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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

NPN Transistor 10A 400V to3 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor d333

Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
Text: DT5335/6 are NPN double epitaxial devices conforming to JEDEC TO-3 /TO-204. They are high power, high , 500V VCEO(sus)min. 250V 400V 250V 400V ICMmax. 12A 12A 20A 20A hpEmin- at IC=5A,VCE=2V and Tcase=25°C 100 tr typ. 1'4(JS Outline and Dimensions JEDEC TO-3 /TQ-204 max mm. All dimensions in millimetres , 6A 6A I0A 10A •CM Peak collector current 12A 12A 20A . 20A Iß Continuous base current 2A Power , = 0 and Tcase=250C hpE D.C. current gain ic=5A, Vce=2V and Tcase=250C ic= 10A , Vce=2V and Tcase


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PDF uu164 G7G13 00-500V T4335 DT4336 DT5335 DT5336 DT4335/6 DT5335/6 O-3/TO-204. transistor d333 TRANSISTOR BC 384 mercury wetted relay, double contact npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
transistor mj10005

Abstract: darlington 1A 500v NPN Transistor 10A 400V to3 D 1398 Transistor H0845 TRANSISTOR BIPOLAR 400V 20A vce 500v NPN Transistor transistor 388 MJ10005 npn darlington 500v 2a
Text: - MOTOR CONTROLS Description: SWITCHMODE SERIES TO-3 NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE. The MJ10005 darlington transistor is designed for high voltage, high speed, power , TITLE: Transistor , Power Swtching, High Voltage, Bipolar, TO-3 , NPN SIZE A DWG. NO. MJ10005 SCALE , Collector-Emitter Voltage, VCE0 = 400V — Emitter—Base Voltage, VEB0 = 8V — Continuous Collector Current, Ic , Temperature Range, Tstg = —65° to +200°C 3 Collector 2 Base NPN 1 Emitter Electrical Characteristics


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PDF MJ10005 MJ10005 H0845 transistor mj10005 darlington 1A 500v NPN Transistor 10A 400V to3 D 1398 Transistor TRANSISTOR BIPOLAR 400V 20A vce 500v NPN Transistor transistor 388 npn darlington 500v 2a
Not Available

Abstract: No abstract text available
Text: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching , ://www.semelab-tt.com Document Number 9782 Issue 2 Page 2 of 3 SILICON NPN POWER SWITCHING TRANSISTOR BUX45X , °C Junction Temperature Range Storage Temperature Range 500V 500V 500V 7V 5A 7A 1.0A 120W 0.959W , : sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9782 Issue 2 Page 1 of 3 SILICON NPN


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PDF BUX45X O-204AA)
Not Available

Abstract: No abstract text available
Text: SILICON POWER NPN TRANSISTOR 2N6673 • High Voltage • Hermetic Low Profile TO3 Metal , POWER NPN TRANSISTOR 2N6673 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols , Temperature Range Storage Temperature Range 650V 650V 400V 8V 8A 4A 6W 0.0343 W/°C 150W 0.857 W , 1.0A (1) Base-Emitter Saturation Voltage mA - 1.0 TA = 125°C 2 IC = 8A VBE(sat) Units V IC = 1.0A (1) VCE = 650V Min. IB = 4A 2 IC = 5A IB = 1.0A


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PDF 2N6673 O-204AA)
2012 - 2n6673

Abstract: NPN Transistor 10A 400V to3 9396
Text: SILICON POWER NPN TRANSISTOR 2N6673 · · · · High Voltage Hermetic Low Profile TO3 Metal Package , NPN TRANSISTOR 2N6673 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR , ://www.semelab-tt.com Document Number 9396 Issue 1 Page 2 of 3 SILICON POWER NPN TRANSISTOR 2N6673 MECHANICAL , Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 650V 650V 400V 8V 8A 4A , Conditions IC = 200mA VCE = 650V VBE = -1.5V TA = 125°C VCB = 650V VEB = -8V IC = 1.0A IE = 0 IC = 0 VCE =3V


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PDF 2N6673 O-204AA) 2n6673 NPN Transistor 10A 400V to3 9396
2009 - NPN Transistor 50A 400V

Abstract: BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 · Low VCE(SAT), Fast switching. · Hermetic TO3 Metal package. · Ideally suited for Motor Control, Switching and Linear Applications · , Number 8314 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 ELECTRICAL , ://www.semelab-tt.com Document Number 8314 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 , Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 400V 250V 10V


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PDF BUP53 O-204AE) NPN Transistor 50A 400V BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
2012 - NPN Transistor 500V to3

Abstract: NPN Transistor 10A 400V to3
Text: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X · · · High Voltage, High Power, Fast Switching. Hermetic Metal TO3 Package. Ideally suited for Motor Control and Power Switching Circuits Screening Options , 50mA VCE = 400V VCE = 500V IB = 0 IC = 0 IB = 0 VBE = -1.5V TC = 125°C VEB = -5V IC = 1.0A IC = 2.0A IC , Document Number 9782 Issue 2 Page 2 of 3 SILICON NPN POWER SWITCHING TRANSISTOR BUX45X MECHANICAL DATA , 500V 500V 7V 5A 7A 1.0A 120W 0.959W/°C -65 to +150°C -65 to +150°C THERMAL PROPERTIES Symbols RJC


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PDF BUX45X O-204AA) NPN Transistor 500V to3 NPN Transistor 10A 400V to3
2N5157

Abstract: 2N3440
Text: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY , TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR "electrical characteristics at 25°C case temperature , registered data 2-3I60 Texas Instruments TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR PARAMETER , 2-361 TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO COLLECTOR , )°f°-3Vatlc = 3.5A • Typ fy of 5 MHz at 12 V, 0.2 A * mechanical data ALL JE DEC TO-3 DIMENSIONS


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PDF 2N5157 2N5157 2N3440
Not Available

Abstract: No abstract text available
Text: ) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V (Min) • High Switching Speed APPLICATIONS • Designed , M J13333 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise , PARAMETER 3. COLLECTOR (CASE) 2 VALUE TO-3 package UNIT VCEV Collector-Emitter Voltage , lc= 20A; IB=6.7A Base-Emitter Saturation Voltage I C = 10A ;I B =2A lc= 10A ;lB=2A,Tc=10


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PDF J13333 COLLE00V
70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: 70400013 NPN DARLINGTON A63 MPS-A63 MPS-A63 70400063 PNP DARLINGTON 1815 2SC1815 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , transistors. Example: 70484200 = Transistor / NPN /4 amps/200 volt. CATEGORY/POLARITY/IC VALUE/BVCEO VALUE 704 , SEMI-CONDUCTOR/ TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE


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PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
NPN Transistor 15A 400V to3

Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
Text: »JC >300V 350V >5V 10MHz <400pF < 1.0 °C/W >350V 400V >5V 10MHz < 400pF 400V 450V >5V 10MHz , ipm)m NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER Base: .0155" x .079" (0.39mm x 2.01mm) Emitter: .016" x 0.0565 , characteristics apply for a completely finished component employing the chip number 105 in a TO-3 or equivalent case: VCEO VCE(s) @ ic IB hps @ ic VCE >300V <1V 5A 0.5A >5 15A 5V >350V <1V 5 A 0.5A >5 15A 5V > 400V


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PDF 305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C
JAN2N3846

Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
Text: * > 400V <1.0V 10A 1.0A > 5 20A 5V VCEO VCEX vebo fT Cobo » JC > 80V 150V >10V 12MHz <600pF < 1.0 °C/W , <600pF < 1.0 °C/W >300V 350V > 10V 12MHz <600pF < 1.0 °C/W > 400V 450V >10V 12MHz ' < 600pF < 1 .o°c/w , : .0156" * .060" (0.40mm x 1.52mm) .016" x .056" (0.41mm x 1.42mm) NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 14) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold , characteristics apply for a completely finished component employing the chip number 114 in a TO-3 or equivalent


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PDF 305mm) JAN2N3846 JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
NPN Transistor 600V

Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
Text: component employing the chip number 142 in a TO-3 or equivalent case: VCEO VCE(s) @ Ic IB hfE @ ic VCE >200V <0.5V 1.0A 0.1A >10 3A 5V >300V <0.5V 1.0A 0.1A >10 3A 5V > 400V <0.5V 1.0A 0.1A >10 3A 5V VcEO , > 400V 700V >20V 2.5MHz <140pF < 1.0Â °C/W TYPICAL DEVICE TYPES: JAN2N3902, JAN2N5157, SDT401, SDT430 , NUMBER dH Base: Emitter: .045" X .047" (1.14mm x 1:2mm) .015" x .119" (0.38mm x 3.02mm) NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 42) CONTACT METALLIZATION Base and emitter: > 30,000 A


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PDF 203mm) toN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468 NPN Transistor 600V 2N5466 JAN2N3902 JAN2N5157 SDT401 SDT430
solitrondevices

Abstract: Solitron transistor c47
Text: component employing the chip number 114 in a TO-3 or equivalent case: VCEO > 80V >100V >130V * > 200V * > 300V *> 400V VCE(s) <0.5V <0.5V <0.5V <0.5V <0.5V <1.0V @ ic 15A 15A 15A 10A 10A 10A Iß 1.5A 1.5A 1.5A 1.0A 1.0A 1.0A hFE >20 >20 >20 > 5 > 5 > 5 @ ic 20A 20A 20A 20A 20A 20A VCE 5V 5V 5V 5V 5V 5V VCEO , 000S037 1 |"~ M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER Devices, inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 14) CONTACT METALLIZATION Base and emitter: > 50,000 A


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PDF 000S037 305mm) solitrondevices Solitron transistor c47
200V transistor npn 20a

Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
Text: VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and , 114 in a TO-3 or equivalent case: v CEO v CE(s) < 0 .5 V < 0 .5 V < 0 .5 V < 0 .5 V < 0 .5 V < 1 ,0V @ ·c 15A 15A 15A 10A 10A 10A @ >20 >20 >20 > 5 > 5 > 5 > 80V >100V > 130V > 200V > 300V > 400V 1.5A 1.5A 1.5A 1.0A 1.0A 1.0A 20A 20A 20A 20A 20A 20A c o LU Li_ -C VCEO , .0° C / W < 1 .0° C / W < 1 .0° C / W > 80V >100V > 130V >200V >300V > 400V > 10V > 10V > 10V


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PDF 99mml 600pF 600pF SDT14305, 2N3846, SDT14414, 200V transistor npn 20a Transistor 200V 20A 2N3846 200V transistor npn 10a
2008 - BUY69A

Abstract: BUY69 NPN Transistor VCEO 1000V
Text: Number Table Description Part Number Transistor , NPN , TO-3 BUY69A Disclaimer This data sheet , sustaining voltage - 100mA. · VCEO (sus) = 400V (minimum). · Optimum drive condition curves. TO-3 , 3.88 4.36 K 10.67 NPN BUY69A 12.19 E Pin 1. Base 2. Emitter Collector (Case) Dimensions 11.18 10 Ampere Silicon Power Transistors 200 - 400 Volts 100 Watts TO-3 , IB1 = -IB2 = 1.0A ts - 1.8 - tf - 1.0 On Characteristics (1) DC Current Gain


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PDF 100mA. BUY69A BUY69A BUY69 NPN Transistor VCEO 1000V
NPN Transistor 1.0A 400V

Abstract: No abstract text available
Text: completely finished component employing the element number 142 in a TO-3 or equivalent case: v C E0 >200V >300V > 400V v C E(s) < 0 .5 V < 0 .5 V < 0 .5 V @ ·c 1.0A 1.0A 1.0A !b 0.1A 0.1 A 0.1A hpE @ >10 >10 >10 'c 3A 3A 3A V CE 5V 5V 5V v C E0 >200V >300V > 400V V C ES 500V 600V 700V , |fi3bflbD2 ODDESbfl D |~!LEMENT NUMBER VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > Collector: Gold (Chrome Silver also


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PDF 35mmx7 140pF 140pF NPN Transistor 1.0A 400V
2004 - NPN Transistor 15A 400V to3

Abstract: 400V 10A 50w darlington NPN transistor BUX37 npn darlington 400v 15a transistor 2515
Text: SEME BUX37 LAB MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE SILICON NPN DARLINGTON POWER TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 , circuits. TO­204AA ( TO­3 ) PIN 1 - Base, PIN 2 - Emitter, Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector ­ Emitter Voltage 400V IC , VCE = 400V IB = 0 250 µA TC = 125°C 2.0 mA VCE(sat)* Collector ­ Emitter


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PDF BUX37 204AA NPN Transistor 15A 400V to3 400V 10A 50w darlington NPN transistor BUX37 npn darlington 400v 15a transistor 2515
20-nsec

Abstract: Tf 227 10A
Text: 50nsec Conditions: VCC = 400V , lc = 10A , · C 2R® For High Voltage Surface Stabilization Rugged , ^ 2^* Semiconductor Industries, Inc. A General NPN TRAN SISTO R CHIP " 35 2 " DIODE & TRANSISTOR CHIPS 15 AMP Bonding Pad Areas Base (1 )1 7 2 x 2 3 .7 mils Emitter (1 )1 5 7 .5 x 26 mils Ultra Fast Switching Typical Switching ( TO-3 Package) Front Metallization , Ic = 10A ,V c£ =5.0V lc = 10A , lß = 2.0A Min 550* 450 8.0 Max Unit Volts Volts Volts


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PDF 20nsec 90nsec 800nsec 50nsec 20-nsec Tf 227 10A
2004 - BUX80

Abstract: 928 transistor NPN Transistor 50A 400V
Text: ) Package Type Part Number 10 400 800 1.5 0.5 100 TO-3 NPN BUX80 Page 4 , BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage , Collector-Emitter Sustaining VoltageVCEO(sus) = 400V (Minimum). · Low Collector-Emitter Saturation VoltageVCE(sat) = 1.5V (Maximum) at IC = 5A, IB = 2.5A. NPN Dimensions 39.96 19.28 22.23 Power C 7.96 9.28 Transistor D 11.18 12.19 400 Volts E 25.20 26.67 F


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PDF BUX80 BUX80 928 transistor NPN Transistor 50A 400V
2004 - power switching 10 amp 60V

Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor , designed for automotive ignition, switching regulator and motor applications. Features: · Continuous Collector Current - IC = 10A . · Collector-Emitter Sustaining Voltage VCEO(sus) = 400V (Minimum). · Automotive Function Test. NPN MJ10012 10 Ampere Power Darlington Transistor , = 10 (A) Package Type Part Number 10 80 20 TO-3 NPN MJ10012 Page 5


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PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
transistor ah

Abstract: 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor
Text: TYPE 2N5241 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD £ND REVERSE ENERGY , publication. Texas Instruments 2-365 TYPE 2N5241 N-P-N SILICON POWER TRANSISTOR "electrical , . *JEDEC registered data 2 364 Texas Instruments TYPE 2N5241 N-P-N SILICON POWER TRANSISTOR a?h , N-P-N SILICON POWER TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT TYPICAL , at lc = 5 A Typ fT of 5 MHz at 12 V, 0.2 A 'mechanical data ALL JEDEC TO-3 DIMENSIONS AND NOTES ARE


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PDF 2N5241 transistor ah 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor
JAN2N5157

Abstract: 2N54
Text: Devices, Inc. ¿1 NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR (FORMERLY 42) CONTACT METALLIZATION , characteristics apply for a completely finished component em ploying the chip num ber 142 in a TO-3 or equivalent ca s e : VCEO >200V >300V > 400V VCE(s) < 0 .5 V < 0 .5 V < 0 .5 V @ ic 1.0A 1.0A 1.0A IB 0.1A 0.1A 0.1A hFE >10 >10 >10 @ ic 3A 3A 3A VCE 5V 5V 5V VCEO >200V >300V > 400V VCEX 500V 600V 700V


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PDF
triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: -5 100V; TO-5 200V; TO-5 300V; TO-5 400V ; TO-5 TRANSISTOR 2N2150 2N2151, J, JTX NPN ; 2.0A; 80V , l.OA; 200V 1.0A ; 400V l.OA; 600V l.OA; 800V 0.75A; 200V 0.75A; 400V 0.75A; 600V 73 73 73 73 , ; TO-5 300V; TO-5 400V ; TO-5 25V; TO-5 50V; TO-5 100V; TO-5 150V; TO-5 200V; TO-5 TRANSISTOR , ; 5.0A; 80V; TO-59 NPN ; 5.0A; 80V; TO-59 NPN ; 1.0A ; 80V; TO-5 NPN ; 1.0A ; 100V; TO-5 NPN ; 30.OA; 80V; TO-63 NPN ; 30.OA; 100V; TO-63 NPN ; 10.0A; 100V; TO-3 NPN ; 3.0A; 80V; TO-111 NPN ; 3.0A; 80V; TO


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PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
RCA 40408 transistor

Abstract: RCA 40409 transistor rca 40409 rca 40361 transistor rca 40361 RCA transistor 40409 RCA 40309 40361 rca 40409 Transistor rca 40314 data
Text: ) - - 400V IC - —2A (TC-66) 870 High-Speed N-P-N 'c = P-N-P 1 A N-P-N P-N-P 2N3053 VCER(SUSI -50 V , HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz , , , !c to 60 A .,. Pr to 140 W , (Radial) lc - 20 A max. f>t - 140 W max. (TO-31 PT " 175W max. ( TO-3 ) •c - 25 A max. Pt - 80-12SW max (TOO) lc = 30 A max. I»t-MOW max. (TO-31 ■c "50 A max. PT - 1«0 W max. (Modified TO-3 ) 30 x 30a , ] 2N2102 [ N-P-N ] 2N4036 [P-N-P] 2N5320 [ N-P-N ] 2N5322 [P-N-P] F 2N6178 [ N-P-N ] Nnily Designation 2N6180


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PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40408 transistor RCA 40409 transistor rca 40409 rca 40361 transistor rca 40361 RCA transistor 40409 RCA 40309 40361 rca 40409 Transistor rca 40314 data
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