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NEC B 617 Datasheets Context Search

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transistor NEC B 617

Abstract:
Text: fo r any e rro rs w h ich may appear in th is docum ent. NEC C orporation does not assum e any lia b , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique , . * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall , ) (P re v io u s No. T D -2 4 0 1 ) Date P u b lish e d J u ly 1995 P P rinted in J a p a n © N E CC


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PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 7749 transistor ic 151 811 transistor 3568 zo 607 p 408
2001 - transistor NEC B 617

Abstract:
Text: perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037 , 2SC5338 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 2.1 1.6 0.8 0.85 E B


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PDF 2SC5338 2SC4703 2SC5338-T1 transistor NEC B 617 2SC4703 2SC5338 2SC5338-T1 dsa0022806 iC 828 Transistor sf 818 transistor
nec hf 324

Abstract:
Text: pT Notel T, Tstg PIN CONNECTIONS E: Emitter C: Collector B : Base Note 1 . 0.7 mm x 16 cm , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA , < < NEC TYPICAL CHARACTERISTICS (TA= 25 °C) lc - V ce 2SC5338 Characteristics lc- Collector , Collector Current - mA - Collector to Base Voltage - V IM2 - lc Characteristics Distortion - d B , Collector Current - mA 3 NEC IS21 e |2 Ic 2SC5338 Characteristics IS2 iel2 - Insertion Power


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PDF 2SC5338 2SC5338 2SC4703 nec hf 324 nec 2501 Le 629 transistor NEC B 617 transistor NEC D 587 341S NEC 2501 LE 737 transistor lc 7822 c
NEC 2987

Abstract:
Text: N CP(K) Printed in Japan © NEC Corporation 1998 NEC hFE CLASSIFICATION RANK Marking hFE EB , DISSIPATION 50 Vce= 3 V 5 £ < E 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE 30 Q ¡5 5 CL o B O £ o O , 2 Preliminary Data Sheet NEC GAIN BANDWIDTH PRODUCT 2SC5435 INSERTION POWER GAIN fr - , /fNSERTlON N F - Noise Figure - d B 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 , 50 - Collector to Base Voltage - V Preliminary Data Sheet 3 NEC 2SC5435 V ce


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PDF 2SC5435 NEC 2987 transistor NEC B 617 TL 1701 transistor NEC D 822 P 9418 transistor TL 431 0323
3692 nec

Abstract:
Text: (K) Printed in Japan © NEC Corporation 1998 NEC RECOMMENDED OPERATING CONDITION (Ta = 2 5 , . 10 Unit kA 2 V, Vos = 0 V b Id 20 -0.2 50 =2V 60 -0.7 65 0.8 0.4 90 -2.0 mA V mS , Data Sheet NEC PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.2 V NE4210M01 0.153 , o 5 6 Preliminary Data Shee 3 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) NE4210M01 , Id -D rain Current - m A f - Frequency - GHz 4 Preliminary Data Sheet NEC Gain


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PDF NE4210M01 NE4210M01 200/im NE4210M01-T1 3692 nec
2001 - 2SC5742

Abstract:
Text: /types available in every country. Please check with local NEC Compound Semiconductor Devices , Published January 2002 CP(K) Printed in Japan The mark · shows major revised points. © NEC Compound , 45.7 51.7 57.2 61.7 65.1 67.8 69.4 0.585 0.587 0.587 0.592 0.595 0.600 0.605 0.606 , 61.6 61.6 61.7 61.3 0.262 0.266 0.270 0.275 0.281 0.287 0.293 0.297 0.304 0.307 -87.9 , 0.229 61.5 61.6 61.7 61.9 61.9 62.0 61.7 61.3 61.2 60.6 0.216 0.220 0.225 0.231 0.237


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PDF 2SC5742 2SC5742-T3 2SC5742 2SC5742-T3
2001 - input output npn 547 transistor

Abstract:
Text: country. Please check with local NEC Compound Semiconductor Devices representative for availability and , in Japan © NEC Compound Semiconductor Devices 2001 2SC5742 ELECTRICAL CHARACTERISTICS (TA = , 57.2 61.7 65.1 67.8 69.4 70.7 64.9 49.1 MAG. S22 ANG. (deg.) -7.4 -14.4 -20.4 -25.4 -29.4 -32.9 -35.8 , 57.0 57.9 58.9 59.7 60.3 60.8 61.1 61.6 61.6 61.6 61.7 61.3 61.1 55.2 44.6 MAG. S22 ANG. (deg.) -21.3 , 46.1 44.6 44.2 45.6 47.0 48.7 50.3 51.9 53.5 54.8 56.1 57.1 58.3 59.0 60.0 60.5 61.0 61.5 61.6 61.7


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PDF 2SC5742 2SC5742 2SC5742-T3 input output npn 547 transistor
3563 1231

Abstract:
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , 0.1 ^ 0- 15-o, * Please contact with responsible NEC person, if you require evaluation sample , S 0 0 (2nd e d itio n ) (P re v io u s No. T D -7 9 3 8 ) D ale P u b lish e d A u g u s i 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C , hFE KB T83 75 to 150 2 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) TOTAL POWER DISSIPATION


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PDF 2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590
1999 - poon

Abstract:
Text: providing smooth tuning over the design band. Alpha Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 , Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 · Email sales@alphaind.com · www.alphaind.com , resistive divider R1/R3/R2 . The NEC NE68119 bipolar transistors were selected to best fit performances , " component. For the model of NEC NE68119 we used the Gumel Poon model of Libra IV with the coefficients , Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 · Email sales@alphaind.com · www.alphaind.com


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PDF APN1005 6/99A poon CR10-330J-T TOKO Catalogue reverse biasing a varactor diode NE68119 varactor diode capacitance measurement x band varactor diode NEC Catalogue CR10-102J-T semiconductors catalogue
Colpitts VCO design

Abstract:
Text: and X2 form a differential configuration with X3 as a current source. All of the transistors are NEC , connection of capacitive branches SRLC4 and SRLC5/X4, Alpha Industries, Inc. [781] 935-5150 · Fax [ 617 , -079 Figure 1. VCO Model Schematic 2 Alpha Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 · Email , Bench Alpha Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 · Email sales@alphaind.com · , Alpha Industries, Inc. [781] 935-5150 · Fax [ 617 ] 824-4579 · Email sales@alphaind.com · www.alphaind.com


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PDF APN1013 APN1004, APN1006, APN1005, APN1007, 8/99A Colpitts VCO design gsm circuit diagram project GSM vco gsm Handset Circuit Diagram vco gsm 0603AU2R0JAT9 CR10-470J-T NE68519 VCO circuit diagram Tuner Applications APN1006
1998 - sf 818 transistor

Abstract:
Text: ±0.06 V Collector Current E 0.42 ±0.06 V Collector to Emitter Voltage B , Storage Temperature Tstg 1.5 3.0 0.46 ±0.06 PIN CONNECTIONS E: Emitter C: Collector B , .322 - 96.3 1600 .349 157.0 2.017 61.7 .220 68.8 .314 - 92.3 1700 , .290 150.4 1.886 61.7 .247 69.4 .371 - 89.3 2000 .300 148.7 1.787 , any means without the prior written consent of NEC Corporation. NEC Corporation assumes no


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PDF 2SC5338 2SC5338 2SC4703 sf 818 transistor transistor NEC B 617 NPN transistor mhz s-parameter 2SC4703
1998 - 2SC5010

Abstract:
Text: 61.7 62.2 61.8 62.0 62.0 62.4 63.2 61.8 60.3 58.6 57.9 58.1 56.6 0.812 0.575 0.447 , ­23.4 ­39.8 ­51.9 ­58.7 ­ 61.7 ­63.7 ­67.3 ­71.8 ­76.5 ­82.0 ­90.3 ­100.8 ­110.5 ­118.5 , 68.2 61.7 57.4 53.3 48.0 0.050 0.094 0.132 0.160 0.181 0.200 0.216 0.220 0.220 0.218 , means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for


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PDF 2SC5435 2SC5010 2SC5435 9418 transistor marking tk V 8623 transistor
2000 - 2SC5651

Abstract:
Text: evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE , devices/types available in every country. Please check with local NEC representative for availability and , 0.208 60.5 61.2 61.7 62.1 62.5 62.5 62.6 62.6 62.5 62.1 0.147 0.137 0.128 0.120 0.112 , 0.259 0.269 0.279 0.289 0.299 0.309 61.7 61.3 60.9 60.4 59.8 59.2 58.3 57.5 57.0 56.3 , 0.100 0.111 61.6 57.7 59.2 61.7 63.3 65.1 66.1 67.0 67.5 0.655 0.416 0.300 0.237


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PDF 2SC5651 S21e2 2SC5651-T1 2SC5651 TRANSISTOR 2sc5651 419-1 transistor npn 4-071
1997 - nec 2401 831

Abstract:
Text: nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique , contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 , ­46.4 ­47.5 ­48.8 ­50.3 ­51.4 ­52.8 ­54.2 ­55.2 ­56.7 ­58.4 ­59.8 ­ 61.7 ­63.6 ­65.5 ­67.6 , ­13.0 ­24.2 ­32.6 ­39.0 ­43.6 ­47.2 ­50.1 ­52.2 ­54.2 ­55.8 ­57.1 ­58.7 ­60.4 ­ 61.7 ­63.7 , 61.7 57.3 53.8 50.8 49.1 47.2 45.6 44.6 43.7 42.9 42.1 41.4 40.5 40.3 39.5 39.0 38.1


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PDF 2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 7749 transistor marking 83
tft 320 240 qvga color 16,7

Abstract:
Text: devices/types available in every country. Please check with local NEC representative for availability and , ) R H-driver G B Controller Hsync Vsync YS 960 lines V-driver DPSH 240 lines LCD panel CS H: 320 × 3 (R,G, B ) V: 240 DPSV PNS Power supply GND Note1 VCC , : Display signals for visual are CLK, CS, YS, R, G and B . Note2: Display signals for syncs are Hsync and , circuit may work, and then this product may not work. Note2: Display (CLK, CS, YS, Hsync, Vsync, R, G, B


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PDF NL3224AC35-06 NL3224AC35-06 DE0203 tft 320 240 qvga color 16,7 JASO THP 100 CCP2E25TE IL-402-30S-S1L-SA 55LHS-3L
nec 3326

Abstract:
Text: -34.8 - 40.4 -46.1 -50.7 -5 4 5 -57.3 -62.3 -65.0 -70.0 S11 B NEC V ce = 2 V , lc = 5 mA, Zo , Japan Q N K Corporation 1994 ^ NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) PARAMETER , mo CURVES / jj O 3 S "0 6 0 p H md $ &. s B P t 3 «3 (T a = 2 5 °C) 5 lc - Collector Currarrt - mA 88 33 SS JJ > 5< 5 « 33Z o m 3 < Q _ I < NEC NOISE , to Base Voltage - V NEC S-PARAMETERS V ce = 1 V , Ic = 1 m A , Z o = 50 SI FREQUENCY MHz 600.00


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PDF 2SC5181 2SC5181 2SC5181-T1 nec 3326 Nec b 616 NF 948
1998 - Not Available

Abstract:
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , in every country. Please check with local NEC Compound Semiconductor Devices representative for , . © NEC Corporation 1998 © NEC Compound Semiconductor Devices 2002 2SC5435 ELECTRICAL CHARACTERISTICS , 88.4 81.7 75.6 68.2 61.7 57.4 53.3 48.0 MAG. 0.050 0.094 0.132 0.160 0.181 0.200 0.216 0.220 0.220 , -58.7 - 61.7 -63.7 -67.3 -71.8 -76.5 -82.0 -90.3 -100.8 -110.5 -118.5 -126.7 Data Sheet


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PDF
1998 - 2SC5010

Abstract:
Text: . Please check with local NEC Compound Semiconductor Devices representative for availability and , Published February 2002 CP(K) Printed in Japan The mark · shows major revised points. © NEC Corporation 1998 © NEC Compound Semiconductor Devices 2002 2SC5435 ELECTRICAL CHARACTERISTICS (TA = , 81.7 75.6 68.2 61.7 57.4 53.3 48.0 0.050 0.094 0.132 0.160 0.181 0.200 0.216 0.220 , 0.219 0.194 0.169 0.157 0.154 0.150 0.147 -23.4 -39.8 -51.9 -58.7 - 61.7 -63.7 -67.3


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PDF 2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk
NEC K 2500

Abstract:
Text: . Drain NE34018-T2 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require , Septem ber 1 9 9 7 N Printed in Japan © NEC Corporation 1996 NEC RECOMMENDED OPERATING CONDITION , CLASSIFICATION RANK 63 64 Idss (mA) 30 to 65 60 to 120 MARKING V63 V64 2 NEC TYPICAL CHARACTERISTICS (Ta , - Associated Gain - dB NEC S-PARAMETER MAG. AND ANG. V ds NE34018 = 2 V, Id = 5 mA , -62.9 -64.7 -66.8 -68.5 -70.8 -72.8 -75.3 -77.2 -79.5 4 NEC AMP. PARAMETERS = 2 V, = 5 mA GAmax


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PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I 6323 GA DS 4069 k 3531 transistor NEC 2905
613 GB 123 CT

Abstract:
Text: docum ent. NEC C orporation does not assum e any lia b ility fo r in frin g e m e n t of patents, c o p , ) Rem ark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sam ple quantity is 50 pcs.) PIN CO N FIG U RA TIO N (Top View) A B S O L U T E M A X IM U M R A T , c u m e n t is s u b je c t to c h a n g e w it h o u t n o tic e . Document No. P11465EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © NEC Corporation 1995 NEC E L E C T


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PDF uPA812T 2SC4227) /xPA812T 613 GB 123 CT
2010 - Luminaire Photometric data

Abstract:
Text: . 2, Groups A, B , C, D Cl. II, Groups F, G Cl. III & Simultaneous Presence Champ® Non-metallic , , especially when carrying up a ladder Certifications and Compliances: · NEC and CEC: Class I, Division 2, Groups A, B C, D Class II, Class III & Simultaneous Presence (Class I, Division 2 and II) · UL , , etc. . S808 Average Luminaire Weight Standard Voltage Ballasts NEC /UL & , multiplier. Footcandle Values for Isofootcandle Lines A B C D E 8' 10' 12' 16' 6L


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PDF
2001 - 2SC4703

Abstract:
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037


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transistor NEC D 822 P

Abstract:
Text: = 25 °C) P aram eter Collector to B ase V oltage Collector to Em itter Voltage Em itter to B ase V , rr n Notel W °C °c PIN C O N N EC TIO N S E: Emitter C: Collector B : Base Tj Tstg Note 1 , © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs , Current - mA GAIN B A NDW IDTH PRODUCT vs. INSERTION GAIN .MAXIMUM GAIN vs. FREQUENCY - Gain , mA 2 NEC 2SC5336 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -8 0 - dB IMa


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PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F 4435 power ic P1093
2001 - transistor NEC B 617

Abstract:
Text: perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 , E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base 6


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PDF 2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor P1093 NEC B 617 NEC 718 4435 power ic 2SC5336-T1 2SC5336 2SC3357
nec 2571

Abstract:
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON , February 1996 P Printed in Japan © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (T a = 25 °C , - Collector to Base Voltage - V - Em itter Current - mA 2 NEC S-PARAMETER V ce , -72 .7 -77 .7 -82.9 3 NEC VcE = 5 V , le = 3 m A 2SC4185 Frequency MHz 100.000 200.000 , -52.3 -57.5 -62.1 -67.0 4 NEC VcE = 10 V, lc = 3 mA 2SC4185 Frequency MHz 100.000 200.000


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PDF 2SC4185 2SC4185 nec 2571 9522 transistor C 4804 transistor nec 2571 4 pin
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