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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
NDC632P Fairchild Semiconductor Corporation Rochester Electronics 1,470 $0.22 $0.18
NDC632P Fairchild Semiconductor Corporation America II Electronics 1,562 - -
NDC632P Fairchild Semiconductor Corporation ComS.I.T. 2,215 - -

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NDC632P datasheet (8)

Part Manufacturer Description Type PDF
NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original PDF
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
NDC632P Toshiba Power MOSFETs Cross Reference Guide Original PDF
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
NDC632P_NF073 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original PDF
NDC632P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original PDF

NDC632P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - NDC632P

Abstract: No abstract text available
Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , , Junction-to-Case (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC632P Rev. B1 , nC 1.8 nC NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. NDC632P Rev. B1 Typical Electrical Characteristics -15 2 -3.5 -12 -9 RDS(ON


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PDF June1996 NDC632P NDC632P
NDC632P

Abstract: No abstract text available
Text: N Junel996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , . SuperSOT™-6 AbSOlUte Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter NDC632P , , Junction-to-Ambient (Note la) 78 °C/W Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC632P Rev. B1 , Gate-Source Charge t= -5-7 A, VGS = 4.5 V 1.7 nC Gate-Drain Charge 1.8 nC NDC632P Rev. B1 , copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.( NDC632P


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PDF Junel996 NDC632P NDC632P
1997 - CBVK741B019

Abstract: F63TNR FDC633N NDC632P RCA 014
Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , , Junction-to-Case (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC632P Rev. B1 , nC 1.8 nC NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. NDC632P Rev. B1 Typical Electrical Characteristics -15 2 -3.5 -12 -9 RDS(ON


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PDF June1996 NDC632P CBVK741B019 F63TNR FDC633N NDC632P RCA 014
1996 - NDC632P

Abstract: No abstract text available
Text: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , Thermal Resistance, Junction-to-Case NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , VDS = -5 V, ID = -2.7 A, VGS = -4.5 V 1.7 nC 1.8 nC NDC632P Rev. B1 ELECTRICAL , Cycle < 2.0%. NDC632P Rev. B1 Typical Electrical Characteristics 2 VGS =-5V -4.5 -4.0 -3.5


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PDF June1996 NDC632P NDC632P
diode 6t6

Abstract: NDC632P
Text: e» National Semiconductor' June 1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , otherwise noted Symbol Parameter NDC632P Units Drain-Source Voltage -20 Gate-Source Voltage -


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PDF NDC632P Supe202 diode 6t6 NDC632P
Not Available

Abstract: No abstract text available
Text: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS technology. This very high density pro cess is especially tailored to m inim ize on-state resistan ce. T hese devices are , noted Symbol Parameter NDC632P Drain-Source Voltage Units ^0 Gate-Source Voltage


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PDF Junel996 NDC632P
NDT453N

Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
Text: 3 3 aos 0.1 0.16 0.2 P-Channel NDC632P FDC6304P* FDC6302P* NDC652P NDC7003P &2Saw 0.03


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PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
08390

Abstract: CDRH6D28-100 08149 MAX1701 NDC632P
Text: 2.7V to 5.5V Input 2 (POK, LBO UNUSED) 6 16 to OUT 1 4 8 C7 0.22 3 L1 10uH Sumida CDRH6D28-100 (10uH 1.7A) LBN LXP POK LBO POUT MAX1701 LBP OUT FB 14 R1 10 C3 0.22 AIN C4 100uF 6.3V C5 100pF R3 215k R4 100k 9 10 R5 205k ONB\ PGND GND 12 C2 220 uF R2 6.3V 20k 11 C6 560pF AO Q1 NDC632P 3.8V 0.8A 15 REF 7 D1 Nihon EC21 QS03L 13 CLK/SEL ONA C1 220uF 6.3V AVX TPS R6 100k 5


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PDF CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF 08390 CDRH6D28-100 08149 MAX1701 NDC632P
transistor 632p

Abstract: 632p
Text: F A I R C H I L D tm Junel 996 M ICDNDUCTQ R NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance , Symbol Parameter ^DSS ^GSS T a = 25°C unless otherw ise noted NDC632P -20 -8 -2.7 -10 (Note 1a


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PDF NDC632P transistor 632p 632p
mosfet cross reference

Abstract: SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: IRFL4105 FDT5060L SOT-223, N IRLMS6702 NDC632P Micro6, P IRFL9014 NDT2955 SOT , NDC631N SSOT-6, N NDP6030PL NDP6030PL TO-220, P NDC632P NDC632P SSOT-6, P NDP603AL


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PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: FDZ5047N FDN335N FDN361AN NDS352AP NDS332P FDN304P NDC651N NDC631N NDC652P NDC632P FDN359AN


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: /NDP7052L NDB/NDP7060 NDB/NDP7060L NDB/NDP7061 NDB/NDP7061L NDB/NDP708A NDB/NDP710A NDC631N NDC632P


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: No file text available


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
SONY APS 252 power supply

Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Text: No file text available


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PDF CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF SONY APS 252 power supply 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
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