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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1772BIS6#TR Linear Technology IC 1 A SWITCHING CONTROLLER, 650 kHz SWITCHING FREQ-MAX, PDSO6, PLASTIC, MO-193, SOT-23, 6 PIN, Switching Regulator or Controller
LTC1772BIS6 Linear Technology IC 1 A SWITCHING CONTROLLER, 650 kHz SWITCHING FREQ-MAX, PDSO6, PLASTIC, MO-193, SOT-23, 6 PIN, Switching Regulator or Controller
LT3470HTS8#TR Linear Technology IC SWITCHING REGULATOR, PDSO8, 1 MM HEIGHT, PLASTIC, MO-193, SOT-23, 8 PIN, Switching Regulator or Controller
LT3470HTS8 Linear Technology IC SWITCHING REGULATOR, PDSO8, 1 MM HEIGHT, PLASTIC, MO-193, SOT-23, 8 PIN, Switching Regulator or Controller
LTC4440ES6#PBF Linear Technology IC 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO6, PLASTIC, MO-193, SOT-23, 6 PIN, MOSFET Driver
LTC4440ES6-5#PBF Linear Technology IC 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO6, 1 MM, LEAD FREE, PLASTIC, MO-193, SOT-23, 6 PIN, MOSFET Driver

NPN Transistor 1A metal switching Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CA18CLN12PA

Abstract: CA18CLN12PAM1 CA18CLF08PAM1 liquid capacitive proximity sensors CA18CLF08NAM1 ca18clf08nam CA18CLF08PA liquid capacitive proximity sensor CA18CLN12NA CA18CLF08NA
Text: operating dist. (Sn) 1) M18 M18 8 mm 12 mm Ordering no. Transistor NPN /cable Make & break switching Flush (built-in) CA18CLF08NA Non-flush CA18CLN12NA Ordering no. Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & break switching CA18CLF08NAM1 CA18CLN12NAM1 CA18CLF08PA CA18CLN12PA , sensing distance 8 mm flush mounted in metal or sensing distance 12 mm nonflush mounted. 4-wire DC


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PDF CA18CL. CA18CLN12PA CA18CLN12PAM1 CA18CLF08PAM1 liquid capacitive proximity sensors CA18CLF08NAM1 ca18clf08nam CA18CLF08PA liquid capacitive proximity sensor CA18CLN12NA CA18CLF08NA
Capacitive Sensors

Abstract: tripleshield tm EC301 EC3025PPAPL PPAP ST37 liquid level sensor capacitive NPAPL plastic raw material industrial capacitive proximity sensor
Text: . Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & break switching EC 3016 NPAPL-1 EC 3025 NPAPL-1 EC 3016 , diameter operating dist. (Sn) 1) M30 M30 1) 16 mm 25 mm Ordering no. Transistor NPN /cable Make , sensing distance 16 mm flush mounted in metal or sensing distance 25 mm non-flush mounted. 4-wire DC , : 10-40 VDC Adjustable sensing distance 2-16 mm or 4-25 mm Output: DC 200 mA, NPN or PNP Make and break


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glass break sensor diagram

Abstract: tripleshield tm PPAP liquid level sensor capacitive 3025 capacitive proximity sensor P 67 BN ST37 EC3016PPAPL
Text: no. Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & break switching EC 3016 NPAPL-1 EC 3025 NPAPL , Mounting diameter operating dist. (Sn) 1) M30 M30 1) 16 mm 25 mm Ordering no. Transistor NPN , mm · Rated operational voltage: 10-40 VDC · Output: DC 200 mA, NPN or PNP · Make and break switching function · LED indication · High noise immunity · Flush and non-flush types · Plug and Cable


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1999 - CA18CLF08

Abstract: No abstract text available
Text: operating dist. (Sn) 1) M18 M18 8 mm 12 mm Ordering no. Transistor NPN /cable Make & break switching Flush (built-in) CA18CLF08NA Non-flush CA18CLN12NA Ordering no. Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & break switching CA18CLF08NAM1 CA18CLN12NAM1 CA18CLF08PA CA18CLN12PA , 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP • Make and


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PDF CA18CL. CA18CLF08
2013 - Not Available

Abstract: No abstract text available
Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available , Number 10396 Issue 1 Page 1 of 3 SILICON PLANAR NPN TRANSISTOR 2N3421 ELECTRICAL CHARACTERISTICS , Page 2 of 3 SILICON PLANAR NPN TRANSISTOR 2N3421 MECHANICAL DATA Dimensions in mm (inches , Voltage IC = 1A IB = 100mA IC = 2A IB = 200mA Base-Emitter Saturation Voltage IC = 1A


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PDF 2N3421 Ju0396 O-205AD)
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available , Number 10396 Issue 1 Page 1 of 3 SILICON PLANAR NPN TRANSISTOR 2N3421 ELECTRICAL CHARACTERISTICS , Page 2 of 3 SILICON PLANAR NPN TRANSISTOR 2N3421 MECHANICAL DATA Dimensions in mm (inches , Saturation Voltage IC = 1A IB = 100mA IC = 2A IB = 200mA Base-Emitter Saturation Voltage


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PDF 2N3421 Junc0396 O-205AD)
CA18CLF08NAM1

Abstract: CA18CLF08PAM1 CA18CLN12PAM1 CA18CLN12PA CA18CLN12 CA18CLF08PA NPN Transistor 1A metal switching CA18CLN12NAM1 CA18CLF08NA CA18CLN12NAM
Text: ) M18 M18 8 mm 12 mm Ordering no. Transistor NPN /cable Make & break switching Flush (built-in) CA18CLF08NA Non-flush CA18CLN12NA Ordering no. Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & , Rated operational voltage: 10-40 VDC · Output: DC 200 mA, NPN or PNP · Make and break switching , metal or sensing distance 12 mm nonflush mounted. 4-wire DC output with both make (NO) and Ordering


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PDF CA18CLN CA18CLF08NAM1 CA18CLF08PAM1 CA18CLN12PAM1 CA18CLN12PA CA18CLN12 CA18CLF08PA NPN Transistor 1A metal switching CA18CLN12NAM1 CA18CLF08NA CA18CLN12NAM
2003 - TEA15xx-series

Abstract: laptop inverter ccfl low noise transistors bc638 TV power transistor datasheet power transistor transistors equivalents AN10117-01 Royer oscillator PNP SOT89 Schottky Diode SC-62 laptop motherboard resistors
Text: 2 A*) NPN 210 mV @ 2 A*) PNP 1A 60 V / 100 V 0.4 W*) 250 mV @ 1 A*) NPN 330 mV @ 1 A , incorporates a switching regulator (e.g. LT1186F, UCC3972) to drive the two transistor push-pull stage , (BISS) transistor and NPN RET PNP General purpose transistor and NPN RET PBLS1502V / PBLS1503V , : power supply, power managment, DC/DC converter, BISS transistor , MEGA Schottky rectifier, Low VCEsat , metal , die attach and bond wires were minimised. As a result the collector-emitter saturation voltage


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PDF AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 TV power transistor datasheet power transistor transistors equivalents AN10117-01 Royer oscillator PNP SOT89 Schottky Diode SC-62 laptop motherboard resistors
2015 - 2N3055L-T30-Y

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ï , of 3 QW-R205-003.B 2N3055 NPN SILICON TRANSISTOR UTC assumes no responsibility for , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN


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PDF 2N3055 2N3055 2N3055L-T30-Y QW-R205-003 2N3055L-T30-Y
Capacitive Sensors

Abstract: tripleshield tm ST37 steel 3025 PPA 3025 carlo gavazzi St ST37
Text: ) M30 M30 1) 16 mm 25 mm Ordering no. Transistor NPN /cable Make & break switching Flush (built-in) EC 3016 NPASL Non-flush EC 3025 NPASL Ordering no. Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP , distance 2-16 mmor 4-25 mm · Output: DC 200 mA, NPN or PNP · Make and break switching function · LED , (NO) and Ordering Key break (NC) switching . M30 stainless steel housing with 2 m PVC cable or


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EQ502

Abstract: EQ-502T IP-67 eq-501 EQ-501T 502 variable resistance DC-4W IP67-IP67 c 3281 transistor
Text: direct switching of a load up to 3A 250VAC (resistive) or 3A 30VDC (resistive). DC-Voltage Type q Powered by 12-24 VDC q NPN and PNP transistor outputs are used. q Equipped with Background and , Relay contact 1a · Switching capacity: 250 V AC 3 A (resistive load) 30 V DC 3 A (resistive load) · , ) Output operation 45 mA or less NPN open-collector transistor · Maximum sink current: 100 mA · , , Adjustable Range Light-ON/DarkRelay Contact 1a ON Infrared LED 2500 98.4 EQ


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PDF EQ-500 IP-67 24-240VAC 12-240VDC. EQ502 EQ-502T eq-501 EQ-501T 502 variable resistance DC-4W IP67-IP67 c 3281 transistor
2000 - BU326A

Abstract: BU326
Text: BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: s POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. 1 2 TO-3 INTERNAL SCHEMATIC , A V CC = 250 V ts Storage Time I C = 2.5 A I B2 = - 1A A IB1 = 0.5 A V CC = 250 V


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PDF BU326A BU326A BU326
2000 - BU326A

Abstract: BU326
Text: BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. 1 2 TO-3 INTERNAL , V CC = 250 V ts Storage Time I C = 2.5 A I B2 = - 1A A IB1 = 0.5 A V CC = 250 V 3.5


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PDF BU326A BU326A BU326
1997 - BU326A

Abstract: BU326
Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. TO-3 INTERNAL SCHEMATIC , I C = 2.5 A I B2 = - 1A A I B1 = 0.5 A V CC = 250 V 3.5 µs I C = 2.5 A I B2 = - 1A A


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PDF BU326A BU326A BU326
2012 - 2N3772

Abstract: 2N3772G
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTORS DESCRIPTION SILICON NPN TRANSISTOR The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 TO-3 ORDERING INFORMATION , -002,Ba 2N3772 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25, unless otherwise , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002 2N3772G
1997 - IGBT SCHEMATIC

Abstract: motorola scr cross reference BJT npn motorola power BJT PNP mosfet base induction heat circuit MGW20N60D BJT characteristics BJT isolated Base Drive circuit GATE ASSISTED TURN-OFF THYRISTORS Drive Base BJT
Text: current density comparable to a bipolar transistor while switching much faster. IGBTs are replacing , Gate Bipolar Transistor (IGBT) Cell GATE SOURCE KEY METAL SiO2 POLYSILICON GATE N+ P , transistor . The NPN will be less likely to attain a VBE high enough to turn the device on and cause a , voltage, current, switching speed, drive circuitry, load, and temperature effects. There are a variety of solid state switch technologies available to perform switching functions; however, all have strong and


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PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference BJT npn motorola power BJT PNP mosfet base induction heat circuit MGW20N60D BJT characteristics BJT isolated Base Drive circuit GATE ASSISTED TURN-OFF THYRISTORS Drive Base BJT
2004 - transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 TPC6D02 Bjt 60 w 600v .5A pnp transistor 800v VS6 SOT23 npn 400V switching transistor sot-23 MSTM TOSHIBA
Text: . PNP 0.14V Max. High High Speed Speed Super High speed Switching NPN tstg 280ns typical DC , Dec DP0540001_02 23/29 Switching Switching of of 800V 800V series series Transistor Transistor 2SC5353 "M" company "F" company 2003 Dec DP0540001_02 24/29 NPN , Switching Switching Bip Bip Transistor Transistor For AC200V Maximum Ratings DC Characteristics , Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division


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PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 TPC6D02 Bjt 60 w 600v .5A pnp transistor 800v VS6 SOT23 npn 400V switching transistor sot-23 MSTM TOSHIBA
EC 3016 LEVEL SENSOR

Abstract: NPAPL NPN Transistor 1A metal switching 3025xPAPL
Text: . Transistor NPN /plug Make & break switching Ordering no. Transistor PNP/cable Make & break switching Ordering no. Transistor PNP/plug Make & break switching EC 3016 NPAPL-1 EC 3025 NPAPL-1 EC 3016 , diameter operating dist. (Sn) 1) M30 M30 1) 16 mm 25 mm Ordering no. Transistor NPN /cable Make , sensing distance 16 mm flush mounted in metal or sensing distance 25 mm non-flush mounted. 4-wire DC , : 10-40 VDC Adjustable sensing distance 2-16 mm or 4-25 mm Output: DC 200 mA, NPN or PNP Make and break


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PDF M12x1 3016xPAPL 3025xPAPL EC 3016 LEVEL SENSOR NPAPL NPN Transistor 1A metal switching
2004 - 2N3055

Abstract: 2N3055 NPN Transistor power transistor 2n3055 2N3055 silicon 2n3055 npn power transistor NPN Transistor 2n3055 2N3055 transistor 2N3055 transistor equivalent 2N3055 series voltage regulator 2N3055 power circuit
Text: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless , TECHNOLOGIES CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER SYMBOL , Ic= 1A ,VCE=4V,f=1kHz 15 Small-Signal Current Gain fHFE Ic= 1A ,VCE=4V 10 Cut-off Frequency F


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PDF 2N3055 2N3055 QW-R205-003 2N3055 NPN Transistor power transistor 2n3055 2N3055 silicon 2n3055 npn power transistor NPN Transistor 2n3055 2N3055 transistor 2N3055 transistor equivalent 2N3055 series voltage regulator 2N3055 power circuit
Not Available

Abstract: No abstract text available
Text: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators , V mA mA mA 70 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS MIN Base-Emitter On Voltage VBE(on) Ic=4A,VCE , Small-Signal Current Gain hFE Ic= 1A ,VCE=4V,f=1kHz 15 Small-Signal Current Gain fHFE Ic= 1A ,VCE=4V 10


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PDF 2N3055 2N3055 QW-R205-003
Not Available

Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor . • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS , : http://www.semelab-tt.com Document Number 3064 Issue 2 Page 1 of 3 NPN SILICON TRANSISTOR , Cut-Off Current VEB = 7V IC = 0 10 1A ICES Collector Cut-Off Current VCE = 90V IB


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PDF 2N3019 800mW 57mW/Â O-205AD)
2012 - Not Available

Abstract: No abstract text available
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2N3772 SILICON NPN TRANSISTOR SI LI CON N PN T RAN SI ST ORS ̈ DESCRI PT I ON The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications , NPN TRANSISTOR ABSOLU T E M AX I M U M RAT I N G (TA=25 , unless otherwise specified ) PARAMETER , 40 MHz 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR UTC assumes no


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002
2000 - difference between IGBT and MOSFET IN inverter

Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor mosfet base induction heat circuit DATA SHEET OF IGBT rectifier pwm igbt POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
Text: transistor while switching much faster. IGBTs are replacing MOSFETs in high voltage applications where , division of voltage across Rshorting and VBE of the NPN transistor . The NPN will be less likely to attain , minimal loss of efficiency. The choice involves considerations such as voltage, current, switching speed , available to perform switching functions; however, all have strong and weak points. ENTER THE IGBT By combining the low conduction loss of a BJT with the switching speed of a power MOSFET an optimal solid


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PDF AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor mosfet base induction heat circuit DATA SHEET OF IGBT rectifier pwm igbt POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
L723

Abstract: HA723 A723CD L723B1 A723 SGS-ATES L723T1 L723T2 A723C VC78
Text: ) 28939C FEATURES Positive or negative supply operation Series, shunt, switching or floating operation , without external pass transistor • CONNECTION DIAGRAM DESCRIPTION The L723 is a monolithic voltage , temperature compensated reference amplifier, error,amplifier, power series pass transistor and current limit circuitry. Additional NPN or PNP pass eiem&nt$ may be used when output currents exceeding 150mA are required , for use with positive or negative supplies as a series, shunt, switching or floating regulator


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PDF L723T2 HA723) 191C5E L723T1 HA723C-T0-I00) L723B1 A723C-DIP) 28939C 150mA L723 HA723 A723CD L723B1 A723 SGS-ATES L723T1 L723T2 A723C VC78
2004 - 2N3772

Abstract: No abstract text available
Text: UTC 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3772 is a power-base power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified , mA mA 60 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-002,A UTC 2N3772 SILICON NPN TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Saturation Voltage VCE(sat


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PDF 2N3772 2N3772 QW-R205-002
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