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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC3867EUF#TRPBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867EUF#PBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867IUF#PBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3867IUF#TRPBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
ISL29102IROZ-T7 Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C
ISL29102IROZ-T7A Intersil Corporation Low Power Ambient Light-to-Voltage Nonlinear Converter; ODFN6; Temp Range: -40° to 85°C

NONLINEAR MODEL LDMOS Datasheets Context Search

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transistor directory

Abstract: NONLINEAR MODEL LDMOS microwave office Gan transistor LDMOS
Text: , this library contains from Version V04p0 release onwards, a new basic model for the LDMOS models, which , from the NXP LDMOS Model Library version V03p0 and older, you have to replace the old models with new , "Open". The NXP LDMOS Model will be loaded into the new MWO project. b. To add the NXP LDMOS Model to an , "Add" button, then open "NXP_.ini". Press "OK" and the NXP LDMOS Model will be added to your , NXP RFpower Model Library Manual for Microwave Office Version 20120420 Contents · · · · · ·


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PDF V07p0) transistor directory NONLINEAR MODEL LDMOS microwave office Gan transistor LDMOS
1998 - NONLINEAR MODEL LDMOS

Abstract: No abstract text available
Text: hampered the industry from using simulation for non-linear designs. Polyfet RF Devices supplies Spice , analyzing non-linear behavior and efficiency. With today’s requirements in designing for digital radios , 350 S imulated 375 400 Slide 6 Steps for Spice Extraction DC Model . IV curve matching n AC model - Generate Power Dependent S parameters. n Final model - Device and Package Parasitics , order to generate Spice models Slide 7 DC Model n n n n Good to know Gate Length


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2007 - AN2657

Abstract: walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations
Text: AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large , how to extract the model parameters for the PD54003L-E device, which is a 3 W - 7.2 V - 500 MHz LDMOS , transistors. Recently, STMicroelectronics has been strongly focused on developing new models for RF LDMOS power transistors. The model introduced here is simple in concept, and describes with good , designers in developing their new applications. This model has been implemented in Agilent Advanced Design


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PDF AN2657 AN2657 walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations
2007 - gsm booster circuit

Abstract: mrf373al mrf9030n RF MODULATORS u880 MRF6S21140H MRF5S21045N mrfe6s9060 circuit booster gsm MW6IC2420NB
Text: transistors and RF ICs is a nonlinear model that examines both electrical and thermal phenomena and can , Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power , VDD Volts Gain (Typ)/Freq. dB/MHz Eff. TV Broadcast - LDMOS Power Transistors Product , Volts Gain (Typ)/Freq. dB/MHz Eff. Cellular - To 500 MHz - LDMOS Power Transistors Product , Gain (Typ)/Freq. dB/MHz Eff. Cellular - To 1000 MHz - LDMOS Power Transistors Product


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PDF SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al mrf9030n RF MODULATORS u880 MRF6S21140H MRF5S21045N mrfe6s9060 circuit booster gsm MW6IC2420NB
2002 - NONLINEAR MODEL LDMOS

Abstract: sweep generator MOTOROLA MRF19125 motorola amplifiers examples FET model AN1941
Text: model is an empirical large­signal, nonlinear model . The MET model can accurately represent the , LDMOS Model libraries, go to: http://www.motorola.com/rf/models NOTE: For better viewing on the Web , by AN1941/D AN1941 Modeling Thermal Effects in RF LDMOS Transistors Prepared by: Darin Wagner , model and MET (Motorola Electro Thermal) model . All examples contained within this application note are based on simulation results from Agilent EEsof EDA Advanced Design System (ADS). ROOT MODEL The


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PDF AN1941/D AN1941 MRF19125 NONLINEAR MODEL LDMOS sweep generator MOTOROLA motorola amplifiers examples FET model AN1941
HP RF TRANSISTOR GUIDE

Abstract: MRF286 MHL9838 MRF210305 High frequency MRF transistor motorola MRF Base Station Drivers mrf284 Curtice linear amplifier 470-860
Text: LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing small­signal, large­signal , subscribe, just fill out the RF LDMOS Transistor Model Subscription form on­line at http://www.motorola.com , , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice, "A New Dynamic Electro­Thermal Nonlinear Model


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PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MHL9838 MRF210305 High frequency MRF transistor motorola MRF Base Station Drivers mrf284 Curtice linear amplifier 470-860
2005 - stripline directional couplers

Abstract: MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
Text: voltage LDMOS technology (HV6), the new portfolio features a wide array of low-cost plastic devices and , performance benefits include higher operating efficiency (5 to 15 percent) than previous LDMOS generations , markets. Utilizing LDMOS , BiCMOS, GaAs and SMARTMOSt technologies, Freescale is committed to the , CONTROL RF TRANSISTORS RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of products


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PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
2005 - MMM6029

Abstract: MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
Text: voltage LDMOS technology (HV6), the new portfolio features a wide array of low-cost plastic devices and , efficiency (5 to 15 percent) than previous LDMOS generations, higher gain (1 to 2 dB) and improved backoff , markets. Utilizing LDMOS , GaAs, SiGe:C, RF CMOS and SMARTMOSt technologies, Freescale is committed to the , TRANSISTORS RF High Power LDMOS Transistors Freescale Semiconductor LDMOS technology is ideally suited for , , GSM EDGE, PCS, UMTS, and W-CDMA. With the unique LDMOS characteristics, these parts offer superior


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PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
2004 - TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module FM LDMOS freescale transistor linear amplifier 470-860 class AB hf bipolar amplifier mrf247
Text: 50 Ohms Low Cost PQFN 5x5 Package EXPANDED PORTFOLIO OF 6TH GENERATION (HV6) RF LDMOS DEVICES , wireless infrastructure and subscriber markets. Utilizing LDMOS , BiCMOS, GaAs and SMARTMOSt technologies , MC68HC908RF2/D SG1009-8 SG1009Q42004 RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of , cellular, GSM, TDMA and CDMA, digital television, GSM EDGE, PCS, UMTS, and W-CDMA. With the unique LDMOS


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PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module FM LDMOS freescale transistor linear amplifier 470-860 class AB hf bipolar amplifier mrf247
2003 - M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS MRF9210 motorola GPS receiver module fs oncore semiconductors cross index transistor m 9587 Motorola transistors MRF646
Text: LDMOS die technology and offers a 4 to 5 percentage point increase in efficiency over previous , LINE-UPS Examples include: With Motorola's new developments in RF LDMOS integrated power amplifiers , -3 What's New! (continued) SIXTH GENERATION RF LDMOS TECHNOLOGY SETS INDUSTRY STANDARDS WITH HIGHER PERFORMANCE AND EFFICIENCY Motorola's sixth generation (HV6) RF LDMOS technology offers unsurpassed quality , infrastructure and subscriber markets. Utilizing LDMOS , BiCMOS, GaAs and SMARTMOSt technologies, Motorola is


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PDF SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS MRF9210 motorola GPS receiver module fs oncore semiconductors cross index transistor m 9587 Motorola transistors MRF646
2003 - article.

Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
Text: . This simulation can be achieved by two methods. First the circuit uses a nonlinear model and nonlinear , nonlinear model and the data file agree, both simulations will yield the same measurement data. In the case of using a non-linear model with a nonlinear simulator, the simulation results are generally very close to actual amplifier performance. Nonlinear simulators provide gain compression, power output , matching networks for an LDMOS power amplifier that delivers consistent performance over more than a


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2012 - LK141

Abstract: 60W VHF TV RF amplifier
Text: RF Devices is a California based manufacturer of broadband LDMOS , VDMOS, and GaN power , €¢ • • • GaN transistors LDMOS transistors VDMOS transistors Broadband Modules Linear and non-linear models for simulation • 4 week lead times • Application notes • Custom , %, 48Vdc Polyfet LDMOS devices • Usable power/gain up to 1.5GHz • Output power up to 600W CW â , : 600W, 108MHz, 19dB, 50Vdc Linear and non-linear models • S-parameters for each device • Spice


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PDF ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier
LDMOS NONLINEAR

Abstract: AN3617 APP3617 DS1870 DS4303 DS4305 LDMOS LDMOS digital
Text: , DS4305, LDMOS , Power Amplifier, RF, Bias Sep 16, 2005 APPLICATION NOTE 3617 Using the DS4303 to Bias LDMOS RF Power Amps Abstract: LDMOS RF power amps dominate the GSM and CDMA base-station markets , performance with LDMOS amplifiers is compensating the gate bias voltage to maintain a constant quiescent current over temperature. Several solutions currently exist for biasing LDMOS RF power amps, including , amplifier. Figure 1. DS4303 functional diagram. DS4303 LDMOS Biasing Circuit The circuit in Figure 2


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PDF DS1870, DS4303, DS4305, DS4303 DS1870 DS4303. com/an3617 DS1870: DS4303: DS4305: LDMOS NONLINEAR AN3617 APP3617 DS4305 LDMOS LDMOS digital
2009 - gsm booster circuit

Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit MRF6VP11KH circuit booster gsm MC44BS373 MW6S004N
Text: Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power , Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. TV Broadcast - LDMOS Power , LDMOS Power Transistors Product Frequency Band(37) MHz JC MW6S004N U 1-2000 MW6S010N , Selector Guide. SG1009-2 SG1009Q22009 Cellular - To 1000 MHz - LDMOS Power Transistors Product , Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. General Purpose LDMOS Drivers


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PDF SG1009Q22009 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit MRF6VP11KH circuit booster gsm MC44BS373 MW6S004N
2009 - 48v, 20 amp lead acid battery charger circuit diagram

Abstract: radar using ultrasonic sensor schematic diagram 48v battery charger lead acid BLUERAY DSP LM35 sensor projects dvd writer laser diode Blue-ray laser circuit diagram LM34 ISL60002 AN1446
Text: compensation; poor initial accuracy; non-linear output voltage RTD Operate over a wide temperature range; requires signal conditioning circuits to obtain an output voltage; very accurate; non-linear resistance , signal conditioning circuits to obtain an output voltage; non-linear resistance vs temperature curve , temperature sensors exhibit a non-linear output response vs temperature which require complex linearizing , ranging from - 8.75 mA/ °C to + 8.75 mA/ °C (M = 0 to 255). RFPA LDMOS Bias LDMOS transistors are


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PDF ISL21400 AN1446 ISL21400? ISL21400, 48v, 20 amp lead acid battery charger circuit diagram radar using ultrasonic sensor schematic diagram 48v battery charger lead acid BLUERAY DSP LM35 sensor projects dvd writer laser diode Blue-ray laser circuit diagram LM34 ISL60002
volterra

Abstract: HBT 01 05G VOLTERRA SEMICONDUCTOR SOA gummel steam trap 31-0q AP603 AP602 WJ 60 transistor HBT transistor
Text: of a non-linear model which can predict for a particular load, which is the I, V trajectory. An , and LDMOS technologies in the range of 1W to 10W. A new series of high voltage HBT devices were , published results from other technologies. 2.0 HV InGaP HBT Technology 2.1 InGaP HBT vs. LDMOS , frequency power devices to address high linearity application. In the past, LDMOS has been the incumbent RF , of the future wireless communication systems, LDMOS is gradually running out of steam. InGaP HBT


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PDF AP60x 1-800-WJ1-4401 volterra HBT 01 05G VOLTERRA SEMICONDUCTOR SOA gummel steam trap 31-0q AP603 AP602 WJ 60 transistor HBT transistor
4-611 motorola

Abstract: digital predistortion dpd MW41C2230 predistorter APP4611 MAX2009 MAX2010 MRF21085 MRF5P21180
Text: difficult, if not impossible, to obtain for an RF amplifier. One can fully characterize the nonlinear , by a nonlinear transfer function represented by a Taylor expansion: VOUT = K0 + K1VIN + K2VIN² + , . Therefore, in most cases practical nonlinear amplifiers can be described to a sufficient accuracy using , products can become important in some cases. The higher K3, K5. become, the more nonlinear is the , package can take seconds, but the time constant for heating the channel of an LDMOS is in the range of


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PDF MAX2009/MAX2010 MAX2009: MAX2010: com/an4611 AN4611, APP4611, Appnote4611, 4-611 motorola digital predistortion dpd MW41C2230 predistorter APP4611 MAX2009 MAX2010 MRF21085 MRF5P21180
2009 - An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation AN-721 MOTOROLA small signal transistors smith
Text: performance. Figure 6 illustrates a model of a LDMOS power amplifier with plotted complex conjugate load , simple LDMOS model with indicated complex conjugate loads: Z0 = 5, RL = RS = 13, CS = 47.5 pF, LS = , dimensions. In this packaged 28V, 30W, LDMOS model RS Model = RL = 282 / 2 ( 30) = 13 For 900 MHz the , now offer a complete simulation toolset with non-linear synthesis and layout functions. When the , semiconductor device ( LDMOS ) load pull performance contours in Figure 5. The trajectory intersects several


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PDF AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation AN-721 MOTOROLA small signal transistors smith
2012 - 4G base station power amplifier

Abstract: No abstract text available
Text: LDMOS transistors intended for RF PAs, including multi-way symmetric and asymmetric Doherty amplifiers , amplifier topology Traditional LDMOS Doherty RF power amplifiers are based on the Class-AB linear mode , transmitter applications. A summary comparison of silicon LDMOS and GaN HEMT is shown in Table 1. Table 1. LDMOS and GaN HEMT Silicon LDMOS GaN HEMT epi homogeneous silicon heterogeneous GaN band , a subset of another amplifier topology known as LINC (LInear amplification using Nonlinear


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2011 - Large-Signal Characterization and Modeling of MOSFET for PA Applications

Abstract: NONLINEAR MODEL LDMOS
Text: [8] B. O hAnnaidh and T.J. Br razil, “An accurate nonlinear MOSFET model for intermodulation , €” This paper presents the large-signal model requirements and generation as well as the 1- and 2 , prediction for the 2-tone inter-modulation product up to the 5th order. Index Terms — MOSFET model , PSP model , largesignal modeling, non-linearity modeling I. INTRODUCTION The CMOS PA has attracted many , the MOSFET non-linear behavior at high frequencies, but their approach is either based on 1


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PDF RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS
LDU601C

Abstract: 600W TRANSISTOR AUDIO AMPLIFIER PTFA043002E M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER GR01790 600w power amplifier LDU60 470862MHz rf amplifier 100w
Text: LdMOS , this device allows the compensation of non-linear VGS compared to the change of temperature and , LDU601C 600W pep ­27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. · · · · · · · · · 470 - 862 MHz (28 ÷32 Volt) 30 , (See LDMOS Technology Note). (Warning: Do not exceed the specified max Iq value). *Depending of


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PDF LDU601C 27dBc PTFA043002E GR01790 LDU601C 600W TRANSISTOR AUDIO AMPLIFIER M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER GR01790 600w power amplifier LDU60 470862MHz rf amplifier 100w
2008 - power transistors table

Abstract: MHW6342TN MW6S010NR1 mrfe6s9060n "RF high power Amplifier" Motorola Microwave power Transistor MRF373 PUSH PULL MRF6P23190HR6 MRF6V2300N MRFG35010R1
Text: effects. The MET model for RF High Power transistors and RF ICs is a nonlinear model that examines both , . How to Use This Selector Guide The RF Low Power Components, LDMOS Power Transistors, GaAs Power , . . . . . 10 ISM Band - 2.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . 10 RF LDMOS , . . . . . . 13 General Purpose LDMOS Drivers -To 2100 MHz . . . . . . . . . . . . . . . . . . . . . , its RF High Power Model Library with MET and Root models. All product models available in the RF


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2010 - BLF578

Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X planar impedance transformer ATC800B471JT200X
Text: internal matching. NXP Semiconductors provides a non-linear simulation model of the BLF578 for use with , well with the non-linear model and the broadband performance of the device up to 500 MHz · The , Application note Document information Info Content Keywords BLF578, LDMOS , DVB, planar balun , required. The BLF578 is a 1200 W LDMOS power transistor for broadcast transmitter applications and , LDMOS RF transistor in a DVB-T broadcast application. However, another significant objective is to


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PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X planar impedance transformer ATC800B471JT200X
2010 - MRF8P9040N

Abstract: MRF1513NT1 s2p rf Amplifier mhz Doherty 470-860 MRF8S21100H MRF8S21100HS MRF8S9220HR3 MRF8S9170NR3 AN1643 MRF6P23190H MRF6VP3450HR6
Text: EEsof ADS nonlinear circuit simulator · AWR Microwave Office The RF High Power Model Library is , Guide RF Low Power Amplifiers, LDMOS Power Transistors, GaAs Power Transistors, Power Amplifier ICs , further grouped by generation of LDMOS where applicable. Applications Assistance Applications assistance , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 RF LDMOS Power , . 11 Cellular - To 1500 MHz . . . . . . . . . . . . . . . . . . . . . . 12 General Purpose LDMOS


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2004 - 7908 motorola

Abstract: sda 5708 34 AC LM35 CC 200w power AB amplifier circuit diagram 640E6 AMP 11392 200w power amplifier circuit diagram sensor LM35 BB 7358 AN1741
Text: ® LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil's LUT-based , Introduction LDMOS transistors are used for RF Power Amplification in numerous applications from , linearity is the DC biasing of the LDMOS transistor for optimal drain current for a given power output. This , circuit of an LDMOS amplifier bias circuit is shown in Figure 1. The DC Bias on these amplifiers is set by , constant over temperature, but since the Vgs of LDMOS amplifier devices varies with temperature, some type


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PDF AN174 7908 motorola sda 5708 34 AC LM35 CC 200w power AB amplifier circuit diagram 640E6 AMP 11392 200w power amplifier circuit diagram sensor LM35 BB 7358 AN1741
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