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Part Manufacturer Description Datasheet Download Buy Part
LT1995CDD#PBF Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LT1995CMS#TR Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LT1995IDD#PBF Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT1995IDD#TR Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT1995CDD#TRPBF Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LT1995IMS#TR Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C

NEC k 1995 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - NEC k 1995 transistor

Abstract: 3SK176A rf id based home appliances control
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS · , Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature * RL 10 k , Document No. P10567EJ2V0DS00 (2nd edition) (Previous No. TD-2263) Date Published August 1995 P Printed in Japan * Old Specification/New Specification © 1995 1989 3SK176A TYPICAL


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PDF 3SK176A NEC k 1995 transistor 3SK176A rf id based home appliances control
4 npn transistor ic 14pin

Abstract: PA1032 8 npn transistor ic 14pin
Text: DATA SHEET NEC COMPOUND TRANSISTOR _ _ _ _ _ _ _ _ _ _jf P A 103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin , © NEC Corporation 1995 NEC jiPA103 ELECTRICAL CHARACTERISTICS (Unless otherwise specified T a , o o k s . If c u stom ers intend to u s e NEC devices for applications other than th o s e specified , DESCRIPTION AND APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting


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PDF iPA103B: iPA103G: 14-pin fPA103 PA103 14-pin 4 npn transistor ic 14pin PA1032 8 npn transistor ic 14pin
d1072

Abstract: 2SK2541 MEI-1202 MF-1134
Text: 1995 M Printed in Japan © NEC Corporation 1995 NEC 2SK2541 ELECTRICAL CHARACTERISTICS (Ta = +25 , DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH , ) 4.0±0.2 2.0±0.2 EQUIVALENT CIRCUIT 1. Source 2. Drain 3. Gate Drain(D) Gate(G) i k , + O—fâ , of the transistor serves as a protector against ESD. When this device is actually used, an additional , Turn-Off Delay Time td(off) 21 ns Fall Time tf 31 ns 2 NEC 2SK2541 TYPICAL CHARACTERISTICS (Ta =


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PDF 2SK2541 2SK2541 d1072 MEI-1202 MF-1134
2SK2541

Abstract: MEI-1202 MF-1134 NEC reliability 1995
Text: edition) (Previous No. TD-2522) Date Published September 1995 M Printed in Japan © NEC Corporation 1995 NEC 2SK2541 ELECTRICAL CHARACTERISTICS (Ta = +25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX , from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2541 is a , . Drain 3. Gate Drain(D) Gate(G) i k , + O—f—1i Source(S) (Diode in the figure is the parasitic


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PDF 2SK2541 2SK2541 25ndustrial MEI-1202 MF-1134 NEC reliability 1995
NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC3603 NEC PART NUMBER MARKING NEC marking b 2SC2367 2SC2150
Text: . Monlh 1 2 3 4 5 Year 1988 19 89 V 1990 1991 1992 1993 1994 1995 1996 j Black k I h i j k I m n o , DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , - Collector to Base Voltage -V 2 NEC 2SC3604 INSERTION GAIN vs. C O 0.5 1 5


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PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3603 NEC PART NUMBER MARKING NEC marking b 2SC2367 2SC2150
1997 - 3SK135A

Abstract: of 8404
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters , 150 ­65 to +150 *RL 10 k 0.4+0.1 ­0.05 0.8 VDSX VG1S* VG2S* ID PT Tch Tstg , = 900 MHz IDSS Classification Class Marking IDSS L/LS* K /KS* U65 U66 0.01 to 2 , 1995 P Printed in Japan * Old specification/New specification © 1995 3SK135A TYPICAL


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PDF 3SK135A 3SK135A of 8404
1999 - 4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: Published October 1999 N CP( K ) Printed in Japan The mark shows major revised points. © 1995 , DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY · OUTSTANDING hFE LINEARITY · TWO PACKAGE OPTIONS , transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and , ratings for each transistor . Caution electro-static sensitive devices The information in this document


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PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
nec b 536 transistor

Abstract: NEC B 536
Text: Japan © NEC Corporation 1995 NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) C H A R A C T E R , DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES · · · Low Noise, High Gain Low Voltage Operation Low , STYLE -H o OJ E m bossed tape 8 mm w ide. 2 S C 4 9 5 8 -T 1 3 K pcs/R eel. Pin3 (C ollector) face to p e rfo ra tion side of the tape. E m bossed tape 8 mm w ide. 2 S C 4 9 5 8 -T 2 3 K pcs/R eel


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PDF 2SC4958 nec b 536 transistor NEC B 536
1999 - 4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Text: Published October 1999 N CP( K ) Printed in Japan The mark shows major revised points. © 1995 , DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It , maximum ratings for each transistor . Caution electro-static sensitive devices The information in this , latest version. Not all devices/types available in every country. Please check with local NEC


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PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor
2SJ460

Abstract: MEI-1202
Text: Corporation 1995 NEC 2SJ460 ELECTRICAL CHARACTERISTICS (Ta = +25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX , from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching , ° -0.42 EQUIVALENT CIRCUIT 1. Source Dra;n(D) 2. Drain ?_ 3. Gate ^ , j-l Gate(G) k , o—-t—1 ^ à , of the transistor serves as a protector against ESD. When this device is actually used, an additional


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PDF 2SJ460 2SJ460 MEI-1202
1997 - 3SK177

Abstract: NEC U71 U73-U74
Text: DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK177 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters , edition) (Previous No. TN-1877) Date Published August 1995 P Printed in Japan © 1995 3SK177 , 3SK177 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k RFC 1 000 pF 1 000 pF L1


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PDF 3SK177 3SK177 NEC U71 U73-U74
1997 - NEC U71

Abstract: 3SK299 U71 nec
Text: DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES PACKAGE DIMENSIONS · Suitable , 35 30 to 40 IDSS Document No. P11034EJ1V0DS00 (1st edition) Date Published December 1995 P Printed in Japan © 1995 3SK299 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs , ) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50


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PDF 3SK299 NEC U71 3SK299 U71 nec
d1072

Abstract: 2SJ460 MEI-1202
Text: (3rd edition) Date Published April 1996 M Printed in Japan © NEC Corporation 1995 NEC 2SJ460 , DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH , . Drain ?_ 3. Gate ^ , j-l Gate(G) k , o—-t—1 ^ ô Source(S) (Diode in the figure is the parasitic diode.) The diode connected between the gate and source of the transistor serves as a protector , Fall Time tf 130 ns NEC 2SJ460 TYPICAL CHARACTERISTICS (Ta = 25 °C) 100 DERATING FACTOR OF


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PDF 2SJ460 2SJ460 d1072 MEI-1202
1997 - NEC k 2134 transistor

Abstract: NEC k 2134 k 2134 nec TRANSISTOR nf 842 u79 transistor nf025 K 3699 transistor u-79 4009 not gate 3SK206
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS use as RF amplifier , . P10568EJ2V0DS00 (2nd edition) (Previous No. TC-2134) Date Published August 1995 P Printed in Japan © 1995 , 3SK206 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k RFC 1 000 pF 1 000 pF VG1S


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PDF 3SK206 NEC k 2134 transistor NEC k 2134 k 2134 nec TRANSISTOR nf 842 u79 transistor nf025 K 3699 transistor u-79 4009 not gate 3SK206
2005 - NEC k 1995 transistor

Abstract: No abstract text available
Text: -3574) Date Published July 2005 NS CP( K ) Printed in Japan 1995 µ PA506T 2 Data Sheet , DATA SHEET SILICON TRANSISTOR µ PA506T NPN/PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQENCY , are available in every country. Please check with an NEC Electronics sales representative for , without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products


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PDF PA506T G17683EJ2V0DS00 IC-3574) G17683EJ2V0DS NEC k 1995 transistor
1997 - nec k 813

Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE , ) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan MIN. © 1995 NE33284A , effect transistor with AlGaAs shottky barrier gate. 2 NE33284A TYPICAL CHARACTERISTICS (TA = 25 , 1 + | |2 - | S11 |2 - | S 22 |2 2 | S12 | S 21 | MSG. = | S 21 | | S12 | K = MAG. = | S 21 | ( K ± K 2 - 1) | S12 | = S11 S 22 - S 21 S12 3 NE33284A S-Parameters VDS = 2


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PDF NE33284A NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky IEI1207 NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
NEC 41-A 002

Abstract: 8085 based traffic control system
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES · · · · Suitable for use as RF , s t 1995 P P rinted in J a p a n © N E CC orporation 1995 NEC TYPICAL CHARACTERISTICS (T a = , ds = 10 V, V g2S = 4 V, Id = 10 mA, f = 1 MHz Id s s Classification L/LS* U65 0.01 to 2 K /KS , mA 0 1.0 2.0 3.0 4.0 Vg2s - Gate2 to Source Voltage - V 2 NEC POWER GAIN


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PDF 3SK135A 20bots NEC 41-A 002 8085 based traffic control system
2005 - MARKING H19

Abstract: Diode marking m7 2SJ461 m30 tf 125 m02 marking transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR , , Duty Cycle 50% Remark The diode connected between the gate and source of the transistor serves as a , check with an NEC Electronics sales representative for availability and additional information. Document No. D10730EJ4V0DS00 (4th edition) Date Published April 2005 NS CP( K ) Printed in Japan The mark shows major revised points. 1995 2SJ461 ELECTRICAL CHARACTERISTICS (TA = 25


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PDF 2SJ461 2SJ461 MARKING H19 Diode marking m7 m30 tf 125 m02 marking transistor
1997 - U94 marking

Abstract: 3SK224
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS NF = 1.8 dB , Temperature Tstg ­55 to +125 °C (1.9) mA Total Power Dissipation *1 RL 10 k Document No. P10576EJ2V0DS00 (2nd edition) (Previous No. TD-2265) Date Published August 1995 P Printed in , 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k


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PDF 3SK224 P10576EJ2V0DS00 TD-2265) U94 marking 3SK224
1997 - diode u1G

Abstract: 3SK253
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES : PACKAGE DIMENSIONS (VDS = 3.5 V , Tstg ­55 to +125 °C *1: RL 10 k *2: Free air 5° 0.8 VG2S 1.1 +0.2 ­ 0.1 VG1S , -2372) Date Published August 1995 P Printed in Japan © 1993 3SK253 ELECTRICAL CHARACTERISTICS (TA , NF TEST CIRCUIT AT f = 900 MHz VG2S 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50


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PDF 3SK253 diode u1G 3SK253
1997 - 2u55

Abstract: 3SK134B
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES NF = 2.4 dB TYP. (@ = 900 MHz , Temperature Tch 125 °C Storage Temperature Tstg ­55 to +125 °C *1 : RL 10 k 5o , . P10566EJ2V0DS00 (2nd edition) (Previous No. TD-2398) Date Published August 1995 P Printed in Japan © 1993 , (3 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF to 10 pF INPUT 50 OUTPUT 50 to


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PDF 3SK134B SC-61) 2u55 3SK134B
3SK176A

Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS · High , Current Total Power Dissipation Channel Temperature Storage Temperature * RL 10 k +0.2 2.8­0.1 , . P10567EJ2V0DS00 (2nd edition) (Previous No. TD-2263) Date Published August 1995 P Printed in Japan * Old


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1998 - TC-1654

Abstract: L33 TRANSISTOR transistor L33 MEI-1202 MF-1134 FN1A4M npn l33
Text: DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters · Resistors Built-in TYPE , = 5 V Storage Time tstg 2.0 5.0 µs RL = 1 k Turn-off Time toff 2.15 6.0 µs 100 VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA k PW = , (3rd edition) (Previous No. TC-1654) Date Published October 1995 P Printed in Japan © 1985


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1995 - PS2802-1

Abstract: PS2802-1-F3 PS2802-1-F4 PS2802-4 PS2802-4-F3 PS2802-4-F4 VDE0884 ps2802
Text: (1st edition) (Previous No. P10125EJ5V0DS00) Date Published February 2003 CP( K ) Printed in Japan The mark · shows major revised points. © NEC Compound Semiconductor Devices 1995 , 2003 PS2802 , DATA SHEET PHOTOCOUPLER PS2802-1,PS2802-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE , isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo transistor , latest version. Not all devices/types available in every country. Please check with local NEC Compound


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PDF PS2802-1 PS2802-4 PS2802-4 16-pin PS2802-1-F3, PS2802-4-F3, PS2802-1, E72422 PS2802-1-F3 PS2802-1-F4 PS2802-4-F3 PS2802-4-F4 VDE0884 ps2802
1999 - 4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (Each Transistor has fT 9 GHz) · OUTSTANDING hFE LINEARITY · , APPLICATIONS The µPA102 is a user configurable Silicon bipolar transistor array consisting of two separate , +125 TJ TSTG * Absolute maximum ratings for each transistor . Caution electro-static , country. Please check with local NEC representative for availability and additional information


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PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G
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