The Datasheet Archive

SF Impression Pixel

Search Stock (3)

  You can filter table by choosing multiple options from dropdownShowing 3 results of 3
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
NDC652P Fairchild Semiconductor Corporation Bristol Electronics 312 - -
NDC652P Fairchild Semiconductor Corporation Bristol Electronics 7,796 - -
NDC652P Fairchild Semiconductor Corporation Bristol Electronics 2,000 - -

No Results Found

Show More

NDC652P datasheet (8)

Part Manufacturer Description Type PDF
NDC652P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDC652P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original PDF
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDC652P Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
NDC652P_NF073 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDC652P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

NDC652P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
NDC652P

Abstract: No abstract text available
Text: N March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Parameter NDC652P Units Drain-Source Voltage -30 Gate-Source Voltage -Continuous ^0 Drain Current , , Junction-to-Ambient (Note la) 78 °C/W Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC652P Rev. D1 , nC Gate-Drain Charge 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (Ta = 25 , letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.( NDC652P Rev. D1 Typical


OCR Scan
PDF NDC652P NDC652P
1997 - NDC652P

Abstract: No abstract text available
Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units -30 V VDSS Drain-Source Voltage VGSS Gate-Source , , Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , < 2.0%. NDC652P Rev. D1 Typical Electrical Characteristics -10 -7.0 -6.0 -5.5 -5.0 -8


Original
PDF NDC652P NDC652P
1996 - NDC652P

Abstract: No abstract text available
Text: N March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source , (Note 1) 30 °C/W NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , %. NDC652P Rev. D1 -10 2.5 V GS = -10V -7.0 -6.0 -5.5 -5.0 -8 R DS(ON) , NORMALIZED


Original
PDF NDC652P NDC652P
1997 - CBVK741B019

Abstract: F63TNR FDC633N NDC652P r rca 631
Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units -30 V VDSS Drain-Source Voltage VGSS Gate-Source , , Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , < 2.0%. NDC652P Rev. D1 Typical Electrical Characteristics -10 -7.0 -6.0 -5.5 -5.0 -8


Original
PDF NDC652P CBVK741B019 F63TNR FDC633N NDC652P r rca 631
Not Available

Abstract: No abstract text available
Text: March 1996 N NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , th e rw ise n o te d Symbol Parameter NDC652P Units vDSS V Drain-Source Voltage , Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC652P Rev. D1 E L E C T R IC A L C , 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS Symbol (t a = 25°C u n le s s o th e , : Pulse Width < 3 0 0 p s , Duty Cycle < 2.C NDC652P Rev. D1 Typical Electrical Characteristics


OCR Scan
PDF NDC652P NDC652P
1997 - marking 652 fairchild

Abstract: No abstract text available
Text: qualification data Product NDC652P NDC652P_NF073 back to top © 2007 Fairchild Semiconductor Products | Design , 1: &E&Y (Binary Calendar Year Coding) Line 2: .652 NDC652P_NF073 Full Production N/A , March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Dissipation T A = 25°C unless otherwise noted NDC652P -30 -20 -2.4 -10 (Note 1a) (Note 1b) (Note 1c , , Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDC652P


Original
PDF NDC652P NF073 marking 652 fairchild
B5G1

Abstract: NDC652P Supersot 6
Text: fi National Semiconductor" March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , Parameter NDC652P Units Drain-Source Voltage -30 Gate-Source Voltage - Continuous -20 Drain Current -


OCR Scan
PDF NDC652P LS01130 B5G1 NDC652P Supersot 6
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: FDZ5047N FDN335N FDN361AN NDS352AP NDS332P FDN304P NDC651N NDC631N NDC652P NDC632P FDN359AN , NDC631N FDC633N FDC604P FDC638P FDC640P SI3447DV NDC651N NDC651N FDC654P NDC652P NDC652P


Original
PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
mosfet cross reference

Abstract: SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: IRLMS1902 NDC631N Micro6, N IRFL014 NDT014 SOT-223, N IRLMS5703 NDC652P Micro6, P , NDP603AL TO-220, N NDC651N NDC651N SSOT-6, N NDP6050 NDP6050 TO-220, N NDC652P NDC652P SSOT-6, P NDP6050L NDP6050L TO-220, N NDC7001C NDC7001C SSOT-6, Comp N/P , Si6801DQ^ NDH8320C TSSOP-8, Comp N/P Si3455DV NDC652P TSOP-6, P Si6803DQ^ NDH8320C


Original
PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
652p

Abstract: ir 652p
Text: F A IR C H IL D SEM ICONDUCTO R tm March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices , Ratings Symbol Parameter ^D S S ^G S S T a = 25°C unless otherw ise noted NDC652P -30 -20 -2.4 -10


OCR Scan
PDF NDC652P -10Voduct 652p ir 652p
NDT453N

Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
Text: 3 3 aos 0.1 0.16 0.2 P-Channel NDC632P FDC6304P* FDC6302P* NDC652P NDC7003P &2Saw 0.03


OCR Scan
PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
2002 - Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N FDC655AN complementary FDC645N fdc640p FDC633N FDC6305N
Text: 0.125 - - 6.2 3.6 1.6 NDC652P -30 Single 0.11 0.18 - - 5.5 2.4


Original
PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N FDC655AN complementary FDC645N fdc640p FDC633N FDC6305N
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: -phase BLDC Motor Drive for FDD Applications NDC652P P-Channel Logic-Level Enhancement Mode Field Effect


Original
PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: (Continued) Product ISL9N327AD3ST MMBF170 NDB603AL NDC631N NDC651N NDC652P NDC7002N NDC7003P NDH8304P


Original
PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: STP16NF06 MTP3055V NDC652P STT3PF30L STP55NF06 NDP6060 STP45NF06 STS6NF20V NDS8425 STS6PF30L


Original
PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: 1.6 NDC652P -30 Single 0.11 0.18 ­ ­ 10.5 2.4 1.6 FDC6304P -25


Original
PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: NDC651N NDC652P NDC7001C NDC7002N NDC7003P NDF0610 NDH8301N NDH8302P NDH8303N NDH8304P NDH831N


Original
PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: FDC658P -30 Single 0.05 0.075 FDC654P -30 Single 0.075 0.125 NDC652P -30 Single 0.11 0.18


Original
PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: SuperSOT-6 P-Channel FDC5614P -60 Single FDC658P -30 Single FDC654P -30 Single NDC652P -30


Original
PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


Original
PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: No file text available


Original
PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: Discrete Power Products ­ MOSFETs SuperSOT-6/TSOP-6 (Continued) BVDSS Min. (V) Config. NDC652P


Original
PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: 1.6 FDC654P -30 Single 0.075 0.125 ­ ­ 6.2 3.6 1.6 NDC652P -30


Original
PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
PM2104

Abstract: PM2105 BAV99ZXCT BAV99ZXCT-ND IRFD9120 IRFD9120 N CHANNEL SURFACE MOUNT RESISTOR BCW60D BCX70K NDC652PCT
Text: .: BC847C Power MOS Switch Fairchild Semi. (Digi-key PN: NDC652PCT-ND ) National Semi. PN: NDS332P


Original
PDF PM2107 PM2107, AP2798 PM2104 PM2105 BAV99ZXCT BAV99ZXCT-ND IRFD9120 IRFD9120 N CHANNEL SURFACE MOUNT RESISTOR BCW60D BCX70K NDC652PCT
Supplyframe Tracking Pixel