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ALS81G512NJ450 KEMET Corporation Aluminum Electrolytic Capacitor
ALS81U512NJ450 KEMET Corporation Aluminum Electrolytic Capacitor
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ALS71P622NJ450 KEMET Corporation ALU SCREW TERMINAL 6200UF 450V
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ALS71A622NJ450 KEMET Corporation Aluminum Electrolytic Capacitor
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ALS30A472NJ450 KEMET Corporation Newark element14 8 $71.81 $61.30
ALS30A472NJ450 KEMET Corporation Master Electronics 12 $81.71 $66.00
ALS30A472NJ450 KEMET Corporation Farnell element14 11 £80.08 £66.78
ALS30A472NJ450 KEMET Corporation element14 Asia-Pacific 8 $108.55 $90.18
ALS30A472NJ450 KEMET Corporation Allied Electronics & Automation 118 $70.37 $70.37
ALS30A472NJ450 KEMET Corporation Chip1Stop 48 $73.40 $56.70
ALS30A472NJ450 KEMET Corporation TME Electronic Components 4 $121.28 $83.80
ALS30A472NJ450 KEMET Corporation RS Components 81 £52.99 £43.98
ALS70A622NJ450 KEMET Corporation element14 Asia-Pacific - $78.73 $60.14
ALS70G622NJ450 KEMET Corporation Allied Electronics & Automation - $52.02 $52.02
ALS70P622NJ450 KEMET Corporation Allied Electronics & Automation - $52.02 $52.02
ALS71P622NJ450 KEMET Corporation Allied Electronics & Automation - $52.02 $52.02
ALS71U622NJ450 KEMET Corporation Allied Electronics & Automation - $52.02 $52.02
ALS80A512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS80C512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS80U512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS81G512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS81H512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS81P512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50
ALS81U512NJ450 KEMET Corporation Allied Electronics & Automation - $54.50 $54.50

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NJ450 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
U1898

Abstract: No abstract text available
Text: NJ26 NJ26 NJ450 NJ450 NJ450 - - - - - - - - - - - - - - , ] [-1 0 ] [-1 0 ] [-1 0 ] 25 30 30 50 50 NJ450 NJ132 NJ132 NJ132 NJ72 28 28 4.0


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PDF BF244C BF246A BF246B BF246C BF256A NJ132 NJ26L U1898
1999 - NJ450

Abstract: D45 TRANSISTOR IFN363 f36 transistor IFN147 IFN146 2SK363 J109 J110A J110
Text: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum , 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D , Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ450 Process , /13/99 2:09 PM Page F-37 F-37 01/99 NJ450 Process Silicon Junction Field-Effect Transistor


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PDF NJ450 2SK363 IFN146, IFN147 IFN363 J110A D45 TRANSISTOR IFN363 f36 transistor IFN147 IFN146 2SK363 J109 J110A J110
NJ450

Abstract: nj26 interfet INTERFET BF256B
Text: NJ132 NJ132 NJ132 NJ26 NJ26 NJ26 NJ450 NJ450 NJ450 NJ450 NJ132 NJ132 NJ132 NJ72 NJ72 NJ72 NJ16 NJ16 NJ16


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PDF BF244C BF246A BF246B BF246C BF256A BF256B BF256C SMPJ108 SMPJ109 SMPJ110 NJ450 nj26 interfet INTERFET
Not Available

Abstract: No abstract text available
Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (—30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L
1999 - 2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
Text: NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit , 3 mW/°C ­ 65°C to 200°C Process NJ450 Max ­ 40 Unit Test Conditions V ­1 nA , Process NJ450 Max ­ 40 Unit Test Conditions V IG = ­ 1 µA, VDS = ØV ­1 nA VGS = ­


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PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N , ­ 65°C to 200°C Process NJ450 Max ­ 40 Unit Test Conditions V ­1 nA VGS = ­ , Process NJ450 Max ­ 40 Unit Test Conditions V IG = ­ 1 µA, VDS = ØV ­1 nA VGS = ­


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
NJ450

Abstract: No abstract text available
Text: NJ450 Max 10 Test Conditions lG = - 1 m Vos = 0 V A, -3 V Vds = 5 V ,I d = 1 UA


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PDF J110/J110A NJ450 J110A T0-226AA NJ450
IFN152

Abstract: 2SJ44 2SK152 2SK113 2SK363 NJ450 IFP44
Text: 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (— 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450
2001 - 2sk152 equivalent

Abstract: IFN152 2SK152 INTERFET 2SJ44 IFP44 2SK113 10 V JFET TO18 IFN113
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 2SK152 INTERFET 2SJ44 IFP44 2SK113 10 V JFET TO18 IFN113
Not Available

Abstract: No abstract text available
Text: Breakdown Voltage Typ Process NJ450 Max Unit Test Conditions Gate Leakage Current Ig V


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PDF 2N6550 NJ450 G0Q074?
1999 - 2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Text: Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process


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PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44
2sk146

Abstract: ifn146 TO71 package 2sk146 equivalent
Text: le s s V g s (o f f ) ID SS Process NJ450 Max Unit V -1 Min -4 0 Typ Test Conditions Ig


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PDF 2SK146 IFN146 2sk146 TO71 package 2sk146 equivalent
2001 - 2SK146

Abstract: 2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 IFN146
Text: Current (Pulsed) Typ IDSS ­ 40 V 10 mA 375 mW 3 mW/°C ­ 65°C to 200°C Process NJ450 Max


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PDF IFN146 2SK146 NJ450 2SK146 2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 IFN146
2001 - 2SK147 equivalent

Abstract: 2SK147 IFN147
Text: 10 mA 300 mW 2.4 mW/°C Process NJ450 Max ­ 40 Unit Test Conditions V IG = ­ 1 µA


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PDF IFN147 2SK147 NJ450 2SK147 equivalent 2SK147 IFN147
2SK147

Abstract: 2SK147 equivalent IFN147
Text: E6 IF N 1 4 7 8-94 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR · LOW NOISE AUDIO AMPLIFIER · Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Process NJ450 Max Unit V -1 nA pA V mA Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse


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PDF 2SK147 IFN147 NJ450 T0-18 2SK147 2SK147 equivalent IFN147
2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152
1999 - transistor j109

Abstract: transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor
Text: Drain Cutoff Current ID(OFF) rds(on) Drain Gate Capacitance Process NJ450 Max 3


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PDF NJ450 226AA SMPJ108, SMPJ109 transistor j109 transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor
1999 - J110A

Abstract: SMPJ110 J110 SMPJ110A
Text: Drain Source ON Resistance Min ­ 25 ­ 0.5 ­4 10 Process NJ450 Unit Test Conditions


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PDF J110A 226AA SMPJ110, SMPJ110A J110A SMPJ110 J110 SMPJ110A
2SK146

Abstract: IFN146
Text: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range -65°C to 200°C IFN146 At 25°C free air temperature: Static Electrical Characteristics Min Process NJ450 V IG


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PDF 2SK146 IFN146 NJ450 2SK146 IFN146
IFN147

Abstract: No abstract text available
Text: ) gss Gate Reverse Current Typ Process NJ450 -1 Static Electrical Characteristics I


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PDF IFN147 2SK147 NJ450 00Q0BG4 IFN147
Not Available

Abstract: No abstract text available
Text: Process NJ450 Max Min - 25 V V Ig = - 1 mA V ds = 0V Vg s = - 1 5 V , V o s


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PDF T0-226AA
2N5433

Abstract: No abstract text available
Text: 0 0 -1 30 200 200 100 10 -4 Max Unit V pA nA V mA pA nA mV a Process NJ450 Test Conditions Ig =


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PDF fc2N5433fc2N5434 2N5432) 2N5433) 2NS434) 2N5433
1999 - SMP4117

Abstract: SMPJ270 SMPJ230 smp6453 SMP4856 SMP3821 SMP3459 SMP3458 smpj270 interfet smp5104
Text: 1.2 1.2 15 15 15 15 15 [­10] [­10] [­10] - - 8 12 18 NJ26 NJ26 NJ450 NJ450 NJ450 - - - - - - - - - - - - 85 28 28 28 28 15 15 15 15 15 5.0 5.0 5.0 5.0 [­10] [­10] [­10] [­10] [­10] 25 30 30 50 50 NJ450 NJ132


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PDF SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP5462 SMPJ174 SMPJ175 SMPJ176 SMPJ177 SMP4117 SMPJ270 SMPJ230 smp6453 SMP4856 SMP3821 SMP3459 SMP3458 smpj270 interfet smp5104
1999 - PJ32

Abstract: SMPJ309 nj132 smpp1086 SMP4117 SMP4339 SMP3824 SMP5103 SMP4393 SMP3369
Text: 1.2 1.2 15 15 15 15 15 [­10] [­10] [­10] - - 8 12 18 NJ26 NJ26 NJ450 NJ450 NJ450 - - - - - - - - - - - - 85 28 28 28 28 15 15 15 15 15 5.0 5.0 5.0 5.0 [­10] [­10] [­10] [­10] [­10] 25 30 30 50 50 NJ450 NJ132


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PDF SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP5462 SMPJ174 SMPJ175 PJ32 SMPJ309 nj132 smpp1086 SMP4117 SMP4339 SMP3824 SMP5103 SMP4393 SMP3369
J177. P-CHANNEL. TO-92

Abstract: 2N4393 2N5021 2N4856 2N4392 2N4391 smp4856 J174 interfet TOD52
Text: ) Drain Gate Capacitance Process NJ450 Max 3 Drain Source ON Resistance Min ­ 25 ­ 10 , Min ­ 25 ­ 0.5 ­4 10 Process NJ450 Unit Test Conditions V nA VGS = ­ 15V, VDS


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PDF 2N4391, 2N4392, 2N4393 2N4391 2N4392 O-226AB O-92/18) J177. P-CHANNEL. TO-92 2N4393 2N5021 2N4856 2N4392 2N4391 smp4856 J174 interfet TOD52
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