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NEC 2403 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - NES2527B-30

Abstract: No abstract text available
Text: 24±0.3 provides high output power and high gain in the 2.5 - 2.7 20.4 GHz band. SOURCE , refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC , reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not , , copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has


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PDF NES2527B-30 NES2527B-30
2000 - NES1823P-50

Abstract: gaas mes nec 5703 IDA45
Text: characteristics, and reliability. Reliability and performance uniformity are assured by NEC 's stringent quality , samples, consult your NEC sales representative. Caution Please handle this device at static-free , . Not all devices/types available in every country. Please check with local NEC representative for , 11.4±0.3 R1.2±0.3 5.7±0.3 2.4±0.3 T-86 (UNIT: mm) D2 1.4±0.2 G1, G2 : Gate D1, D2 , conditions. For soldering methods and conditions other than those recommended below, contact your NEC


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PDF NES1823P-50 NES1823P-50 IMT2000 gaas mes nec 5703 IDA45
2003 - NES1823M-45

Abstract: No abstract text available
Text: . Not all devices/types available in every country. Please check with local NEC Compound Semiconductor , edition) Date Published April 2003 CP(K) Printed in Japan © NEC Compound Semiconductor Devices 2003 , 11.4±0.2 G2 2.4±0.3 G1 PIN CONNECTIONS G1, G2: Gate D1, D2 : Drain S : Source , to change without notice. For actual design-in, refer to the latest publications of NEC 's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not


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PDF NES1823M-45 NES1823M-45 IMT2000,
1998 - NEC/LT 7221

Abstract: nec 772 2SC5409 2SC5409-T1 NEC 2706
Text: NEC sales personnel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS , 3.372 3.237 3.106 2.932 2.825 2.706 2.607 2.479 2.403 2.361 S 12 ANG 170.3 161.1 152.8 , consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights , otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC


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PDF 2SC5409 2SC5409-T1 NEC/LT 7221 nec 772 2SC5409 2SC5409-T1 NEC 2706
1999 - D1356

Abstract: RD10UM RD11UM RD12UM RD13UM RD15UM RD16UM RD18UM RD39UM RD6.2UM
Text: every country. Please check with local NEC representative for availability and additional information , 22.55 23.25 25.66 24.03 24.85 25.66 28.90 32.00 35.00 38.00 41.00 Dynamic Impedance ZZ , copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. · NEC , patents, copyrights or other intellectual property rights of NEC Corporation or others. · Descriptions


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PDF RD39UM RD39UM D1356 RD10UM RD11UM RD12UM RD13UM RD15UM RD16UM RD18UM RD6.2UM
1997 - POUT36

Abstract: NES1821B-30 p1209
Text: which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3 band. 20.4 1.0±0.1 , form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability , intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous , an NEC semiconductor device, customers must incorporate sufficient safety measures in its design


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PDF NES1821B-30 NES1821B-30 POUT36 p1209
1997 - NES1417B-30

Abstract: nec 1441
Text: which provides high output power and high gain in the 1.4-1.7GHz 24±0.3 band. 20.4 1.0±0.1 , any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability , intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous , an NEC semiconductor device, customers must incorporate sufficient safety measures in its design


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PDF NES1417B-30 NES1417B-30 nec 1441
2003 - Not Available

Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , all devices/types available in every country. Please check with local NEC Compound Semiconductor , edition) Date Published April 2003 CP(K) Printed in Japan © NEC Compound Semiconductor Devices 2003 , -86M (UNIT: mm) 3.7 MIN. 45° G1 2.4±0.3 G2 5.7±0.2 11.4±0.2 2.1±0.3 S D2 0.9±0.3 20.9±0.3 2.4±0.2 0.6±0.3 , publications of NEC 's data sheets or data books, etc., for the most up-to-date specifications of NEC


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2006 - RD150S

Abstract: RD5.6S RD10S RD11S RD12S RD13S RD15S RD16S RD18S RD3.3S
Text: are available in every country. Please check with an NEC Electronics sales representative for , B 22.86 25.66 B1 22.86 24.03 B2 23.65 24.85 B3 24.45 25.66 RD27S , is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC


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PDF RD150S RD150S RD5.6S RD10S RD11S RD12S RD13S RD15S RD16S RD18S RD3.3S
2001 - transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p transistor NEC D 587 transistor NEC D 586 nec 1021 nec 882 datasheet nec d 882 datasheet NES1720P-140
Text: , thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC , To order evaluation samples, consult your NEC sales representative. Caution Please handle this , local NEC representative for availability and additional information. Document No. P15566EJ1V0DS00 , 17.4±0.3 G1 D2 4.75 MAX. 2.4±0.3 45° PIN CONNECTIONS 1.8±0.2 2.4±0.2 4.0±0.3 , other than those recommended below, contact your NEC sales representative. Soldering Method Partial


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PDF NES1720P-140 NES1720P-140 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p transistor NEC D 587 transistor NEC D 586 nec 1021 nec 882 datasheet nec d 882 datasheet
1998 - nec ps7241

Abstract: NEC 2403 106 PS7241-1B PS7241-1B-E3 PS7241-1B-E4 PS7241-1B-E5 PS7241-1B-F3 PS7241-1B-F4
Text: latest version. Not all devices/types available in every country. Please check with local NEC Compound , The mark · shows major revised points. © NEC Compound Semiconductor Devices 1998, 2003 PS7241 , -1B 1.6±0.1 2.4±0.3 4.4±0.1 5.5±0.1 1.55±0.05 12.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 , NEC 's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales


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PDF PS7241-1B PS7241-1B PS7241-1B-E3, E72422 nec ps7241 NEC 2403 106 PS7241-1B-E3 PS7241-1B-E4 PS7241-1B-E5 PS7241-1B-F3 PS7241-1B-F4
2001 - NEC 743 a

Abstract: transistor NEC D 586 NES1823P-70
Text: assured by NEC 's stringent quality and control procedures. FEATURES · Push-pull type N-channel GaAs , protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution , . Please check with local NEC representative for availability and additional information. Document No , 11.4±0.3 R1.2±0.3 5.7±0.3 2.4±0.3 T-86 (UNIT: mm) D2 1.4±0.2 4.7 MAX. 24.5±0.3 , below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions


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PDF NES1823P-70 NES1823P-70 IMT2000 NEC 743 a transistor NEC D 586
2000 - NEC 952

Abstract: NES1823P-140
Text: assured by NEC 's stringent quality and control procedures. FEATURES · Push-pull type N-channel GaAs , ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , R1.2±0.3 S S D1 8.0 G2 17.4±0.3 G1 D2 4.75 MAX. 2.4±0.3 45° PIN , . For soldering methods and conditions other than those recommended below, contact your NEC sales


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PDF NES1823P-140 NES1823P-140 IMT2000 NEC 952
1998 - PS7241-1A-E5

Abstract: nec ps7241 PS7241-1A PS7241-1A-E3 PS7241-1A-E4 PS7241-1A-F3 PS7241-1A-F4
Text: version. Not all devices/types available in every country. Please check with local NEC Compound , The mark · shows major revised points. © NEC Compound Semiconductor Devices 1998, 2003 PS7241 , 11.9 to 15.4 Outer edge of flange PS7241-1A 1.6±0.1 2.4±0.3 4.4±0.1 5.5±0.1 , latest publications of NEC 's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please


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PDF PS7241-1A PS7241-1A PS7241-1A-E3, E72422 PS7241-1A-E5 nec ps7241 PS7241-1A-E3 PS7241-1A-E4 PS7241-1A-F3 PS7241-1A-F4
2000 - nec 0882

Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
Text: assured by NEC 's stringent quality and control procedures. FEATURES · Push-pull type N-channel GaAs , ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 19.4±0.4 G1 11.4±0.3 R1.2±0.3 5.7±0.3 2.4±0.3 T-86 (UNIT: mm) D2 1.4±0.2 4.7 MAX , recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering


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PDF NES1823P-45 NES1823P-45 IMT2000 nec 0882 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p 1658 NEC
2001 - transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec 0882 nec d 882 p nec 882 datasheet nec 1565 transistor NEC 882 p NEC 882 p nec d 882 datasheet nec d 882 p transistor
Text: characteristics, and reliability. Reliability and performance uniformity are assured by NEC 's stringent quality , evaluation samples, consult your NEC sales representative. Caution Please handle this device at , latest version. Not all devices/types available in every country. Please check with local NEC , 9.7±0.3 R1.2±0.3 S S D1 8.0 G2 17.4±0.3 G1 D2 4.75 MAX. 2.4±0.3 45 , conditions. For soldering methods and conditions other than those recommended below, contact your NEC


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PDF NES2427P-140 NES2427P-140 transistor NEC D 882 p nec d 882 p datasheet nec 0882 nec d 882 p nec 882 datasheet nec 1565 transistor NEC 882 p NEC 882 p nec d 882 datasheet nec d 882 p transistor
2000 - NES2427P-60

Abstract: No abstract text available
Text: . Reliability and performance uniformity are assured by NEC 's stringent quality and control procedures , samples, consult your NEC sales representative. Caution Please handle this device at static-free , . Not all devices/types available in every country. Please check with local NEC representative for , 2.4±0.2 4.0±0.3 31.6±0.3 17.4±0.3 G1 4.75 MAX. 2.4±0.3 45° NES2427P-60 RECOMMENDED , below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions


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PDF NES2427P-60 NES2427P-60
2000 - Nec K 872

Abstract: nec k 813 NES2427P-45
Text: characteristics, and reliability. Reliability and performance uniformity are assured by NEC 's stringent quality , evaluation samples, consult your NEC sales representative. Caution Please handle this device at , latest version. Not all devices/types available in every country. Please check with local NEC , 45° S S D1 19.4±0.4 G1 11.4±0.3 R1.2±0.3 5.7±0.3 2.4±0.3 T-86 (UNIT: mm , and conditions other than those recommended below, contact your NEC sales representative. Soldering


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PDF NES2427P-45 NES2427P-45 Nec K 872 nec k 813
NEC 2706

Abstract: nec 501 t 6229 6pin
Text: NUMBER 2SC5409-T1 Q UANTITY 3 kpcs/reel Rem ark To order evaluation samples, consult your NEC sales , . Document No. P12096EJ1V0DS00 (1 si edition) Dale Published April 1997 N Printed in Japan © NEC Corporation 1997 NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) PARAMETER Collector Cut-off Current , 3.0 Ic - Collector Current - mA V ce - Collector to Emitter Voltage - V NEC f-rvs. Ic , Frequency - GHz 1.0 2.0 2.6 3 NEC S PARAMETER V ce = 2 V Ic = 3 2SC5409 mA FR EQ


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PDF 2SC5409 2SC5409-T1 50-pcs NEC 2706 nec 501 t 6229 6pin
AM/SSC 9500 ic data

Abstract: No abstract text available
Text: . P12032EJ1V0DS00 (1st edition) Date Published June 1997 N Printed in Japan © N E CCorporation 1996 NEC , 7.0 8.5 15.0 dB f = 12 G Hz f = 4 GHz 2 NEC PACKAGE DIMENSIONS 6 pin super minimold , - 4 4 > 1 O 1 5 6 3 NEC TYPICAL CHARACTERISTICS (Ta = 2 5 °C ) NE428M01 , IH 2 4 6 8 10 14 20 30 f - Frequency - GHz 4 NEC Gain Calculations , . FREQUENCY f - Frequency - GHz 5 NEC S-PARAMETER MAG. AND ANG. V ds NE428M01 = 2 V, Id = 10


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PDF NE428M01 NE428M01 200//m AM/SSC 9500 ic data
1997 - NES2527B-30

Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , NES2527B-30 is power GaAs FET which 24±0.3 provides high output power and high gain in the 2.5 - 2.7 , N-CHANNEL GaAs MES FET co Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices , document may be copied or reproduced in any form or by any means without the prior written consent of NEC


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PDF
1999 - Not Available

Abstract: No abstract text available
Text: version. Not all devices/types available in every country. Please check with local NEC representative , ) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.05 2.4±0.3 12.0±0.3 5.5±0.1 1.6±0.1 12.0±0.3 7.4±0.1 , may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. · NEC , patents, copyrights or other intellectual property rights of NEC Corporation or others. · Descriptions of


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PDF PS7241-1B PS7241-1B PS7241-1B-E3, E72422
transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , . * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall , u s No. T D -2 4 1 2 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter , 100 FB R37 80 to 160 GB R38 125 to 250 2 NEC TYPICAL CHARACTERISTICS (Ta = 25 °C) TOTAL


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PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
1997 - NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4227) Document No. P10371EJ2V0DS00 (2nd edition) (Previous No. TC- 2403 ) Date , document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC , patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC


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PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
1997 - NES1821B-30

Abstract: NEC D 809 F
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3 band. 20.4 , consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights , otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC


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