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NDS8410A Fairchild Semiconductor Corporation Rochester Electronics 219,234 $0.81 $0.66
NDS8410A Fairchild Semiconductor Corporation America II Electronics 3,634 - -
NDS8410A Fairchild Semiconductor Corporation Bristol Electronics 12 - -
NDS8410A Fairchild Semiconductor Corporation Bristol Electronics 800 - -
NDS8410A Fairchild Semiconductor Corporation ComS.I.T. 1,875 - -

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NDS8410 datasheet (18)

Part Manufacturer Description Type PDF
NDS8410 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 10A 8-SOIC Original PDF
NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410 Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDS8410 National Semiconductor Single N-Channel Enhancement M ode Field Effect Transistor Scan PDF
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410A Fairchild Semiconductor Single 30V N-Channel PowerTrench MOSFET Original PDF
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410A Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDS8410A National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
NDS8410A_NL Fairchild Semiconductor 30V Single N-Channel PowerTrench MOSFET Original PDF
NDS8410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDS8410S Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF

NDS8410 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: February 1996 N NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , = 25°C unless otherwise noted Sym b ol P aram eter NDS8410 U nits v DSS V , NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS S ym b ol (T a P aram eter = 25°C unless otherwise , 15 V, S t = 10 a , VG = 1 0 V S 5.6 nC 14 nC NDS8410 Rev B2 ELECTRICAL , W idth < 3 0 0 p s , Duty Cycle < 2.C NDS8410 Rev B2 Typical Electrical Characteristics 0


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PDF NDS8410 NDS8410 193tQ
J31C

Abstract: NDS8410
Text: N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , surface mount package. Absolute Maximum Ratings ta = 25 cunless otherwise noted Symbol Parameter NDS8410 , , Junction4o-Case (Note i) 25 °aw NDS8410 Rev B2 This Material Copyrighted By Its Respective Manufacturer , nC Gate-Drain Charge 14 nC NDS8410 Rev B2 This Material Copyrighted By Its Respective , .C NDS8410 Rev B2 This Material Copyrighted By Its Respective Manufacturer Typical Electrical


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PDF NDS8410 NDS8410 0D33347 J31C
1997 - NDS8410

Abstract: No abstract text available
Text: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , NDS8410 Drain Current - Continuous 30 - Pulsed V ± 10 A ± 50 (Note 1a) 2.5 , , Junction-to-Case (Note 1) 25 °C/W © 1997 Fairchild Semiconductor Corporation NDS8410 Rev B2 , = 10 A, VGS = 10 V 14 80 ns 46 60 nC 5.6 nC 14 nC NDS8410 Rev B2 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical


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PDF NDS8410 NDS8410
1996 - NDS8410

Abstract: No abstract text available
Text: N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , noted Symbol Parameter NDS8410 Units VDSS Drain-Source Voltage 30 V VGSS , Thermal Resistance, Junction-to-Case NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , , VGS = 10 V 5.6 nC 14 nC NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical Characteristics 3 VGS =10V 6.0 5.0 4.5


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PDF NDS8410 NDS8410
1997 - CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410
Text: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , NDS8410 Drain Current - Continuous 30 - Pulsed V ± 10 A ± 50 (Note 1a) 2.5 , , Junction-to-Case (Note 1) 25 °C/W © 1997 Fairchild Semiconductor Corporation NDS8410 Rev B2 , = 10 A, VGS = 10 V 14 80 ns 46 60 nC 5.6 nC 14 nC NDS8410 Rev B2 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical


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PDF NDS8410 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8410
Not Available

Abstract: No abstract text available
Text: FAIRCHILD SEM ICONDUCTO R TM February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance , Range (N o te1a ) NDS8410 30 20 ±10 ±50 2.5 1.2 1 -55 to 150 °C W Units V V A THERMAL CHARACTERISTICS


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PDF NDS8410 NDSS41
NDS8410

Abstract: No abstract text available
Text: 0 Na tional Semiconductor" May 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Symbol Parameter NDS8410 Units Voss Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V 'd Drain


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PDF NDS8410 0-020Q NDS8410
FZ 44 NS

Abstract: amplifier 40khz with gain 100 with 5v R11C10 5V50mA 593D IGD ldi NDS8410 LM2641MTC-ADJ LM2641 C819
Text: ) OV FET FET FOSC : LM2641 FET NDS8410 (VGS) 5V - VDIODE 4.3V NDS8410 VGS 24nC A 5 LM2641 SS SS


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PDF LM2641 nat2000 LM2641. LM2641 28-Lead FZ 44 NS amplifier 40khz with gain 100 with 5v R11C10 5V50mA 593D IGD ldi NDS8410 LM2641MTC-ADJ C819
R11C10

Abstract: LM2630 LM2640 LM2640MTC-ADJ NDS8410 MTC28
Text: ) FOSC OV FET FET : LM2640 FET NDS8410 (VGS) 5V - VDIODE 4.3V NDS8410 VGS 24nC A 5 LM2640 SS


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PDF LM2640 nat2000 LM2640 28-Lead LM2640MTC-ADJ MTC28 R11C10 LM2630 LM2640MTC-ADJ NDS8410 MTC28
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410 NDS8410A NDS8410S NDS8936 NDS8947 NDS9410A NDS9410S NDS9936 NDS9953A NDS9956A NDT014 NDT014L


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Not Available

Abstract: No abstract text available
Text: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VD,ODE = 4.3V. Referring to the NDS8410 data sheel, 1he curve Gate Charge


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PDF LM2640 LM2640
1998 - LM2641

Abstract: LM2641MTC-ADJ
Text: shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2641 LM2641 LM2641MTC-ADJ
1998 - Not Available

Abstract: No abstract text available
Text: ) Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2640 SNVS019B LM2640 28-Pin
mosfet cross reference

Abstract: SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: -8, Comp N/P NDS8410 FDS6690A SO-8, N NDS9959 NDS9959 SO-8, Dual N NDS8410A NDS8410A SO-8, N NDT014 NDT014 SOT-223, N NDS8426A NDS8426A SO-8, N NDT014L


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PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
1998 - LM2640

Abstract: LM2640MTC-ADJ
Text: typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the


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PDF LM2640 LM2640 LM2640MTC-ADJ
2001 - CDRH125-100MC

Abstract: LM2640 LM2640MTC-ADJ LM2641 NDS8410
Text: shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2640 LM2640 CDRH125-100MC LM2640MTC-ADJ LM2641 NDS8410
1998 - Not Available

Abstract: No abstract text available
Text: ) Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V − VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2640 SNVS019B LM2640
2001 - IGD ldi

Abstract: No abstract text available
Text: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2641 28-pin 5-Aug-2002] IGD ldi
2001 - Not Available

Abstract: No abstract text available
Text: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2641 LM2641 SNVS040A
LM2641

Abstract: LM2641MTC-ADJ NDS8410
Text: frequency. Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) Is 5V - VD|ode = 4.3V. Referring to the NDS8410 data sheet, the curve Gate


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PDF LM2641 LM2641 LM2641MTC-ADJ NDS8410
2001 - 593D

Abstract: LM2641 LM2641MTC-ADJ NDS8410 960HZ
Text: NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the gate charge for this value of


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PDF LM2641 LM2641 593D LM2641MTC-ADJ NDS8410 960HZ
V3W amplifier

Abstract: No abstract text available
Text: NDS8410 is used with the LM2640, the tum-on gate voltage (VGS) is 5V - VD,ODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the gate charge for this value of VGS


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PDF LM2640 V3W amplifier
1998 - Not Available

Abstract: No abstract text available
Text: ) Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V − VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2640 SNVS019B LM2640
2000 - LM2641

Abstract: LM2641MTC-ADJ
Text: Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge


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PDF LM2641 LM2641 LM2641MTC-ADJ
2001 - Not Available

Abstract: No abstract text available
Text: frequency. Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate


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PDF LM2640 LM2640 SNVS019A
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