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LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver

N-Channel Depletion-Mode MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
N-Channel

Abstract: N-Channel Depletion-Mode MOSFET
Text: TSM126 N-Channel Depletion-Mode MOSFET SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max , TSM126 N-Channel Depletion-Mode MOSFET Electrical Specifications (Tj = 25oC unless otherwise noted , ‰¤2% 2/7 Version: A14 TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics Curves , Temperature 3/7 Version: A14 TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics , TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics Curves (Ta = 25oC, unless otherwise


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PDF TSM126 OT-23 TSM126CX N-Channel N-Channel Depletion-Mode MOSFET
1996 - N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering n mosfet depletion depletion p mosfet
Text: Figure 4. Output Characteristics N-Channel Depletion-Mode MOSFET Siliconix 21-Jun-94 AN901 ID , operation results in a unique series of output characteristics where, for the n-channel depletion-mode , Characteristics of a Depletion-Mode MOSFET (ND2020L) Extending Power Level Using MOSPOWER The n-channel , depletion-mode MOSFET can be used in conjunction with an enhancement-mode power device to give an appreciable , 0.5 V VGS = 0 V IDSS VGS = ­0.5 V The transfer characteristic of the n-channel , depletionmode


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PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering n mosfet depletion depletion p mosfet
IXTA02N100D2

Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET MOSFET "CURRENT source" IXTU02N100D2 IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Text: N-Channel Depletion-mode MOSFET has negative channel cutoff voltage, which is designated as VGS(off). A , . Figure 5: An N-Channel Depletion-mode MOSFET with a voltage reference to provide a precise current , Depletion-mode MOSFET (Q1) as a current source [1] Figure 5 shows a current source example with a voltage , require N-channel Depletion-mode power MOSFET that operates as a normally "on" switch when the , applications. Figure 1: An N-channel Depletion-mode power MOSFET A circuit symbol for N-channel


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PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET MOSFET "CURRENT source" IXTU02N100D2 IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
P-Channel Depletion Mosfets

Abstract: mosfet low idss mosfet depletion P-Channel Depletion-Mode Depletion MOSFET depletion mode fet depletion mode mosfet N-Channel Depletion-Mode MOSFET n-channel mosfet triggering N CHANNEL DEPLETION MOSFET
Text: 0.02 1.0 0.10 2.5 0.30 The n-channel , depletion-mode MOSFET can be used in conjunction , characteristic of the n-channel , depletionmode MOSFET (Figure 1b). Because the gate is isolated (see Figure 3b , Depletion-Mode MOSFET Siliconix 10-Mar-97 AN901 ID Applications For Depletion-Mode MOSFETs As a , of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate


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PDF AN901 ND2012 ND2406 2N692) 10-Mar-97 P-Channel Depletion Mosfets mosfet low idss mosfet depletion P-Channel Depletion-Mode Depletion MOSFET depletion mode fet depletion mode mosfet N-Channel Depletion-Mode MOSFET n-channel mosfet triggering N CHANNEL DEPLETION MOSFET
1995 - N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation depletion-mode depletion mode current limiter n channel depletion MOSFET mosfet vs SCR depletion mode mosfet mosfet modern applications voltage regulator mosfet 1,2 AN901
Text: a unique series of output characteristics where, for the nchannel depletionmode MOSFET , we see , NChannel DepletionMode MOSFET (06/21/94) AN901 Siliconix Applications For DepletionMode MOSFETs , , depletionmode MOSFET can be used in conjunction with an enhancementmode power device to give an appreciable , Bonkowski Introduction MOSFET may also perform in the enhancementmode. The nchannel enhancementmode MOSFET (Figure 1c), requires a positivepolarity gate voltage referenced to the source to provide


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PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter n channel depletion MOSFET mosfet vs SCR depletion mode mosfet mosfet modern applications voltage regulator mosfet 1,2 AN901
N-Channel Depletion-Mode MOSFET high voltage

Abstract: N-Channel Depletion-Mode MOSFET DN2470K4 depletion mode fet depletion-mode DN2470K4-G DN2470 SMPS MOSFET mosfet depletion Depletion MOSFET
Text: high-voltage N-channel depletion-mode MOSFET . It can be used for normally closed solid state relays, SMPS , high input impedance and positive temperature coefficient inherent in MOSFET devices. Characteristic


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PDF DN2470 DN2470K4 DN2470 N-Channel Depletion-Mode MOSFET high voltage N-Channel Depletion-Mode MOSFET DN2470K4 depletion mode fet depletion-mode DN2470K4-G SMPS MOSFET mosfet depletion Depletion MOSFET
N-Channel Depletion-Mode MOSFET high voltage

Abstract: N-Channel Depletion-Mode MOSFET depletion-mode
Text: Product Overview: DN2470 is a high-voltage N-channel depletion-mode MOSFET . It can be used for normally , high input impedance and positive temperature coefficient inherent in MOSFET devices. Characteristic of


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PDF DN2470 DN2470K4 DN2470K4 O-252 N-Channel Depletion-Mode MOSFET high voltage N-Channel Depletion-Mode MOSFET depletion-mode
N-Channel Depletion-Mode MOSFET

Abstract: N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET DN2470 depletion mode fet TO-252 N-channel power MOSFET n channel depletion MOSFET n mosfet depletion depletion mode current limiter DN2470K4-G
Text: ) Product Overview: DN2470 is a high-voltage N-channel depletion-mode MOSFET . It can be used for normally , with the high input impedance and positive temperature coefficient inherent in MOSFET devices


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PDF DN2470 DN2470K4 DN2470 O-252 N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET depletion mode fet TO-252 N-channel power MOSFET n channel depletion MOSFET n mosfet depletion depletion mode current limiter DN2470K4-G
vn05

Abstract: high voltage constant current source N-Channel Depletion-Mode MOSFET high voltage
Text: a 500V ESD protected Nchannel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET . Both transistors are available in the TO-92 package. The LND1 is configured as a


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PDF 150mA, 1/150mA) W/150mA) vn05 high voltage constant current source N-Channel Depletion-Mode MOSFET high voltage
2012 - LND01K1-G

Abstract: No abstract text available
Text: Supertex inc. Lateral N-Channel Depletion-Mode MOSFET Features General Description LND01 Bi-directional Low on-resistance Low input capacitance Fast switching speeds High input impedance and high gain Low power drive requirement Ease of paralleling Applications The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


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PDF LND01 LND01 DSFP-LND01 A042712 LND01K1-G
2001 - constant current source

Abstract: N-Channel Depletion-Mode MOSFET linear databook 222 S capacitor charging and discharging time at the capacitor high voltage constant current source VN0550N3 VN05 LND150N3 N-Channel Depletion-Mode MOSFET high voltage
Text: a 500V ESD protected Nchannel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET . Both transistors are available in the TO-92 package. The LND1 is configured as a


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PDF 150mA, 1/150mA) W/150mA) constant current source N-Channel Depletion-Mode MOSFET linear databook 222 S capacitor charging and discharging time at the capacitor high voltage constant current source VN0550N3 VN05 LND150N3 N-Channel Depletion-Mode MOSFET high voltage
2012 - Not Available

Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination


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PDF LND01 LND01 DSFP-LND01 NR073012
2009 - N-Channel Depletion-Mode MOSFET

Abstract: AN-D12 high voltage constant current source capacitor c LND150N3 N-Channel Depletion-Mode MOSFET high voltage piezo amplifier driver -audio VN0550N3 ramp generator charging and discharging capacitor
Text: , and a capacitor C. R1 is a trimpot resistor. The LND150N3 is a 500V ESD protected N-channel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET . Both transistors are


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PDF AN-D12 N-Channel Depletion-Mode MOSFET AN-D12 high voltage constant current source capacitor c LND150N3 N-Channel Depletion-Mode MOSFET high voltage piezo amplifier driver -audio VN0550N3 ramp generator charging and discharging capacitor
1998 - LND150N3

Abstract: VN05 VN0550N3 high voltage constant current source N-Channel Depletion-Mode MOSFET ramp generator
Text: LND150N3 is a 500V ESD protected Nchannel depletion-mode MOSFET and the VN0550N3 is a 500V Nchannel enhancement-mode MOSFET . Both transistors are available in the TO-92 package. R1 = -1.6V 100µA ( /3.0mA


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PDF 150mA, 1/150mA) W/150mA) LND150N3 VN05 VN0550N3 high voltage constant current source N-Channel Depletion-Mode MOSFET ramp generator
1996 - MOSFET IGSS 100nA VDS 20V

Abstract: depletion n-channel mosfet to-92 N-Channel Depletion-Mode MOSFET N CHANNEL DEPLETION MOSFET TO-243AA N-Channel Depletion-Mode MOSFET high voltage depletion 400V power mosfet LND150N3 LND150N8 LND150ND
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units. Features Advanced DMOS Technology ESD gate protection The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex's lateral DMOS technology. The


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PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V depletion n-channel mosfet to-92 N-Channel Depletion-Mode MOSFET N CHANNEL DEPLETION MOSFET TO-243AA N-Channel Depletion-Mode MOSFET high voltage depletion 400V power mosfet LND150N3 LND150N8 LND150ND
2001 - N-Channel Depletion-Mode MOSFET

Abstract: MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
Text: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS(ON) (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE 500V 1.0K 1.0mA LND250K1 where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ESD gate protection The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex's lateral


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PDF LND250 OT-23: O-236AB* LND250K1 OT-23. N-Channel Depletion-Mode MOSFET MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
2013 - Not Available

Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination


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PDF LND01 LND01 DSFP-LND01 A073012
1996 - depletion mode ramp generator

Abstract: N-Channel Depletion-Mode MOSFET high voltage constant current source N-Channel Depletion-Mode MOSFET high voltage n channel depletion MOSFET depletion mode fet capacitor value calculation charging and discharging capacitor discharge and charging capacitor LND150N3
Text: N-channel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET . Both


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PDF 150mA, 1/150mA) W/150mA) depletion mode ramp generator N-Channel Depletion-Mode MOSFET high voltage constant current source N-Channel Depletion-Mode MOSFET high voltage n channel depletion MOSFET depletion mode fet capacitor value calculation charging and discharging capacitor discharge and charging capacitor LND150N3
2001 - ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND LN1E * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Where = 2-week alpha date code Features Advanced DMOS Technology ESD gate protection The LND1 is a high voltage N-channel depletion mode (normallyon


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PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
2001 - transistor marking code 12W 12

Abstract: LN1E mosfet marking 12W MOSFET IGSS 100nA VDS 20V depletion n-channel mosfet to-92 LND150 iGSS 100nA Vgs 0v LND150ND LND150N8 LND150N3
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Features Advanced DMOS Technology ESD gate protection The LND1 is a high voltage N-channel depletion mode (normallyon


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PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA transistor marking code 12W 12 LN1E mosfet marking 12W MOSFET IGSS 100nA VDS 20V depletion n-channel mosfet to-92 LND150 iGSS 100nA Vgs 0v LND150ND LND150N8 LND150N3
2005 - Not Available

Abstract: No abstract text available
Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (O) 12 20 VGS(off) (V) - 1.5 to - 4 - 0.5 to - 2.5 ID (A) 0.16 0.132 Features D D D D D High Breakdown Voltage: 220 V Normally "On" Low rDS Switch: 9 O Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer


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PDF ND2012L/2020L ND2012L ND2020L O-226AA 08-Apr-05
d150n

Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ BVdgx 500V R d S(ON) I dss Order Number / Package TO-92 LN D 150N 3 (max) 1.0KQ (min) 1.0m A TO-243AA* LN D 150N 8 Die LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units. Features ESD gate protection Free from se co n d a ry breakdow n Low po w e r drive req uire m en t Ease o f paralleling E xcelle nt th e rm a l stab ility


OCR Scan
PDF LND150 O-243AA* OT-89. d150n
2014 - Not Available

Abstract: No abstract text available
Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination


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PDF LND01 LND01 DSFP-LND01 B031414
1999 - P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Text: depletion-mode MOSFET in a fashion not unlike that of the depletion-mode JFET when a voltage of the correct , The metal-oxide-semiconductor FET ( MOSFET ) depends on the fact that it is not actually necessary to , . On a MOSFET , the metallic or polysilicon gate is isolated from the channel by a thin layer of , channel current. A MOSFET , by virtue of its electrically-insulated gate, can be fabricated to perform as either a depletionmode or enhancement-mode FET. Quite unlike the JFET, a depletion-mode MOSFET will also


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1995 - P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
Text: as an nchannel depletionmode MOSFET in a fashion not unlike that of the depletionmode JFET when a , MOSFETs The metaloxidesemiconductor FET ( MOSFET ) depends on the fact that it is not actually necessary , channel current. On a MOSFET , the metallic or polysilicon gate is isolated from the channel by a thin , off the flow of channel current. A MOSFET , by virtue of its electricallyinsulated gate, can be , depletionmode MOSFET will also perform as an enhancementmode FET. ID ID G S D Metal N


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
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