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Fairchild Semiconductor Corporation
NDP7061 Trans MOSFET N-CH 60V 64A Automotive 3-Pin(3+Tab) TO-220AB
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NDP7061 datasheet (9)

Part Manufacturer Description Type PDF
NDP7061 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDP7061 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDP7061 Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDP7061 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
NDP7061L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDP7061L Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

NDP7061 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
T64A

Abstract: NDB7061 NDP7061
Text: N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor May 1996 General , Parameter NDP7061 NDB7061 Units v "res Drain-Source Voltage 60 V V "dgr Drain-Gate Voltage < 1 MQ) 60 V , temperature for soldering purposes, 1/8" from case for 5 seconds 275 °c NDP7061 Rev. C / NDB7061 Rev. D , Charge 37.5 nC NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (Tc = 25 °C , /W Note: 1. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev. D


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PDF NDP7061 NDB7061 NDB7061 T64A
Not Available

Abstract: No abstract text available
Text: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , SS T c = 2 5 ^0 unless otherw ise noted NDP7061 60 60 ±20 ±40 64 190 130 0.87 -65 to 175 275 , seconds \ °c NDP7061 Rev. C / NDB7061 Rev D Electrical Characteristics Symbol Parameter w , V 67 11 37.5 NDP7061 Rev. C / NDB7061 Rev D Electrical Characteristics (Tc= 2 5 cCunless , Test: Pulse W idth < 300 |i£, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev D NDP7061 Rev. C


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PDF NDP7061 NDB7061
Not Available

Abstract: No abstract text available
Text: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , 0.87 W/G -65 to 175 °C 275 °C NDP7061 Rev. C / NDB7061 Rev. D Electrical , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (Tc = 25 °C unless otherwise noted) Sym b , ^ e iA N ote: 1. Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.C NDP7061 Rev. C / NDB7061 , Variation with Temperature NDP7061 Rev. C / NDB7061 Rev. D Typical Electrical Characteristics


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PDF NDP7061 NDB7061 NDB7061
transistor FS 18 SM

Abstract: No abstract text available
Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor , otherw ise noted NDP7061L 60 60 ±16 ±25 60 180 130 0.87 -65 to 175 NDB7061 L Units V V V A W W/ NDP7061 L Rev Cl , 430 63 240 52 9 28 35 600 120 400 75 nS nS nS nS nC nC nC NDP7061 L Rev Cl Electrical , o1e: 1.15 62.5 ÜW ÜW 1. PulseTest: Pulse Widlh < 30 0 |as, Duty Cycle < 2.0% NDP7061 L Rev


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PDF NDP7061 NDB7061L transistor FS 18 SM
1996 - NDB7061

Abstract: NDP7061 64a through hole diode
Text: N May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , NDP7061 NDB7061 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , -65 to 175 °C 275 °C NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (T , , VGS = 10 V 11 nC 37.5 nC NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics , /W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev


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PDF NDP7061 NDB7061 NDB7061 64a through hole diode
1997 - zener diode 3.0 b2

Abstract: zener diodes color coded F63TNR CBVK741B019 NDP7061 NDP4060L NDB7061 L86Z FDP7060 m 9835
Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , Parameter NDP7061 VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol , 64 A, VGS = 10 V, RGEN = 5 150 nS 67 100 nC 11 nC 37.5 nC NDP7061 Rev , , Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev


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PDF NDP7061 NDB7061 zener diode 3.0 b2 zener diodes color coded F63TNR CBVK741B019 NDP4060L NDB7061 L86Z FDP7060 m 9835
1997 - CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L NDP7061
Text: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , Parameter NDP7061 VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol , 64 A, VGS = 10 V, RGEN = 5 150 nS 67 100 nC 11 nC 37.5 nC NDP7061 Rev , , Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev


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PDF NDP7061 NDB7061 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L
NDB7061L

Abstract: NDP7061 NDP7061L
Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect , Parameter NDP7061 L NDB7061L Units v "res Drain-Source Voltage 60 V V "dgr Drain-Gate Voltage < 1 MQ) 60 , 'C 0.87 W/ NDP7061L Rev.Cl , NDP7061L Rev.Cl Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS , , Junction-to-Ambient 62.5 ÜW Note: 1. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.C NDP7061L Rev.Cl


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PDF NDP7061 NDB7061L NDP7061L NDB7061L
NDB7061

Abstract: NDP7061 LD 8105 d0403
Text: J^J National May 1996 m^J Semiconductorm NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 64A, 60V. RDS(0N1 = 0.016£2@ VGS= 10V. effect transistors are produced using National's . Critica| DC electrical parameters specified at proprietary, high cell density, DMOS technology. elevated temperature , Ratings Tc = 25°C unless otherwise noted Symbol Parameter NDP7061 NDB7061 Units Vcss Drain-Source


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PDF NDP7061 NDB7061 Ru99ed D04031L LD 8105 d0403
mosfet cross reference

Abstract: SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: SMP60N06 NDP7061 TO-220, N Si6968DQ^ NDH8303N TSSOP-8, Dual N SMP60N06-14 NDP7061L , IRF1010E NDP7061L TO-220, N IRF7309 FDS8958A SO-8, Comp N/P IRF1010N NDP7060L TO , Recommended Part Number Fairchild Device NDP7061 NDP7061 TO-220, N NDS9435A FDS9435A NDP7061L NDP7061L TO-220, N NDS9925A NDS9925A SO-8, Dual N NDP708A NDP708A TO , TO-220, N Si9802DY NDS9925A SO-8, Dual N SUP60N06-18 NDP7061 TO-220, N Si9803DY


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PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Not Available

Abstract: No abstract text available
Text: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p ow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide , 25°C unless otherwise noted Symbol Parameter NDP7061L NDB7061L Units v VDSS


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PDF NDP7061 NDB7061L P7061L
1998 - IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 philips 435-2 BUZ110S IRF3205 TO-220 harris 4365 motorola 4360
Text: HUF75343P3 NBP6050 NBP6060 NDB7050 NDB7061 NDP6050 NDP6060 NDP7050 NDP7061 TO-263 TO-263 TO-263 TO


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PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 philips 435-2 IRF3205 TO-220 harris 4365 motorola 4360
12SnOFC

Abstract: BQ37 PMC-90 MKT-TO220B03 PMC-90 leadframe material HRF3205 equivalent mosfet number Tamac4 FDP3672 a105 transistor HRF3205 equivalent
Text: ISL9N302AP3 ISL9N306AP3 ISL9N310AP3 ISL9N7030BLP3 NDP4050L NDP6020P NDP603AL NDP7050 NDP7061


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PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 MKT-TO220B03 PMC-90 leadframe material HRF3205 equivalent mosfet number Tamac4 FDP3672 a105 transistor HRF3205 equivalent
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410 NDS8410A NDS8410S NDS8936


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: /NDP7052L NDB/NDP7060 NDB/NDP7060L NDB/ NDP7061 NDB/ NDP7061L NDB/NDP708A NDB/NDP710A NDC631N NDC632P


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: No file text available


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
1996 - NDB7061L

Abstract: NDP7061L
Text: N June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect , NDP7061L NDB7061L Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , Operating and Storage Temperature Range NDP7061L Rev.C1 Electrical Characteristics (T C Symbol , 60 A , VGS = 5 V 18 400 nS 52 75 nC 9 nC 28 nC NDP7061L Rev.C1 , /W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061L Rev.C1 Typical


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PDF NDP7061L NDB7061L NDB7061L
1997 - zener diode 3.0 b2

Abstract: m 9835 NDP4060L NDB7061L L86Z FDP7060 F63TNR EO70 CBVK741B019 NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter NDP7061L VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation A NDP7061L , 240 400 nS 52 75 nC 9 nC 28 nC NDP7061L Rev.C1 Electrical , . Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061L Rev.C1 Typical Electrical


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PDF NDP7061L NDB7061L zener diode 3.0 b2 m 9835 NDP4060L NDB7061L L86Z FDP7060 F63TNR EO70 CBVK741B019
diode 8109

Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Text: Jtl National June 1996 mj^ Semiconductor" NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 60 A, 60 V. R^,^ = 0.018 i2@ VGS= 5 V power field effect transistors are produced using RDSl0NI = 0.013 C2 @ VGS= 10 V. National's proprietary, high cell density, DMOS , technology. This very high , °C unless otherwise noted Symbol Parameter NDP7061L NDB7061L Units 8 Voss Drain-Source Voltage 60 V


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PDF NDP7061L/ NDB7061L bSD113D 004031b bS01130 diode 8109 DDH0312 NDP7061L W9 diode
1997 - CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter NDP7061L VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation A NDP7061L , 240 400 nS 52 75 nC 9 nC 28 nC NDP7061L Rev.C1 Electrical , . Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061L Rev.C1 Typical Electrical


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PDF NDP7061L NDB7061L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L
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