The Datasheet Archive

Top Results (4)

Part Manufacturer Description Datasheet Download Buy Part
NE68130-A California Eastern Laboratories (CEL) TRANSISTOR NPN 1GHZ SOT-323
NE68130-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 1GHZ SOT-323
NE68130-T1-R34-A California Eastern Laboratories (CEL) SAME AS 2SC4227 NPN SILICON AMPL
2SC4227-T1-R34-A California Eastern Laboratories (CEL) SAME AS NE68130 NPN SILICON AMPL

NE68130 datasheet (7)

Part Manufacturer Description Type PDF
NE68130 NEC Semiconductor Selection Guide Original PDF
NE68130 NEC NPN silicon high frequency transistor. Original PDF
NE68130 NEC Super Minihold Transistors Scan PDF
NE68130-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
NE68130-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68130-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
NE68130-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF

NE68130 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68130 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9


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PDF NE68130 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 52e-9s
NE85630

Abstract: nec03 NE68030 NE68130 NE68330 2SC4228 NEC0330 NE68030 NEC Mini-Mold minimold
Text: . Emitter 2. Bim 3. Collector ABSOLUTE MAXIMUM RATINGS NE68130 NEC0330 , NUMBER EIAJ1 REGISTERED NUMBER NE68030 2SC4228 NE68130 2SC4227 NE68330 2SC4187 NE85630 2SC4226


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PDF OT-23) NE85630 nec03 NE68030 NE68130 NE68330 2SC4228 NEC0330 NE68030 NEC Mini-Mold minimold
T62 marking

Abstract: NE85630 marking R33 NE02130B NE02130 NE94430 marking t43 NE68630 NE68730 NE68830
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 (ALL LEADS) MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 EXCLUSIVE NORTH AMERICAN AGENT FOR +0.10 0.15 -0.05 MARKING T62, T63, T64 R2, R3 R43, R44, R45 R33, R34, R35 T83 T84 T86 T88


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PDF NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 T62 marking NE85630 marking R33 NE02130B NE02130 NE94430 marking t43 NE68630 NE68730 NE68830
Not Available

Abstract: No abstract text available
Text: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)7.0m @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq7.0GÂ @I(C) (A) (Test Condition)7.0m @V(CE) (V) (Test Condition)3.0 Power Gain Min. (dB) @I(C


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PDF NE68130
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: NE68519 NE85619 NE02130 NE68030 NE68130 NE68530 NE85630 NE02133 NE68033 NE68133 NE68533 NE85633 NE85634 , SUPER MINI MOLD NE68030 NE68130 NE68530 NE85630 3 PIN MINI MOLD NE68033 NE68133 NE68533 NE85633 4 PIN , NE68130 N E 68133 NE68135 N E 68139 N E685 Series N E 68518 NE68S19 N E 68530 N E 68539 N E 734 Series * N


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
2003 - kf 203 transistor

Abstract: 682 MARKING SOT-23 NE68119 NE68118 NE68100 NE681 2SC5012 2SC5007 tr/pcb-3/kf 203 transistor transistor KF 507
Text: QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 9.0 , 178 0.51 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = , SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base


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PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE68119 NE68118 NE68100 2SC5012 2SC5007 tr/pcb-3/kf 203 transistor transistor KF 507
NE68018

Abstract: No abstract text available
Text: NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NÉ02133


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PDF OT-23) NE68018
sot 326

Abstract: 338 sot-23 NE68530 NE02139
Text: Low Noise Bipolar Transistors Ì I TEST Part ' *- i NHG* Vcc M SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE85634 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0


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PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 sot 326 338 sot-23 NE68530 NE02139
NE88933

Abstract: NFC46 ne85639 NE681 NE68039 NE68035 NE68033 NE64535 NE21935 NE85635/CEL
Text: 11 6 10 2.0 8.0 10 6 10 50 100 250 10 35 0.20 NE681 NE68130 3 7 10 14 3 7 1 0 12 70 7 40 240


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PDF NE21935 NE645 NE64535 Nh680 NL68030 NE416 NE41635 NE461 NE46134 NE46734 NE88933 NFC46 ne85639 NE681 NE68039 NE68035 NE68033 NE85635/CEL
kf 203 transistor

Abstract: IC 2030 PIN CONNECTIONS 08E-12 NE68118 NE68100 NE681 2SC5012 2SC5007 2SC4227 BF 194 npn transistor
Text: NUMBER QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 , NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , : 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA NE681 SERIES NE68130 NONLINEAR


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PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor IC 2030 PIN CONNECTIONS 08E-12 NE68118 NE68100 2SC5012 2SC5007 2SC4227 BF 194 npn transistor
2003 - marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
Text: 2 Insertion Gain |S21e|2 (dB) 21e 2SC2759 13.0 NE85639E NE68133 12.0 NE68130 , NE851M03 10.0 NE68130 NE68833 *1 NE851M13 NE851M33 NE68039 NE68139 NE67839 NE67818 , 5 2.0 1.9 Fig.4 NE68130 20 10 1.5 150 3 7 40 240 7.0 3


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
NE68130

Abstract: NE68135 1820 0944 ca 4558 BJT BF 167 NE68118 2SC5012 2SC5007 2SC4227 NE AND micro-X
Text: QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , : 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA NE681 SERIES NE68130 NONLINEAR


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PDF NE681 NE681 NE68130 NE68135 1820 0944 ca 4558 BJT BF 167 NE68118 2SC5012 2SC5007 2SC4227 NE AND micro-X
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: NE68130 NE68530 NE68830 NE85630 +0.10 0.15 -0.05 MARKING R43, R44, R45 R33, R34, R35 T83 T88


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
NE66100

Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
Text: MAX MIN NE68130 2SC4227 30 TYP MAX PAR AM ETERS AN D CON DITIONS Gain Bandwidth Product at Vce = , +150°C. NE68130 TYPICAL NOISE PARAMETERS (T a=aso FREQ. (MHz) N F opt Ga (dB) to pt (dB


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PDF NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
2005 - BJT characteristics

Abstract: NE68135 NE68130 NE68119 NE68118 NE68100 NE681 2SC5012 NE68139 2SC4227
Text: NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 100 3000 3000 3000 3000 1 3000 3000 , NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 100 3000 3000 3000 3000 1 , GHz GHz NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , mA NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector


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PDF NE681 BJT characteristics NE68135 NE68130 NE68119 NE68118 NE68100 2SC5012 NE68139 2SC4227
Transistors BF 494

Abstract: Transistor BJT 547 b transistor kf 469
Text: NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 QUANTITY 100 3000 3000 3000 3000 1 3000 3000 PACKAGING , 2SC5007 19 TYP MAX MIN NE68130 2SC4227 30 TYP MAX NF G nf IS 21E |2 9 50 hFE 50 ICBO , +150D C. NE68130 TYPICAL NOISE PARAMETERS (Ta = 25 FREQ. (MHz) NF opt (dB) Ga (dB) topt C , 2.5 V to 8.0 V, lc = 0.3 mA to 10 mA (1) Gummel-Poon Model NE681 SERIES NE68130 NONLINEAR


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PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469
2SC3583

Abstract: kf 203 transistor marking 855 sot 353 BJT BF 167 NE68130 NE68119 NE68139 NE68100 NE681 2SC5012
Text: NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 3.25 8 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) OPT OPT NF , SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base


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PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor marking 855 sot 353 BJT BF 167 NE68130 NE68119 NE68139 NE68100 2SC5012
NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Text: (Solder Contains Lead) PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 , NUMBER NE68100 NE68118-T1-A NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 , NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 7.0 1.2 1.6 2.3 14 12 17 , +150°C. NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) 1.48 1.90 2.15 2.70 1.10 , NE68130 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector CBEPKG


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PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
LB 1639

Abstract: transistor TT 3043
Text: ORDERING INFORMATION PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , MAX NE68130 2SC4227 30 MIN TYP MAX 7.0 1.2 1.6 2.3 14 12 17 9 50 13 15 9 100 250 80 160 1.0 1.0 , . Maximum storage temperature for the NE68135 is -65 to +150°C. NE68130 TYPICAL NOISE PARAMETERS (ta , ) Gummel-Poon Model 3-82 NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL


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PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043
NE68018

Abstract: 814T
Text: 100 320 322 324 326 328 330 338 3 PIN SUPER MINI MOLD NE68030 NE68130 NE68530 NE68630 NE68730


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PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T
transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Text: ha ma NES8119 2SC5007 19 MIN TYP MAX MIN NE68130 2SC4227 30 TYP MAX MAX 7.0 1.5 1.6 13.5 , NE68135 and NE68100 is 200°C. 3. Maximum storage temperature for the NE68135is -65 to +150°C. NE68130


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PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: ) 2SC2759 13.0 NE85639E NE68133 12.0 NE68130 NE02139E NE68618 NE85633 NE68639 , NE856M23 8.5 NE68135 NE68132 NE68133 NE68130 NE68139E NE68118 NE68119 NE681M03 NE681M13 , 3 5 2.0 7.5 3 5 2.0 1.9 Fig.8 NE68130 20 10 1.5 150 3 7


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
transistor TT 3043

Abstract: IJEAD
Text: 2.5 1.4 1.8 14 10 14 8 7.0 1.5 1.6 13.5 9 13 7.5 MAX MIN NE68119 2SC5007 19 TYP MAX MIN NE68130 , NE68100 is 200°C. 3. Maximum storage temperature for the NE68135is -65 to +150°C. NE68130 TYPICAL NOISE


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PDF NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD
2005 - transistor "micro-x" "marking" 102

Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: Lead) PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 , NE68118-T1-A NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135-A NE68139-T1-A NE68139R-T1-A QUANTITY 100 3000 , dB dB 9.0 NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP , for the NE68135 is -65 to +150°C. NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT , to 10 mA (1) Gummel-Poon Model NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC CCBPKG CCB


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PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: 6 5 1.7 9.5 6 10 8.5 10.0 100 35 NE68130 1.0 8 7 1.5


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
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