The Datasheet Archive

NE24283B datasheet (2)

Part Manufacturer Description Type PDF
NE24283B NEC Semiconductor Selection Guide Original PDF
NE24283B NEC N-CHANNEL HJ-FET Original PDF

NE24283B Datasheets Context Search

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nbc 3101

Abstract: ha 1758 PACKAGE OUTLINE 83B bs 246 fet
Text: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES_ · VERY LOW NOISE , , Ids = 10 mA DESCRIPTION_ The NE24283B is a pseudom orphic Hetero- Junction , type but not for each specimen. NE24283B ABSOLUTE MAXIMUM RATINGS1 (T a=2 o O SYMBOLS V ds V , -1.0 -0.75 -0.50 -Q 25 0 Drain to Source Voltage, Vos (V) G GS (V) NE24283B , 2 0 m A ) -90" NE24283B Vds = 3 V, Ids = 20 mA FREQUENCY GHz 0.10 0.20 0.50 1.00 1.50 2.00


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PDF NE24283B IS12S21I NE24283B 24-Hour nbc 3101 ha 1758 PACKAGE OUTLINE 83B bs 246 fet
1998 - NE24283B

Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES NOISE FIGURE & , NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped , NFOPT1 GA1 P1dB G1dB IDSS PARAMETERS AND CONDITIONS NE24283B 83B UNITS Optimum , for each specimen. California Eastern Laboratories NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25 , 35 40 45 5 Gate to Source Voltage, VGS (V) 50 NE24283B TYPICAL COMMON SOURCE


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PDF NE24283B NE24283B 24-Hour
1997 - D2394

Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero , Published July 1997 N Printed in Japan SYMBOL MIN. © 1997 NE24283B ELECTRICAL , 30 NE24283B Gain Calculations ~S21~ MAG. = ~S21~ K= ~S12~ 2 ~S12~~S21~ ' = , 14 20 30 4 f - Frequency - GHz 3 NE24283B S-Parameters MAG. AND ANG. VDS = 2 V


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PDF NE24283B NE24283B D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Text: TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE24283B is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons , Figure Associated Gain SYMBOL bso Ig d o NE24283B MIN. TYP. 0.5 0.5 MAX. 10 10 70 -2 .0 , -L§SlL I $12 I NE24283B K 1 4- U l g -|S lll2 -|S 2 2 l£ 2 | Siz [ I S21 I MAG. = !S1 2 , - Frequency - GHz 3 NEC S-Parameters MAG. AND ANG. V ds NE24283B = 2 V , lo = 10 mA


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PDF NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
PACKAGE OUTLINE 83B

Abstract: NE24283B 2sc 1014
Text: urn · HERMETIC METAL/CERAMIC PACKAGE NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds , NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped , NE24283B 83B TYP MAX 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 750 0.7 Ga ' 10.0 , tuned for the "generic" type but not for each specimen. 1-17 NE24283B ABSOLUTE MAXIMUM RATINGS1 , gs (V) 1-18 Transconductance, g m (mS) ç NE24283B TYPICAL COMMON SOURCE SCATTERING


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PDF NE24283B NE24283B IS12I PACKAGE OUTLINE 83B 2sc 1014
NE24283B

Abstract: No abstract text available
Text: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES NOISE FIGURE & ASSOCIATED GAIN vs , = 200 µm · HERMETIC METAL/CERAMIC PACKAGE DESCRIPTION The NE24283B is a pseudomorphic , IDSS PARAMETERS AND CONDITIONS NE24283B 83B UNITS Optimum Noise Figure at VDS = 2 V, IDS = , . California Eastern Laboratories NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS , Drain Current, IDS (mA) 45 50 Associated Gain, GA (dB) 1.4 250 NE24283B TYPICAL


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PDF NE24283B NE24283B 24-Hour
transistor d 2389

Abstract: No abstract text available
Text: / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the (Unit : mm) hetero junction to create , 1997 E orp ratio NEC NE24283B ELECTRICAL CHARACTERISTICS (T a = 2 5 ° C ) CHARACTERISTIC , NE24283B Gain Calculations M SG. = i ^ i K = I Sl2| MAG. = - L § d _ I Sid 1 + 1 A , FIGURE, ASSOCIATED GAIN vs. FREQUENCY f - Frequency - GHz 3 NEC NE24283B S-Parameters


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PDF NE24283B NE24283B transistor d 2389
NF 831

Abstract: No abstract text available
Text: NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 m A HIGH ASSOCIATED GAIN , /CERAMIC PACKAGE co DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the , . Frequency, f (GHz) ELECTR ICA L CH ARACTERISTICS SYMBOLS NF 0 PT1 < t a = 25°c) NE24283B 83B UNITS , . 1-9 NE24283B ABSOLUTE MAXIMUM RATINGS 1 (Ta = 25°c ) SYMBOLS V ds Vgso Ids Igrf T ch T stg Pt , 1.5 30 Drain to Source Voltage, V ds (V) Drain Current, Ids (mA) 1-10 NE24283B


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PDF NE24283B NE24283B hermet43 NF 831
Not Available

Abstract: No abstract text available
Text: NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids r 10 mA 24 HIGH ASSOCIATED , HERMETIC METAL/CERAMIC PACKAGE 15 O DESCRIPTION The NE24283B is a pseudom orphic Hetero-Junction , cj PARTNUMBER PACKAGE OUTLINE SYMBOLS N F o p t1 NE24283B 83B UNITS MIN TYP MAX PARAMETERS , go-no-go" screening tuned for the "generic" type but not for each specimen 1-8 NE24283B ABSOLUTE , Drain Current, Ids (mA) Drain to Source Voltage, V ds (V) 1 -9 NE24283B TYPICAL COMMON SOURCE


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PDF NE24283B NE24283B
NE24283B

Abstract: NE76083A ne71383B
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 83A/B 1.88 ± 0.3 S Dot A 0.5 ± 0.1 1.88 ± 0.3 G D 4.0 MIN (ALL LEADS) Dot B S 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 PART NUMBER MARKING DOT A DOT B NE24283B BLUE BLUE NE71383B RED BLUE NE76083A GREEN - EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN


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PDF NE24283B NE71383B NE76083A 24-Hour NE24283B NE76083A ne71383B
NE329

Abstract: No abstract text available
Text: Low Noise GaAs FETs Typical Specifications @ Ta = 25°C Part NE24200 NE32400 NE33200 |N EW ^ I new ^ IN E W ^ IN E W ^ IN E W ^ NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE32584C NE33284A NE42484A IN E W ^ NE32984D 0.25 0.25 0.3 0.2 0.3 0.6 0.2 0.3 0.25 0.25 0.2 0,3 0.3 0.2 200 280 400 200 280 200 200 200 280 200 200 0.1 to 40 0.1 to 40 0.1 to 18 O.t to 14 0.1 to 14 0.1 to 6 0.1 to 14 0.1 to 14 0.1 to 20 1.0 to 14 1.0 to 18 0.1 to 14 0.1 to 14 1.0 to 18 12 12 12 12 4 2 12 4


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PDF NE24200 NE32400 NE33200 NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE329
ne71084

Abstract: GaAs MESFET NE25139 NE4200 MESFET Application NE72000 ne72089 NE67383 71083 NE71000
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber NE' 4200 NE 32400 NE S3200 NE87300 NE '1000 NE76000 NE '6100 NE24283B (Min) 0.25 0.25 0.3 0.3 0.3 0.3 1.0 0.25 200 200 280 280 280 280 400 200 1.0 to 40 1.0 to 40 0.1 to 18 0.1 to 18 0.1 to 18 0.1 to 18 0.1 to 12 1.0 to 20 Gita Frequency Range Test | Frequency C6HZ) 12 12 12 , and reel. 1-3 Alphanumeric Index 1 Small Signal GaAs FETs PART NUMBER * NE24200 * NE24283B


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PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 MESFET Application NE72000 ne72089 NE67383 71083 NE71000
NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B NE272 mmic amplifier marking code N5 FET marking code .N5 NE23383B ne29200 NE292 gaas fet marking a
Text: Rank Function Form Package Marking NE24283B (L) — Low Noise HJFET packaged 83B 242 NE24200(L) â , . Max. NE24283B (L) NE24200(L) IDSS VDS=2V,VGS=0V 15 70 mA ± 10% gm VDS=2V,IDS=10mA 45 - mS Â


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PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B NE272 mmic amplifier marking code N5 FET marking code .N5 NE23383B ne29200 NE292 gaas fet marking a
ne71084

Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 NE76083A NE32484A NE32584C NE32684A1 NE33284A NE42484A NE71084 NE76084 NE76184A 0.25 0.25 0.3 0.3 0.3 0.3 1.0 0.28 .03 .03 .03 0.25 200 200 280 2« ) 280 280 400 200 280 280 280 1.0 to 40 1.OtO 40 0.1 to 18 12 12 12 12 12 12 4 12 12 12 12 2.0 2.0 2.0 3.0 3.0 3.0 3.0 2.0 3.0 10 10 10 0.6 0.6 0.75 1.4 1.5 11.0 11.0 10.5 10.0 9.0 9.0 12.0


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PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089
LORB

Abstract: NE2720 NE334S01
Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 NE334S01 NE34018 NE425S01 NE429M01 NE434S01 NE23383B NE24283B NE67483B NE32484A NE32584C NE33284A NE32984D Sat« Gate Length W idth (Mm) ftim ) 0.3 0.25 0.20 0.30 0.25 0.20 0.20 0.3 0.2 0.2 0.3 0.6 0.2 0.3 0.3 0.3 0.25 0.3 0.25 0.2 0.3 0.2 280 200 200 280 200


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PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01
NE334S01

Abstract: E7138 nec microwave NE76084 NE67383
Text: NE434S01 NE24283B NE32484A NE32584C NE33284A NE 42484A NE32984D 0.6 0.2 0.3 0.25 0.25 0.2 0.3 0.3 0.2


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PDF
1999 - uPD16305

Abstract: uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
Text: µPA828 µPA831 µPA832 µPA833 µPA834 µPA835 µPA836 µPA840 NE23383B NE24200 NE24283B NE27200 NE3210S01


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
Text: NE23383B NE24200 NE24283B NE27200 NE3210S01 NE32484A NE32500 NE32584C NE325S01 NE32900 NE329S01 NE33284A


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: GHz NE24200 NE24283B HJFET HJFET 2 2 10 10 12000 NF = 0.6 dB 83B , NE425S01 NE42484C 11 NE32484A NE24283B NE4210M01 NE42484A 10 NE429M01 0.3 0.4


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: 800­3000 4000­12000 Part Number NE674 NE71300 NE71383B NE76118 NE23383B NE24200 NE24283B NE27200 NE32500 , ) NE32584C NE325S01 12 NE425S01 NE42484C 11 NE32484A NE24283B NE4210M01 NE42484A 10


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: No file text available


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
1999 - free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X PD72001 upper arm digital sphygmomanometer circuit diagram uPC1237 uPC 2002
Text: No file text available


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PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X PD72001 upper arm digital sphygmomanometer circuit diagram uPC1237 uPC 2002
1997 - sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD72020 uPA1601 uPD7520 UPD70208H uPD16503
Text: No file text available


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PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD72020 uPA1601 uPD7520 UPD70208H uPD16503
1991 - uPD3599

Abstract: nec 3S4M MC-7643 transistor nec 2SK2396 MOS FET BUZ 444 2SC4305 NEC RD2.4S equivalent 4305 regulator nec 2sA1441 nec NPN transistor SST 117
Text: No file text available


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PDF X10679EJFV0SG00 uPD3599 nec 3S4M MC-7643 transistor nec 2SK2396 MOS FET BUZ 444 2SC4305 NEC RD2.4S equivalent 4305 regulator nec 2sA1441 nec NPN transistor SST 117
1991 - lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 LG lcd tv tuner 8049 microcontroller APPLICATION pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: No file text available


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PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 LG lcd tv tuner 8049 microcontroller APPLICATION pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
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