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1999 - OMNIFET

Abstract: 1N4148 DO35 AS8401 BC141 BC141-10 j20 Schematic sgs bc141
Text: ASIC in a high side and a low side switch circuit. The switching device is the SGS-Thomson OmniFet. , pin's of the AS8401 and the OmniFet. That particularly applies if the OmniFet /AS8401 combination is , slope in the load circuit (the OMNIFET's source potential) (changes in the ASIC's ground potential of , control ASIC AS8401 for OMNIFET Application Note Multipurpose control ASIC for OMNINET ­ Application , for OMNIFET (SGS Thompson intelligent power FET family) · Contains one channel on the board


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PDF AS8401 AS8401 com/stonline/products/selector/314 OMNIFET 1N4148 DO35 BC141 BC141-10 j20 Schematic sgs bc141
1999 - OMNIFET

Abstract: 1N4148 DO35 AS8401 BC141 BC141-10 j20 Schematic AUSTRIA MIKRO SYSTEME INTERNATIONAL
Text: a high side and a low side switch circuit. The switching device is the SGSThomson OmniFet. The main , because of the fast changing potentials on the pin's of the AS8401 and the OmniFet. That particularly , ground shifts together with the switching slope in the load circuit (the OMNIFET's source potential , OMNIFET Application Note Multipurpose control ASIC for OMNINET ­ Application Note AS8401 , OMNIFET (SGS Thompson intelligent power FET family) · Contains one channel on the board ·


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PDF AS8401 AS8401 com/stonline/products/selector/314 OMNIFET 1N4148 DO35 BC141 BC141-10 j20 Schematic AUSTRIA MIKRO SYSTEME INTERNATIONAL
1999 - MIKRO PF REGULATOR

Abstract: automatic change over switch circuit diagram 27OC AS8401 OMNIFET
Text: device. ( OMNIFET is a s trademark of SGS-THOMSON). The OMNIFET' integrated protection circuits (current limitas tion, over temperature protection, .) are supplied via the OMNIFET' gate input. Thus in the s OMNIFET' on-state, a DC gate current of 0.5mA is required. In a failure case (e.g. excessive s temperature) an internal resistor of about 100 is connected between the OMNIFET' gate s and source. This , the present driver voltage related to OMNIFET' source s potential. · Error detection for the


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PDF AS8401 MIKRO PF REGULATOR automatic change over switch circuit diagram 27OC AS8401 OMNIFET
2003 - VNS1NV04D

Abstract: omnifet ii OMNIFET
Text: VNS1NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS(on) 250 , The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , ) t Figure 2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D Rgen Vgen VDD I OMNIFET S 8.5 6/14 1


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PDF VNS1NV04D VNS1NV04D omnifet ii OMNIFET
1996 - OMNIFET

Abstract: VB020-4 Depletion MOSFET VB020 depletion mode current limiter VN02N equivalent VN02NSP equivalent VB921ZVFI equivalent vnd7n04 VN370B
Text: overstress of the MOSFET under harsh conditions. The FEATURES VDD OMNIFET's ability to Unrivalled , SMART HIGH SIDE DRIVERS OMNIFETs - AUTOPROTECTED POWER MOSFETs Type VCLAMP RDS(on) (V , -10 PowerSO-10 Linear Current Limit ESD Protected Voltage Clamping Logic Level OMNIFET OMNIFET , supplier of smart power devices offers OMNIFETs , an outstanding family of fully autoprotected low voltage Power MOSFETs that will make application design much easier. During normal operation OMNIFETs react


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PDF VNW100N04 VNW50N04 VNP49N04 VNP49N04FI VNV49N04 VNB49N04 VNP35N07 VNP35N07FI VNV35N07 VNB35N07 OMNIFET VB020-4 Depletion MOSFET VB020 depletion mode current limiter VN02N equivalent VN02NSP equivalent VB921ZVFI equivalent vnd7n04 VN370B
2000 - OMNIFET

Abstract: VNS3NV04D omnifet ii
Text: VNS3NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNS3NV04D RDS(on) 120 m (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n n n n n , DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , DIODE OMNIFET S L=100uH B B 220 D R gen Vgen VDD I OMNIFET S 8.5 6


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PDF VNS3NV04D VNS3NV04D OMNIFET omnifet ii
2000 - VNA7NV04D

Abstract: No abstract text available
Text: VNA7NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETS TARGET SPECIFICATION TYPE , The VNA7NV04D is a device |formed by two| monolithic OMNIFET II chips housed in a standard SO-16 package with double island. The OMNIFET II are designed in STMicroelectronics VIPower M0 Technology , chip) A A D I FAST DIODE OMNIFET S L=100uH B B 25 D Rgen Vgen VDD I OMNIFET S 8.5 6/10 1 VNA7NV04D Fig. 3: Unclamped Inductive Load Test


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PDF VNA7NV04D VNA7NV04D SO-16
2000 - VNS1NV04D

Abstract: OMNIFET B330D
Text: VNS1NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE , DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 SO-8 Technology: they are , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D R gen Vgen VDD I OMNIFET S 8.5 6/11 1


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PDF VNS1NV04D VNS1NV04D OMNIFET B330D
2002 - B330D

Abstract: VNS1NV04D
Text: VNS1NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS(on) 250 , VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 SO-8 Technology: they are intended for , ) t Figure 2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D R gen Vgen VDD I OMNIFET S 8.5 6/14 1


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PDF VNS1NV04D VNS1NV04D B330D
2005 - OMNIFET

Abstract: JESD97 VNS3NV04D-E VNS3NV04TR-E
Text: VNS3NV04D-E " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Features RDS(on) TYPE , MOSFET SO-8 The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are , is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. Order , Times A A D I FAST DIODE OMNIFET S L=100uH B B 220W D Rgen V gen V DD I OMNIFET S 8.5 W 8/17 VNS3NV04D-E Figure 6. 4 Test circuit diagrams


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PDF VNS3NV04D-E VNS3NV04D-E 50KHz OMNIFET JESD97 VNS3NV04TR-E
2002 - VNS3NV04D

Abstract: No abstract text available
Text: VNS3NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS(on) 120 , VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 220 D R gen Vgen VDD I OMNIFET S 8.5 6/14 1


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PDF VNS3NV04D VNS3NV04D
2003 - VNS3NV04D

Abstract: OMNIFET
Text: VNS3NV04D ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS(on) 120 m (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n , a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET , DIODE OMNIFET S L=100uH B B 220 D Rgen Vgen VDD I OMNIFET S 8.5 6


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PDF VNS3NV04D VNS3NV04D OMNIFET
2000 - VN1160

Abstract: VN1160T st VN1160 PENTAWATT VN116 VN02H VND610 VN380SP vnq660sp VN540SP
Text: Complete H-Bridge (2 H.S.D. + 2 PowerMOS) Complete H-Bridge (2 H.S.D. + 2 OMNIFET ) Complete H-Bridge (2 H.S.D. + 2 OMNIFET ) Direction Indicator Driver for Motorbike Direction Indicator Driver for Motorbike , 2 OMNIFET ) Glow plug for diesel motors SMPS Primary ICs Type BVDSS (V) VIPer20 VIPer20SP , ; · in development. OMNIFETs - Autoprotected Power MOSFETs Type VNP35NV04 VNB35NV04 VNV35NV04 , -82FM ISOWATT220 SOT-223 SO-8 DPAK IPAK SO-8/2 VIPower, VIPer, OMNIFET , PowerSO-10, PowerSO-20, PENTAWATT


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PDF VN330SP VN340SP VN450 VND05B VND05BSP VND10B VND10BSP VND600SP· VNQ600· VND610· VN1160 VN1160T st VN1160 PENTAWATT VN116 VN02H VND610 VN380SP vnq660sp VN540SP
2003 - OMNIFET

Abstract: No abstract text available
Text: DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , I FAST DIODE OMNIFET S L=100uH B B 330Ω D Rgen Vgen VDD I OMNIFET S 8.5 Ω 6/14 1 VNS1NV04D Figure 3: Unclamped Inductive Load Test Circuits


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PDF VNS1NV04D VNS1NV04D OMNIFET
2003 - omnifet ii

Abstract: No abstract text available
Text: DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 220Ω D Rgen Vgen VDD I OMNIFET S 8.5 Ω 6/14 1


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PDF VNS3NV04D VNS3NV04D omnifet ii
2003 - CWC1

Abstract: VND7NV04 VND7NV04-1 VND7NV0413TR VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR L-12129
Text: VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1 ® " OMNIFET II": FULLY AUTOPROTECTED POWER , Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 150 D Rgen Vgen VDD I OMNIFET S 8.5 6/29 1 VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04 , ) Thermal fitting model of an OMNIFET II in DPAK 10 100 1000 Pulse calculation formula Z TH , 0.001 0.01 0.1 1 T ime (s) Thermal fitting model of an OMNIFET II in SO-8 10 100


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PDF VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 VNN7NV04 VND7NV04 OT-223 VNN7NV04, CWC1 VND7NV04-1 VND7NV0413TR VNN7NV0413TR VNS7NV04 VNS7NV0413TR L-12129
2004 - VND14NV04

Abstract: VNB14NV04 VNB14NV0413TR VND14NV04-1 VND14NV0413TR VNP14NV04 VNS14NV04
Text: ® VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14NV04 RDS(on) Ilim Vclamp 3 VND14NV04 VND14NV04-1 1 , D I FAST DIODE OMNIFET S L=100uH B B 25 D Rgen Vgen VDD I OMNIFET , ) Thermal fitting model of an OMNIFET II in DPAK 10 100 1000 Pulse calculation formula Z TH , 0.0001 0.001 0.01 0.1 1 Time (s) Thermal fitting model of an OMNIFET II in D2PAK 10


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PDF VNB14NV04 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 VNB14NV04 VND14NV04-1 O-252 VNP14NV04 VND14NV04 VNB14NV0413TR VND14NV0413TR VNS14NV04
2013 - VNS3NV04P

Abstract: No abstract text available
Text: OMNIFET IIITM . 10 , OMNIFETTM . 9 , . 20 OMNIFET part numbering scheme. 21 OMNIFET , . 22 Note: M0-7 High side switches and OMNIFET III are to be preferred for new design-in. 2 , applications • • • OMNIFETTM SMART POWER LOW-SIDE SWITCHES Part number VND1NV04-E VND1NV04â


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PDF SGCAR1013 TQFP64 PowerSSO-12/16 PowerSSO-36 O-220 OT-223 PowerSO-10 VNS3NV04P
2010 - VNS1NV04DP

Abstract: VNS1NV04D vns1nv04dpe
Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance(1 , formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed , recovery times A D I A FAST DIODE OMNIFET S B L=100uH B 330 Rgen I D VDD OMNIFET , Functions » Low Side Switches » VNS1NV04D VNS1NV04D Active OMNIFET II :FULLY AUTOPROTECTED POWER , /automotive/product/65690.jsp 23-4-2012 ® VNS1NV04D " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET


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PDF VNS1NV04DP-E 2002/95/EC VNS1NV04DP-E VNS1NV04DP VNS1NV04D vns1nv04dpe
2001 - VNB35

Abstract: No abstract text available
Text: ® VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 RDS(on) 10 m Ilim Vclamp 10 30 A 40 V 1 3 1 D2PAK PowerSO-10TM n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT , Vgen t Fig.2: Test Circuit for Diode Recovery Times A D I A FAST DIODE OMNIFET S 25 B L=100uH B D Rgen VDD I OMNIFET S Vgen 8.5 6/15 1 VNB35NV04


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PDF VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 PowerSO-10TM O-220 VNB35
2001 - VND3N

Abstract: A1 SOT-223 MOSFET
Text: ® VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 n n n n n n RDS(on) 120 m Ilim Vclamp 2 2 3 SO-8 3.5 A 40 V 1 SOT-223 n n LINEAR CURRENT LIMITATION THERMAL SHUT DOWN , t Fig.2: Test Circuit for Diode Recovery Times A D I A FAST DIODE OMNIFET S B L=100uH B 220 R gen I D VDD OMNIFET S Vgen 8.5 6/17 1 VNN3NV04 / VNS3NV04


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PDF VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 OT-223 OT-223 VND3N A1 SOT-223 MOSFET
2000 - VNN3NV04

Abstract: VND3NV04 VND3NV04-1 VNS3NV04
Text: VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 n n n n n n n n n RDS(on) Ilim Vclamp 120 m 3.5 A 40 V LINEAR CURRENT LIMITATION THERMAL SHUT DOWN , A A D I FAST DIODE OMNIFET S L=100uH B B 220 D R gen Vgen VDD I OMNIFET S 8.5 6/17 1 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Thermal


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PDF VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 VNN3NV04 VND3NV04 VNN3NV04, VNS3NV04, VND3NV04-1 VNS3NV04
2000 - VNB35NV04

Abstract: VNP35NV04 VNV35NV04
Text: VNB35NV04 / VNV35NV04 / VNP35NV04 ® " OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB35NV04 RDS(on) Ilim Vclamp VNV35NV04 10 m 30 A 40 V 10 3 VNP35NV04 n n n n n n n n n 1 1 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT , OMNIFET S L=100uH B B 25 D R gen Vgen VDD I OMNIFET S 8.5 6/14 1


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PDF VNB35NV04 VNV35NV04 VNP35NV04 VNV35NV04 VNB35NV04, VNV35NV04, VNP35NV04, PowerSO-10TM VNB35NV04 VNP35NV04
2009 - VND7NV04-E

Abstract: VNS7NV0413TR VNN7NV0413TR VNN7NV04 VND7NV04-1-E VND7NV0413TR VND7NV04-1 VND7NV04 TO252 pulse load calculation formula for single pulse
Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features , . . . . . . . . . . . . . . . . . . . . . . . . . 21 Thermal fitting model of an OMNIFET II in SO , 23 Thermal fitting model of an OMNIFET II in SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . , pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal fitting model of an OMNIFET II in , times A A D I FAST DIODE OMNIFET S L=100uH B B 150 D Rgen I Vgen


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PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC VND7NV04-E VNS7NV0413TR VNN7NV0413TR VNN7NV04 VND7NV04-1-E VND7NV0413TR VND7NV04-1 VND7NV04 TO252 pulse load calculation formula for single pulse
2013 - Not Available

Abstract: No abstract text available
Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features , . . . . . . . . . . . . . . . . . . . . . . . . . 21 Thermal fitting model of an OMNIFET II in SO , 23 Thermal fitting model of an OMNIFET II in SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . , pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal fitting model of an OMNIFET II in , times A A D I FAST DIODE OMNIFET S L=100uH B B 150Ω D Rgen VDD I


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PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC
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