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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

OF TRANSISTOR AT 30B to92 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - OF TRANSISTOR AT 30B to92

Abstract: S-812C21AMC-C2B-T2 13003 MOSFET transistor 812c S-812C50BMC-C5E-T2 812C50 S-812C35AUA-C2P-T2 S-812C 13003 TRANSISTOR equivalent pnp C2f SOT-89
Text: Shoot(V) S-812C 30B 0.030 Over Shoot(V) 40 Temperature dependence of overshoot at , -812C 30B 0.1 0.0 0 5 10 V DD (V) 15 50 Temperature dependence of overshoot at , : UP005-A) TO-92 (Package drawing code : YF003-A) Note1 Power dissipation of the package should be taken , fixing IOUT(=10 mA) and inputting VOUT(S)+2.0 V. Output current at which output voltage becomes 95% of , Input voltage at which output voltage becomes 98% of VOUT(E) after gradually decreasing input voltage


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PDF S-812C OF TRANSISTOR AT 30B to92 S-812C21AMC-C2B-T2 13003 MOSFET transistor 812c S-812C50BMC-C5E-T2 812C50 S-812C35AUA-C2P-T2 13003 TRANSISTOR equivalent pnp C2f SOT-89
S-812

Abstract: 13003 TRANSISTOR equivalent pnp 13003 MOSFET transistor OF TRANSISTOR AT 30B to92 voltage regulator AXX S-812C50AY-X S-812C20AMC-C2A-T2 S-812C30BMC-C4K-T2 S-812C22AMC-C2C-T2 S-812C50BMC-C5E-T2
Text: ) VDD dependence of undershoot at load transient 0.20 10 0.10 0.05 S-812C 30B 0.00 0 5 , : UP005-A) TO-92 (Package drawing code : YF003-A) Note1 Power dissipation of the package should be taken , VIN1 is the Input voltage at which output voltage becomes 98% of VOUT(E) after gradually decreasing , measured value of output voltage at 25°C. VOUT(E) -0.30mV/°C -40 25 Ta [°C] 85 Figure , Pch MOS transistor as the output transistor . The voltage at VOUT must not exceed VIN+0.3V. When the


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PDF S-812C S-812C S-812 13003 TRANSISTOR equivalent pnp 13003 MOSFET transistor OF TRANSISTOR AT 30B to92 voltage regulator AXX S-812C50AY-X S-812C20AMC-C2A-T2 S-812C30BMC-C4K-T2 S-812C22AMC-C2C-T2 S-812C50BMC-C5E-T2
2003 - smd transistor 7k

Abstract: OF TRANSISTOR AT 30B to92 transistor AY PNP smd PDTA144E Transistor SMD SOT363 SC70 transistor digital 47k 22k PNP NPN LPC2100 smd diode 7k SOT346 ZENER PSS9014
Text: BISS Transistor + MEGA Schottky diode TR D Vout L C Integration of two devices in one , high-performance and low-power, these devices operate at 60 MHz (54 Dhrystone MIPS) and feature 128-bit wide , . 2. PH3230S and PH8230E Extended range of N-Channel MOSFETs in LFPAK 3. BUK1M200-50SDLD Quad , BISS transistor combination in SOT457 (SC-74) 7. PMV213SN, PMV117EN, PMV60EN, PMV45EN, PMV56XN and , PH8230E Extended range of N-Channel MOSFETs in LFPAK Our N-channel MOSFET range of devices in the


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PDF LPC210x LPC2100 32-bit 16-bit 32-bit. 128-bit smd transistor 7k OF TRANSISTOR AT 30B to92 transistor AY PNP smd PDTA144E Transistor SMD SOT363 SC70 transistor digital 47k 22k PNP NPN smd diode 7k SOT346 ZENER PSS9014
2003 - OF TRANSISTOR AT 30B to92

Abstract: S-812C40BMC-C4U-T2 diode C5d C2N SOT-23 C5F sot C2f SOT-89 S-812C S-812C20AMC-C2A-T2 S-812C20AUA-C2A-T2 S-812C21AMC-C2B-T2
Text: ) and inputting VOUT(S)+2.0 V. *2. Output current at which output voltage becomes 95% of VOUT(E) after , measured value of output voltage at 25°C. Figure 12 12 Seiko Instruments Inc. HIGH OPERATING , Transistor The S-812C Series uses a Pch MOS FET as the output transistor . The voltage at VOUT must not , operation at light load less than 100 µA is halted, output voltage may increase. If the increase of the , of the short-circuit protection which protects the output transistor against short-circuit between


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PDF S-812C OF TRANSISTOR AT 30B to92 S-812C40BMC-C4U-T2 diode C5d C2N SOT-23 C5F sot C2f SOT-89 S-812C20AMC-C2A-T2 S-812C20AUA-C2A-T2 S-812C21AMC-C2B-T2
2004 - BUK2114

Abstract: SMPS CIRCUIT DIAGRAM tea1506p IRF540 n-channel MOSFET BATTERY CHARGER tea1507 BUK2914-50SYTS TEA1620 BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
Text: technology used for all devices, giving outstanding performance * Wide variety of operating voltages, RDS , flexibility * Suitable for a wider variety of automotive switching applications * True Logic Level and , 75 75 60 55 60 55 30 75 75 49 48 46 47 D2PAK (SOT404) BUK7607- 30B BUK9607- 30B , 192 BUK7E2R7- 30B BUK7507- 30B BUK9507- 30B BUK753R1-40B BUK953R2-40B BUK754R3-40B BUK954R4 , of operating voltages, RDS(ON) values, drain current ratings, power handling and package types -


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PDF OT223) BUK6213-30A BUK9213-30A BUK7604-40A BUK9604-40A OT404) OT428) BUK7605-30A BUK9605-30A OT226 BUK2114 SMPS CIRCUIT DIAGRAM tea1506p IRF540 n-channel MOSFET BATTERY CHARGER tea1507 BUK2914-50SYTS TEA1620 BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
2005 - TEA1620

Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
Text: products cover virtually all aspects of power and power management ­ from the smallest µTrenchMOS devices , this dedicated application of power that helps makes Philips portfolio stand out. Our broad and deep , , while our STARplug ICs provide turnkey solutions for a host of power plug applications.This is backed , . Supported by our global organization and meeting the requirements of a wide variety of applications, we have the power to ensure consumers are always connected. pa g e 2 Table of contents 4


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2003 - S-812C50AMC-C3ET2

Abstract: No abstract text available
Text: ) × 0.98), where VIN1 is the Input voltage at which output voltage becomes 98% of VOUT(E) after , Ta [°C] *1. VOUT(E) is a measured value of output voltage at 25°C. Figure 12 Ex. S-812C30A Typ , . The voltage at VOUT must not exceed VIN+0.3V. When the VOUT voltage becomes higher than that of VIN , electrolytic capacitor increases at low temperature and possibility of oscillation becomes large. Sufficient , transistor . The S-812C controls the base current of the PNP transistor so that the output voltage VOUT


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PDF S-812C S-812C50AMC-C3ET2
2008 - BUT11ApX equivalent

Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 power management selection guide BT136 testing BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Text: Power Management selection guide 2008 Leading the power efficient connected world Table of , 100 75 4.9 PSMN005-25D PHP66NQ03LT PH2230AL PSMN003- 30B PSMN003-30P PH3030AL 98 , selection guide 2008 TO92 (SOT54) PMV65XP 0.87 650 8000 920 900 SOT89 PMN50XP , 75 30 7 10 75 BUK7607- 30B BUK7207- 30B BUK7507- 30B 30 7 5 75 BUK9607- 30B BUK9207- 30B SOT226 I2PAK VDS (V) RDS(ON) (m) @VGS (V) ID (max) @ 25


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2002 - Transistor SMD SOT363 SC70

Abstract: D2Pak Package BSP254A IRF540 complementary PHD78NQ MOSFET Selection Guide list of n channel fet IRF640 smd PSMN009-100W BUK7516
Text: ) is an innovative powertrain solution capable of operating at switching frequencies up to 1 MHz , Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy , date. Some of our recent innovations include: LFPAK and QLPAK packages ­ (see page 4-5 and 8-9 , conversion applications. Out of the many new solutions we're introducing this year, our new µTrenchMOS portfolio will certainly generate interest. (see page 4-6) Taking advantage of Philips' core competencies


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2001 - OF TRANSISTOR AT 30B

Abstract: TIP29C cross reference Fairchild Semiconductor tip29
Text: Applications · Complementary to TIP30/30A/ 30B /30C 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base , authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST , HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE


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PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C O-220 TIP29 TIP29A TIP29B TIP29C OF TRANSISTOR AT 30B TIP29C cross reference Fairchild Semiconductor tip29
2000 - OF TRANSISTOR AT 30B

Abstract: No abstract text available
Text: TIP30 Series(TIP30/30A/ 30B /30C) TIP30 Series(TIP30/30A/ 30B /30C) Medium Power Linear Switching , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base , , February 2000 TIP30 Series(TIP30/30A/ 30B /30C) Typical Characteristics VBE(sat), VCE(sat)[mV , Fairchild Semiconductor International Rev. A, February 2000 TIP30 Series(TIP30/30A/ 30B /30C , not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM


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PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B
SSN SOT-23

Abstract: J308 marking hb3 package marking 33b sot-23 marking z08
Text: . These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to , -310 Plastic TO-92 -55°C to+135°C SST308-310 Plastic SOT-23 -55°C to+135°C For Sorted Chips in Carriers see , -1.0 -1.0 V gS(oH ) loss Vgs() 9fs gos -1.0 12 -6.5 60 10 10,000 17,000 250 12,000 150 -1.0 12 30B TYP , Power Gain at Noise Match Noise Figure Common-Gate Power Gain at Noise Match Noise Figure 308 TYP MAX


OCR Scan
PDF J310/SST308-SST3W 100dB -10mA 450MHz 105MHz 100Hz 1A44322 SSN SOT-23 J308 marking hb3 package marking 33b sot-23 marking z08
2011 - BUK75

Abstract: BUK7607-30B AT 30B
Text: Version © NXP B.V. 2011. All rights reserved. 2 of 14 BUK7607- 30B NXP Semiconductors , function of mounting base temperature BUK7607- 30B Product data sheet 50 100 150 200 Tmb , February 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BUK7607- 30B NXP Semiconductors , of 14 BUK7607- 30B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal , mounting base as a function of pulse duration BUK7607- 30B Product data sheet All information


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PDF BUK7607-30B BUK75 BUK7607-30B AT 30B
2010 - BUK75

Abstract: BUK7E2R7-30B
Text: 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BUK7E2R7- 30B NXP Semiconductors , . 3 of 14 BUK7E2R7- 30B NXP Semiconductors N-channel TrenchMOS standard level FET 03ng51 , drain currents as a function of drain-source voltage BUK7E2R7- 30B Product data sheet All , . 2010. All rights reserved. 4 of 14 BUK7E2R7- 30B NXP Semiconductors N-channel TrenchMOS , mounting base as a function of pulse duration BUK7E2R7- 30B Product data sheet All information


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PDF BUK7E2R7-30B BUK75 BUK7E2R7-30B
2000 - TIP30

Abstract: DATASHEET OF TRANSISTOR tip30 tip30c TIP30A TIP30B TIP30 transistor OF TRANSISTOR AT 30B OF TRANSISTOR tip30
Text: TIP30 Series(TIP30/30A/ 30B /30C) TIP30 Series(TIP30/30A/ 30B /30C) Medium Power Linear Switching Applications · Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor , (TIP30/30A/ 30B /30C) Typical Characteristics TIP30 Series(TIP30/30A/ 30B /30C) Package Demensions , intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM , LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT


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PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C DATASHEET OF TRANSISTOR tip30 tip30c TIP30A TIP30B TIP30 transistor OF TRANSISTOR AT 30B OF TRANSISTOR tip30
2010 - BUK752R7

Abstract: BUK75 BUK752R7-30B
Text: 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUK752R7- 30B NXP Semiconductors , disclaimers. Rev. 04 - 7 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK752R7- 30B , . 04 - 7 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BUK752R7- 30B NXP , 6 0 Fig 7. Sub-threshold drain current as a function of gate-source voltage BUK752R7- 30B , disclaimers. Rev. 04 - 7 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BUK752R7- 30B


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PDF BUK752R7-30B BUK752R7 BUK75 BUK752R7-30B
2010 - 30B2 diode

Abstract: 30b4 diode
Text: © NXP B.V. 2010. All rights reserved. 2 of 14 BUK9Y22- 30B NXP Semiconductors N-channel , reserved. 3 of 14 BUK9Y22- 30B NXP Semiconductors N-channel TrenchMOS logic level FET , avalanche rating; avalanche current as a function of avalanche time BUK9Y22- 30B Product data sheet , © NXP B.V. 2010. All rights reserved. 4 of 14 BUK9Y22- 30B NXP Semiconductors N-channel , - ns - 33 - nC © NXP B.V. 2010. All rights reserved. 6 of 14 BUK9Y22- 30B


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PDF BUK9Y22-30B 30B2 diode 30b4 diode
2010 - Not Available

Abstract: No abstract text available
Text: rights reserved. 2 of 14 BUK7Y07- 30B NXP Semiconductors N-channel TrenchMOS standard level , . 3 of 14 BUK7Y07- 30B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac504 , avalanche rating; avalanche current as a function of avalanche time BUK7Y07- 30B Product data sheet , © NXP B.V. 2010. All rights reserved. 4 of 14 BUK7Y07- 30B NXP Semiconductors N-channel , function of pulse duration. BUK7Y07- 30B Product data sheet All information provided in this


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PDF BUK7Y07-30B
2010 - 30B3 diode

Abstract: 30b4 30B2 diode 30B4 diode 30B3
Text: . 2010. All rights reserved. 3 of 14 BUK7Y20- 30B NXP Semiconductors N-channel TrenchMOS , and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7Y20- 30B , . 04 - 7 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUK7Y20- 30B NXP , of pulse duration. BUK7Y20- 30B Product data sheet All information provided in this document , . 5 of 14 BUK7Y20- 30B NXP Semiconductors N-channel TrenchMOS standard level FET 6


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PDF BUK7Y20-30B 30B3 diode 30b4 30B2 diode 30B4 diode 30B3
2010 - OF TRANSISTOR AT 30B

Abstract: BUK9207-30B
Text: . 2010. All rights reserved. 3 of 14 BUK9207- 30B NXP Semiconductors N-channel TrenchMOS , operating area; continuous and peak drain currents as a function of drain-source voltage BUK9207- 30B , . 03 - 16 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUK9207- 30B NXP , mounting base as a function of pulse duration BUK9207- 30B Product data sheet All information , . All rights reserved. 5 of 14 BUK9207- 30B NXP Semiconductors N-channel TrenchMOS logic


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PDF BUK9207-30B OF TRANSISTOR AT 30B BUK9207-30B
2006 - BUK75

Abstract: BUK753R4-30B BUK763R4-30B
Text: January 2006 2 of 14 BUK753R4- 30B ; BUK763R4- 30B Philips Semiconductors N-channel TrenchMOS , Electronics N.V. 2006. All rights reserved. Rev. 01 - 5 January 2006 3 of 14 BUK753R4- 30B ; BUK763R4- 30B , 2006 6 of 14 BUK753R4- 30B ; BUK763R4- 30B Philips Semiconductors N-channel TrenchMOS , 7 of 14 BUK753R4- 30B ; BUK763R4- 30B Philips Semiconductors N-channel TrenchMOS standard , . All rights reserved. Rev. 01 - 5 January 2006 8 of 14 BUK753R4- 30B ; BUK763R4- 30B Philips


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PDF BUK753R4-30B; BUK763R4-30B BUK75 BUK753R4-30B BUK763R4-30B
2010 - Not Available

Abstract: No abstract text available
Text: B.V. 2010. All rights reserved. 3 of 14 BUK7E2R7- 30B NXP Semiconductors N-channel , disclaimers. Rev. 04 — 7 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUK7E2R7- 30B , disclaimers. Rev. 04 — 7 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK7E2R7- 30B , . All rights reserved. 6 of 14 BUK7E2R7- 30B NXP Semiconductors N-channel TrenchMOS standard , . Sub-threshold drain current as a function of gate-source voltage BUK7E2R7- 30B Product data sheet 20


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PDF BUK7E2R7-30B
2010 - Not Available

Abstract: No abstract text available
Text: June 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BUK9207- 30B NXP Semiconductors , . 03 — 16 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUK9207- 30B NXP , of 14 BUK9207- 30B NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal , disclaimers. Rev. 03 — 16 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK9207- 30B , © NXP B.V. 2010. All rights reserved. 6 of 14 BUK9207- 30B NXP Semiconductors N-channel


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PDF BUK9207-30B
2010 - Not Available

Abstract: No abstract text available
Text: B.V. 2010. All rights reserved. 2 of 14 BUK9Y07- 30B NXP Semiconductors N-channel , April 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUK9Y07- 30B NXP Semiconductors , thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y07- 30B , . 03 - 7 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUK9Y07- 30B NXP , of 14 BUK9Y07- 30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aad489 80


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PDF BUK9Y07-30B
2010 - 30B2 diode

Abstract: TOPFET high side switch
Text: 7 April 2010 Version © NXP B.V. 2010. All rights reserved. 2 of 14 BUK7Y07- 30B NXP , as a function of avalanche time BUK7Y07- 30B Product data sheet All information provided in , rights reserved. 4 of 14 BUK7Y07- 30B NXP Semiconductors N-channel TrenchMOS standard level , rights reserved. 6 of 14 BUK7Y07- 30B NXP Semiconductors N-channel TrenchMOS standard level , © NXP B.V. 2010. All rights reserved. 7 of 14 BUK7Y07- 30B NXP Semiconductors N-channel


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PDF BUK7Y07-30B 30B2 diode TOPFET high side switch
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