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Not Available

Abstract: No abstract text available
Text: margin­ ing of data. Even the write-intensive systems can take advan­ tage of the KM 29N32000 extended , . The KM 29N32000 is an optimum solution for large nonvolatile storage applications such as solid state , nonvolatility. PIN CONFIGURATION 3 C M VSSI= 1 _ CLEi= ALEi= 3 W Ec 4 W Pc 5 N.CC 6 N.Cc 7 N.Cc 8 N.CC 9 N.CC 10 11 12 N.CC 13 N.Cc 14 N.Cc 15 N.Cc 16 N.Cc 17 l/OOc 18 1/01 c 19 I , AC TEST CONDITION (KM29N32000T:T a =0 to 70°C, KM 29N32000IT:T a =-40 to 85°C, Vcc=5V ±10% Param


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PDF KM29N32000T, KM29N32000IT 29V32000 KM29N32000 KM29W32000
681000BLP-7L

Abstract: 681000BLP B8100 KM681000BI 681000BLG
Text: Dissipation "H 1 »liniii r In,till r» roouci r anwy KM 681000BL KM 681000BL-L KM 681000BLE KM 681000BLE-L KM 681000B L 1 KM 681000BU-L Industria l(-40-85"C) 70 Extended{-25~85-C) 4.5 to 5.5V 70 Operating , I*» 32-TSOP Typel - Forward 3VSS 32 3VCC N.CC ' 0 3 1 3A1S AieC 2 3 30 3CS2 A1«C 28 3fcP A12 C 4 , i A15C ; NCC I 32-TSO P Typel-Reverse 22 3 * 5 2 p rjwn 2 * VSS 2 3WX W E! 1= ® 2 , KM 6S10008LG I-7L K M 681000B C n-7L KM S810a08(.R)-7L F w w t ìo n 32-SO P, 70ra,IX-pw r 32-T SO P F


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PDF KM681000B 128Kx8 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 681000BLP-7L 681000BLP B8100 KM681000BI 681000BLG
Not Available

Abstract: No abstract text available
Text: ) - Forward Type The KM 29V16000A is a 2M(2,097,152)x8bit NAND Flash M em ­ ory with a spare 64K , write-intensive systems can take advan­ tage of the KM 29V16000A extended reliability of 1,000,000 program , combined with the other 256 bytes can be utilized by system-level ECC. The KM 29V16000A is an optimum , CONFIGURATION VSSI= CLEi= ALEi= W Ec W Pc N .C c N ,C c N .C c N .C c N.CC 1 2„ o 3 4 5 6 7 8 9 10 11 12 N.CC 13 N.CC 14 N.CC 15 N.CC 16 N.CC 17 I/OOC 18 1/01 c 19 I/02C 20 I


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PDF KM29V16000ATS
2007 - NFO-125-1

Abstract: CAN24TST120 EN2267 BMS 13-60 wire M27500- twisted pair NF24-2Q100 EN2714-013 NF24Q100-01 NFO-125-3 NF24P100
Text: /91 /92 SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/ km ) 26 24 , SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/ km ) Min 2 1 0 00 , SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/ km ) Min 26 24 22 , N = NCC Shield ­ 22 26 to 10 S T = Tin Coated Copper S = Silver Coated Copper SA = Silver , ° N = NCC Shield* 26 to 2 26 to 4/0 150° 200° 260° T = TCC Shield S = SCC Shield N = NCC


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km418c256

Abstract: KM418C256J
Text: fabricated using Samsung's advanc ed CMOS process KM 418C 256- 7 KM 418C 256- 8 K M 4 18 C 2 5 6 -10 , , to DQ« D Q .C 4 DÛ4 £ 5 V ccC 6 D ûs C 7 dqb c 8 DO 7 C 9 D ûs C 10 DQ , C 1 NCC DQ., to 12 4 0 I


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PDF KM418C256 km418c256 KM418C256J
41C16100

Abstract: No abstract text available
Text: Performance range: tRAC KM 41C 161 0 0-6 K M 41C 16100-7 K M 41C 16100-8 · · · · · · · · · · 60ns 70ns 80ns tcAC 15ns 20ns 20ns tRC 1 10ns 130ns 150ns The KM 41C 16 1 0 0 features Fast Page Mode operation which , CONFIGURATION KM41C16100J V ccC 1 0 DC 2 N.CC 3 w c 4 RÄSC 5 An C 6 24 Vss 23 Q 22 "2 N.C 21 CÄ3 20 N.C 19 , 10 11 12 A,o Ao A, A, f -VssC 24 Q C 23 N.C C 22 C Ä 5C 21 N.CC 20 Ag C 19 VssC 13 , , Address Cycling @ KM 41C 16 1 0 0-6 KM 41C16100-7 KM 41C 16 1 0 0-8 KM 41C 16100-6 KM 41C 16100-7 K M 41C


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PDF KM41C16100 130ns 150ns 24-LEAD 41C16100
2012 - 3050

Abstract: No abstract text available
Text: Power supply current ICC - TBD Power supply noise Ncc - - 100 Ambient , Modules Wavelength (nm) Distance ( Km ) Output Power (dBm) SFP-VDTT-CC-MM/SM 1310 MM , Specifications SFP Modules Distance ( Km ) 1530 SM 30-50 0 to +3 -18 SFP Modules


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Not Available

Abstract: No abstract text available
Text: C NCc Vss t O E /O E C QoC Os C Qi C PIN CONFIGURATION < < < < < z< < < < < m® £0 - , DIMENSIONS 40 LEAD PLASTIC DUAL IN LINE PACKAGE ( KM 23C4100H) CMOS MASK ROM U nits: Inches (m illim e ters) 44 LEAD QUAD FLAT PACKAGE ( KM 23C 4100H FP) 279 ELECTRONICS


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PDF KM23C4100H 8/256K 100ns 100/iA 40-pin 44-pin 23C4100H)
m514260

Abstract: HM514260-7 HM514260 HM514260JP8 HM514260-8 HM514260ZP HM514260ZP-10 HM514260-10 HM514260JP-7 HM514260JP-10
Text: I/07 C 10 31 □ I/08 I/07 20 NCC 11 30 □ NC NC 22 NC C 12 29 □ LCAS RAS 24 WEC 13 28 □ UCAS AO 26 RASH 14 27 □ OE A2 28 NCC 15 26 □ A8 Vcc 30 AO C 16 25 □ A7 A4 32 A1 C 17 24 â , 31 □ LCAS WEC 15 30 □ ÜCÄS RAS C 16 29 □ OE NCC 17 28 □ A8 AO C 18 27 □ A7 A1 C 19 , HITACHI/ LOGIC/ARRAYS/MEM - RAS OCXS ccss .1 X Address S ^_Wd tRSH km _ "■CUP Row m , CAS ^ "V v .A "S H ► "ASC Km «-► XRSH —H Col. twCH lWCS tm .r CRP ¿ZZZk


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PDF DDE3136 HM514260, HM514260L 144-word 16-bit HM514260 16-bit. m514260 HM514260-7 HM514260JP8 HM514260-8 HM514260ZP HM514260ZP-10 HM514260-10 HM514260JP-7 HM514260JP-10
Not Available

Abstract: No abstract text available
Text: DQa v d d q O o DQa NC O o NC DQa o O 0 NC 0 NC 0 NC O DQa O Vddq C NCC NCC NCC NCC vs s C NCC DObiz DQbC VssC VDDQC DQbC DQbC NCC V ddC s vdd o NC O DQb O Vd dq o DQb o NC O , 0 NC v d d q / 1 o ncC vs s C DObCZ DQbC vddqCI V ssC DQbC DQbC DQbC NCC V ssC , - TQFP (See Note 1) Rating Junction to Ambient (@ 200 Km ) Junction to Board (Bottom) Junction to


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PDF MCM69P819 69P819 MCM69P819ZP4 MCM69P819ZP4R MCM69P819TQ4 MCM69P819TQ4R MCM69PB19ZP3 MCM69P819ZP3
Not Available

Abstract: No abstract text available
Text: clock cycles required to find it, NCC , is used to calculate the position of the error. The calculation , as follows: ED = NCC -1 (where ED is the Error Displacement in bits, NCC is the Number of Clock , data field, instead of the ECC field. The calculation would then be: ED = NCC - 33. Note that the Error , is increased. Figure 6. Clock and Hold Timing Monollthlo KM Memories 7-47 SiBER 673480 Absolute , Monollthlo KM Momorlas 7-51 SiBER 673480 \ .r -'gss (2) (1) DATA VALID ^ DATA VALID ^ DATA VALID


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PDF 16-bit 32-bft
Not Available

Abstract: No abstract text available
Text: 28 29 NC( 30 NCd 31 NCC 32 NC[ NC[ NC[ VSYNC[ 0SCIN[ SCOUT[ Slk [ VB[ VG[ VG[ VSS[ 0 79 78 77 76 , KM M EUKnM M CS 326


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PDF ST63RS1 ST63XX ST63RS1 128/FOSC ST63RT1
FM Stereo Decoder Integrated Circuit

Abstract: TAA630S TBA510 TBA520 TBA970 MA767C 19KHZ
Text: DECOUPLING 13 38 kHz FILTER 12 ] RIGHT OUT 11 ] LEFT OUT 38 kHz FILTER -J BIAS NcC STEREO LAMP|~ GND , -'y RMS STEREO SIGNAL (NOTE 3I 1-1.0 Mil (N0TE3I \ V* ' + 12V ! t -1.0 km iTONAURAL OR STEREO WITH


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PDF //A3064 //A3065 TBA970 //A746, //A780, //A781, //A787, //A788 TAA630S, TBA510, FM Stereo Decoder Integrated Circuit TAA630S TBA510 TBA520 TBA970 MA767C 19KHZ
Not Available

Abstract: No abstract text available
Text: 17 £ y KM A H 11 asE ab H A13C /W P E CS2 P A15 P Vcc C N.C 2 A 2 1B A14 P , C A7 C A12 C A14 C A16 C NCC Vcc C A15 C C C S2 32-Pin T S O P T yp e I - Forward 32 , Name Function KM 68V1000BLG -7 32-SO P , 70ns, 3.3V , L K M 68V1000B LG E -7 32-S O P , 70ns, 3.3V , L KM 68V1000BLG I-7 32-S O p ; 70ns, 3.3V , L KM68V10Ö0BLG-7L 32-SO P , 70ns, 3.3V , LL K M 68V1000B LG E -7L 3 2-S O P , 70ns, 3.3V , LL KM 68V1000BLG I-7L 32-S O P


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PDF KM68V1000B, KM68U1000B 128Kx8 DD23b66
Not Available

Abstract: No abstract text available
Text: . Ai C Ao C CE/CE C Ao - Y B u ffers and D ecoder NCc Vss c 5 6 7 2 S O SEN , 435 KM23C4100H PACKAGE DIMENSIONS 40 LEAD PLASTIC DUAL IN LINE PACKAGE ( KM 23C4100H) CMOS , : Inches (m illim eters) 44 LEAD QUAD FLAT PACKAGE ( KM 23C4100HFP2) x 2 eg SAM SUNG Electronics


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PDF KM23C4100H 8/256K 100ns 40-pin 44-pin KM23C41OOH 23C4100H) KM23C4100HFP1)
Not Available

Abstract: No abstract text available
Text: c A15 C Au C A i 3C NCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 , Noise: [1] WE Is high tor a read cycle. [2] Address vald prior to or cotacktent with the km transition


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PDF fiPD431009 /PD431009 072-word /L/PD431009 36-pin 36-pin, 400-mil jLfPD431009
km6161000blti

Abstract: FTC 960 6161000BL
Text: Standby KM .61.61.000BLT/LT-L KM6161Ö0ÖBLR/LR-L Commercial (0-70 °C) 4.5 , mC A7C X*E A»C uC koi«c imiC vouC W013IZ VmC vwE U012C noil C votoC vote N.CC MC MC _ A10C 23 Alt C n.cc 23 » 2? o 44-Pin Reverse o o< 3 A4 2 3A3 3 3A2 4 3 Al t 3 M * 3 ics 7 3 voi


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PDF KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL
LTHJ

Abstract: No abstract text available
Text: RC7341KM RC7342PN RC7342QC RC7342KM Package PN QC QCA KM PN QC KM b4E D 7 S T 7 3 b D D G D Ö 1 Ö , -883, Level B processing PN - 16-lead SOIC QC 20-lead PLCC QCA . 28-lead PLCC KM . 16-lead PDIP Connection , * GND[ 6 *N C [ LEA[ 8 tÊ Â [ 9 NCC 10 Me e [ 11 1 28 27 26 29 ] NC 24 : GND 22 : NC 22 : LEB 21 j


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PDF 173bO RC7341/RC7342 RC7341/42 RC7341) RC7342) RC7342 RC7341 LTHJ
Not Available

Abstract: No abstract text available
Text: micro processor, and data memory, character generator The KM 23C8100FP2 is packaged in a 64-QFP, pro , , , C 53 Aio C 54 Ag C 5 5 Aa C N.C.C Vss C Ai a C A,» d A; a6 As A4 C c C C 10 ; ^ O Ü O Ü Ü Ü Ü Ü Q U


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PDF KM23C8100FP2 150ns 64-pin KM23C81OOFP2 KM23C8100FP2)
Not Available

Abstract: No abstract text available
Text: RC7342PN RC7342QC RC7342KM Package PN QC QCA KM PN QC KM Operating Temperature Range 0°C to +70°C 0 , denotes MIL-STD-883, Level B processing PN - 16-lead SOIC QC - 20-lead PLCC QCA - 28-lead PLCC KM - 16 , LÊÂC 9 NCC 10 Notes: 1. Input disable mode not available on RC7342 SOIC and P-DIP package. 2. RC7341


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PDF RC7341/RC7342 RC7341/42 RC7341 RC7342 RC7341/ RC7342 RC7341/42
Not Available

Abstract: No abstract text available
Text: DESCRIPTION • Perform ance range; tC A C tR A C tR C 130ns KM 44C 266B- 7 2 0 ns 80ns 2 0 ns 150ns K M 44C 266B -10 • • • • • • • • • • 70ns KM , DIAGRAM RS3 — CSS — WB/W — The Samsung KM 44C 266B is a high speed CMOS 2 6 2 ,1 4 4 X 4 , mainframes and mini computers, graphics and high performance microprocessor systems. ’ The KM 44C 266B , L & CLOCK Wi/DQ, L ' . o u w2 /dq2C z wb/w C 3 m e 4 N.C.C 5 REFRESH CO N TR O L S


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PDF h43i42 KM44C266B 130ns 150ns 44C266B- 180ns 20-LEAD
Not Available

Abstract: No abstract text available
Text: ) FEATURES · Performance range: tRAC tCAC tRC GENERAL DESCRIPTION The Samsung KM 44C266B is a high , KM 44C266B features Fast Page Mode operation which allows high speed random access of memory cells , RAS-only Refresh. All inputs and output are fully TTL compatible. The KM 44C266B is fabricated using Samsung's advanc ed CMOS process. KM 44C266B- 7 KM 44C266B- 8 KM 44C 266B -10 · · · · · · · · · · , U W2 /DQ 2 C 2 W B/W C 3 R Ä 3C 4 N.C.C 5 COLUMN DECODER SENSE AMPS & I/O GATING Ao - MEMORY


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PDF KM44C266B 44C266B 20-LEAD T45T3
Not Available

Abstract: No abstract text available
Text: tR C 60ns 15ns 1 10ns KM 41C 16100-7 70ns 20ns 130ns KM 41C 16100-8 80ns 20ns 150ns KM 41C 16100-6 • • • • • • • • • • Fast Page Mode , ) packages FUNCTIONAL BLOCK DIAGRAM .RAS CAS The KM 41C 16 1 0 0 features Fast Page Mode operation , fully TTL com­ patible. The KM 41C 16100 is fabricated using Samsung's ad­ vanced CMOS process , MEMORY ARRAY 1 6 ,7 7 7 ,2 1 6 Cells f Vcc c DE □o □ N.C DC 2 NCC 3 W C 4 A „C


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PDF KM41C16100 130ns 150ns 24-LEAD
Not Available

Abstract: No abstract text available
Text: 1 10ns KM 41C 16100-7 70ns 20ns 130ns KM 41C 16100-8 80ns 20ns 150ns KM , FUNCTIONAL BLOCK DIAGRAM _R55— 1 CÄ 5— “ The KM 41C 16 1 0 0 features Fast Page Mode , process. PIN CONFIGURATION • KM41C16100T KM41C16100J CONTROl I CLOCK Vcc C 1 0 DC 2 N.CC , Operating Current* (RAS, CAS, Address Cycling @ tRc=min) KM 41C 16100-6 KM 41C16100-7 KM 41C 16100-8 , RAS-Only Refresh Current* (CAS=V ih, RAS, Address Cycling @ tRc=min.) KM 41C 16100-6 KM 41C 16100-7


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PDF b414S KM41C16100 130ns 150ns 10OfiF 7Tb4142 24-LEAD
Not Available

Abstract: No abstract text available
Text: Calculating Typical Values of Bus Pull-Up Resistors graph. 5 ZD SDA SOIC/MSOP PIN NAMES 1 NCC 2 NCC 3 Description No Connect Ground Supply Voltage Serial Data Serial Clock v ss Vcc SDA SCL „ 6 Z ] SCL 3837 FHD F02 NCC Symbol NC X24C01 m v cc 7 ZD NC VS , ALL END PINS OPTIONAL —N Km SEATING PLANE if i 0.150 (3.81) 0.125 (3.18) 0.110


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PDF X24C01 128x8 X24C01
Supplyframe Tracking Pixel