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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

Mosfet FTR 03-E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Transistors Small switching (60V, 5A) 2SK2503 •F e a tu re s ©External dimensions (Units , use in parallel. •S tru c tu re 0 .5 ± 0 .1 MOSFET transistor /If tfll (1) (2) (3 , characteristic curves 10 V o s = 1 0 V E = = P u ls e d / / - < o L 2 1 £ 0.5 U J C , = = = ZZ z z z: — = / = = : E E | r j 3 ir = = — = = = = Ë — = = = = = 6 G ATE-SO URC E VO LTAG E : Vos (V ) Fig


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PDF 2SK2503 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.
Mosfet FTR 03-E

Abstract: No abstract text available
Text: Transistors Switching (500V, 10A) 2SK2714 • F e a tu re s ►External dim ensions (Units , ide SOA (safe operating area). 4) G a te -so u rce vo lta g e g u ara ntee d at V gss = ± 3 0 V . , Silicon N-channel (1) G ate (2) Drain (3) Source MOSFET transistor •A b s o lu te m axim um , ^^ QDIbflDM b75 ■_ noHm 19 3 2SK2714 Transistors • E le c tric a l , IO Rise time > o I Yfs I* — > 0.7 5 3 P w S 3 0 0 )i s, Duty c y d e â l


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PDF 2SK2714 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c Mosfet FTR 03-E
Mosfet FTR 03-E

Abstract: No abstract text available
Text: Transistors Small switching (1OOV, 5A) 2SK2504 • F e a tu re s •E x te rn a l dim , N-channel MOSFET transistor iftl (1) (2) (3) ROHM : CPT3 ËIAJ : SC-63 1.Q±Q.2 (1) Gate (2 , ) 2SK2504 Taping TL 2500 0 O G lb ?^ RDHffl G23 127 2SK2504 Transistors • E le c , time Fall time * Pwâ300 ßS, Duty cydeâl % • E le c tric a l characteristic curves , Transistors 2SK2504 • E le c tric a l characteristic curves 0j01 Q02 005 0.1 0.2 DRAIN C UR RENT


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PDF 2SK2504 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c Mosfet FTR 03-E
2SJ374

Abstract: diode EGP 10 F20F6P 60v 10a p type mosfet diode EGP
Text: 60Vv'J-X yt-7- MOSFET 60V SERIES POWER MOSFET isi M-M\|->ÎIS1 OUTLINE DIMENSIONS mmmmm 60v-20A C;iS' ■: FTO -220 Date code nu_tji_ EIA J No. cd : Gate (2) : Drain (3) - Source 1 / r ® ~ J3 "48 74 4.5 2 7±0-2 2.7±o.2 2.54| 2.54 ® ftr fiS Ratings ■I' . ■Unii i^kmEjg. Storage Temperature Tstg — 55—150 C Channel Temperature Teh liffljlfc ¡HBB1I15Í5 11 °c K V 4


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PDF 60v-20A HBB1I15Ã DDDP23B 2SJ374 diode EGP 10 F20F6P 60v 10a p type mosfet diode EGP
Mosfet FTR 03-E

Abstract: No abstract text available
Text: PLCC-20 & LCC-20 (Top View) Q & L Package 16 S o ft-R e f Nl 2 15 F a u lt INV 3 , o UC1861-1868 UC2861-2868 UC3861-3868 U N IT R D D E Resonant-Mode Power Supply , components' initial tolerances. 15 3V—C S o f t - R e f 16 F a u lt and L o g ic P re c is io n R e fe re n c e B ia s a nd 5 V Gen Nl 1 5V S lg Gnd INV UVLO E /A Out 13 V c c 4 Range R m ln VCO Cvco 8 Z ero 10 S te e rin g FET Shot L


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PDF UC1861-1868 UC2861-2868 UC3861-3868 UC1861-1868 UC1866 Mosfet FTR 03-E
Not Available

Abstract: No abstract text available
Text: Transistors Switching (450V, 7A) 2SK2299N • F e a tu re s •E x te rn a l dim ensions , 4) G ate-source vo lta g e guaranteed at V gss= ± 3 0 V . 5) Easily designed drive circuits. 6) Easy to use in parallel. • S tru c tu re Silicon N-channel MOSFET transistor • A b s o lu te , characteristic curves DRAIN-SO URC E VO LTAG E : Vos (V ) Fig.1 Maximum Safe Operating Area Fig .2 , Transfer Characteristics Transistors 2SK2299N • E le c tric a l characteristic curves Ta=- 2 5


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PDF 2SK2299N 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c
Not Available

Abstract: No abstract text available
Text: Transistors Small switching (500V, 2A) 2SK2715 •F e a tu re s •E x te rn a l dimensions , GDlbfiQfi S10 nH om 143 MOS FET •S tru ctu re Silicon N-channel MOSFET transistor , Voltage 7 Ö E Ö C 1C □DlhßlG 'W'i JC 1 n a H m Fig. 12 Switching Characteristics (See Figure , – 8i 1± 0 .8 ± 0.1 10 . 9 5 0 . 9 5 J3—@ —0_,_P d o= n a. llo*±8-k e , circuit board than the TO-92. Reliability is the same as the TO92. FTR SIL type with a height of 3.4


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PDF 2SK2715 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c
Not Available

Abstract: No abstract text available
Text: Transistors Switching (500V, 5A) 2SK2793 •F e a tu re s •E x te rn a l dim ensions , >.&t±0.5 MOSFET transistor ROHM : TO-220FN a 7 ° -0 .0 5 2 .6 ± 0 .5 (1) Gate (2) Drain (3 , 2SK2793 • E le c tric a l characteristics (Ta = 25°C) Parameter Gate leakage current Drain-source , /d t= 1 0 0 A / s Rise time Turn-off delay time Fall time • E le c tric a l characteristic curves D R A IN -SO U R C E V O LT A G E : V ds (V) Fig.1 Maximum Safe Operating Area Fig


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PDF 2SK2793 O-220FN 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c
Not Available

Abstract: No abstract text available
Text: Transistors Switching (450V, 5A) 2SK2713 • F e a tu re s •E x te rn a l dim ensions , 4) G a te -so u rce vo lta g e gu a ra n te e d at V 5) gss = +30V. Easily designed drive circuits. 6) Easy to use in parallel. • S tru c tu re Silicon N-channel MOSFET transistor • A , 0 A /^s Rise time Turn-off delay time • E le c tric a l characteristic curves 50r 2 , 2SK2713 Transistors • E le c tric a l characteristic curves Ta=25*C di/dt=100A/>iS Vgs=0V Pulsed


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PDF 2SK2713 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.
Not Available

Abstract: No abstract text available
Text: as the TO92. FTR SIL type with a height of 3.4 mm and a lead pitch of 2.54 mm. E X P L A N A T , Transistors Switching (300V, 16A) 2SK2739 • F e a tu re s •E x te rn a l dim ensions , ) Source MOS MOSFET transistor FET Silicon N-channei • A b s o lu te m axim um ratings (Ta , Transistors 2SK2739 • E le c tric a l characteristics (Ta = 2 5 t ) Symbol Min. Typ. Max , y /s, D u ty cy cle £1?i • E le c tric a l characteristic curves 2 5 10 20 50


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PDF 2SK2739 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c
mosfet ftr 03

Abstract: IRF540 application RF Transistor 2n2222 RC5010M RC5010 IRF9Z30 IRF540 2N2222 1N5817 Notebook schematic
Text: ■o 0) N E o 10 15 20 +Vs (V) Applications Discussion LCD Driver Application Many hand-held , input voltage. This application can be used also in a PDA hand held device. IRF9Z30 MOSFET P VßAT I 10|iF V ftr 1Meg 1 Meg -o^ o— SW SPST Lx = 1mH Cx= 120pF F0 = 20kHz RC5010 LX CX , 4.80 5.00 2 E .150 .158 3.81 4.01 2 e .050 BSC 1.27 BSC H .228 .244 5.79 6.20 h .010 .020 0.25 , : 1. Dimensioning and tolerancing per ANSI Y14.5M-1982. 2. "D" and " E " do not include mold flash


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PDF RC5010 RC5010 DS3000501 mosfet ftr 03 IRF540 application RF Transistor 2n2222 RC5010M IRF9Z30 IRF540 2N2222 1N5817 Notebook schematic
1999 - Unitrode DN-95

Abstract: 100uF 16V tantalum capacitor TAJD107M016 1206 smd led mosfet short circuit protection schematic diagram capacitor 3528 DN-95 P150FCT-ND smd 01 hot smd resistor P100KFCT-ND
Text: indicator On-board N-channel MOSFET with 0.011 RDS(on) VIN SW1 and SW2 can be used to mimic the , card that is being hot swapped. OPERATION Fault Timer During normal operation the external MOSFET , long as the output current is above IFAULT. If the voltage across CT reaches 1.5V the external MOSFET , UCC3919 will be put into a low current standby mode and the external MOSFET will be turned off. SW5 , external MOSFET to be turned off and remain off until SW5 is set to the RESET position or the power is


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PDF DN-95 UCC3919 Unitrode DN-95 100uF 16V tantalum capacitor TAJD107M016 1206 smd led mosfet short circuit protection schematic diagram capacitor 3528 DN-95 P150FCT-ND smd 01 hot smd resistor P100KFCT-ND
Not Available

Abstract: No abstract text available
Text: undervoltage lockout, even in the absence of VDD power to the device. This haM M tevent MOSFET tum-on due to capacitive current through t h e j^ M ^ E n B t e c itance of the power MOSFET in the presence of h la k r iy , Driver Application U N fTR O D E C O R P O R A T IO N 7 C O N T IN E N T A L B LV D . · M E R R IM A C K , buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The , O U T 2 111 12 13 14 15 16 17 18 GND G t GND OUT2 VDD2 IN2 U j E 8 H jH il] jo


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PDF UCC1776 UCC2776 UCC3776 UCC3776 UC3879
equivalent do transistor fb 3306

Abstract: fa 1711a Mosfet FTR 03-E
Text: • Low Startup and Operating Current C E t R rjTi Representative Block Diagram jU K f 14 , * u 1t 44 Out DUf Vcc = 15 V Ft-r = 4.0 kto 16 k —Ta =25° Ë 40 —C|_= 15 pF 1 4 2 , k 500 k 1.0 M f0SC, OSCILLATOR FREQUENCY (Hz) b 3 b ? E S 3 □ m 7 1 0 c Û4Ü l 3-308 , applications where efficient bootstrap startup techniques are required (Figure 28). T h e -L suffix version , sensing power MOSFET applications. Drive Output 2 Enable Pin This input is used to enable Drive Output 2


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PDF MC34065-H, MC33065-H, MC34065-H Z7157. equivalent do transistor fb 3306 fa 1711a Mosfet FTR 03-E
mosfet ftr 03

Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Text: Transistors Switching (200V, 5A) 2SK2459N •Features 1 ) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •Structure Silicon N-channel MOSFET transistor , Operating Area 10 8 < 7 6 Lü E Ta=25TC Pulsed -4.5V- , taping version of the highly popular FTR . This enables automatic high-density mounting with a radial


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PDF 2SK2459N O-22QFN O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN mosfet ftr 03 FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
mosfet ftr 03

Abstract: No abstract text available
Text: u t v o lta g e d ro p s , th e d u ty c y c le increases until the P-channel MOSFET is held on con , _ G e n e r a l D e s c r i p t i o n The MAX1692 is a low-noise, pulse-w idth-m odulated (PWM , rectifier for high efficiency; it requires no external Schottky diode. E xcellent noise c h a ra c te ris tic s and fix e d -fre q u e n c y operation provide easy post-filtering. The MAX1692 is ideally , the input ra n g e of + 2 .7 V to + 5 .5 V . O th e r fe a tu r e s o f th e MAX1692 include high


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PDF MAX1692 mosfet ftr 03
2SK2460N

Abstract: mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
Text: Transistors Switching (250V, 5A) 2SK2460N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •Structure Silicon N-channel MOSFET transistor •External dimensions (Units: mm) ÒÒ +1 , +0.3 1 -0.1 a -+0.2 LS— ,2.54±0.5 „,+0.1 0 75 -0.05. , Lli Q.fiSMax.j The FTL is a radial taping version of the highly popular FTR . This enables automatic


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PDF 2SK2460N T0-22Ã O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN 2SK2460N mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
Not Available

Abstract: No abstract text available
Text: amplifier output are connected to the PWM comparator. T h e maxim um duty cycle for V d tc (voltage applied , terminal is used to provide soft start. In Figure 6, the DTC terminal is connected to the V r e f terminal , Ftr terminal is connected to it’s Vref terminal to disable the slave’s oscillator. In this case , . Stand-by Mode and Under-Voltage Lockout (UVLO) Generally, Vgs > 6 to 8 V is required to use power MOSFET , PF = k£2 I 3 7 4 c17Sb D O S S E S BTE OUT 9 MB3769A ■SHORT PROTECTION CIRCUIT


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PDF MB3769A MB3769A 374175b c17Sb DIP-16P-M04) D16033S-2C-3
mosfet ftr 03

Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Text: Transistors Switching (250V, 16A) 2SK2711 •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •Structure Silicon N-channel MOSFET transistor •External dimensions (Units: mm) 10.0+83 do + l 101 JLfi. £54+0.5 0 75 — 0j5 ROHM : TO-220FN (1)(z)(3 , taping version of the highly popular FTR . This enables automatic high-density mounting with a radial


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PDF 2SK2711 O-220FN O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN mosfet ftr 03 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
yto oscillator

Abstract: MC34129D
Text: ideally suited for driving a power MOSFET . Also included are protective features consisting of soft-start , Ramp Input [ j T Sync/inhibit r r In p u t '- ftr /C T n r vref 2 . 5 V [ T Gnd [ T (Top View) 13 , Tstg -6 5 to +150 °C ELECTRICAL C H A R A C T E R IS T IC S (V c c = 10 V, iA - 25°C [Note 1 , MC34129, MC33129 ELECTRICAL C H A R A C T E R IS T IC S (V < x = 10 V, Ta = 25°C [Note 1], unless , 'o s e 'dischg l|H l|L ^in 80 240 - - 100 350 40 15 32 120 460 125 35 50 kHz ha


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PDF MC34129 MC33129 MC34129, yto oscillator MC34129D
Not Available

Abstract: No abstract text available
Text: 0.8 -9 0 12.0 - - - - - 1.0 - 45 - Ib Av BW VoH = 0 dB* - - VOL IS O U R C E , = 5 V, CB = 20 V, VS = 15 V OUT2 = -1 0 0 mA, VB = 5 V OUT2 = 100 mA, VB = 5 V I d io d e CB , V V V V V |oA V VoL2 -2.0 0 - 0.88 VD 1.08 VD 3 - - 1.1 1.0 V d io d e = 1 0 , Vcc; = 5 V VB = 5 V, Ft-r = 13C k£2 - 4 0 .0 -2 0 .0 0 .0 2 0 .0 4 0 .0 6 0 .0 8 0 , Comp.1 is set to a maximum duty cycle of approximately 90%. (5) Output circuits (D riv e l, Drive2) The


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PDF DS04-27219-1E MB3871 MB3871 F9806
Not Available

Abstract: No abstract text available
Text: 1.0 - 45 - % nA dB kHz V V |oA mA Ib Av BW VoH VOL IS O U R C E IsiN K (Continued) 8 , OUT2 = -1 0 0 mA, VB = 5 V OUT2 = 100 mA, VB = 5 V I d io d e CB -2.5 CB - 1.5 - V 8 - VS + 1.1 VS + 1.4 V VoH VOL V d io d e 11 11 13 24 24 19 21 VB -2.5 , setting) vs. Temperature characteristics Vcc; = 5 V VB = 5 V, Ft-r = 13C k£2 -4 0 .0 -2 0 .0 0.0 , maximum duty cycle of approximately 90%. (5) Output circuits (D riv e l, Drive2) The output circuits on


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PDF S04-27218-2E MB3870 MB3870 F9806
2003 - tp 4056 datasheet

Abstract: 4202 BD TRANSISTOR tp 4056 Li-ion Battery Charger 4056 tp 4056 battery LTC4056-4 4056 charger 4056 16 PIN DIAGRAM M2A MARKING SOT-23 4205 BD TRANSISTOR
Text: being charged, the CHRG pin is pulled low by an internal N-channel MOSFET . When the timer has timed , ground by an internal N-channel MOSFET capable of driving an LED. When the charge cycle ends, the strong , output pin (OUT) high and measure the voltage at the CHRG pin. The internal N-channel MOSFET will pull , VCESAT, High Beta, Small BCP69 or FZT549 0.75 FTR 2SB822 Low VCESAT 1 ATV 2SB1443 , used. In other cases, where the voltage drop must be kept low, a P-channel MOSFET can be used (as


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PDF LTC4056-4 200mA 700mA 75mm2 700mA) LTC4057 800mA OT-23 LTC4058 950mA tp 4056 datasheet 4202 BD TRANSISTOR tp 4056 Li-ion Battery Charger 4056 tp 4056 battery 4056 charger 4056 16 PIN DIAGRAM M2A MARKING SOT-23 4205 BD TRANSISTOR
2003 - sso8 package

Abstract: MOSFET P SOT-23 BUZ350 SOT323 MOSFET P BS0615NV tda 2850 BUZ345 buz341 BSS138N n-channel 250V power mosfet smd
Text: L o w Vo l t a g e I C s ­ D i s c r e t e s : O p t i M O S ® , O p t i M O S ® 2 Pow e r Ma n a g e m e n t & Su p p l y : D C / D C Se l e c t i o n Gu i d e w w w. i n f i n e o n . c o m / p o w e r Never stop thinking. Introduction DC/DC CONVERSION plays a critical role in , constantly shrinking in size, increasing the power density. WE CAN HELP you out. Our OptiMOS®2 power MOSFET , . 2 Contents ICs In t e g r a t e d Sw i t c h 4 G a t e Dr i v e r 4 Di s c re t


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PDF B152-H8203-X-X-7600 sso8 package MOSFET P SOT-23 BUZ350 SOT323 MOSFET P BS0615NV tda 2850 BUZ345 buz341 BSS138N n-channel 250V power mosfet smd
LTC1161

Abstract: LS105
Text: batteries for backup. This device drives two sets of back-to-back N-channel MOSFET switches to route powerto , the logic-level N-channel MOSFET switches while an internal undervoltage lock-out circuit keeps the , or during a fault condition. A user-programmable timer monitors the time the MOSFET switches are in , tra d e m a rks of Line ar Te chno lo g y C orporation. nppucnnons 3.3V/5V Power Management 3 , infringe on existing patent rights. 1 LTC1473L a b s o lu t e (Note 1) mnximum RRTinGs p r c


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PDF 16-Pin LTC1473L 1473L 1473N LTC1161 LS105
Supplyframe Tracking Pixel