-24 (972) 323-2200 Fax (972) 323-2396 Types OP169A, OP169B , OP169C Electrical , MIN TYP OP169C 0.027 OP169B 0.108 OP169A 0.180 MAX 0.220 1.60 100 UNITS mW/cm2 V HA nm nm nm


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PDF OP169 OP169A, OP169B, OP169C OP509
OP169

Abstract: OP169A OP169B OP169C OP509
Text: _ OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B , OP169C Features • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers • Mechanically and spectrally matched to the OP509 phototransistor series , ) 323-2200 Fax (972) 323-2396 2-24 Types OP169A, OP169B , OP169C Electrical Characteristics (Ta = 25° C , Incidence OP169C OP169B OP169A 0.027 0.108 0.180 0.220 mW/cm2 If = 20 mA(3) Vf Forward Voltage 1.60 V If


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PDF OP169 OP169A, OP169B, OP169C OP509 OP169A OP169B OP169C
Not Available

Abstract: No abstract text available
Text: (0 Product Bulletin OP169 April 1993 OPTEK G aAs Plastic Infrared Emitting Diodes Types OP169A, OP169B , OP169C 1-.100(2.54) NOM CATHODE J _ 500112.70] _ 4 - .150(3.81),. M IN 1 14013.56) tV-1 0 8 5 (2.16) .07511.911 Ö , .165(4.19) .155(3.94) ! 1 .064(1.631 , OP169A, OP169B , OP169C Electrical Characteristics (Ta = 25°C unless otherwise noted) SY M BO L Ee(APT) PARAM ETER Apertured Radiant Incidence MIN OP169C 0.027 OP169B 0.108 OP169A 0.180 TYP MAX


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PDF OP169 OP169A, OP169B, OP169C
DP509

Abstract: diameter lens phototransistor OP169 OP169A OP169B OP169C
Text: Product Bulletin OP169 June 1996 (©optek GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B , OP169C Features • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers • Mechanically and spectrally matched to the DP509 phototransistor series , 2-24 This Material Copyrighted By Its Respective Manufacturer Types OP169A, OP169B , OP169C , CONDITIONS Ee(apt) Apertured Radiant Incidence OP169C OP169B OP169A 0.027 0.108 0.180 0.220 mW/cm2 If = 20


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PDF OP169 OP169A, OP169B, OP169C DP509 QP509 0QQ257D diameter lens phototransistor OP169A OP169B OP169C
Not Available

Abstract: No abstract text available
Text: 0 . O PTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B , OP169C Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers â , , OP169B , OP169C Electrical Characteristics (Ta = 25° C unless oth erw ise noted) PARAMETER MIN Apertured Radiant Incidence Ee(APT) TYP MAX 0.220 OP169C 0.027 OP169B 0.108 OP169A 0.180


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PDF OP169 OP169A, OP169B, OP169C OP509
2007 - OP168F

Abstract: OP268FA OP269A OP538F OP509 OP508F OP269 OP268FPS OP268 OP169
Text: OP169A OP169B OP169C OP268FA OP268FB 0.50" OP268FC OP268FPS OP269A OP269B OP269C RoHS , 0.73 - OP169A OP169B OP169C 0.18 0.11 0.03 0.22 - OP268FA OP268FB OP268FC OP268FPS


Original
PDF OP168F, OP169, OP268F, OP269 OP168 OP268 OP169 OP269 OP168, OP268) OP168F OP268FA OP269A OP538F OP509 OP508F OP268FPS OP268 OP169
2012 - Not Available

Abstract: No abstract text available
Text: OP169A OP169B OP169C OP268FA OP268FB OP268FC OP268FPS OP269A OP269B OP269C 890 nm 18" 850 nm 50° 890 nm , OP169A OP169B OP169C OP268FA OP268FB OP268FC OP268FPS OP269A OP269B OP269C VF Forward Voltage OP168


Original
PDF OP168F, OP169, OP268F, OP269 OP168, OP268) OP269) OP168 OP268
Not Available

Abstract: No abstract text available
Text: mounted slotted switch LED Peak Wavelength OP168FC OP169A OP169B OP169C OP268FA OP268FB , 0.45 0.36 0.10 OP269A OP269B OP269C EE (APT)(3) 0.58 0.42 0.34 - OP169A OP169B


Original
PDF OP168F, OP169, OP268F, OP269 OP168 OP268 OP169 OP269 OP168, OP268)
OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 OPB875N51 MEXICO TRANSMISSIVE SENSOR OPB365T55 OPB840L55 OPB970N51
Text: OP296A, OP296B, OP296C 20 OP169A, OP169B , OP169C 20 OP297A, OP297B, OP297C 20 OP298A


Original
PDF F-Distributors9-12-05 OPB960N55 marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 OPB875N51 MEXICO TRANSMISSIVE SENSOR OPB365T55 OPB840L55 OPB970N51
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