The Datasheet Archive

NE6510179A datasheet (16)

Part Manufacturer Description Type PDF
NE6510179A California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
NE6510179A NEC Semiconductor Selection Guide Original PDF
NE6510179A NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
NE6510179A-A NEC TRANS JFET N-CH 8V 720MA BULK Original PDF
NE6510179A-EVPW19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 1.9GHZ Original PDF
NE6510179A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.4GHZ Original PDF
NE6510179A-EVPW26 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.6GHZ Original PDF
NE6510179A-EVPW35 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 3.5GHZ Original PDF
NE6510179A-T1 California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
NE6510179A-T1 NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
NE6510179A-T1 NEC 1 W L-Band Power GaAs HJ-FET Original PDF
NE6510179A-T1 NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
NE6510179A-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A Original PDF
NE6510179A-T1-AZ NEC FET Transistor: 1W L-BAND POWER GaAs HJ-FET: Tape And Reel Original PDF

NE6510179A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GRM40X7R104K025BL

Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
Text: gain compression is 3.0 dB at Vds > 4.2 V. ORDERING INFORMATION PART NUMBER QTY NE6510179A-T1 1 K , 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT , Note: Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION_ The NE6510179A is a 1 W GaAs , NE6510179A 79A Functional Characteristics SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS , standard devices is 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A 24-Hour GRM40X7R104K025BL IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
1998 - NEC k 1760

Abstract: NE6510179A California Eastern Laboratories OR NEC NE6510179A-T1 ne651
Text: INFORMATION PART NUMBER QTY NE6510179A-T1 NE6510179A EXCLUSIVE NORTH AMERICAN AGENT FOR UNITS , PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER NE6510179A GaAs HJ-FET FEATURES OUTLINE , otherwise specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for , . ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE6510179A PACKAGE OUTLINE Functional , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A 200ure NE6510179A-T1 24-Hour NEC k 1760 NE6510179A California Eastern Laboratories OR NEC NE6510179A-T1 ne651
2000 - NE6510179A

Abstract: No abstract text available
Text: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A IMT-2000, 24-Hour
2000 - NE6510179A

Abstract: NE65 ms 16881
Text: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A IMT-2000, 24-Hour NE65 ms 16881
2001 - NE6510179A

Abstract: No abstract text available
Text: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A IMT-2000, 24-Hour
2000 - NE6510179A

Abstract: No abstract text available
Text: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC


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PDF NE6510179A 24-Hour
NE6510179A

Abstract: No abstract text available
Text: . NE6510179A-T1 NE6510179A 1 K/Reel Bulk, 100 piece min. 2-21 , TAPE & REEL PACKAGE OPTION AVAILABLE NE6510179A (Units in mm) OUTLINE DIMENSIONS PACKAGE , mm. d e s c r ip t io n _ The NE6510179A is a 1 W GaAs HJ-FET designed for , . ELECTRICAL CHARACTERISTICS PART NUMBER (Tc = 2 5° q NE6510179A 79A UNITS MIN TYP MAX TEST CONDITIONS , NE6510179A TYPICAL RF PE RFORMANCE FOR REFERENCE (NOT SPECIFIED) SYMBOLS Pout (Tc = 2 5 °q MAX TEST


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PDF NE6510179A NE6510179A-T1 NE6510179A
NE6510179A

Abstract: hjfet
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, idsq = 150 mA, f = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ vds = 3.2 v, idsq = 200 mA, f = 1760 MHz, Pin = +24 dBm , : Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET , . ELECTRICAL CHARACTERISTICS (Tc = 2s°c) PART NUMBER PACKAGE OUTLINE NE6510179A 79A Functional


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PDF NE6510179A NE6510179A hjfet
2000 - NE6510179A

Abstract: No abstract text available
Text: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC


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PDF NE6510179A 24-Hour
2002 - NE6510179A

Abstract: No abstract text available
Text: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A IMT-2000,
1999 - Not Available

Abstract: No abstract text available
Text: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium , Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC


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PDF NE6510179A 24-Hour
a 1232 nec

Abstract: NE6510179A nec 1565 NEC TANTALUM
Text: INFORMATION Part Number NE6510179A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Remark To , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication , : NE6510179A ) * ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Operation in excess of any one of these parameters , Compression Channel Temperature Symbol V ds NE6510179A Test Conditions MIN. TYP. MAX. 4.2 5.0


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PDF NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM
Not Available

Abstract: No abstract text available
Text: +25 dBm ORDERING INFORMATION Part Num ber NE6510179A-T1 Remark Package 79 A Supplying , 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET , office. (Part number for sample order: NE6510179A ) ★ ABSOLUTE MAXIMUM RATINGS (T a = 25 , © NEC Corporation 1 9 9 8 NEC NE6510179A RECOMMENDED OPERATING LIMITS Characteristics Drain , bset Vds = 3.5 MIN. V NEC ★ NE6510179A OUTPUT POWER, DRAIN CURRENT AND GATE


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PDF NE6510179A NE6510179A
2000 - NE6510179A

Abstract: NE6510179A-T1
Text: MHz, Pin = +25 dBm ORDERING INFORMATION Part Number Package NE6510179A-T1 79A , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , , consult your NEC sales representative (Part number for sample order: NE6510179A ). Caution Please , points. © 1998, 2000 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of


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PDF NE6510179A NE6510179A NE6510179A-T1
1999 - NE6510179A

Abstract: NE6510179A-T1
Text: MHz, Pin = +25 dBm ORDERING INFORMATION Part Number NE6510179A-T1 Package 79A Supplying , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , NEC sales office. (Part number for sample order: NE6510179A ) Caution Please handle this device , points. © 1998, 1999 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of


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PDF NE6510179A NE6510179A NE6510179A-T1
MCR03J

Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
Text: INFORMATION PART NUMBER NE6510179A-T1-A NE6510179A-A TOTAL POWER DISSIPATION vs. CASE TEMPERATURE , NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS (Units in , : Unless otherwise specified, tolerance is ±0.2 mm NEC's NE6510179A is a GaAs HJ-FET designed for medium , . ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE6510179A Functional Characteristics , for several samples. California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR


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PDF NE6510179A IMT-2000, MCR03J IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
NEC k 1760

Abstract: NE6510179A
Text: TYP 3.5 MAX 6.0 125 5.0 dB ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A , CLASS AB OPERATION TAPE & REEL PACKAGE OPTION AVAILABLE NE6510179A OUTLINE DIMENSIONS (Units in , : Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION_ The NE6510179A , ) NE6510179A 79A UNITS dBm dB % A A V -2.0 PACKAGE OUTLINE SYMBOLS Functional Characteristics P out , devices is 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF


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PDF NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A
2000 - NE6510179A

Abstract: No abstract text available
Text: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC


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PDF NE6510179A 24-Hour
1998 - nec 772

Abstract: NE6510179A NE6510179A-T1
Text: MHz, Pin = +25 dBm ORDERING INFORMATION Part Number Package NE6510179A-T1 79A , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , , contact your nearby sales office. Part number for sample order: NE6510179A Caution Please handle , NEC Compound Semiconductor Devices 2001 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C


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PDF NE6510179A NE6510179A nec 772 NE6510179A-T1
NE6510179A

Abstract: NE650103M NE651R479A
Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain (GHz) (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 - NE6510179A 0.8 to 3.7 - NE650103M 0.8 to 2.7 29.5 40.0 15.0 12.0 35.0 25.0 10.0 40.0 30.0 11.0 Power Added Test Efficiency1 Frequency VDS (%) (GHz) (V) 58 IDS1 (mA) Package Code 350 79A


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PDF NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A
1E-16

Abstract: No abstract text available
Text: NONLINEAR MODEL NE6510179A SCHEMATIC LGX GATE 0.001 nH 0.75 nH LG Q1 RDX 0.2 ohms RDBX 400 ohms LD 0.65 nH LDX 0.01 nH DRAIN CGS PKG 0.1 pF CBSX 100 pF CDS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO(3) CGDO(4) DELTA1 DELTA2 FC VBR Q1 -0.756 0 2 2.245 0 0.01 1.7 0 0.6 1e-16 1 0 0 10e-12 0.5e-12 0.001 0 20e-12 4e-12 0.3 0.2 0.5 Infinity


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PDF NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour
NEM0899F01-30

Abstract: No abstract text available
Text: NE12802001 NE12804001 NE6510179A NE6500379A NE6500496 NE6501077 NE850R599A NE8500199 NE8500295-4 NE8500295


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PDF NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30
2001 - Not Available

Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC's stringent quality and control


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PDF NE651R479A NE651R479A NE6510179A NE6510379A.
x 1535 ce

Abstract: 0537
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by N E C 's


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PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: , 28R NE6510179A TI NE651R479A TH Packaging All dimensions are in millimeters, and


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
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