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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver

N-channel MOSFET 800v 50a to-247 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: package 3 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 10 45V 110.000A D-61 45V 110A Schottky Common Cathode , Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a , 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package FAX , : 0755-8380 8450 3 800V 3 Phase Bridge in a INT-A-Pak package 100V 110A Schottky Common Cathode Diode in a


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to , -TC3-T 12N80L-TF2-T 12N80G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO- 247 TO , 1 of 6 QW-R502-594.G 12N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless , Avalanche Current (Note 2) IAR 12 A TO- 247 360 W TO-3P 390 W Power Dissipation PD TO-230 167 W


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PDF 12N80 12N80 12N80L-T47-T QW-R502-594
2003 - TRIACS EQUIVALENT LIST

Abstract: 440v to 12v smps power supply 440v ac voltage regulator REG IC 48V IN 12V 10A OUT 440v to 12v smps power supply 50A dimmer diagrams IGBT 24v 12v 20A regulator FKPF12N60 600V igbt dc to dc buck converter drive motor 10A with transistor P channel MOSFET
Text: N-Channel PowerTrench MOSFET 300V, PT, N-Channel IGBT, TO- 247 Package PNP Epitaxial Silicon Transistor , 18 FDS3672/FDS3682/FDS3692/ FDS3992/FDS2572/FDS2582 60V trench MOSFET devices provide , load currents in excess of 50A from a 12V source with minimal external circuitry. This product is , functions · Injection systems · Overcurrent protection using MOSFET sensing · Distributed power , topologies 8 9 10 FKPF12N60/FKPF12N80 TinyLogic Ultra Low Power FOD2741A/B/C 600V/ 800V


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PDF FS8S0765RC new/fs8s0765rc FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 Power247TM, TRIACS EQUIVALENT LIST 440v to 12v smps power supply 440v ac voltage regulator REG IC 48V IN 12V 10A OUT 440v to 12v smps power supply 50A dimmer diagrams IGBT 24v 12v 20A regulator FKPF12N60 600V igbt dc to dc buck converter drive motor 10A with transistor P channel MOSFET
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology , : G: Gate D: Drain S: Source 12N80L-T47-T Package TO- 247 TO-3P TO-230 TO-220F2 Pin , Technologies Co., Ltd (2) T47: TO- 247 , T3P: TO-3P, TC3: TO-230, TF2: TO-220F2 (3) L: Lead Free, G: Halogen Free 1 of 7 QW-R502-594.F 12N80  Power MOSFET MARKING INFORMATION PACKAGE MARKING


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PDF 12N80 12N80 QW-R502-594
2006 - MOSFET 800V 10A

Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
Text: QFET ® FQA10N80C 800V N-Channel MOSFET Features Description · · · · · · These , - °C/W - 40 °C/W www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET , FQA10N80C Rev. A1 2 www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET Package Marking and Ordering Information FQA10N80C 800V N-Channel MOSFET Typical Performance Characteristics Figure 1 , www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching


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PDF FQA10N80C FQA10N80C MOSFET 800V 10A mosfet 10a 800v mosfet 10a 800v high power F109
24v 2a smps

Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
Text: HGTG30N60A4D, HGTG12N60A4D KMOS > 75KHz - KMOSF (Fast body diode MOSFET ) Analog Interface & Logic , / 800V 1A/650V 0.5A/650V 5A/650V 6A/ 800V 6A/ 800V 8A/ 800V 5A/650V 6A/ 800V 6A/ 800V 8A/ 800V 8A/ 800V 1A/650V 1A/650V 2A/650V 2A/650V 2A/ 800V 3A/650V 3A/ 800V 1A/650V 1A/650V 2A/650V 3A/650V 3A/650V 3A/ 800V 1A/650V 1A/650V 2A/650V 2A/650V 2A/ 800V 3A/650V 3A/650V 3A/ 800V 7A/650V 9A/650V 6A/ 800V 5A/650V 7A/400V Off-line Conversion ICs (cont.) 70KHz Power Switch 70KHz Power


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PDF 95Vac 264Vac 1500-AEQ 144Vdc/10A. 138Vdc 60-cell, 24v 2a smps smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
2013 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology , Unisonic Technologies Co., Ltd Package TO- 247 TO-3P TO-230 TO-220F1 TO-220F2 Pin Assignment 1 , QW-R502-594.E 12N80  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise , Current (Note 2) IAR 12 A TO- 247 360 W TO-3P 390 W Power Dissipation PD TO-230 167 W TO


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PDF 12N80 12N80 QW-R502-594
IXAN0068

Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l 400V linear regulator mosfet modern applications IXTN62N50L IXTK22N100L
Text: linear region of the Power MOSFET , which requires high power dissipation capability and extended Forward , using Power MOSFET , in which it functions like an "on-off switch" in switched-mode applications. In linear mode, the Power MOSFET is subjected to high thermal stress due to the simultaneous occurrence of , Figure 1: The Output Characteristics of an N-Channel Power MOSFET Figure 1 shows a typical output characteristic of an N-Channel Power MOSFET in which the different modes of operation are delineated. In the


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PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l 400V linear regulator mosfet modern applications IXTN62N50L IXTK22N100L
Not Available

Abstract: No abstract text available
Text: )227-6005 FAX: (973) 376-8960 STP12NK80Z - STB12NK80Z STW12NK80Z N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO- 247 Zener-Protected SuperMESH™Power MOSFET TYPE STP12NK80Z STB12NK80Z STW12NK80Z VDSS 800V 800V 800V RDS(on) Pw ID < 0.75 fl 10. 5 A < 0.75 Q 10. 5 A < 0.75 n 10.5 A , -220 D2PAK TO- 247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING . , Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Ti TO- 247


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PDF STP12NK80Z STB12NK80Z STW12NK80Z O-220 O-247 STP12NK80Z O-220
2013 - JEDEC24

Abstract: CPM2-1200-0025B solar charge circuit max 856 CPM2
Text: VDS 1200 V CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features , VDS = 800 V, VGS = -2/20 V ID = 50A , RG = 3.8, L= 856 H Per JEDEC24 pg 27 Fig. 6 Fig. 7 25 43 22 21 , 1.5 VDS = 800 V, VGS = -5/20 V ID = 50A , RG = 2.5, L= 856 H Per JEDEC24 pg 27 f = 1 MHz, VAC = 25 , pg 27 Note Fig. 16 Note (2): Tested in a TO- 247 Package 2 CPM2-1200-0025B Rev. - , VDS = 600V (Note (2) 10000 Ciss Figure 14. Inductive Switching Loss vs Drain Current VDS = 800V


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PDF CPM2-1200-0025B CPM2-1200-0025B JEDEC24 solar charge circuit max 856 CPM2
2009 - APT14M120B

Abstract: APT14M120S MIC4452
Text: APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , Single die MOSFET G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI · PFC , Torque ( TO- 247 Package), 6-32 or M3 screw MicrosemiWebsite-http://www.microsemi.com 04-2009 WT , Max Unit S pF 135 VGS = 0V, VDS = 0V to 800V 70 Qg Total Gate Charge Qgs


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PDF APT14M120B APT14M120S APT14M120B APT14M120S MIC4452
2009 - APT7M120B

Abstract: APT7M120S MIC4452
Text: APT7M120B APT7M120S 1200V, 8A, 2.1 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , Single die MOSFET G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI · PFC , Torque ( TO- 247 Package), 6-32 or M3 screw MicrosemiWebsite-http://www.microsemi.com 5-2009 WT , Max Unit S pF 75 VGS = 0V, VDS = 0V to 800V 38 Qg Total Gate Charge Qgs


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PDF APT7M120B APT7M120S APT7M120B APT7M120S MIC4452
Not Available

Abstract: No abstract text available
Text: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , D Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI , in·lbf 1.1 N·m Mounting Torque ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http , pF 135 VGS = 0V, VDS = 0V to 800V 70 Qg Total Gate Charge Qgs Gate-Source Charge


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PDF APT14M120B APT14M120S
2006 - APT14M120B

Abstract: APT14M120S MIC4452 Microsemi MOSFET 1200V
Text: APT14M120B APT14M120S 1200V, 14A, 1.20 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI , ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com oz g 10 , Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 800V


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PDF APT14M120B APT14M120S APT14M120B APT14M120S MIC4452 Microsemi MOSFET 1200V
Not Available

Abstract: No abstract text available
Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI â , in·lbf 1.1 N·m Mounting Torque ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http , pF 75 VGS = 0V, VDS = 0V to 800V 38 Qg Total Gate Charge Qgs Gate-Source Charge


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PDF APT7M120B APT7M120S
2011 - Not Available

Abstract: No abstract text available
Text: APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , the high avalanche energy capability. TO -24 7 D 3 PAK APT14M120B Single die MOSFET , Torque ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com Static , Max Unit S pF VGS = 0V, VDS = 0V to 800V 5 Effective Output Capacitance, Energy Related


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PDF APT14M120B APT14M120S
2006 - mosfet 1200V 3A

Abstract: APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
Text: APT7M120B APT7M120S 1200V, 7A, 2.50 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI , ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com oz g 10 , Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 800V


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PDF APT7M120B APT7M120S mosfet 1200V 3A APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
2011 - MOSFET 1200v 3a

Abstract: No abstract text available
Text: APT7M120B APT7M120S 1200V, 8A, 2.1 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . A proprietary planar stripe design yields excellent , the high avalanche energy capability. TO -24 7 D 3 PAK APT7M120B Single die MOSFET APT7M120S , Torque ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com Static , Max Unit S pF VGS = 0V, VDS = 0V to 800V 5 Effective Output Capacitance, Energy Related


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PDF APT7M120B APT7M120S MOSFET 1200v 3a
2012 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC's advanced technology to provide , SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO- 247 Pin Assignment 1 2 3 G , 1 of 5 QW-R502-735.a 9N100 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS , BVDSS VGS=0V, ID=250µA 1000 BVDSS/TJ ID=250A, Referenced to 25°C VDS=1000V, VGS=0V IDSS VDS= 800V , TC


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PDF 9N100 9N100 O-247 QW-R502-735
2003 - STW13NK100Z

Abstract: W13NK100Z
Text: STW13NK100Z N-CHANNEL 1000V - 0.56 - 13.5A TO- 247 Zener-Protected SuperMESHTMPower MOSFET TARGET , range of high voltage MOSFETs including revolutionary MDmeshTM products. 3 2 1 TO- 247 , W13NK100Z TO- 247 TUBE July 2003 1/6 STW13NK100Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR , 800V , Tj TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case , 0 S pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 800V TBD pF


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PDF STW13NK100Z O-247 STW13NK100Z W13NK100Z
2014 - 5n80

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET . It use UTC advanced technology to , Tube Tube 1 of 7 QW-R502-483.E 5N80  Power MOSFET MARKING INFORMATION PACKAGE , QW-R502-483.E 5N80  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise , -483.E 5N80  Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified


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PDF 5N80L-TA3-T QW-R502-483 5n80
Not Available

Abstract: No abstract text available
Text: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of , 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK5N100L Top View D TO- 247 , Quantity AOK5N100L TO- 247 Green Tube 240 Absolute Maximum Ratings TA=25° unless otherwise , 1100 V ID=250µA, VGS=0V 1.04 V/ oC VDS=1000V, VGS=0V 1 VDS= 800V , TJ=125° C


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PDF AOK5N100 AOK5N100 AOK5N100L O-247
Not Available

Abstract: No abstract text available
Text: high speed, high voltage N-channel switch-mode power MOSFET . This 'FREDFET' version has a drain-source , in·lbf 1.1 N·m Mounting Torque ( TO- 247 Package), 6-32 or M3 screw Microsemi Website - http , 0V, VDS = 0V to 800V 38 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 800V , , TJ = 25°C, VGS = 0V Reverse Recovery Time Qrr Typ D MOSFET symbol showing the


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PDF APT7F120B APT7F120S 190ns
2SK3529-01

Abstract: No abstract text available
Text: 2SK3529-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown , =8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch <150°C = *3 IF< -ID, -di/dt= 50A /µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 800V *5 VGS=-30V = = = = Electrical characteristics (Tc =25°C unless , = 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS= 800V VGS=0V Tch=125°C VDS=640V VGS=0V VGS=±30V VDS


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PDF 2SK3529-01 O-220AB 2SK3529-01
2009 - APT7F120B

Abstract: APT7F120S MIC4452
Text: Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET . This 'FREDFET' version , 0.11 °C/W °C MicrosemiWebsite-http://www.microsemi.com oz Mounting Torque ( TO- 247 , , Energy Related Max Unit S pF VGS = 0V, VDS = 0V to 800V Qg Total Gate Charge , Switching Current Rise Time VDD = 800V , ID = 3A tr td(off) tf VGS = 0 to 10V, ID = 3A, VDS = , G ISD = 3A, TJ = 25°C, VGS = 0V Diode Forward Voltage Reverse Recovery Time D MOSFET


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PDF APT7F120B APT7F120S 190ns APT7F120B APT7F120S MIC4452
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