The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

NEC C900 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2SD2165

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin-molded insulation , . Not all devices/types available in every country. Please check with local NEC representative for


Original
PDF 2SD2165 2SD2165
2004 - 2SD2165

Abstract: NEC marking b
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat


Original
PDF 2SD2165 2SD2165 NEC marking b
2SD2165

Abstract: nec transistor Transistor NEC 30
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat


Original
PDF 2SD2165 2SD2165 nec transistor Transistor NEC 30
2002 - D1615

Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1578 QUALITY GRADES Electrode connection 1. Emitter 2. Collector 3.Base · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E


Original
PDF 2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12
2002 - darlington transistor for audio power application

Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor . This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for , to darlington connection · Large current capacitance and low VCE(sat) · TO-126 power transistor with high power dissipation · Complementary transistor with 2SC4342 QUALITY GRADES · Standard


Original
PDF 2SA1714 2SA1714 O-126 2SC4342 C11531E) darlington transistor for audio power application 2SC4342 C11531E
2002 - Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1572 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , local NEC representative for availability and additional information. Document No. D16156EJ2V0DS00


Original
PDF 2SD2403 2SD2403 2SB1572
2004 - 2SA1841

Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR , a high-speed Darlington power transistor . PART NUMBER PACKAGE 2SA1841 MP-10 This transistor is ideal for high-precision control such as PWM control for pulse motors brushless motors in OA and FA equipment. In addition, this transistor features a package that can be automounted in radial , in every country. Please check with an NEC Electronics sales representative for availability and


Original
PDF 2SA1841 2SA1841 MP-10
2002 - 2SB1430

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is , transistor features a small resin-molded insulation type package, thus contributing to high-density mounting , version. Not all devices/types available in every country. Please check with local NEC representative , change without notice. For actual design-in, refer to the latest publications of NEC 's data sheets or


Original
PDF 2SB1430 2SB1430
2002 - 2SD2164

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin insulated package , . Not all devices/types available in every country. Please check with local NEC representative for


Original
PDF 2SD2164 2SD2164
2002 - NEC semiconductor

Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor developed for lowfrequency power amplifiers and low-speed switching. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers , Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the , country. Please check with local NEC representative for availability and additional information


Original
PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E
2002 - NEC semiconductor

Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator , diode for reverse cable QUALITY GRADES · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of


Original
PDF C11531E) NEC semiconductor C11531E dumper diode dumper
2SB1149

Abstract: 2SD1692
Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) · High DC current gain due , -126 type power transistor · Complementary transistor : 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° , latest version. Not all devices/types available in every country. Please check with local NEC , design-in, refer to the latest publications of NEC 's data sheets or data books, etc., for the most


Original
PDF 2SD1692 O-126 2SB1149 2SB1149 2SD1692
2002 - TRANSISTOR K 314

Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on , base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids , Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended


Original
PDF 2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor
2002 - 2SD2402

Abstract: transistor 2sD2402 Transistor Marking EY
Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1571 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , local NEC representative for availability and additional information. Document No. D16155EJ2V0DS00


Original
PDF 2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY
2002 - 2SC4815

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and for , available in every country. Please check with local NEC representative for availability and additional


Original
PDF 2SC4815 2SC4815
2002 - 2SA1843

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping , . Please check with local NEC representative for availability and additional information. Document No


Original
PDF 2SA1843 2SA1843
2002 - 2SC4811

Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor . This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounted in , in every country. Please check with local NEC representative for availability and additional


Original
PDF 2SC4811 2SC4811
2002 - 2SC4813

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus , . Please check with local NEC representative for availability and additional information. Document No


Original
PDF 2SC4813 2SC4813
2002 - Transistor NEC 30

Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm , . This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURES · , . Not all devices/types available in every country. Please check with local NEC representative for , recommended below, contact an NEC sales representative. 2 Data Sheet D10846EJ2V0DS CE1N2R [MEMO


Original
PDF
2002 - 2SC4814

Abstract: 2Sc4814 equivalent
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transistor , local NEC representative for availability and additional information. Document No. D15604EJ2V0DS00


Original
PDF 2SC4814 2SC4814 2Sc4814 equivalent
2002 - 2SD1581

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and low power loss. This transistor is ideal for use in high , in every country. Please check with local NEC representative for availability and additional , publications of NEC 's data sheets or data books, etc., for the most up-to-date specifications of NEC


Original
PDF 2SD1581 2SD1581
2002 - 2SA1871

Abstract: 2sc4942
Text: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT , power signal package · High voltage · Fast switching speed · Complementary transistor with 2SC4942 QUALITY GRADES Electrode connection · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to 1: Emitter 2: Collector 3: Base


Original
PDF 2SA1871 2SA1871 2SC4942 C11531E) 2sc4942
2SC1425

Abstract: 2SC1041 F14C transistor oscillator 2SD28 2Sd288 Transistor Class AB Audio Power Amplifier Application Note transistor oscillator circuit 2SC1118 microwave semiconductor corporation rf power transistor
Text: USER'S MANUAL DEGRADATION ©F ¡1FE OF TRANSISTOR OSCILLATOR AND GOUNTERMEASURES As microwave transistors have made progress in recent years, many L-C band transistor oscillators have been used. Transistor oscillators have a wide variable frequency range, low residual FM noise, and simple power circuit configuration, and excel in reliability and price. This document describes the degradation of hFE of transistor , phenomenon takes place because the reliability of the transistor is low, the real problem often lies in the


OCR Scan
PDF
2002 - transistor marking 7D

Abstract: 2SA1871
Text: transistor with the 2SA1871 QUALITY GRADES · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Electrode connection Corporation to know , DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm) voltage switching. This transistor is ideal for use in switching devices such as


Original
PDF 2SC4942 2SC4942 2SA1871 C11531E) transistor marking 7D 2SA1871
2002 - 2SD1843

Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON , connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors , available in every country. Please check with local NEC representative for availability and additional , . For actual design-in, refer to the latest publications of NEC 's data sheets or data books, etc., for


Original
PDF 2SD1843 2SD1843 diode dumper
Supplyframe Tracking Pixel