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Part Manufacturer Description Datasheet Download Buy Part
LTC6101HVBIS5#TR Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 85°C
LTC6101AHS5#TRMPBF Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C
LTC6101BIS5#TRMPBF Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 85°C
LTC6101HVACS5#TRMPBF Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C
LTC6101HVBCS5#TRMPBF Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C
LTC6101HVCIS5#TRMPBF Linear Technology LTC6101 - High Voltage, High-Side Current Sense Amplifier in SOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 85°C

NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
l55a

Abstract: UL55A G535A L54B g435 G536a GB72A G335A UL-55 BUP46
Text: e Types G135 FAMILY OF HIGH CURRENT, FAST SWITCHING, VERY LOW SATURATION NPN POWER TRANSISTORS , LOW SATURATION NPN POWER TRANSISTORS DIE CHARACTERISTICS G536A G636A G736A G336A G436A G236A U n its , HIGH CURRENT, FAST SWITCHING, VERY LOW SATURATION NPN POWER TRANSISTORS DIE CHARACTERISTICS G537A , TRANSISTORS Power M anagem ent Division G172 FAMILY OF HIGH ENERGY, FAST SWITCHING, NPN BI-POLAR , /Ni/Ag G175 FAMILY OF HIGH ENERGY, FAST SWITCHING, NPN BI-POLAR TRANSISTORS DIE CHARACTERISTICS


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PDF UL55B UL54B UL54A G577A G677A GC77A UL55A l55a G535A L54B g435 G536a GB72A G335A UL-55 BUP46
Not Available

Abstract: No abstract text available
Text: discrete transistors and 1 dual operational amplifier. FEATURES · Large Output Current : Io UT=1-5A (MAX , ] O U TA 17 ] VCC1 16 ] IN1H 15 ] V CC2 14 ] VCC2 13 ] O U T 1 1 961001EBA2 # TO SH IBA is continually w orking to Improve the quality and the reliability of its products. Nevertheless, semiconductor devices In general can m alfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It Is the responsibility of the buyer, w hen utilizing T O SH IBA products, to


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PDF TA8461F TA8461F SSOP24 OUT22 OUT12 961001EBA2 SSOP24-P-300-1
2006 - DTC115GKA

Abstract: DTC115GUA T106 T146
Text: DTC115GUA / DTC115GKA Transistors 100mA / 50V Digital transistors (with built-in resistor , isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy. 3 , ) Collector Each lead has same dimensions Abbreviated symbol : K29 DTC115GKA 2.9 Structure NPN , =25°C) Parameter Collector-base voltage Collector-emitter voltag Emitter-base voltage Collector current


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PDF DTC115GUA DTC115GKA 100mA DTC115GUA SC-70 DTC115GKA T106 T146
Not Available

Abstract: No abstract text available
Text: DTC115GUA / DTC115GKA Transistors 100mA / 50V Digital transistors (with built-in resistor , isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy. 3 , ) Collector Each lead has same dimensions Abbreviated symbol : K29 DTC115GKA 2.9 Structure NPN , =25°C) Parameter Collector-base voltage Collector-emitter voltag Emitter-base voltage Collector current


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PDF DTC115GUA DTC115GKA 100mA DTC115GUA SC-70
2n731

Abstract: 2N718 2n1413 2n697
Text: TYPES 2M6ifo. ¿Wise* 8. 2N730, 2N731, 7N9S6 :^ v i? n 2N1613. 2NT711 N-P-N SILICON TRANSISTORS / . , . 2N731 N-P-N SILICON TRANSISTORS "electrical characteristics at 2 5 ° C fra *-air tem peratura (unless , , Switching and Oscillator Applications from <0.1 ma to >150 ma, dc to 30 me · High Voltage · Low Leakage · , , and 2N956 are in JEDEC TO -18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO -5 packages. D 'absolute maximum ratings a t 25°C free-alr temperature (unless


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PDF 2N730, 2N731, 2N1613. 2NT711 2N717, 2N718, 2N718A, 2N956 2n731 2N718 2n1413 2n697
MHQ3725

Abstract: D2072 MHQ3724
Text: DUAL-IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS . . . designed for high-current, high-speed , (sat) = 0-95 Vdc (Max) @ Ip = 1.0 Adc · DC Current Gain Specified - 100 m Adc to 1.0 A dc · Transistors S im ilar to 2N3724, 2N3725 · TO -116 Ceram ic Package - Com pact Size Com patible with IC Autom , Voltag e E m itter-Base Voltag e C o lle cto r Current - C o ntinu ou s Sym bol V C EO VCES Vc b veb MHQ3724, H, HX, HXV MHQ3725, H, HX, HXV CASE 632-08, STYLE 1 TO -116 TAJLAJ NPN 1 2 3 4 5 6 n


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PDF 00flt 2N3724, 2N3725 O-116 il-Std-750, MHQ3725 D2072 MHQ3724
BDXS3C

Abstract: bdx64
Text: . SPRINGFIELD, NEW JERSEY 07081 U.S.A. DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 PNP , COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 60 WATTS MAXIMUM RATINGS Symbol BDXS3 BDXS3A BDXS3B , W/°C Operating and Storage Junction TJ-TSTO Temperature Range TO -220 °C -65 to +150 THERMAL CHARACTERISTICS Ch airflctttriSuc Thermal Resistance Junction to Case Symbol Rejc Max , 3.90 Tc , NJ Semi-Conductors reserves the right to change test conditions, parameter limits and


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PDF BDX53 BDX54 BDX53A BDX54A BDX53B BDX54B BDX53C BDXS3C bdx64
AN-132

Abstract: OP-470
Text: and R4 are chosen to be 1 /gm of the NPN transistors to give a gain of unity in the input stage. C2 is , . The only nonlinear elements in the entire model are two NPN transistors which comprise the input stage , behavior, the model uses a differential pair of NPN transistors biased with a 1 mA current source (Figure 1 , voltage is clamped to within the specified voltag range. POLE STAGES In addition to the poles in the , example, 6 poles and 2 zeros are required to accurately model the OP-470, which this model can easily


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PDF AN-132 OP-470 OP-470, 155pF 260pF AN-132
transistor B502

Abstract: 2SD1760 2SB11
Text: : le (m A) CO LLE C TO R TO B A SE VOLTAG E : Vce (V) Fig.7 Collector-emitter saturation , Transistors Power Transistor (50V, 3A) 2 S D 1 7 6 0 / 2 S D 1 8 6 4 / 2 S D 1 7 6 2 ·F e a tu , 1185. ·S tru c tu re Epitaxial planar type NPN silicon transistor + l O© +j ±3-o ,i 0.5±0.1 6 , ) Emitter R O H M : T O -22 Û F P E IA J : S C -6 7 (96-214-D 57) 250 lUMffl Transistors ·A , : Item hFE P 8 2 -1 8 0 Q 1 2 0 -2 7 0 R 1 8 0 -3 9 0 noNfln 251 Transistors ·E le c tric a l


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PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760
UM02N

Abstract: umd2n
Text: Transistors Digital Transistor (Isolated Dual Digital Transistors ) UMD2N / IMD2A ·F e a tu re s 1) Two digital transistors , DTA124E and DTC124E, in the sam e size package as the UMT and SMT. 2) M ounting possible w ith UMT3 or SMT3 a u to m a tic m o u n tin g ma chines. 3) Transistor elements , tu re Epitaxial planar type NPN /PNP silicon transistor (Built-in resistor type) The following characteristics apply to both the DTn1 and DTn2, how ever, the sign on DTn2 values fo r the PNP type has been


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PDF DTA124E DTC124E, iort-20 31001C 50m-100m -500/i UM02N umd2n
Not Available

Abstract: No abstract text available
Text: n-p-n power transistors feature high-voltage capability, fast switching speeds, and low saturation , tu ra tio n voltag e as a fu n c tio n o f c o lle c to r c u rre n t fo r a ll types. 4 , rre n t fo r a ll types. Fig. 8 - T y p ic a l b a s e - to -e m itte r voltag e as a fu n c tio n o f c o lle c to r c u rre n t fo r a ll types. 2-189 POWER TRANSISTORS 2N6671, 2N6672 , a cita n c e c h a ra c te ris tic s as a fu n c tio n o f c o lle c to r-to -b a s e voltag e o r


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PDF 2N6671, 2N6672, 2N6673 -204A 2N6673* 2CM-3O450
Not Available

Abstract: No abstract text available
Text: – 43 02 57 1 0 0 4 0 ^ 0 2 TOI H H A S 25-A Silicon N-P-N Power Transistors -7 ^ 5 - - jq N-P-N Types for Power Supplies and Other High Voltage Switching Applications Features: ■Fast switching speed ■Low ^ce(saf) ■Steel hermetic TQ-204AA package RCA6340 and RCA6341 silicon n-p-n power transistors which feature fast switching speeds, low saturation voltage, and high , , high-speed transistors are 100-percent tested for parameters that are essential to the design of high-power


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PDF RCA6340, RCA6341 TQ-204AA RCA6340 RCA6341 100-pe 43G2271
Not Available

Abstract: No abstract text available
Text: of four NPN transistors with a 8P5 lO k il series input resistor, connected to form dual 2-parallel output drivers. All emitters of transistors are connected together to pin 2. The substrate is connected to pin 5 and pin 5 must be tied to the most negative point in the external circuit. The drivers are , PIN CONFIGURATION (TOP VIEW) The M54512L, 4-channel sink driver, consists of four NPN transistors , » - [T E FEATURES Output sustaining voltage to 20V • 50mA output sink current


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PDF b24Tfl27 M54512L M54512L, 54512L
BUY69C

Abstract: No abstract text available
Text: S J E D E C TO -2Q4AA The RCA-BUY69 series of silicon n-p-n power transistors feature , Power Transistors 1237 BUY69A, BUY69B, BUY69C High Voltage Silicon N-P-N Power Transistors F o , ) - A #2C1. , 04T Fig. 6 - T y p ic a l b a s e - to -e m itte r voltag e as a fu n c tio n o f , . The RCA-BUY69 series transistors are supplied in steel JEDEC TQ-204AA hermetic packages. MAXIMUM , . Tl -65 to 200 At distance > 1/16 In. (1.58 mm) from seating plane for 10 s max


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PDF D017bBfi BUY69A, BUY69B, BUY69C 00-1000V RCA-BUY69 D17b31 BUY69C
9141a

Abstract: 9141B 2n6740 30458 30458 02 LA SERIES
Text: 6 7 4 0 * S w itc h M a x series of silicon n-p-n pow er transistors feature h igh-voltag e , a ll types. Fig. 7 - T y p ic a l b a s e - to -e m itte r voltag e as a fu n c tio n o f c o lle , c ita n c e c h a ra c te ris tic s as a fu n c tio n o f c o lle c to r-to -b a s e voltag e o r e , 2N6738, 2N6739, 2N6740 F ile N u m b e r 1291 5-A S w it c h M a Power Transistors jf TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage


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PDF 2N6738, 2N6739, 2N6740 lo738, 001/tF; 9141a 9141B 2n6740 30458 30458 02 LA SERIES
RCA 40408

Abstract: RCA-40406 rca 40411 40408 npn 40411 rca 40407 rca 40406 40406 40411 224Z
Text: dissipation rating RCA-40406, 40407, 40408 and the 40411 are silicon n-p-n and p-n-p transistors intended fo r , . - 150 -6 5 to + 2 0 0 _ Power Transistors , 7 HIHAS 40406 , Power Transistors File Number 219 40406, 40407, 40408, 40411 HARRIS SEMICOND SECTOR S?E D M30S271 GG2Q103 5 H H A S T E R M IN A L D E S IG N A T IO N S Silicon N-P-N and P-N-P Power Transistors For A udio-A m plifier Applications Features: 40406 & 40407 V'ceo(sus) = -50 V max


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PDF M30S271 GG2Q103 RCA-40406, 15tput M3D2271 002D107 RCA 40408 RCA-40406 rca 40411 40408 npn 40411 rca 40407 rca 40406 40406 40411 224Z
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistors FEATURES · , broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon , safety precautions. After use, dispose of as chemical or special waste according to the regulations , Product specification NPN microwave power transistors LIMITING VALUES In accordance with the Absolute , 20 202 Philips Semiconductors Product specification NPN microwave power transistors


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PDF MX0912B100Y OT439A 100A101KP50X MX0912B100Y; MZ0912B100Y MGK067
md7002

Abstract: No abstract text available
Text: , NEW JERSEY 07081 U.S.A. MD7002 (SILICON) MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed tor use as differential amplifier;, dual , * Collector -B« Voltagt Emirar-Baia Voltag * Coltoctor-Cunini Oparating and Stcngi Junction Tamptratun , to Ambient 1 . S. 7. 1 . JPJM Thermal Refinance, Junction to Can If "liiiiTiu" 44 Junction 10 Junction to 84 44 * 11) R«JA ii maawnd with tha divioa loldarad into a


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PDF MD7002 MD7002A MD7002B 100/iAdc 100/jAdc IC-100jiAdc, -10Vdc) MD70O2A md7002
3096C

Abstract: No abstract text available
Text: tu re ( n-p-n ). Fig. 4 T ra n sisto r (n -p -n ) h p ^ a s a fu n c tio n o f c o lle c to r c u rre n , A T ) ( n-p-n ) as a fu n c tio n o f c o l le c to r cu rre n t. Fig. 8 - C o lle c to r c u t- o , tio n o f fre q u e n c y f o r n-p-n transistors . Fig. 18 - N oise as a fu n c tio n o f fre q u , p r o d u c t as a fu n c tio n o f c o lle c to r c u rre n t ( n-p-n ). Fig. 21 - C apacitance as a fu n c tio n o f bias voltag e ( n-p-n ). Fig. 2 2 - I n p u t resistance as a fu n c tio n o f


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PDF CA3096, CA3096A CA3096C A3096A 3096C CA3096 CA3096H
2SC3058

Abstract: No abstract text available
Text: ABSOLUTE M A X IM U M RATINGS R a tin g C o lle c to r to E m itte r Voltag e C o lle c to r to Base Vo , Base B rea kdo w n V o lta g e E m itte r to Base B rea kdo w n Voltag e C o lle c to r to E m itte r S , to r to E m itte r S a tu ra tio n Vo ltag e Base to E m itte r S a tu ra tio n Voltag e O u tp u t , Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran , current density. This structure permits the design of high power transistors w ith superior switching


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PDF 2SC3058 2SC3058
TA7323

Abstract: 2N5671 2N5872
Text: epitaxial silicon n-p-n transistors having high current and high power handling capability and fast switching speed. The 2NS672 is similar to the 2N5671 except that it has higher voltage ratings and lower , 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Military, industrial and Commercial Equipment , M IN A L D ESIGNATIONS JED EC TO -2Q4AA M A X IM U M R A TIN G S , A b s o lu te -M a x im u m


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PDF 2N5671, 2N5672 2N5671 2N5672* 2NS672 2NSS71 2NSS72. 2N5671S2N5672. TA7323 2N5872
bux33

Abstract: No abstract text available
Text: JEDEC TO -204AA (200 mil dlanwler pin Isolation) The BUX33 SwitchM ax series o f silicon n-p-n power , l c o lle c to r-to -e m itte r sa tu ra tio n voltag e fo r a ll types. 2-324 BUX33, BUX33A , File Num ber 1354 BUX33, BUX33A, BUX33B 8 - A S w I tc h M a X P o w e r T ra n s is to rs High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage Switching Applications , pulse-w idth-m odulated regulators. These high-voltage, high-speed transistors are 100-per-cent tested


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PDF BUX33, BUX33A, BUX33B TQ-204AA O-204AA BUX33 2N3762 A372S
M5271

Abstract: 5271L
Text: o f PNP and NPN transistors w ith clam p diode and it can be driven directly from 5V -typ e m , 5.0A and up to 20V can be applied as the o u tp u t voltage. CIRCUIT DIAGRAM LOW a c t iv e Input O utp ut L H L (O N ) H (O F F ) D R IV E , CLM, V q c , ar,d G ND are com m on to , , it is n ot necessary to attach it e xternally. U N IT , f i 9 - 56 A MITSUBISHI ELECTRIC , layout o f a PCB, you have to consider the thermal derating. To improve the heat radiation o f an 1C, add


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PDF 5271L M5271 5271L
Not Available

Abstract: No abstract text available
Text: transistors . The 2N6486, 2N6487, and 2N 6488 are n-p-n com plem ents of p-n-p types 2N6489, 2N6490, and 2N6491 , 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 File N um ber 678 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and , R V O L T A G E : * W ith 1.5 volts (V be) o f reverse bias, and external b a s e - to -e m itte r re s is ta n c e (R BE) = 100 0 . W ith e x te rn a l b a s e - to -e m itte r re s is ta n c


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PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491
RX1214

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistors FEATURES · , precautions. After use, dispose of as chemical or special waste according to the regulations applying at the , Philips Semiconductors Product specification NPN microwave power transistors LIMITING VALUES In , Philips Semiconductors Product specification NPN microwave power transistors THERMAL , specification NPN microwave power transistors RX1214B80W; RX1214B130Y 1997 Feb 14 321


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PDF RX1214B80W; RX1214B130Y RX1214B80W MGA258 RX1214
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