The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
NE85633-A California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3
NE85633-T1B-A California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3
NE85633-R24-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency
NE85619-T1-A California Eastern Laboratories (CEL) Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
NE85619-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency
NE856M02-AZ California Eastern Laboratories (CEL) Bipolar Transistors NPN Low Distort Amp

NE856 datasheet (94)

Part Manufacturer Description Type PDF
NE856 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85600 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85600 NEC NPN silicon high frequency transistor. Original PDF
NE85600 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85600 California Eastern Laboratories UHF/Microwave NPN BJT Scan PDF
NE85600 NEC 7 GHz, 30 V, NPN silicon high frequency transistor Scan PDF
NE85618 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85618 NEC Semiconductor Selection Guide Original PDF
NE85618-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343 Original PDF
NE85618-T1 NEC NPN silicon high frequency transistor. Original PDF
NE85618-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85618-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343 Original PDF
NE85619 NEC Semiconductor Selection Guide Original PDF
NE85619 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85619-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ MINIMOLD Original PDF
NE85619-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 1GHZ SMD Original PDF
NE85619-T1 NEC NPN silicon high frequency transistor. Original PDF
NE85619-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE85619-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF
NE85630 NEC Semiconductor Selection Guide Original PDF

NE856 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
UPA833TF

Abstract: UPA831TF UPA802T UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Text: NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01 , D D D D D D D D D D D D D D D D D D D D D D D 0 D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA833TF UPA831TF UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
NE856

Abstract: NE85635/CEL NE85600 2SC5011 2SC5006 2SC4226 NEC NE85635 NE85632 NE AND micro-X Micro-X Marking 865
Text: Laboratories NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP , and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632 / 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain


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PDF NE856 NE856 NE85635/CEL NE85600 2SC5011 2SC5006 2SC4226 NEC NE85635 NE85632 NE AND micro-X Micro-X Marking 865
2006 - 016p

Abstract: NE85633-T1B-A NEC 2501 LE 737 NEC NE85635 transistor NEC b 882 p mje 1303 NE85600 NE85619 NE856 2SC5011
Text: NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION , 5 NE85632 AND NE85634 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 10 NE85633 NE85635 VCE = 10 V IM3 7 -70 VCE = 10 V VO = 100 dBV/50 RG = RL = 50 NE85632 NE85634 , Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP


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PDF NE856 016p NE85633-T1B-A NEC 2501 LE 737 NEC NE85635 transistor NEC b 882 p mje 1303 NE85600 NE85619 2SC5011
BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Text: (Units in mm) ORDERING INFORMATION PACKAGE OUTLINE 35 (MICRO-X) PART NUMBER NE85600 NE85618-T1 NE85619-T1 NE85630-T1 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 . 2.55±0.2 +0.06 QUANTITY 100 , CHARACTERISTICS (T a = 2 5 X ) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 E IA J1 REG ISTER ED NUMBER , f = 2 GHz UNITS GHz dB dB dB dB dB dB NE85633 2SC3356 33 MIN TYP MAX 7.0 1.4 2.0 NE85634 2SC3357 34 MIN TYP 6.5 1.4 MAX NE85635 2SC3603 35 MIN TYP MAX 7.0 NE85639 /39R 2SC4093 39 MIN


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PDF NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
transistor NEC D 882

Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Text: REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fr NE85600 00 (CHIP) NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP , dB dB dB dB dB dB 50 UA NE85634 2SC3357 34 MIN TYP 6.5 2.0 1.4 MAX MIN NE85635 2SC3603 35 TYP , ) Collector Current, lc(mA) NE856 SERIES TYPICAL PERFORMANCE CURVES (ta =25 c) NE85634 FORWARD INSERTION , ) CollectorCurrent, lc(mA) NE856 SERIES TYPICAL PERFORMANCE CURVES (Ta=25°c) NE85633 FORWARD INSERTION GAIN


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PDF NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
Text: SPECIFICATIONS (Ta = 25°c) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , cu = 25°q PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , Ambient Temperature, Ta (°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE


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PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
LB 122 transistor To-92

Abstract: Mje 1532 NE85632 NE85600 NE856 NE85635 NE85618 NE85619 NE85630 2SC5006
Text: NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION , 5 NE85632 AND NE85634 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 10 NE85633 NE85635 VCE = 10 V IM3 7 -70 VCE = 10 V VO = 100 dBµV/50 RG = RL = 50 NE85632 NE85634 , Emitter Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34


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PDF NE856 NE85600 24-Hour LB 122 transistor To-92 Mje 1532 NE85632 NE85600 NE856 NE85635 NE85618 NE85619 NE85630 2SC5006
2003 - MJE 1532

Abstract: sot-89 Marking LB 931 NE85630 transistor bf 760 NEC NE85635 2SC5006 NE856 NE85635 packaging schematic NE85618 NE85619
Text: Laboratories NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP , and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632 / 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain


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PDF NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 MJE 1532 sot-89 Marking LB 931 NE85630 transistor bf 760 NEC NE85635 2SC5006 NE85635 packaging schematic NE85618 NE85619
ne666

Abstract: NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 NE856 ka13 NEB5600 UPA810T
Text: tor the NE856C0 * xJ NE85635 > «20CTC TYPICAL PERFORMANCE CURVES (Ta= 25X) NE85633 A N O NE86635 T , N E 85618 NE66619 NE85630 NE85632 2 S C 422 G 2SC5006 2SC33&S 2SC5011 30 32 00 (CHIP) 18 19 SYM BOLS , METALLIZATION · LOW COST CO (C H IP ) NE856 SERIES 3 5 (M IC R O -X ) DESCRIPTION Tbo NE856 series ot , linearity. The NE856 series oilers excellent performance and rottabibty at low cost. This is achieved b y , process. The NE856 sorie« rs avadablo in chip form and a Micro-x package foe high frequency applications


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PDF NE856 NE856C0 NE85635 20CTC NE85633 NE86635 NE8S632 ne666 NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 ka13 NEB5600 UPA810T
2sc3357

Abstract: 973-120 NE85600 NE856 NE AND micro-X Micro-X Marking 865 marking K "micro x" 2SC5011 2SC5006 transistor marking 551 sot-89
Text: NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 , NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632 / 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain , dB dB 11.5 NE85635 NE85639 /39R 2SC3603 2SC4093 35 39 MIN TYP MAX MIN TYP MAX 6.5 2.0


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PDF NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 2sc3357 973-120 NE85600 NE AND micro-X Micro-X Marking 865 marking K "micro x" 2SC5011 2SC5006 transistor marking 551 sot-89
2005 - transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Text: : 1. Embossed tape 12 mm wide. ORDERING INFORMATION (Pb-Free) PART NUMBER NE85600-A NE85618-T1-A NE85619-T1-A NE85630-T1-A NE85632-A NE85633-T1B-A NE85634-T1-A NE85635-A NE85639-T1-A NE85639R-T1-A QUANTITY , (Solder Contains Lead) PART NUMBER NE85600 NE85618-T1 NE85619-T1 NE85630-T1 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 QUANTITY 100 3000 3000 3000 1 3000 1000 1 3000 3000 PACKAGING , Product, fT (GHz) VCE = 10 V 7 NE85633 NE85635 IM3 -70 5 NE85632 NE85634 IM2, IM3 (dB


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PDF NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A
NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 NE856 2SC3357 2sc3356 NE85635
Text: NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 , NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 , 150 Ambient Temperature, Ta (°C) 200 E. £ w a § a. I NE85632 AND NE85634 TOTAL POWER , NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST DESCRIPTION AND APPLICATIONS The NE856 series


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PDF NE856 NEC NE85635 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 2SC3357 2sc3356 NE85635
NE8563S

Abstract: E8560 SL 0380 R 2SC 2625 transistor 321 CJ 7121 ic 7442 NE85634-F transistor 2SC 1222 transistor NEC D 586 ic SL 1626
Text: LS fT < t * = 2 5 -c ) N E85600 00 (C H IP ) NE85618 2SC5011 18 NE85619 2S C 5006 19 NE85630 2S C , 0.55 MIN TYP 7.0 1.4 2.0 MAX MIN NE85634 2SC 3357 34 TYP 6.5 1.4 M AX MIN NE8563S 2SC3603 35 TY P , (mA) 3-156 NE856 SERIES TYPICAL PERFORMANCE CURVES NE85634 F O R W A R D IN S E R , 177 -141 -118 -92 009 0.15 0.52 0.67 0.70 3-158 NE856 SERIES NE85632 TYPICAL NOISE PARAMETERS , 2.8 3-162 NE856 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (Ta zs-q NE85630 VCE =


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PDF NE856 NE8563S E8560 SL 0380 R 2SC 2625 transistor 321 CJ 7121 ic 7442 NE85634-F transistor 2SC 1222 transistor NEC D 586 ic SL 1626
2SC3357

Abstract: 2sc3355 NE8563S
Text: NUMBER PACKAGE OUTLINE NE85600 NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 , NE85600 NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 dB dB , °C/W 0.65 NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP MAX MIN TYP MAX 7.0 1.4 2.0 6.5 1.4 2.1 9 10 , °C/W 0.65 NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP MAX MIN TYP MAX 7.0 1.4 2.0 6.5 1.4 2.1 9 10 , result in permanent damage. 2 Maximum Tj for the NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE


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PDF NE856 OT-89) 2SC3357 2sc3355 NE8563S
BJT BF 331

Abstract: NE85632 NE85630 NE85619 NE85618 NE85600 NE856 2SC5011 2SC5006 Sot-23 MARKING 702
Text: NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , 0.3 Frequency, f (GHz) 2 5 10 -80 NE85633 NE85635 VCE = 10 V 1 NE85632 AND , 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain, |S21E|2 (dB , Emitter Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85633 AND NE85635 TOTAL POWER DISSIPATION


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PDF NE856 NE85600 24-Hour BJT BF 331 NE85632 NE85630 NE85619 NE85618 NE85600 NE856 2SC5011 2SC5006 Sot-23 MARKING 702
NE46734

Abstract: NE46134 NE685 NE681 1817 transistor NE734 NE021 ne85634 NE680 NE856
Text: Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT (dB) NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB , 26.7 NE46134 10 V, 50 mA, P1dB = 24.4 NE46134 10 V, 30 mA, P1dB = 22.2 NE46134 30 NE85634 NE46734 25 34 56 E8 N 20 34 67 E4 N 15 4 13 46 NE NE85634 10 NE46734


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PDF NE734 NE856 NE685 NE021 NE681 NE46734 NE46134 NE685 NE681 1817 transistor NE734 NE021 ne85634 NE680 NE856
Not Available

Abstract: No abstract text available
Text: UTUNE SYMBOLS fT NF Ga |S21E|2 hFE NE85600 NE85618 2SC5011 18 00 (CHIP) NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 PARAMETERS AND CONDITIONS UNITS , . Maximum T j for the NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (T a = 25° c ) NE85633 AN D N E85635 TOTAL POWER DISSIPATION vs. AMBIENTTEMPERATURE NE85632 AND NE85634 TOTAL POWER , 1.4 dB dB MIN 11.5 TYP NE85635 2SC3603 35 MAX MIN TYP NE85639 /39R


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PDF NE856 b4E7525 00LS7S3
uPA63

Abstract: UPA827TF UPA831TF NE685
Text: - 3-8 3-50 3-70 3-193 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 , NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 , Screening Page Number NE46100 NE46134 NE461M02 NE663M04 NE85634 NE856M02 2.0 1.0 1.0 2.0 1.0 1.0 , D D D D D D D D D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 3-235 3-238 3-243


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685
NE88933

Abstract: NFC46 ne85639 NE681 NE68039 NE68035 NE68033 NE64535 NE21935 NE85635/CEL
Text: 14 8 20 1.0 15 9.0 8 20 50 100 250 10 65 0.20 NE856 NE85630 3 7 10 12 3 7 1 0 90 45 3 5 40 110 250 12 100 015 150 NE85633 10 20 1.0 12 10 7 10 16 9 10 20 1.0 115 70 10 20 50 120 300 12 100 0.20 NE85635 10 20 20 12 10 7 20 21 10 10 20 20 90 70 10 20 50 120 300 12 100 0.58 NE85639 10 20 10 15 10 7 , 24 12 10 50 05 12 5 40 10 50 30 100 200 18 150 2 00 NE856 NE85634 10 20 1.0 11 10 40 1.0 1.8 9 10


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PDF NE21935 NE645 NE64535 Nh680 NL68030 NE416 NE41635 NE461 NE46134 NE46734 NE88933 NFC46 ne85639 NE681 NE68039 NE68035 NE68033 NE85635/CEL
8003* transistor

Abstract: transistor DB 12 NE856 S21E UPA810T UPA810T-T1 npn dual emitter RF Transistor
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package · LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz · HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz · EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE HIGH COLLECTOR CURRENT: 100 mA · UPA810T PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 1 6 2 5 3 0.65 4 2.0 ± 0.2 0.2 (All Leads


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PDF NE856 UPA810T UPA810T UPA810T-T1, 24-Hour 8003* transistor transistor DB 12 S21E UPA810T-T1 npn dual emitter RF Transistor
2000 - 2SC5614

Abstract: NE856 NE856M13 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS (Units in mm , 100 mA 2 1 0.1 0.1 DESCRIPTION +0.1 0.15 ­0.05 0.2 0.2 The NE856M13 transistor , style "M13" package is ideal for today's portable wireless applications. The NE856 is also available , CONDITIONS NE856M13 2SC5614 M13 UNITS MIN GHz 3 fT Gain Bandwidth at VCE = 3 V, IC = 7 , Eastern Laboratories NE856M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS


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PDF NE856M13 NE856M13 24-Hour 2SC5614 NE856 S21E
1999 - NE681

Abstract: NE856 S21E UPA831TC UPA831TC-T1 amplifier TRANSISTOR 12 GHZ
Text: DESCRIPTION 0.11+0.1 The UPA831TC contains one NE856 and one NE681 NPN high frequency silicon bipolar


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PDF OT-363 UPA831TC 24-Hour NE681 NE856 S21E UPA831TC UPA831TC-T1 amplifier TRANSISTOR 12 GHZ
1999 - NE856

Abstract: S21E UPA810T UPA810TF chip die npn transistor
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm · LOW HEIGHT PROFILE: Just 0.60 mm hight · HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 1 6 2 5 3 0.65 DESCRIPTION 4 2.0 ± 0.2 The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low


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PDF UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor
8003* transistor

Abstract: npn dual emitter RF Transistor UPA801T "ultra low noise" NPN transistor NE856 S21E UPA801T-T1 97 transistor
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package · LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz · HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz · HIGH COLLECTOR CURRENT: 100mA PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 DESCRIPTION 1 6 2 5 3 0.65 4 2.0 ± 0.2 The UPA801T is two NPN high frequency silicon epitaxial


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PDF UPA801T NE856 100mA UPA801T UPA801T-T1, 24-Hour 8003* transistor npn dual emitter RF Transistor "ultra low noise" NPN transistor S21E UPA801T-T1 97 transistor
transistor d 13009

Abstract: transistor ap 7686 ic 7483 ap 6928
Text: -PIN THIN-TYPE SMALL MINI MOLD PACKAGE 2 DIFFERENT BUILT-IN TRANSISTORS (Qi: NE856 , 02: NE685) 0 .6 ± 0.1 T , -33.11 -35.72 -42.08 -51.14 UPA832TF BUILT-IN TRANSISTORS Q1 3-pin sm all mini mold part No. NE856


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PDF UPA832TF NE856, NE685) PA832TF PA832TF-T1 24-Hour transistor d 13009 transistor ap 7686 ic 7483 ap 6928
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