The Datasheet Archive

NE329S01 datasheet (5)

Part Manufacturer Description Type PDF
NE329S01 NEC N-CHANNEL HJ-FET Original PDF
NE329S01 NEC SUPER LOW NOISE HJ FET Original PDF
NE329S01 NEC Semiconductor Selection Guide Original PDF
NE329S01-T1 NEC SUPER LOW NOISE HJ FET Original PDF
NE329S01-T1B NEC SUPER LOW NOISE HJ FET Original PDF

NE329S01 Datasheets Context Search

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Not Available

Abstract:
Text: CL n ORDERING INFORMATION PART NUMBER NE329S01-T1 NE329S01-T1B SUPPLY FORM Tape & Reel 1000 , SUPER LOW NOISE HJ FET NE329S01 FEATURES S U P E R L O W N O IS E F IG U R E : N O IS E F , H : 200 jim m T> < (3 (5 r o DESCRIPTION The NE329S01 is a Hetero-Junction FET that , CONDITIONS PART NUMBER SYMBOLS V ds Ids P in (t a = 25 C) NE329S01 UNITS V mA dBm PARAMETERS , 0.45 90 -2.0 10 .California Eastern Laboratories NE329S01 ABSOLUTE MAXIMUM RATINGS1 (Ta =


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PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour
1998 - D2504 transistor

Abstract:
Text: excellent low 2.0 ±0.2 in ue ORDERING INFORMATION 4 SUPPLYING FORM MARKING NE329S01-T1 Tape & reel 1000 pcs./reel NE329S01-T1B Tape & reel 4000 pcs./reel a 0.65 TYP. Drain to , . DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 uc t X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero , January 1998 N CP(K) Printed in Japan MIN. © 1997 NE329S01 ELECTRICAL CHARACTERISTICS (TA =


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PDF
1998 - D2504 transistor

Abstract:
Text: 1. 2. 3. 4. 3 NE329S01-T1 Tape & reel 1000 pcs./reel NE329S01-T1B a Tape & reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET , NE329S01 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL Gate to Source Leak Current , 8 10 f - Frequency - GHz 2 14 20 30 NE329S01 Gain Calculations ~S21~ MAG. =


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PDF NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 transistor D454 transistor d412 d1405 transistor NF 817
NE329S01

Abstract:
Text: MARKING Bulk NE329S01-T1 Tape & Reel 1000 pcs/reel NE329S01-T1B Tape & Reel 4000 pcs/reel , SUPER LOW NOISE HJ FET NE329S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES · , 12 0.5 8 DESCRIPTION NF The NE329S01 is a Hetero-Junction FET that utilizes the , (GHz) NE329S01 SYMBOLS PARAMETERS VDS Drain to Source Voltage IDS Drain Current PIN Input , SYMBOLS Associated Gain, GA (dB) VDS = 2 V ID = 10 mA PARAMETERS AND CONDITIONS NE329S01


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PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour NE329S01-T1 NE329S01-T1B
Not Available

Abstract:
Text: NE329S01-T1 NE329S01-T1B SUPPLY FORM Bulk Tape & Reel 1000 pcs/reel Tape & Reel 4000 pcs/reel a MARKING , NE329S01_ TYPICAL SCATTERING PARAMETERS (Ta = 25°q 180' N E329S 01 V , NEC FEATURES SUPER LOW NOISE HJ FET NE329S01 n o is e f ig u r e , DESCRIPTION_ The NE329S01 is a Hetero-Junction FET that utilizes the junction to create , PARAMETERS (Ta = 25°c ) NE329S01 UNITS MIN TYP MAX Vds Ids P in Drain to Source Voltage


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PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B
lg TYP 513 309

Abstract:
Text: : Wg = 200 ¿an ? ORDERING INFORMATION PART NUMBER NE329S01-T1 NE329S01-T1B SUPPLYING FORM Tape & , TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE329S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its , NE329S01 MIN. TYP. 0 .5 60 -0 .7 60 0 .3 5 MAX. 10 90 -2 .0 UNIT mA mA V TEST CONDITIONS , Calculations MSG. = I Sail S ii MAG. = -L §21L (k ± vK2- 1) IS 1 2 1 NE329S01 1+ U la - 1 Su |g -1


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PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B lg TYP 513 309 NEC Ga FET marking L low noise FET NEC U SAAI Marking
5282 F 1349

Abstract:
Text: l d e f f e c t t r a n s is t o r / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ESC R IPTIO N The NE329S01 is a Hetero Junction FET that utilizes the hetero , dB m © NEC Corporation 1997 NEC NE329S01 E LE C T R IC A L C H A R A C TE R IS TIC S (T , Q U E N C Y f - F re q u e n cy - G H z 2 NEC NE329S01 Gain Calculations IS 2 1 1 , Id - D rain C u rre n t - m A f - F re q u e n c y - G H z 3 NEC NE329S01 S-PARAM


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PDF NE329S01 NE329S01 Rn/50 5282 F 1349
low noise, hetero junction fet

Abstract:
Text: NE696M01 Bipolar Transistors for a discrete solution 11.7 ­ 12.7 GHz NEW! NEW! NE329S01


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PDF NE429M01 NE76038 UPC2711/12TB OT-363 NE696M01 NE329S01 NE721S01 UPC2781GR 520MHz 20MHz low noise, hetero junction fet NE76038 UPB1506 NE721S01 2,5GHz oscillator UPC2711 NE429M01 UPC2781GR Prescalers SSOP20
Not Available

Abstract:
Text: NONLINEAR MODEL NE329S01 SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 0.64nH 6 ohms CGS_PKG 0.055pF Lsx 0.06nH Rsx 0.06 ohms CDS_PKG 0.05PF Q1 0.56nH Rdx 6 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.825 0 7 0.148 0.083 0.05 2.5 0.7 0.6 1e-14 1 0 0 3e-12 0.13e-12 5000 1e-9 0.42e-12 0.023e-12 0.3 0.6 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC


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PDF NE329S01 001pF 055pF 1e-14 3e-12 13e-12 42e-12 023e-12 24-Hour
LORB

Abstract:
Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 NE334S01 NE34018 NE425S01 NE429M01 NE434S01 NE23383B NE24283B NE67483B NE32484A NE32584C NE33284A NE32984D Sat« Gate Length W idth (Mm) ftim ) 0.3 0.25 0.20 0.30 0.25 0.20 0.20 0.3 0.2 0.2 0.3 0.6 0.2 0.3 0.3 0.3 0.25 0.3 0.25 0.2 0.3 0.2 280 200 200 280 200


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PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01
1999 - X13769XJ2V0CD00

Abstract:
Text: HJFET NE3210S01 NE425S01 SW+IF Amp. NE425S01 NE329S01 NE4210M01 NE4210M01 µ PG182GR NE325S01 SW µ


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PDF X13769XJ2V0CD00 PD78064Y, 780308Y PD780205 PD7500× PD78064, X13769XJ2V0CD00 2SC470-3 PC1891A PC1099 R78K0 2SC4703 NE3210S01 PC2709TB PC2781GR PC659A
1999 - AV to rf converter

Abstract:
Text: NE3210S01 NE425S01 SW+IF Amp. NE425S01 NE329S01 NE4210M01 NE4210M01 µ PG182GR NE325S01 SW Parabolic ANT


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PDF 2SC4703 2SC5338 2SC4093 2SC3356 PB1506/1507 3SK224 3SK134B AV to rf converter RF remote control rgb led PD780205 PC3202 CD Pick-Up head PC2798GR dc generator motor controller car front camera rgb lcd interface SCK VARISTOR
1999 - 22S21

Abstract:
Text: Drain Current PIN Input Power NE329S01 UNITS MIN TYP MAX V 2 3 mA 10 15 dBm 0 Note: 1. Operation in


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PDF NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A
2000 - 3210S01

Abstract:
Text: Drain Current PIN Input Power NE329S01 UNITS MIN TYP MAX V 2 3 mA 10 15 dBm 0 Note: 1. Operation in


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PDF NE3210S01 NE3210S01 3210S01 24-Hour NE3210S01-T1B NE3210S01-T1 nec 0882 NEC Ga FET marking A 150J10
1999 - uPD72002-11

Abstract:
Text: NE23383B NE24200 NE24283B NE27200 NE3210S01 NE32484A NE32500 NE32584C NE325S01 NE32900 NE329S01 NE33284A


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD65 uPD78F0841
1999 - uPD16305

Abstract:
Text: NE32484A NE32500 NE32584C NE325S01 NE32900 NE329S01 NE33284A NE334S01 µPA800 µPA801 µPA802 µPA803 µPA804


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC2710 UPC458 uPA2981 uPD65656
1998 - nf025

Abstract:
Text: =0.25dB, Ga =16.0dB 18 NE76000 NE76038 NE76083A NE76084 NE76184A NE32484A NE32584C NE325S01 NE329S01 , GAIN vs. NOISE FIGURE @ f = 12 GHz NE3210S01 13 NE329S01 NE27283B Associated Gain Ga (dB


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 2SC536
2012 - 2SK2396

Abstract:
Text: S01 NE329S01 HJFET BS 2 10 400018000 NF = 0.35 dB, Ga = 13.0 dB@f = 12 GHz , GaAs/HJ FET1/3 vs. @f = 12 GHz NE3210S01 13 NE329S01 NE27283B NE32584C NE325S01 12 Ga dB


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 pc1658 PC2763 ne27283 2SC3545 2SC3357 2SC4957 2sc3355 UPC8116GR 2SC2570A
1999 - free transistor equivalent book 2sc

Abstract:
Text: No file text available


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PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 MOSFET cross-reference 2sk samsung UHF/VHF TV Tuner PD431000A-X upper arm digital sphygmomanometer circuit diagram uPC1237 PD72001 specification of scr 2p4m
1991 - uPD3599

Abstract:
Text: No file text available


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PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 nec 3S4M MC-7643 RD2.4S equivalent NPN transistor SST 117 2sA1441 nec 4305 regulator nec 2SC4305 NEC
1997 - micro servo 9g

Abstract:
Text: No file text available


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PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 infrared sensor TSOP - 1836 upc1237 2SK518
1997 - sc5 s dc 6v relay

Abstract:
Text: No file text available


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PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay UPD7752 UPD66010 P48D-70-600 AC03E uPA1601 uPD72020 uPD16503 UPD70208H uPD7520
1991 - lg crt monitor circuit diagram

Abstract:
Text: No file text available


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PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 LG lcd tv tuner 8049 microcontroller APPLICATION pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
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