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NE68519-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SMD
NE68518-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343
NE68539-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT-143
NE68518-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343
NE68519-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency
NE68539-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT-143
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NE685 datasheet (50)

Part Manufacturer Description Type PDF
NE685 NEC Original PDF
NE68518 NEC Semiconductor Selection Guide Original PDF
NE68518 NEC NPN silicon high frequency transistor. Original PDF
NE68518-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
NE68518-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68518-T1 NEC Original PDF
NE68518-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
NE68518-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68519 NEC Semiconductor Selection Guide Original PDF
NE68519 NEC NPN silicon high frequency transistor. Original PDF
NE68519-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD Original PDF
NE68519-T1 NEC Original PDF
NE68519-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SMD Original PDF
NE68519-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68530 NEC Semiconductor Selection Guide Original PDF
NE68530 NEC NPN silicon high frequency transistor. Original PDF
NE68530-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
NE68530-T1 NEC Original PDF
NE68530-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF
NE68530-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

NE685 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
UPA833TF

Abstract: UPA831TF UPA802T UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Text: D D D D D D D D D D D D D D D D D D D D D D D 0 D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 S il 344 346 347 348 349 350 351 352 353 354 355 363 364 371 365 366 366 367 367 372 372 , 360 NE685 NE686 NE687


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA833TF UPA831TF UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
85500 transistor

Abstract: NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 c 5929 transistor BR 13009 NE685 CCE 7100
Text: 5° 5° 0 to 0.1 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape & Reel , 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 , °C) NE68518 , NE68530 D.C. POWER DERATING CURVE NE68519 D.C. POWER DERATING CURVE Total Power Dissipation , Temperature, TA (C°) Ambient Temperature, TA (C°) NE68533 , NE68539 D.C. POWER DERATING CURVE 12


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PDF NE685 8539R NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 85500 transistor NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 c 5929 transistor BR 13009 CCE 7100
UPA827TF

Abstract: UPA833TF NE685 UPA814T
Text: 1 1 (V) Ic (mA) UHU '* m 30 10 30 30 10 30 100 100 w m NE685 NE686 NE687 NE685 NE686 , 11 12 13 11 4.5 12 12 4.5 110 100 100 120 110 110 120 30 10 30 100 30 30 100 NE685 NE686 NE687 364 371 365 366 366 370 370 * 4^ NE688 NE685 NE685 NE688 Noise Figures and Associated Gain vs


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PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF
2002 - cce 7100

Abstract: 85500 transistor cce 7100 0913 br 8764 transistor d 13009 BF109 P 13009 0803 NE685 539r NE68519
Text: 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape & Reel , EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS , 1.10 1.19 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS


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PDF NE685 cce 7100 85500 transistor cce 7100 0913 br 8764 transistor d 13009 BF109 P 13009 0803 NE685 539r NE68519
HE 85500

Abstract: st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 mje 13009 E 13009 L
Text: r ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 Note: 1. Lead material: Cu Lead plating: PbSn NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape , =25»o PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 PARAMETERS AND , 0.26 0.22 3-94 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C. POWER DERATING


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PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 HE 85500 st 85500 85500 transistor EN 123400 ha 14052 cce 7100 HE 85500 TRANSISTOR bf 0252 mje 13009 E 13009 L
014e1

Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic transistor j 13009 ha 14052 bf 0252 CD 5888 CB NE68530
Text: 1.0 ORDERING INFORMATION * 0 to 01 PART NUMBER NE68518-T1 NE68519-T1 N E68530-T1 Note: 1. Lead material: Cu Lead plating: PbSn NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 , BER PACKAGE OUTLINE SYMBOLS fr N F min G nf NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX , 0.22 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C. POWER DERATING CURVE (t a = 25


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PDF NE685 NE68518-T1 NE68519-T1 E68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour 014e1 cce 7100 transistor d 13009 br 8764 CD 5888 cb ic transistor j 13009 ha 14052 bf 0252 CD 5888 CB NE68530
cce 7100

Abstract: 85500 transistor 2SC4955 2SC4959 cce 7100 1027 2SC5015 NE68518 NE68519 NE68530 NE68533
Text: . Emitter 4. Base EXCLUSIVE NORTH AMERICAN AGENT FOR PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QTY 3K/REEL 3K/REEL 3K/REEL 3K/REEL 3K/REEL 3K/REEL Note: 1 , NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 , 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS (TA = 25 , NE685 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68519 D.C. POWER DERATING CURVE Total Power


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PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor 2SC4955 2SC4959 cce 7100 1027 2SC5015 NE68518 NE68519 NE68530 NE68533
uPA63

Abstract: UPA827TF UPA831TF NE685
Text: NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R , NE68118 NE68518 NE68618 NE68718 NE68818 NE8S618 NE6801S NE68119 NE68519 NE68619 NË68719 NE68819 NE85619 , D D D D D D D D D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 3-235 3-238 3-243


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685
2006 - cce 7100

Abstract: transistor d 13009 br 8764 NE685 tr 13009 NE68519 cce 7100 1027 2SC5015 2SC5010 NE68533
Text: 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 , 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 SYMBOLS , 1.10 1.19 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS


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PDF NE685 cce 7100 transistor d 13009 br 8764 NE685 tr 13009 NE68519 cce 7100 1027 2SC5015 2SC5010 NE68533
NE685

Abstract: No abstract text available
Text: RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 2.5 V, IC = 1 mA to 20 mA Date: 08/03 Q1 NE685 , ) AF (2) Q1 NE685 0.34 0.5 0 0.75 0 0.1 2.0e-12 6 3 0.005 0 1.0e-9 1.11 0 3 0 1 Q2 NE851 0.14 0.5 0


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PDF UPA862TD 6e-12 855e-12 2e-12 73e-9 NE685 0e-16 90e-13 4e-12 18e-12
cce 7100

Abstract: 85500 transistor NE685 NE68530 br 8764 2SC4959 2SC5015 BJT IC Vce cce 7100 1053 NE68519
Text: PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 , 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R , (mW) Total Power Dissipation, PT (mW) NE68518 , NE68530 D.C. POWER DERATING CURVE 200 180 , Temperature, TA (C°) NE68533 , NE68539 D.C. POWER DERATING CURVE 150 INSERTION GAIN vs. COLLECTOR , | NE685 SERIES NE68518 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector


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PDF NE685 NE685 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 24-Hour cce 7100 85500 transistor NE68530 br 8764 2SC4959 2SC5015 BJT IC Vce cce 7100 1053 NE68519
prime 15005

Abstract: pa 4010 IC NE68519 ne665 T2B SOT23 NE685
Text: NE68519-T1 NE68530-T1 ,T2 NE68533-TIB , T2B NE68539-T1 , T2 Note: 1. Lead material: Cu Lead plating: PbSn QTY , NE68519 2SC5010 19 NE6853Q 2SC4959 30 NE68533 2SC4955 33 NE68S39 2SC4957 39 PARAMETERS AND , 13.0 2000 1.48 8.2 3000 1.74 5.5 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518 , NE68530 D.C , mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30 150 -65 to +150 NE68530 , ai Ambient Temperature, Ta (C°) Ambient Temperature, Ta (C°) NE68533 , NE68539 D.C. POWER


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PDF NE685 OT-143) NE68518-T1, NE68519-T1 NE68530-T1 NE68533-TIB, NE68539-T1, prime 15005 pa 4010 IC NE68519 ne665 T2B SOT23
85500 transistor

Abstract: st 85500 LM 7209 P 13009 0708 P 13009 0803 transistor d 13009 0384 lm 7803 irl 3034 transistor c 2026
Text: NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 3-99 1. 2. 3. 4. Emitter Collector , ES NE68518.NE68530 D.C. POWER DERATING CURVE < t a = 2s o NE68519 D.C. POWER DERATING CURVE E. £ , PACKAGEOUTUNE SYMBOLS fT NE68S18 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68S33 2SC4955 , °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30 150 -65 to +150 NE68530 RATINGS 9 6 2.0 30 150 -65 to+150 NE68533 RATINGS 9 6 2.0 30 150 -65 to+150 NE68539 /39R RATINGS 9 6


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PDF NE685 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 85500 transistor st 85500 LM 7209 P 13009 0708 P 13009 0803 transistor d 13009 0384 lm 7803 irl 3034 transistor c 2026
NE46734

Abstract: NE46134 NE685 NE681 1817 transistor NE734 NE021 ne85634 NE680 NE856
Text: Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT (dB) NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB) 4.0 Output Power, POUT (dBm) & Gain GA (dB) Frequency, f (GHz) 35 NE46134 10 V, 80 mA, P1dB = 26.7 NE46134 10 V, 50 mA, P1dB = 24.4 NE46134 10 V, 30 mA, P1dB = 22.2 NE46134 30 NE85634


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PDF NE734 NE856 NE685 NE021 NE681 NE46734 NE46134 NE685 NE681 1817 transistor NE734 NE021 ne85634 NE680 NE856
ic HS 2272

Abstract: tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 D 13009 K 8m80 0732 gi 9405
Text: . 2. 3. 4. Emitter Collector Emitter Base NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 3-99 , NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518.NE68530 D.C. POWER DERATING CURVE (t a = 25°c ) NE68519 , REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539 /39R 2SC4957 39 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN , VCEO NE68518 UNITS V V V mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30


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PDF NE685 NEG85 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 ic HS 2272 tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 D 13009 K 8m80 0732 gi 9405
2003 - 855E

Abstract: UPA862TD AN1026 NE685 S21E UPA862TD-T3 BF109 mje 13006 bf 9673
Text: 0.5±0.05 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon , pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC , NONLINEAR MODEL PARAMETERS(1) Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851


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PDF UPA862TD NE851 NE685 855E AN1026 S21E UPA862TD-T3 BF109 mje 13006 bf 9673
m03 transistor

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES · NEW M03 PACKAGE: · Smallest transistor outline package available · Low profile/0.59 mm package height · Flat lead style for better RF , "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six , NE685M03 2SC5435 M03 UNITS GHz dB dB 7 75 ma PARAMETERS AND CONDITIONS Gain Bandwidth at V c e = 3 V , case connected to the guard terminal at the bridge. 3-90 NE685M03 ABSOLU TE MAXIMUM RA1`INGS1 (T


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PDF NE685M03 E685M NE685M03 m03 transistor
2005 - KF 517

Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
Text: 0.5±0.05 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon , pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC , UPA862TD NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166


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PDF UPA862TD NE851 NE685 KF 517 AN1026 S21E UPA862TD-T3-A
1999 - NE681

Abstract: NE685 S21E UPA840TC UPA840TC-T1
Text: DESCRIPTION The UPA840TC contains one NE685 and one NE681 NPN high frequency silicon bipolar chip. NEC's new


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PDF UPA840TC OT-363 UPA840TC 24-Hour NE681 NE685 S21E UPA840TC-T1
2000 - 2SC5617

Abstract: NE685M13 NE685 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS (Units in mm , 0.35 2 1 +0.1 0.15 ­0.05 0.1 0.1 0.2 DESCRIPTION 0.2 The NE685M13 transistor is , applications. The NE685 is also available in six different low cost plastic surface mount package styles , PARAMETERS AND CONDITIONS NE685M13 2SC5617 M13 UNITS MIN TYP fT Gain Bandwidth at VCE = 3 V , Eastern Laboratories NE685M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS


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PDF NE685M13 NE685M13 24-Hour 2SC5617 NE685 S21E
1997 - AN1017

Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
Text: Figure 4. NE685 Bipolar Die: Performance vs. Package Size f(MHz) NE68533 (In the NEC "33" Pkg) NF(dB) Ga(dB) NE68530 (In the NEC "30" Pkg) NF(dB)Ga(dB) NE68519 (In the NEC "19" Pkg , "19" ample is NEC's NE685 series of plastic surSurface Mount Package Package Package face mount bipolar transistors. Figure 4 demTransistor Package onstrates how Noise Figure and Gain for a NE685


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PDF AN1017 mid1960s, OT-23 OT-323 24-Hour AN1017 NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: 65 NE68539 2.0 2.5 3 1.5 7.5 2.5 3 11.5 12.0 110 35 NE85639 , 13.0 2.5 3 16.0 9.0 100 65 NE68518 2.0 2.5 3 1.5 8.5 2.5 , 15.5 7.0 120 65 NE68519 2.0 2.5 3 1.5 7.5 2.5 3 11.0 12.0 110 , 3 16 7.0 110 NE685M03 2.0 2.5 3 1.4 8 2.5 3 12 12.0 100 , 110 65 NE685M13 2 3 3 / 10 1.5 8.5 12 100 30 NE687M13 2


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
2000 - 2SC5652

Abstract: NE685 NE685M23 S21E RF TRANSISTOR 10 GHZ low noise
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm , 0.15 BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 0.55 The NE685M23 , wireless applications. The NE685 is also available in six different low cost plastic surface mount package , 10 mA, f = 2 GHz NE685M23 2SC5652 M23 UNITS MIN TYP GHz 12 Noise Figure at VCE = , terminal at the bridge. California Eastern Laboratories NE685M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25


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PDF NE685M23 NE685M23 24-Hour 2SC5652 NE685 S21E RF TRANSISTOR 10 GHZ low noise
1999 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package LOW HEIGHT PROFILE: Just 0.55 mm high FLAT LEAD STYLE: Reduced lead inductance improves electrical performance UPA826TC DESCRIPTION The UPA826TC contains two NE685 NPN high frequency silicon bipolar chips. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime


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PDF OT-363 UPA826TC UPA826TC NE685 UPA826TC-T1, 24-Hour
2003 - nec projector

Abstract: NE68533 AN1017 NE680 NE685 NE68519 NE68530
Text: devices in specific areas on the PC board, away from from the larger components. Figure 4. NE685 Bipolar Die: Performance vs. Package Size NE68533 (In the NEC "33" Pkg) NE68530 (In the NEC "30" Pkg) NE68519 (In the NEC "19" Pkg) Manufacturability The manufacturability of an assembly , "19" ample is NEC's NE685 series of plastic surSurface Mount Package Package Package face mount bipolar transistors. Figure 4 demTransistor Package onstrates how Noise Figure and Gain for a NE685


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PDF AN1017 mid1960s, OT-23 OT-323 nec projector NE68533 AN1017 NE680 NE685 NE68519 NE68530
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