The Datasheet Archive

NDB708BE datasheet (4)

Part Manufacturer Description Type PDF
NDB708BE Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
NDB708BE National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
NDB708BE National Semiconductor TO-263AB DMOS Power MOSFET Scan PDF
NDB708BEL National Semiconductor TO-263AB Logic Level DMOS Power MOSFETS Scan PDF

NDB708BE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: M ay 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE , NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE Symbol Parameter ^D SS , NDP708AE NDP708BE NDB708AE NDB708BE Maximum Drain-Source Avalanche Current VD = 25 V, lD= 60 A D , £2 NDP708B NDP708BE NDB708B NDB708BE VG = 10V, S Id = 27 A 9 fs Forward Transconductance NDP708A NDP708AE NDB708A NDB708AE 60 A NDP708B NDP708BE NDB708B NDB708BE ^D(on


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PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708
708B

Abstract: NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B
Text: May 1994 N NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE , NDB708AE NDP708B NDP708BE NDB708B NDB708BE Units ^DSS Drain-Source Voltage 80 V ^DGR Drain-Gate Voltage , NDB708AE NDB708BE 600 mJ Ur Maximum Drain-Source Avalanche Current 60 A OFF CHARACTERISTICS , NDB708B NDB708BE 0.25 Q. ^ = 125^ 0.044 Q. 'd(oii) On-State Drain Current VGS = 10V,VDS = 10V NDP708A NDP708AE NDB708A NDB708AE 60 A NDP708B NDP708BE NDB708B NDB708BE 54 A 9fs Forward


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PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 708B
10V4Z

Abstract: 708B
Text: / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor , NDB708A NDB708AE 80 80 120 ±40 60 180 150 1 NDP708B NDP708BE NDB708B NDB708BE Units V V V V ^D , Energy VD D = 25 V, lD = 60 A NDP708AE NDP708BE NDB708AE NDB708BE 600 60 mJ A Ur Maximum , NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE 60 0.025 0.04 0.25 £2 £2 0.044 £2 ^D(on) On-State Drain Current


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PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 10V4Z 708B
1997 - NDB708A

Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
Text: N May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE , NDB708A NDB708AE Symbol Parameter NDP708B NDP708BE NDB708B NDB708BE Units VDSS , IAR NDP708AE NDP708BE NDB708AE NDB708BE Maximum Drain-Source Avalanche Current OFF , NDP708B NDP708BE NDB708B NDB708BE gFS On-State Drain Current V NDP708B NDP708BE NDB708B NDB708BE VGS = 10 V, ID = 27 A ID(on) 4 NDP708A NDP708AE NDB708A NDB708AE TJ = 125


Original
PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 NDB708BE NDP708BE
1997 - NDB708A

Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
Text: May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE , NDB708A NDB708AE Symbol Parameter NDP708B NDP708BE NDB708B NDB708BE Units VDSS , Drain-Source Avalanche Energy VDD = 25 V, ID = 60 A IAR NDP708AE NDP708BE NDB708AE NDB708BE , Transconductance NDP708A NDP708AE NDB708A NDB708AE 60 A NDP708B NDP708BE NDB708B NDB708BE gFS On-State Drain Current V NDP708B NDP708BE NDB708B NDB708BE VGS = 10 V, ID = 27 A ID(on


Original
PDF NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 NDB708BE NDP708BE
NDB406B

Abstract: National Semiconductor Discrete catalog NDB605A NDB610BE NDB610B NDB610AE NDB610A NDB510B NDB510AE NDB405A
Text: Power MOSFETS (continued) TO-263AB DMOS bfiE D ■bSG113Q DQam^a 3TT NATL SEflICOND (DISCRETE) INSCS o 2 O (/) 2 o N Channel (Volts) Min 100 80 Device NDB710A NDB710AE NDB710B NDB710BE NDB610A NDB610AE NDB610B NDB610BE NDB510A NDB510AE NDB510B NDB510BE NDB410A NDB410AE NDB410B NDB410BE NDB708A NDB708AE NDB708B NDB708BE NDB608A NDB608AE NDB608B NDB608BE NDB508A NDB508AE NDB508B NDB508BE NDB408A NDB408AE NDB408B NDB408BE (mQ) Max 38 42 65 80 120 (Amps/Vofts) 21


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PDF O-263AB bSG113Q NDB710A NDB710AE NDB710B NDB710BE NDB610A NDB610AE NDB610B NDB610BE NDB406B National Semiconductor Discrete catalog NDB605A NDB610BE NDB610B NDB610AE NDB610A NDB510B NDB510AE NDB405A
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
NDB406B

Abstract: NDB406BL NDB710AEL NDB610BL NDB610BEL NDB610AL NDB610AEL NDB510BEL NDB510AL NDB510AEL
Text: NDB410BEL N0B410BL 300 3.5/5 7 80 NDB708AEL NDB708AL 22 19/5 60 150 NDB708BEL NDB708BL 25 18/5 52


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PDF bSD113D O-263AB NDB710AEL NDB710AL NDB710BEL NDB710BL NDB610AEL NDB610AL NDB610BEL NDB610BL NDB406B NDB406BL NDB510BEL NDB510AL NDB510AEL
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