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NESG2101M05-A California Eastern Laboratories (CEL) TRANS NPN 2GHZ M05
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NESG2101M05 datasheet (8)

Part Manufacturer Description Type PDF
NESG2101M05 NEC NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR Original PDF
NESG2101M05-A Renesas Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ M05 Original PDF
NESG2101M05-EVPW24 Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG2101M05 2.4GHZ Original PDF
NESG2101M05-EVPW24-A Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG2101M05 Original PDF
NESG2101M05FB NEC NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) Original PDF
NESG2101M05FB-T1 NEC NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) Original PDF
NESG2101M05-T1 NEC NPN SiGe high frequency transistor. Original PDF
NESG2101M05-T1-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF

NESG2101M05 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05 RF transistor
Text: = 5.0 V 4 M05 NESG2101M05 50 8 mm NESG2101M05-T1 3 k / 3 4 , NPN RF NPN Silicon Germanium RF Transistor NESG2101M05 NPN SiGe RF 125 mW 4 M05 PO , Compound Semiconductor Devices 2002, 2003 NESG2101M05 TA = 25°C ° MIN. TYP. MAX , FB 130260 PU10190JJ02V0DS NESG2101M05 TA = 25°C ° vs. 700 vs. 1.0 (38 × 38 , 0.6 0.7 0.8 0.9 1.0 VBE (V) PU10190JJ02V0DS 3 NESG2101M05 vs. 100 90


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PDF NESG2101M05 PU10190JJ02V0DS M05mm L044-435-1588 X044-435-1579 transistor T1J NESG2101M05-T1 NESG2101M05 RF transistor
2003 - transistor T1J

Abstract: NEC 9319 bjt npn
Text: substrate NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE , DESCRIPTION NEC's NESG2101M05 is fabricated using NEC's high voltage Silicon Germanium process (UHS2-HV), and , P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB , measurement, pulse width 350 s, duty cycle 2 %. California Eastern Laboratories NESG2101M05 ABSOLUTE


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PDF NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn
transistor T1J

Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: Number NESG2101M05-A NESG2101M05-T1-A Quantity 50 pcs (Non reel) 3 kpcs/reel · 8 mm wide embossed taping , NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER , . NESG2101M05 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter DC Characteristics Collector Cut-off Current , PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Data Sheet PU10190EJ02V0DS 3 NESG2101M05 4 Data Sheet PU10190EJ02V0DS NESG2101M05 Data Sheet


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PDF NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING
2002 - transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Text: ORDERING INFORMATION Part Number Quantity Supplying Form NESG2101M05 50 pcs (Non reel) · 8 mm wide embossed taping NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face , DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR , NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter Symbol Test Conditions MIN. TYP , Value 2 FB 130 to 260 Data Sheet PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS


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PDF NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05
transistor gl 1117

Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
Text: INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NEC s high voltage , Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz NESG2101M05 M05 UNITS MIN dBm TYP 21 , NESG2101M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) THERMAL RESISTANCE SYMBOLS PARAMETERS UNITS


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PDF NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019
2002 - transistor T1J

Abstract: NESG2101M05-T1 MICROWAVE TRANSISTOR NEC NESG2101M05 NESG2101M05 T1J marking
Text: INFORMATION Part Number Quantity Supplying Form NESG2101M05 50 pcs (Non reel) · 8 mm wide embossed taping NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the , . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM , NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter Symbol Test Conditions MIN. TYP , Value 2 FB 130 to 260 Data Sheet PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS


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PDF PU10190EJ02V0DS NESG2101M05 transistor T1J NESG2101M05-T1 MICROWAVE TRANSISTOR NEC NESG2101M05 NESG2101M05 T1J marking
2003 - BF 3027

Abstract: transistor T1J NESG2101M05-T1-A 13444 1GP20 mje 2055 14851 GA1060 nec 2562 S21E
Text: NESG2101M05-T1-A SUPPLYING FORM 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the perforation , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NECs high voltage , Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz NESG2101M05 M05 UNITS MIN dBm TYP 21 , Laboratories NESG2101M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS


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PDF NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A 13444 1GP20 mje 2055 14851 GA1060 nec 2562 S21E
nesg2101m05-t1-a

Abstract: NESG2101M05-A
Text: the perforation side of the tape NESG2101M05-T1 NESG2101M05-T1-A Remark To order evaluation , -pin thin-type super minimold (M05) package ORDERING INFORMATION Part Number NESG2101M05 Order Number NESG2101M05-A Package Flat-lead 4-pin thin-type supper minimold (M05, 2012 PKG) (Pb-Free) Quantity 50 pcs (Non , A Business Partner of Renesas Electronics Corporation. NESG2101M05 NPN SiGe RF Transistor for , Renesas Electronics Corporation. NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25° C


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PDF NESG2101M05 R09DS0036EJ0300 NESG2101M05 PU10190EJ02V0DS nesg2101m05-t1-a NESG2101M05-A
2002 - transistor T1J

Abstract: T1J marking
Text: ORDERING INFORMATION Part Number NESG2101M05 NESG2101M05-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel , PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF , Compound Semiconductor Devices 2002 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , 130 to 260 2 Preliminary Data Sheet PU10190EJ01V0DS NESG2101M05 PACKAGE DIMENSIONS , NESG2101M05 · The information in this document is current as of November, 2002. The information is subject


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PDF NESG2101M05 NESG2101M05 transistor T1J T1J marking
2012 - Not Available

Abstract: No abstract text available
Text: NESG2101M05-T1 NESG2101M05-T1-A Remark To order evaluation samples, please contact your nearby sales office , > ORDERING INFORMATION Part Number NESG2101M05 Order Number NESG2101M05-A Package Flat-lead 4-pin thin-type , Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW , , 2012 Page 1 of 13 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise


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PDF NESG2101M05 R09DS0036EJ0300
2012 - Not Available

Abstract: No abstract text available
Text: (M05) package ORDERING INFORMATION Part Number NESG2101M05 Order Number Package NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A Remark Flat-lead 4-pin thin-type supper minimold (M05 , Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW , , 2012 Page 1 of 13 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL


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PDF NESG2101M05 R09DS0036EJ0300
2010 - ic isl 887

Abstract: 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
Text: NESG4030M14 NESG2101M05 /M16 SiGe HBT PA PA PA901TU SiGe HBT SiGe HBT 17 900 , D/CAGC 20 IF Si Tr. 56 V NESG2101M05 /M16 NESG210719 NESG210833 NESG220033/34 , ) 2SC5754(NE664M04) NESG2101M05 NE552R479A SW SPDT PG2179TB PG2030TK PG2406T6R - - - - , 2SC5288 2SC5289 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF µPC8181TB µPC8182TB H , Tr. NESG3031M05 NESG4030M14 NESG2101M05 SiGe HBT SiGe HBT 34 1 5


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PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
NESG2101M05

Abstract: No abstract text available
Text: NONLINEAR MODEL NESG2101M05 CCBPKG SCHEMATIC CCB LCPKG LBPKG Base LB Q1 CCE Collector LE CCEPKG LEPKG CBEPKG Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.64e-15 309.7 1.079 56 233.9 11.67e-15 1.648 20.01 1.080 2.782 54.57e-3 1.024e-18 1.35 1.6 2.2 0.05 1e-4 4.8 1.461e-12 0.798 0.137 , CCEPKG CBEPKG LBPKG LCPKG LEPKG NESG2101M05 0.01 pF 0.2 pF 0.16 nH 0.17 nH 0.45 pF 0.02 pF 0.05 pF 0.8 nH


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PDF NESG2101M05 64e-15 67e-15 57e-3 024e-18 461e-12 9e-15 4e-12 NESG2101M05
2010 - 2SC5508

Abstract: transistor 20107 NE3509 UPC8236 NE3517S03 UPC3243 NE5510279A 2SC4226 APPLICATION NOTES NESG270034 800 Mhz Cordless Phone circuit diagram
Text: . NESG2101M05 /M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The devices listed in the above , NESG2101M05 /M16 SiGe HBT NESG210719 Suitable for less than 5-6 V operation NESG210833 Low , ), 2SC5289(NE69039) - PA Medium Output Power Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A , 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF Driver Amplifier µPC8181TB µPC8182TB H , NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05 SiGe HBT Remark The


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PDF R09CA0001EJ0300 2SC5508 transistor 20107 NE3509 UPC8236 NE3517S03 UPC3243 NE5510279A 2SC4226 APPLICATION NOTES NESG270034 800 Mhz Cordless Phone circuit diagram
UPC8236

Abstract: 2SC5508 NE3512S02 digital tv tuner SW SPDT NESG240033 hjfet NESG2101M05 ANTENNA parabolic 2SC3356/NE85633
Text: PA Discrete Tr. NESG2101M05 /M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , ) Si Tr. Suitable for less than 5-6 V operation Low Distortion, Low Noise NESG2101M05 /M16 SiGe , ) NESG2101M05 NE552R479A Medium Output Power (0.4 W) Si LDMOS FET 6-pin Super Minimold 6-pin Lead-less , /Q Modulator I(TX) from B/B BPF Power Amplifier 2SC5288 2SC5289 2SC5754 NESG2101M05 , . Type Name NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05 SiGe


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PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner SW SPDT NESG240033 hjfet NESG2101M05 ANTENNA parabolic 2SC3356/NE85633
mobile phone basic block diagram

Abstract: PG2158T5K NE5510279A UPC8236 2SC3357/NE85634 microwave Duplexer pc2757tb NE3517S03 SW SPDT NE662M04
Text: PA Discrete Tr. NESG2101M05 /M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , Distortion, Low Noise NESG2101M05 /M16 SiGe HBT NESG210719 Suitable for less than 5-6 V operation , Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A Medium Output Power (0.4 W) Si LDMOS FET 6 , NESG2101M05 NE552R479A µPG2318T5N 36 Oscillator 2SC5801 VCO SPDT Switch µPG2030TK , Discrete Tr. NESG2101M05 SiGe HBT Remark The devices listed in the above table are merely examples


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PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K NE5510279A UPC8236 2SC3357/NE85634 microwave Duplexer pc2757tb NE3517S03 SW SPDT NE662M04
2010 - UPC8236

Abstract: 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
Text: PA Discrete Tr. NESG2101M05 /M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , for less than 5-6 V operation Low Distortion, Low Noise NESG2101M05 /M16 SiGe HBT NESG210719 , ), 2SC5289(NE69039) - PA Medium Output Power Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A , Amplifier 2SC5288 2SC5289 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF Driver Amplifier , Tr. Type Name NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05


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PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
2010 - SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: : 32 dBm POUT typ 4 NESG2101M05 120 mW SiGe Bipolar Transistor Driver 4 4 4 4 4 4 4 4 4 , NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG3032M14 NE662M04 NE3508M04 NESG2101M05 WLAN , NESG3031M05 NESG3032M14 NESG3033M14 - NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 - DAB and 1.4 ­ 2.35 GHz Satellite Radio , SiGe Transistor 0.8 @ 2.0 GHz 17 @ 2.0 GHz +13 M05 NESG2101M05 SiGe Transistor


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PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
mosfet dimmer

Abstract: igbt dimmer EMMA3TL emma3 EMMA2 NEC emma 90-nm CMOS fet PWM generator for IGBT EEFL NEC bldc
Text: 1 COFDMDVB-T LNA DVB ARIB IF NE461M02 NESG2101M05 PC2748TB PC3237TK , EMMA2TS TV RAM 1 LSI 2SC5337 Si Bip. Tr. NE461M02 NESG2101M05 PC2748TB PC3237TK


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PDF X19512JJ2V2PF 8/16bit 32bit V850E/IG3 V850ES/IE2 V850ES/IK1 V850E/IF3 78K0R/Ix3 512JJ2V2PF mosfet dimmer igbt dimmer EMMA3TL emma3 EMMA2 NEC emma 90-nm CMOS fet PWM generator for IGBT EEFL NEC bldc
2013 - SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Text: NE5520279A NESG2101M05 2.4 GHz Choose LDMOS FET: 32dBm POUT typ Single or Multi Throw RFIC Switches , NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG7030M04 NESG3032M14 NE662M04 Satellite Radio and , 5 – 6 GHz NESG7030M04 NESG7030M04 NE3508M04 NESG2101M05 LNA Performance (see Data , 2.0 GHz 17 @ 2.0 GHz +13 M05 NESG2101M05 SiGe Transistor 0.9 @ 2.0 GHz 13 @ 2.0 , 1 30 6 100 23 15 120 600 34 Pkg: 4 pin SOT-89 style NESG2101M05


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PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: .05 2.05±0.1 NESG2101M05 T1J PART NUMBER NE681M13 NE685M13 NE687M13 NE688M13 MARKING D1, D2


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
NE5510279A

Abstract: uPB1512TU NE350184C dvbt diagram 5.8 ghz Transceiver IC NE552 NE3503M04 gp bjt InMarSat demodulator ne3210s01
Text: GHz NE34018 2nd stage; NF 0.3 dB; Ga 16 dB @ f 2.4 GHz NESG2101M05 3rd stage; NF 0.3 dB , 25 21.5 13 0.8 5 2 NESG2101M05 50 17 17.0 21.5 0.9 10 2


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PDF
1999 - 1658 NEC

Abstract: SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
Text: NESG2031M05 NESG2101M05 SiGe HBT - - - - DEMOD - - Down-converter - PLL , System) 2.4 GHz Wireless LAN LNA 2SC5508 NESG2021M05 2SC5509 NESG2031M05 NESG2101M05 I/Q


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PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: 1.0 10 40 10 22 10 50 14 6.5 120 100 NESG2101M05 1 2.0 3.6


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
Text: Mobile Comm., VCO, SiGe HBT 1 3 2 000 NF = 0.8 dB 3USMM NESG2101M05 W-CDMA, 2.4 GHz


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PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
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