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NE68518-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343
NE68518-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343

NE68518 datasheet (7)

Part Manufacturer Description Type PDF
NE68518 NEC Semiconductor Selection Guide Original PDF
NE68518 NEC NPN silicon high frequency transistor. Original PDF
NE68518-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
NE68518-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68518-T1 NEC Original PDF
NE68518-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
NE68518-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

NE68518 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
0066E

Abstract: 014e1
Text: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68518 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS , LBX LCX LEX NE68518 0.13e-12 0.14e-12 1.55e-9 1.25e-9 0.94e-9 0.066e-12 0.44e-12 0.36e-12 0.18e-9


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PDF NE68518 7e-16 9e-13 4e-12 18e-12 2e-12 NE68518 13e-12 14e-12 0066E 014e1
prime 15005

Abstract: pa 4010 IC NE68519 ne665 T2B SOT23 NE685
Text: . Collector 4 Emitter ORDERING INFORMATION T83 is the Part Number Identifier PART NUMBER NE68518-T1 , T2 , ~ 2s°q PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS tr NE68518 2SC5015 18 , ABSOLUTE MAXIMUM RATINGS1(t a PART NUMBER SYMBOLS VCBO VCEO Vebo Ic Tj T stg zs - q NE68518 UNITS V V V , 13.0 2000 1.48 8.2 3000 1.74 5.5 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C


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PDF NE685 OT-143) NE68518-T1, NE68519-T1 NE68530-T1 NE68533-TIB, NE68539-T1, prime 15005 pa 4010 IC NE68519 ne665 T2B SOT23
R47 marking

Abstract: U73-U74 NE85618 NE25118 NE68818 NE68718 R27 marking NE68518 NE68118 NE68018
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER MARKING NE25118 U71, U72, U73, U74 +0.10 0.15 -0.05 PART NUMBER MARKING NE68618 NE68718 V63, V64 NE68018 R46, R47, R48 NE68118 R36, R37, R38 NE68518 T86


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PDF NE25118 NE68618 NE68718 NE68018 NE68118 NE68518 NE68818 NE34018 NE76118 NE85618 R47 marking U73-U74 NE85618 NE25118 NE68818 NE68718 R27 marking NE68518 NE68118 NE68018
85500 transistor

Abstract: NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 c 5929 transistor BR 13009 NE685 CCE 7100
Text: 5° 5° 0 to 0.1 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A , 143 STYLE) 39R (SOT 143R STYLE) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50 VCE = , °C) NE68518 , NE68530 D.C. POWER DERATING CURVE NE68519 D.C. POWER DERATING CURVE Total Power Dissipation , ° 2 S21 0.1 GHz S12 4 GHz 315° 3 NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY GHz 0.1 0.4 0.8


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PDF NE685 8539R NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 85500 transistor NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 c 5929 transistor BR 13009 CCE 7100
cce 7100

Abstract: 85500 transistor 2SC4955 2SC4959 cce 7100 1027 2SC5015 NE68518 NE68519 NE68530 NE68533
Text: . Emitter 4. Base EXCLUSIVE NORTH AMERICAN AGENT FOR PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 , CHARACTERISTICS (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 , parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz , Dissipation, PT (mW) Total Power Dissipation, PT (mW) NE68518 , NE68530 D.C. POWER DERATING CURVE 200 , SCATTERING PARAMETERS (TA = 25°C) NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY S11 S21 GHz MAG


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PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor 2SC4955 2SC4959 cce 7100 1027 2SC5015 NE68518 NE68519 NE68530 NE68533
2002 - cce 7100

Abstract: 85500 transistor cce 7100 0913 br 8764 transistor d 13009 BF109 P 13009 0803 NE685 539r NE68519
Text: 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 , EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) MAG ANG Rn , ) NE68518 , NE68530 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 0 200 , -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315° (VCE = 2.5 V, IC = 1 mA) S11


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PDF NE685 cce 7100 85500 transistor cce 7100 0913 br 8764 transistor d 13009 BF109 P 13009 0803 NE685 539r NE68519
HE 85500

Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 mje 13009 E 13009 L
Text: r ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 Note: 1. Lead material: Cu Lead plating , =25»o PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 , these parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS FREQ. (MHz) N F , 0.26 0.22 3-94 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C. POWER DERATING , °c) 180' Coordinates in Ohms Frequency in GHz (Vce = 2.5 V, Ic = 1 mA) 270' NE68518 VCE = 0.5 V, Ic


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PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 HE 85500 st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 mje 13009 E 13009 L
014e1

Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic transistor j 13009 ha 14052 bf 0252 CD 5888 CB NE68530
Text: 1.0 ORDERING INFORMATION * 0 to 01 PART NUMBER NE68518-T1 NE68519-T1 N E68530-T1 Note: 1. Lead , BER PACKAGE OUTLINE SYMBOLS fr N F min G nf NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 , Note: 1.Operation in excess of any one of these parameters may result in permanent damage. NE68518 , 0.22 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C. POWER DERATING CURVE (t a = 25 , PARAMETERS (T a = 25°c ) Coordinates in Ohms Frequency in GHz (Vce = 2.5 V, lc = 1 mA) 270" NE68518 V


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PDF NE685 NE68518-T1 NE68519-T1 E68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour 014e1 cce 7100 transistor d 13009 br 8764 CD 5888 cb ic transistor j 13009 ha 14052 bf 0252 CD 5888 CB NE68530
2006 - cce 7100

Abstract: transistor d 13009 br 8764 NE685 tr 13009 NE68519 cce 7100 1027 2SC5015 2SC5010 NE68533
Text: 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A , 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) MAG ANG Rn , ) NE68518 , NE68530 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 0 200 , -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315° (VCE = 2.5 V, IC = 1 mA) S11


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PDF NE685 cce 7100 transistor d 13009 br 8764 NE685 tr 13009 NE68519 cce 7100 1027 2SC5015 2SC5010 NE68533
NE68018

Abstract: No abstract text available
Text: SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519


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PDF OT-23) NE68018
NE68019

Abstract: NE68839 NE68018 NE68719
Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - " VCE (V) lc (m A) , ft. -.H r* TYP (dB) ,-fc « Wf, 10.0 9.0 12.0 15 13 10 6.5 & 100 100 110 100 100 120 120 35 65 30 10 30 100 100 MAX 4 PIN SUPER MINI MOLD NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 1.0 1.0 2.0 2.0 2.0 2.0 1.0 1 2.5 2.5 1 1 3 2.5 SOT-343 STYLE 1 3 3 3 3 7 3 1.5 1.1 1.5 1.5 1.3 1.5 1.4 12.0 13.0 8.5 g 8 8 11.0 1.0 2.5 2.5 1 1 3 2.5 1 3 3 3 3 3 3 12.5 16.0 12.0 13 11 9


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PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719
cce 7100

Abstract: 85500 transistor NE685 NE68530 br 8764 2SC4959 2SC5015 BJT IC Vce cce 7100 1053 NE68519
Text: PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 , . ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 , these parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , (mW) Total Power Dissipation, PT (mW) NE68518 , NE68530 D.C. POWER DERATING CURVE 200 180 , -.6 -.8 -1 225° 3 -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315


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PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor NE68530 br 8764 2SC4959 2SC5015 BJT IC Vce cce 7100 1053 NE68519
2010 - ic isl 887

Abstract: 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
Text: Tr. 2SC5015 ( NE68518 ) 2SC5185 (NE68718) etc. 2SC5369 (NE696M01) PC8112TB DEMOD , SiGe HBT - - 2SC5004(NE58219) 2SC5011(NE85618) 2SC5801(NE851M13) 2SC5015( NE68518 ) 2SC5185


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PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
1999 - X13769XJ2V0CD00

Abstract: PC1099 2SC4703 R78K0 PC1891A 2SC470-3 NE3210 PD784036 PC2781GR UPC1316
Text: µ PC2795GV I 0° 90° LPF Q LPF Tr. 2SC5015 ( NE68518 ) AGCIC µ PC2782GR PLL I/Q µ


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PDF X13769XJ2V0CD00 PD78064Y, 780308Y PD780205 PD7500× PD78064, X13769XJ2V0CD00 PC1099 2SC4703 R78K0 PC1891A 2SC470-3 NE3210 PD784036 PC2781GR UPC1316
sot 326

Abstract: 338 sot-23 NE68530 NE02139
Text: Low Noise Bipolar Transistors Ì I TEST Part ' *- i NHG* Vcc M SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE85634 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0


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PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 sot 326 338 sot-23 NE68530 NE02139
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: -92) 32 32 D D 3-11 3-157 SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE85618 NE68019 NE68119 , PIN SUPER MINI MOLD NE68018 NE68118 NE68518 NE85618 1 2.5 2.5 2.5 SOT- 343 STYLE 1 3 3 3 1.5 1.1


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
uPA63

Abstract: UPA827TF UPA831TF NE685
Text: Description Pkg. Cotte Screening Pag« Number SURFACE MOUNT PLASTIC NE68Q18 NE68118 NE68518 NE68618 , NE68118 NE68518 NE68618 NE68718 NE68818 NE8S618 NE6801S NE68119 NE68519 NE68619 NË68719 NE68819 NE85619


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685
2003 - marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
Text: NE68539E NE68518 NE678M04 12.0 NE68533 NE68530 NE68519 NE685M03 14.0 14.5 15.0 , .9 NE68518 9 6 2.0 150 3 10 65 175 12.0 3 10 2.0 11 3 3 2.0


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: NE58219 NE68718 NE38018 T83 NE68618 V63, V64 R36, R37, R38 NE68518 NE34018 30


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
NE68018

Abstract: 814T
Text: NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 1.0 1.0 2.0 2.0 2.0 2.0 1.0 1 2.5 2.5 1 1 3 2.5


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PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T
ic HS 2272

Abstract: tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 D 13009 K 8m80 0732 gi 9405
Text: NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518.NE68530 D.C. POWER DERATING CURVE (t a = 25°c ) NE68519 , (SOT-143) OUTLINE 39R RECOMMENDED P.C.B. LAYOUT 2 .4 ORDERING INFORMATION PARTNUMBER NE68518-T1 1 , REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 , VCEO NE68518 UNITS V V V mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30 , SERIES TYPICAL SCATTERING PARAMETERS (T a=25°q NE68518 V ce = 0.5 V, Ic = 0.5 m A


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PDF NE685 NEG85 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 ic HS 2272 tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 D 13009 K 8m80 0732 gi 9405
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NE68433 NE68430 NE68439E NE68418 NE68419 NE677M04 NE68533 NE68530 NE68539E NE68518 NE68519 NE685M03 , 2.5 Fig.16 NE68518 9 6 2.0 150 3 10 65 175 12.0 3 10 2.0


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
85500 transistor

Abstract: st 85500 LM 7209 P 13009 0708 P 13009 0803 transistor d 13009 0384 lm 7803 irl 3034 transistor c 2026
Text: ES NE68518.NE68530 D.C. POWER DERATING CURVE < t a = 2s o NE68519 D.C. POWER DERATING CURVE E. £ , NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 3-99 1. 2. 3. 4. Emitter Collector , MAXIMUM RATINGS1 (Ta = 25°C) PARTNUMBER SYMBOLS VCBO VCEO V ebo Ic Tj T stg NE68518 UNITS V V V mA °C , TYPICAL SCATTERING PARAM ETERS NE68518 "- - - ' » - FREQUENCY GHz 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0


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PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 85500 transistor st 85500 LM 7209 P 13009 0708 P 13009 0803 transistor d 13009 0384 lm 7803 irl 3034 transistor c 2026
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: 13.0 2.5 3 16.0 9.0 100 65 NE68518 2.0 2.5 3 1.5 8.5 2.5


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
2010 - UPC8236

Abstract: 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
Text: device list Block LNA Function Discrete Tr. Type Name Feature 2SC5015( NE68518 ) Si , PLL VCO Oscillator + Buffer 2SC5801(NE851M13) Buffer 2SC5015( NE68518 ), 2SC5185(NE68718


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PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
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