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LT4256-1IS8#PBF Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT4256-1CS8#TRPBF Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT4256-1CS8#PBF Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT4256-1CS8#TR Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT4256-1IS8#TR Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT4256-1IS8#TRPBF Linear Technology LT4256-1 and LT4256-2 - Positive High Voltage Hot Swap Controllers; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

NEC 2561* D 431 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - NE5510379A

Abstract: NE5510379A-T1
Text: . Dies are manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateral-diffusion MOS FET , · Qty 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative , . Not all devices/types available in every country. Please check with local NEC representative for , Drain Efficiency d (%) Power Added Efficiency add (%) VDS = 3.5 V IDset = 600 mA f = 900 MHz , MHz d add 50 0 5 10 15 20 25 30 35 Input Power Pin (dBm) Input


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PDF NE5510379A NE5510379A NE5510379A-T1
2000 - NE5510179A

Abstract: NE5510179A-T1
Text: 1 900 handsets. Dies are manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate , evaluation samples, consult your NEC sales representative. Part number for sample order: NE5510179A , . Please check with local NEC representative for availability and additional information. Document No , Efficiency d (%) Power Added Efficiency add (%) 26 100 1 250 VDS = 3.5 V IDset = 200 mA f = , mA f = 1.9 GHz d 50 add 5 0 10 15 20 25 30 Input Power Pin (dBm


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PDF NE5510179A NE5510179A NE5510179A-T1
2000 - nec 1678

Abstract: No abstract text available
Text: manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateraldiffusion MOS FET) and housed in a , , consult your NEC sales representative. Part number for sample order: NE5500479A Caution Please handle , local NEC representative for availability and additional information. Document No. P15191EJ1V0DS00 (1st , 35 Drain Efficiency d (%) Power Added Efficiency add (%) DRAIN EFFICIENCY, POWER ADDED , ID 750 Drain Current ID (mA) 30 VDS = 3.5 V IDset = 300 mA f = 900 MHz Pout 1 000 d


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PDF NE5500479A NE5500479A nec 1678
NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: or injury to persons or pro p e rty arising fro m a de fe ct in an NEC s e m ico n d u cto r device , redundancy, fire -c o n ta in m e n t, and anti-failure fe a tu re s. NEC devices are cla ssifie d into th e , grade of NEC devices in " Standard" unless o th e rw is e sp e cifie d in NEC 's D a ta s h e e ts or D ata Books. If cu sto m e rs in te n d to use NEC devices fo r applications o th e r than th o s e sp e cifie d fo r Standard quality grade, th e y should contact NEC Sales R epresentative in advance. A


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PDF 2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
nec microcomputer

Abstract: PG-FP3 ID78K0 ID78K4 IE-78001-R-A IE-784000-R V830
Text: product 3-2. Parameter File for NEC Flash Programmer "PG-FP3" 3-3. Driver Software for Interface boards , . Download procedure of Software Development Tool 4-3-1 . Download procedure of Software Development Tool , from NEC Tokyo 6-4.Customers who purchased Software Development Tool product from NEC overseas , (ODS) is the download service of NEC Corporation Microcomputer Software Development Tools and , The services of ODS provides: 1) Information of the latest Software Development Tools for NEC


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PDF 78K/IV 78K/0 78K/0S 78K/III 75X/75XL nec microcomputer PG-FP3 ID78K0 ID78K4 IE-78001-R-A IE-784000-R V830
1999 - NE5510279A-T1

Abstract: No abstract text available
Text: order evaluation samples, consult your NEC sales representative. Part number for sample order , . Please check with local NEC Compound Semiconductor Devices representative for availability and additional , The mark ! shows major revised points. NEC Corporation 1999 NEC Compound Semiconductor Devices , 35 Drain Efficiency d (%) Power Added Efficiency add (%) DRAIN EFFICIENCY, POWER ADDED , ) Pout 25 1 500 Drain Current IDS (mA) 30 VDS = 3.5 V IDset = 400 mA f = 1.8 GHz 2 000 d


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PDF NE5510279A NE5510279A NE5510279A-T1
2000 - NE5510279A

Abstract: NE5510279A-T1
Text: are manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateral-diffusion MOS FET) and , Remark To order evaluation samples, consult your NEC sales representative. Part number for sample order , country. Please check with local NEC representative for availability and additional information. Document , VGS (V) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 35 Drain Efficiency d (%) Power Added , VDS = 3.5 V IDset = 400 mA f = 1.8 GHz 2 000 d 50 20 1 000 add 15 ID 10 5 10 15 20


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PDF NE5510279A NE5510279A NE5510279A-T1
1999 - NE5510279A

Abstract: NE5510279A-T1
Text: manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a , order evaluation samples, consult your NEC sales representative. Part number for sample order , country. Please check with local NEC Compound Semiconductor Devices representative for availability and , Published April 2002 CP(K) Printed in Japan The mark ! shows major revised points. NEC Corporation 1999 NEC Compound Semiconductor Devices 2002 NE5510279A ABSOLUTE MAXIMUM RATINGS (TA = +25°C


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PDF NE5510279A NE5510279A NE5510279A-T1
ZO 107 MA

Abstract: 341S
Text: fe ct in an NEC s e m ico n d u cto r device, cu s to m e r m ust in co rp o ra te s u ffic ie n t sa , re s. NEC devices are cla ssifie d into th e fo llo w in g th re e quality grades: " Standard" , " S , su p p o rt, etc. The quality grade of NEC devices in " Standard" unless o th e rw is e sp e cifie d in NEC 's D a ta s h e e ts or D ata Books. If cu sto m e rs in te n d to use NEC devices fo r applications o th e r than th o s e sp e cifie d fo r Standard quality grade, th e y should contact NEC Sales R


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PDF 2SC5009 2SC5009 ZO 107 MA 341S
1998 - uPB1508GV

Abstract: PRESCALER for DBS tuner PB1508GV HP8665A PB581C UPB1508GV-E1 upb-581c
Text: space. µPB1508GV is manufactured using NEC 's high fT NESATTM IV silicon bipolar process. This process , direction. 1 000 p/reel. Remarks To order evaluation samples, please contact your local NEC sales office , pins CAN µPB581C 30 0.5 to 2.2 4.5 to 5.5 8 pins DIP (300 mil) NEC Original µPB584G 18 0.5 to 2.5 4.5 to 5.5 8 pins SOP (225 mil) NEC Original µPB1508GV 12 , discontinued. INTERNAL BLOCK DIAGRAM IN D CLK IN CLK Q OUT Q AMP SYSTEM APPLICATION


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PDF PB1508GV PB1508GV PB584G uPB1508GV PRESCALER for DBS tuner HP8665A PB581C UPB1508GV-E1 upb-581c
nec b 536 transistor

Abstract: NEC B 536
Text: -35.9 -37.0 -38.9 - 43.1 - 43.1 -43.9 -47.9 -47.0 5 NEC 2SC4958 No part of this document , support, etc. The quality grade of NEC devices in " Standard" unless otherw ise specified in NEC 's D , . 1.25 + 0.1 ORDERING INFORMATION CM PAR T NUM BER Q 3 9 CD d Q U A N T ITY PA C KIN G , responsible NEC person, if you require evaluation sample. Unit sam ple q uantity shall be 50 pcs. (Part No , Japan © NEC Corporation 1995 NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) C H A R A C T E R


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PDF 2SC4958 nec b 536 transistor NEC B 536
S24C MARK

Abstract: tsop 3602 9020 8-pin SOP nec 1251 SIP 400B X10679EJCV0SG00 P28D-100-600A1-1 J 80222 P5VP-340B3-2 thomson 462 t
Text: . 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 , . 7.62 6.4 4.31 MAX. 6.5 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 3.6±0.3 , 9 9 1 8 20.32 MAX. 1 8 24.60 MAX. 20.32 MAX. 4.31 MAX. 7.62 7.62 5.08 , . 6.5 1.1 MIN. 1.0 MIN. 4.31 MAX. 0~15° 0.50±0.10 0.25 M P16C-100-300B-1 18 , MAX. 7.62 6.5 4.31 MAX. 5.08 MAX. 5.08 MAX. 4.31 MAX. 10 1 9 22.86 MAX


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PDF 300mil) 14-pin P8C-100-300B, P14CT-100-300B-1 X10679EJCV0SG00 S24C MARK tsop 3602 9020 8-pin SOP nec 1251 SIP 400B X10679EJCV0SG00 P28D-100-600A1-1 J 80222 P5VP-340B3-2 thomson 462 t
NEC 2581

Abstract: nec 2405 2405 nec 09640
Text: -37.0 -38.9 - 43.1 - 43.1 - 43.9 - 47.9 - 47.0 5 NEC 2SC4954 No part of this document , support, etc. The quality grade of NEC devices in " Standard" unless otherw ise specified in NEC 's D , tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample , Published July 1995 P Printed in Japan © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = , D IT IO N V cb = 5 V , I e = 0 V eb = 1 V , Ic = 0 V ce = 3 V , Ic = 5 m A *1 ft A 75 12 0.3


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PDF 2SC4954 2SC4954-T1 NEC 2581 nec 2405 2405 nec 09640
1999 - NEC D 809 F

Abstract: NE5510179A-T1 VP215 NE5510179A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , are manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateral-diffusion MOS FET) and , evaluation samples, consult your NEC sales representative. Part number for sample order: NE5510179A , . Please check with local NEC Compound Semiconductor Devices representative for availability and , Published April 2002 CP(K) Printed in Japan The mark ! shows major revised points. NEC Corporation


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NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: 0.25 S21 S 22 +90° 1.0 Rmax. - 1 4 NEC S-PARAMETER MAG. AN D ANG. V ds = 2 V , .58 .57 .59 .62 .65 .69 .73 .78 .85 .92 .99 1.06 1.16 1.16 1.18 6 NEC S-PARAMETER MAG. AN D , NE32584C-SL NE32584C-T1 LEAD LENGTH L = 1.7mm MIN. L = 1.0 ± 0 .2 mm MARKING D L = 1.0 ± 0 .2 mm , D ocum ent No. P12275EJ2V0D S00 (2nd edition) (Previous N o.T C -25 1 5 ) Date Published February 1 99 7 N © N E CC orp oration 1994 NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) CHARACTERISTIC


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PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
B581C

Abstract: No abstract text available
Text: m a g e or in ju ry to p e rs o n s or p ro p e rty a rising from a d e fe ct in an NEC s e m ic o n , . NEC d e vice s are c la s s ifie d into the fo llo w in g th re e q u a lity grades: "S ta n d a rd " , 's Data S heets or D ata Books. If cu stom e rs inte n d to use NEC d e vice s for a p p lic a tio n s o ther than th o se sp e cifie d fo r S ta n d a rd q u a lity grade, the y should contact an NEC sa le s , to reduce the mounting space. /¿PB1508GV is manufactured using NEC 's high fr NESATTM IV silicon


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PDF uPB1508GV PB1508GV /iPB1508G PB584G B581C
1999 - ne5500479a-t1

Abstract: No abstract text available
Text: manufactured using NEC 's NEWMOS technology ( NEC 's 0.6 µm WSi gate lateraldiffusion MOS FET) and housed in a , , consult your NEC sales representative. Part number for sample order: NE5500479A Caution Please handle , local NEC Compound Semiconductor Devices representative for availability and additional information , ) Printed in Japan The mark ! shows major revised points. NEC Corporation 1999 NEC Compound , , DRAIN CURRENT vs. INPUT POWER 35 Drain Efficiency d (%) Power Added Efficiency add (%) DRAIN


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PDF NE5500479A NE5500479A ne5500479a-t1
1999 - Not Available

Abstract: No abstract text available
Text: , consult your NEC sales representative. Part number for sample order: NE5500479A Caution Observe , NEC Compound Semiconductor Devices representative for availability and additional information , ! shows major revised points. NEC Corporation 1999 NEC Compound Semiconductor Devices 2002 , Voltage VGS (V) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 35 Drain Efficiency d (%) Power Added , VDS = 3.5 V IDset = 300 mA f = 900 MHz Pout 1 000 d add 50 20 500 15 250 0 30


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PDF NE5500479A NE5500479A
transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: arising fro m a de fe ct in an NEC s e m ico n d u cto r device, cu s to m e r m ust in co rp o ra te s u , anti-failure fe a tu re s. NEC devices are cla ssifie d into th e fo llo w in g th re e quality grades: " , e cifie d in NEC 's D a ta s h e e ts or D ata Books. If cu sto m e rs in te n d to use NEC devices , contact NEC Sales R epresentative in advance. A nti-ra dioactive design is not im p le m e n te d in th is , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA


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PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568
1997 - NEC D 586

Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm NT 407 F power transistor transistor NEC D 986 R13* MARKING 2SC4885 NEC D 882 p TC236
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , d Collector to Base Voltage 3 1 +0.1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) 2 0.3 , Product D Collecter Capacitance Insertion Power Gain SYMBOL MIN. MAX. UNIT ICBO , 150 hFE-DC Current Gain VCE = 5 V 100 in ue d 1 50 0.1 1 10 100 0.1 VCB-Collector to Base Voltage-V VCE = 5 V f = 1 GHz co 4 3 is 2 D 1


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transistor NEC D 582

Abstract: m 9583 transistor
Text: NEC [MEMO] 2SC4569 NEC [MEMO] 2SC4569 NEC 2SC4569 No part of th is d o cu m e n , risin g from a d e fe ct in an NEC se m ico n d u cto r device, cu sto m e rs m ust in corp orate su , ti-fa ilu re fea tu res. NEC de vice s are cla s s ifie d into the fo llo w in g th re e q u a lity , custo m e rs intend to use NEC de vice s fo r a p p lica tio n s oth e r than tho se spe cifie d fo r S tandard qu ality grade, they should con tact an NEC sales re p re se n ta tive in advance. A n ti-ra d io


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PDF 2SC4569 2SC4569 SC-59 transistor NEC D 582 m 9583 transistor
NEC 32bit Processor

Abstract: No abstract text available
Text: d tra d e m a rks or tra d e m a rks o f NEC C o rp o ra tio n in the United S ta te s a n d /o r o , Description The 64-bit Vr4310 (uPD30210) RISC microprocessor is one of NEC 's Vr Series families supporting , , the V r 431 0 uses 50% of the power that its predecessor, the V r4300TM, uses at the same frequency , M aster Clock 97YL-0258C (08/97) Ordering Information Part Number ^ jPD30210G D -100-M BB ^ jPD3021 0G D -133-M BB ^ jPD3021 0G D -167-M BB Operating Frequency 100 MHz 133 MHz 167 MHz Package


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PDF 64-Bit Vr4310 uPD30210 r4310 28-micron NEC 32bit Processor
1997 - transistor NEC D 587

Abstract: transistor NEC D 986 marking R13 R13* MARKING TC-2365 transistor NEC D 586 P10410EJ2V0DS00 230 624 533 392 741 vtvm TC236
Text: = 10 Hz - 1.0 kHz B C M D RG = 100 k 1 - 47 µ F + 1 mA G = 80 dB -15 V , .384 .387 .392 .394 .398 .403 .407 .413 .419 .422 .428 . 431 .434 .439 .446 .449 S21 , .639 .575 .524 .485 .462 .443 . 431 .425 .420 .417 .414 .417 .418 .422 .423 .426 .429 , 34.4 MAG .915 .760 .633 .540 .477 . 431 .399 .375 .358 .345 .336 .325 .319 .313 .311 , 50.6 45.1 43.2 43.1 44.0 44.4 45.2 45.8 46.3 46.2 46.7 46.6 46.4 46.3 46.0 45.5 45.0


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PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 marking R13 R13* MARKING TC-2365 transistor NEC D 586 P10410EJ2V0DS00 230 624 533 392 741 vtvm TC236
c 2688 nec

Abstract: NEC C 3568 transistor c 2335 100R6B nec 2571 sem 2005 640
Text: Available Gain - d B NEC S-PARAMETER V ce 2SC4187 = 1 V, Ic = 1 mA Frequency MHz 100.00 , otherw ise specified in NEC 's D atasheets or Data Books. If custom ers intend to use NEC devices for , (3rd edition) Dale Published February 1996 P Printed in Japan © NEC Corporation 1996 NEC , . AMBIENT TEMPERATURE G a Associated Gain dB N F Noise Figure d B 0.1 1 10 Ta - Ambient , -38 .6 3 NEC VcE = 3 V , le = 1 m A 2SC4187 Frequency MHz 100.00 200.00 300.00 400.00


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PDF 2SC4187 2SC4187 c 2688 nec NEC C 3568 transistor c 2335 100R6B nec 2571 sem 2005 640
1998 - uPB1508GV

Abstract: UPB1508GV-E1 HP8665A PB581C upb-581c PB1508GV upb581
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . µPB1508GV is manufactured using NEC 's high fT NESATTM IV silicon bipolar process. This process uses silicon , /reel. Remarks To order evaluation samples, please contact your local NEC sales office. (Part number , pins CAN µPB581C 30 0.5 to 2.2 4.5 to 5.5 8 pins DIP (300 mil) NEC Original µPB584G 18 0.5 to 2.5 4.5 to 5.5 8 pins SOP (225 mil) NEC Original µPB1508GV 12


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