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LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRM Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927CTS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C
LTC2927CTS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C

Mj2955 power transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling , Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Collector­Base Voltage Emitter­Base Voltage 100 7 Collector Current - Continuous Base Current 15 7 Total Power , Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications , the power handling ability of a transistor : average junction temperature and second breakdown. Safe , €¢ Collector−Emitter Saturation Voltage − • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS , Current − Continuous Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C Derate


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , ) IB, Base Current (mA) Page 3 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors , .0 2N3055, MJ2955 Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA ­


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: 50 µs dc 1 ms There are two limitations on the power handling ability of a transistor : average , ON Semiconductort NPN Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , There are two limitations on the power handling ability of a transistor : average junction temperature , POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W Vdc MARKING DIAGRAM TO-204AA (TO , 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 Watts W/°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor , Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 200 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors . . . , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor , Continuous Base Current 15 7 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 200 15 A POWER TRANSISTORS , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A =


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
1997 - MJ2955 TRANSISTOR

Abstract: mj2955 TO-3 Transistor MJ2955 MJ2955 Mj2955 power transistor
Text: MJ2955 SILICON PNP SWITCHING TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. 1 2 TO , Temperature September 1997 150 W -65 to 200 o C 200 o C 1/4 MJ2955 THERMAL , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 20 5 4 70 MHz MJ2955 TO


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PDF MJ2955 MJ2955 MJ2955 TRANSISTOR mj2955 TO-3 Transistor MJ2955 Mj2955 power transistor
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , two limitations on the power handling ability of a transistor : average junction temperature and , Saturation Voltage - · · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE , Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , There are two limitations on the power handling ability of a transistor : average junction temperature , Voltage VEB 7 Vdc IC 15 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W Adc Collector Current - Continuous Base Current IB 7 Adc Total Power Dissipation @ TC , or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 THERMAL


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits , MJ2955 . 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
1998 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955 . 1 2 TO-3 INTERNAL , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , 120 - fhfe 10 - kHz 2N3055, MJ2955 There are two limitations on the power , Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · · · , Current Total Power Dissipation @ T q = 25°C Derate above 25 °C O perating and Storage Junction


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Text: power handling ability of a transistor : average junction tem perature and second break down. Safe , ) Figure 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , , COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Value 60 70 100 7 15 7 115 0 , 175 200 TC. CASETEMPERATURE (X ) Figure 1. Power Derating P referred devices are Motorola


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PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
1999 - 2N3055

Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits , MJ2955 . 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter , MJ2955 100 V Collector-Emitter Voltage (R BE 100) Collector-Emitter Voltage (I B = 0) 70 V , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA


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PDF 2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
2N3055G

Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G TO-204AA transistor OF transistor 2n3055 to-3 package MJ-20 power transistor mex MJ2955 data transistor 2n3055 2N3055
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , power handling ability of a transistor : average junction temperature and second breakdown. Safe , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max , Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ, Tstg -


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PDF 2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G TO-204AA transistor OF transistor 2n3055 to-3 package MJ-20 power transistor mex data transistor 2n3055
1995 - Not Available

Abstract: No abstract text available
Text: € Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 Preferred devices are , . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , 50 µs There are two limitations on the power handling ability of a transistor : average junction


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PDF 2N3055/D* 2N3055/D
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction , NPN MJ2955 PNP TO-3 Metal Can Package TO-3 Metal Can Package A B K E C DIM F , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
1995 - MJ2955 TRANSISTOR

Abstract: Mj2955 power transistor mj2955 TO-3 MJ2955 P003N
Text: MJ2955 SILICON PNPSWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for power , Junction Temperature October 1995 W -65 to 200 o C 200 o C 1/4 MJ2955 THERMAL , 4 fT Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 70 MHz MJ2955 TO , R P003N 3/4 MJ2955 Information furnished is believed to be accurate and reliable. However


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PDF MJ2955 MJ2955 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 TO-3 P003N
pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching , Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction , NPN MJ2955 PNP TO-3 Metal Can Package TO-3 Metal Can Package A B K E C DIM F , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
2008 - PD115

Abstract: MJ2955 MJ2955 TRANSISTOR
Text: Description Part Number Transistor , PNP, TO-3 MJ2955 V, Voltage (Volts) Part Number Table IC , 1165912 Complementary silicon power transistors are designed for general-purpose switching and , Collector (Case) 15 Amperes Power Transistors Complementary Silicon 60 Volts, 115 Watts L 0.440 , IB 7 Total Power Dissipation at TC = 25°C Derate above 25°C PD 115 0.657 W W/°C , reliability may be affected. PD, Power Dissipation (Watts) Power Derating TC, Case Temperature (°C


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PDF 18ade PD115 MJ2955 MJ2955 TRANSISTOR
2001 - Not Available

Abstract: No abstract text available
Text: Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can , UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise , Voltage Collector Current Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC , India Limited Data Sheet Page 2 of 4 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
Not Available

Abstract: No abstract text available
Text: NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction , NPN MJ2955 PNP TO-3 Metal Can Package TO-3 Metal Can Package A B K E C DIM D , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
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