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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUHS20F60 CUHS20F60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS15S60 CUHS15S60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
CUHS20S60 CUHS20S60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS15F60 CUHS15F60 ECAD Model Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC

Microwave schottky Diode mixer Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - Mixers

Abstract: MESFET x-band waveguide isolators 10 GHz mixer diode 20 GHz schottky diode
Text: generated in any Schottky diode mixer primarily from the exponential shape of the junction voltage and , RF input gate source resistance and intermodulation similar to the Schottky diode mixer . THE E/I , different coupling modes for port separation. Figure 2 shows the double-balanced Schottky diode mixer , compression of +24 dBm. Another interesting advantage of the passive MESFET mixer relative to a Schottky diode mixer is the burn-out RF power limit. A general rule used by Schottky diode manufacturers is 75 mW


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PDF C-34B/151 Mixers MESFET x-band waveguide isolators 10 GHz mixer diode 20 GHz schottky diode
2008 - Not Available

Abstract: No abstract text available
Text: Handling Schottky Barrier Diodes Microwave and millimeter wave Schottky barrier diodes have very small , diode . Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax , Forward Voltage (V) I-V Characteristics for GaAs Schottky Diode Copyright  2008 Rev , GaAs Schottky Diodes ® TM MS8001 – MS8004 Packaged and Bondable Chips Features , Description 30 and 60 GHz Radios Microsemi’s MS8000 series of GaAs Schottky barrier diodes are


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PDF MS8001 MS8004 MS8000 Maximum015
2008 - MS8001

Abstract: m38 schottky
Text: Handling Schottky Barrier Diodes Microwave and millimeter wave Schottky barrier diodes have very small , Forward Voltage (V) I-V Characteristics for GaAs Schottky Diode Copyright 2008 Rev.: 2009-02-10 , GaAs Schottky Diodes TM ® MS8001 ­ MS8004 Packaged and Bondable Chips Features , Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky , these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band


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PDF MS8001 MS8004 MS8000 In015 MS8001 m38 schottky
2008 - k and ka band radar detector

Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Text: Handling Schottky Barrier Diodes Microwave and millimeter wave Schottky barrier diodes have very small , diode . Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax , Voltage (V) I-V Characteristics for GaAs Schottky Diode Copyright 2008 Rev.: 2009-02-17 , GaAs Schottky Diodes ® TM MS8001 ­ MS8004 Packaged and Bondable Chips Features , Microsemi's MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip


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PDF MS8001 MS8004 MS8000 k and ka band radar detector MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
DME2050-222

Abstract: No abstract text available
Text: . Schottky Diode Circuits Mixer Circuits There are many different circuits utilized for frequency , Single-Ended Mixer A single-ended mixer consists of a Schottky diode and passive components utilized as , filters in the circuit. Mixer Diode Barrier Height The barrier height of the Schottky mixer diode , the key elements in frequency mixer and RF power detector circuits. In 1938 Walter Schottky , the son , diode is the result of this work. S The Schottky Junction The Schottky diode junction is formed


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PDF APN1014: DME2050-222
1986 - diode hp 2835 schottky

Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky , ideal diode and less than 1.1 for a silicon Schottky diode . Variations in n are not important for n , the effect of the amplifier following the mixer . Diode manufacturers include the effect of a 1.5 dB , amplifier in the mixer noise definition. In this paper diode efficiency will be measured by conversion , . DC BIAS RW Figure 2 shows the conversion loss of a 5082-2817 mixer diode measured at 2 GHz


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MSPD1020E50

Abstract: sampling phase detector SPD MSPD-1020-E50 MSPD1012-E50 MSPD1020-E50 sampling mixer MSPD-1012-E50 mspd1012 ,"diode srd" MSPD1012E50
Text: Schottky diodes D2 and D3, which are turned on briefly and apply a sample of the microwave signal to the IF , improved by matching the microwave source to the Schottky diodes. Also use microwave layout rules for the , Diode , coupling capacitors and a low barrier Schottky pair. The Schottky pair is used as a sampling , act as a mixer to mix the harmonic of the SRD step closest to the microwave frequency. The output is a , composed of a comb generator, a coupling network and a single balanced mixer . It is designed to be used in


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PDF MSPD-1020 100MHz 19dBm 23dBm 21dBm MSPD1020E50 sampling phase detector SPD MSPD-1020-E50 MSPD1012-E50 MSPD1020-E50 sampling mixer MSPD-1012-E50 mspd1012 ,"diode srd" MSPD1012E50
1999 - 5082-2835 diode

Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky , International Microwave Symposium Digest, 1983, pp 130-132. SUMMARY Schottky diode mixing efficiency is , ideal diode and less than 1.1 for a silicon Schottky diode . Variations in n are not important for n , the effect of the amplifier following the mixer . Diode manufacturers include the effect of a 1.5 dB , amplifier in the mixer noise definition. In this paper diode efficiency will be measured by conversion


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2009 - SURFACE MOUNT DIODES MIL GRADE

Abstract: Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
Text: . Consequently, Schottky junctions are extremely well-suited for commutating mixer circuits in which ideal , otherwise equivalent p-n junction diode . This permits Schottky diodes to detect lower amplitude signals , with good phase noise. The subharmonic mixer , comprised of an antiparallel pair of GaAs Schottky , series resistance GaAs Schottky Flip Chip Diodes Skyworks broad product portfolio includes Schottky , plastic surface mount packaged devices for mixer or detector applications. Skyworks series of GaAs flip


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PDF BRO373-09A SURFACE MOUNT DIODES MIL GRADE Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
police radar detector

Abstract: DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
Text: - This is the RF or microwave signal which provides the RF bias to the mixer diode (s). It normally , can also be expressed in dB: L (dB) - 10 log 10 Pif/Prf When referring to a mixer diode , it is the , low conversion loss and good RF match to the mixer diode (s). Normally optimum local oscillator powers , FIGURE - The noise factor and noise figure (NF) of a mixer diode are closely related to its conversion , perfect mixer diode , NF in dB - 3.0 dB plus the IF amplifier Normally this simplifies to NF ~ 10 log Lc


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PDF A01803 police radar detector DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
Not Available

Abstract: No abstract text available
Text: erm etic packages fo r Schottky diode quads are not practical for high frequency m icrow ave m ixers , : SCHOTTKY DIODE SCREENING (PER MIL-STANDARD 750 AND THE APPROPRIATE METHOD.) Level 1 screening Plan S p , affects m ixer M T B F is the Schottky diode itself. Since this is the limiting factor, calculated M T B F , vers Diode Quad Capacitors Com ponent Failure Rate Calculations: a) Silicon Schottky D iode Quad , perimeter = 4.32 inches Component Failure Rate Calculations: a) Silicon schottky Diode Quad Formula: xp =


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Not Available

Abstract: No abstract text available
Text: packages for Schottky diode quads are not practical for high frequency microwave m ixers due to the lead , CARRIER OUTPUT BI-PHASE DATA INPUT +lc O T L - Ir FIGURE 1. Using a Microwave Mixer as a , eticity testing. This screening plan is summarized in the block diagram below: SCHOTTKY DIODE SCREENING , Schottky diode itself. Since this is the lim iting factor, calculated M TBF for a m ixer depends heavily on , perim eter = 4.32 inches Component Failure Rate Calculations: a) Silicon Schottky Diode Quad Formula: =


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PDF IL-HDBK-217 IL-HDBK-217.
backward diode

Abstract: tunnel diode General Electric "backward diode"
Text: circuit which makes use of the nonlinear properties of a mixer diode to produce a difference frequency , with a single diode or more commonly, with multiple diodes in balanced or double balanced mixer , the local oscillator frequency. Semiconductor mixer and detector diodes for microwave applications , potential barrier, such as the conventional Schottky barrier diode or the more recently introduced planar , as the tunnel or backward diode . The metal semiconductor junction of the Schottky barrier device


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PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"
gold metal detectors

Abstract: Schottky diode wafer
Text: Schottky barrier diode technology Signal conditioning is the major application field for Schottky , digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the , types. Relative to a p-n junction diode , a Schottky diode eliminates minority carriers. This , MICROWAVE offers silicon Schottky barrier diodes for three major classes of applications · · · ultrafast , few picoseconds, only a Schottky barrier diode can support It. However, the power level must be held


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2004 - back Tunnel diode

Abstract: RF Microwave schottky Diode mixer IQD160A20C
Text: , if desired, by reversing the leads of the Schottky diode inside the mixer . In practice, one can , mixer . Therefore, since the average impedance and reflection coefficient of a Schottky diode quad are , of an ordinary mixer make it suitable for phase detection? A1: Generally, a large maximum output voltage and a low residual DC diode offset voltage. The double-balanced mixer circuit is usually chosen , offer very small maximum output voltages. Schottky diode phase detectors often have excess uniform phase


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2012 - MSPD2018

Abstract: MSPD1012-E50 MSPD2018-E50 MSPD-1012-E50 MSPD1012E50 sampling phase detector SPD MSPD1000 Sampling Phase Detectors impulse generator microwave Sampling Phase Detector
Text: +25 °C Microwave Frequency Part Number Step Recovery Diode Schottky Sampling Diodes Cap FREF PREF CT , Step Recovery Diode , coupling capacitors and a low barrier Schottky pair. The Schottky pair is used as , domain, the Schottkys act as a mixer to mix the harmonic of the SRD step closest to the microwave , impulse to the schottky diodes D2 and D3, which are turned on briefly and apply a sample of the microwave , microwave source to the Schottky diodes. Also use microwave layout rules for the physical layout of the


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PDF MSPD1000, MSPD1002, MSPD1012 MSPD2018 E50SM) A17135 MSPD2018 MSPD1012-E50 MSPD2018-E50 MSPD-1012-E50 MSPD1012E50 sampling phase detector SPD MSPD1000 Sampling Phase Detectors impulse generator microwave Sampling Phase Detector
1997 - gold metal detectors

Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a , diode is similar to point contact diodes and p-n junction diodes. The Schottky diode is more rugged , SCHOTTKY BARRIER DIODE SiO2 SCHOTTKY BARRIER METAL SCHOTTKY BARRIER n-TYPE SILICON n-TYPE SILICON MESH PASSIVATED DIODE Figure 1. Three Types of Schottky Barrier Diodes. 3-2 SiO2 Types of Diode Construction There are several assembly geometries used for Schottky barrier diodes


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PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
IN5711

Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Text: figure. Another type of mixer diode is the Schottky quad used for double balanced mixers. These quads are , Schottky diode is more rugged than the point contact diode because the contact is not subject to change , applications. Types o f Diode Construction There are several assembly geometries used for Schottky barrier , Schottky diode with a p-n junction, eliminating the premature breakdown of the passivated diode without , , consider the IN5711 Schottky diode . In this case, Tjmax Pmax = 200°C = 250 mW = 0.25 W Applications


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PDF AN988, 26/Th IN5711 Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
x band varactor diode

Abstract: varactor diode capacitance measurement varactor diode high frequency SMP1307-027LF Microwave zero bias detector diodes Microwave detector diodes rf detector diode low power BRO387-10A varactor diode datasheet SMP1345-079LF
Text: . Schottky Detector Diode Detected Output RF Input RF choke Filter Capacitor Filter Resistor Single Schottky Diode Detector Schottky Diodes for Detector and Mixer Applications Product , breakdown voltage >8 V SC-79 1.6 x 1.8 x 0.6 SMS3922-079LF Detector or mixer Schottky diode , systems · Wireless microwave access (WiMAX) · Passive optical networks (PON) Attenuator PIN Diode SMP1307-027LF Schottky Diodes for Detector and Mixer Applications Detector Diodes Features


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PDF BRO387-10A x band varactor diode varactor diode capacitance measurement varactor diode high frequency SMP1307-027LF Microwave zero bias detector diodes Microwave detector diodes rf detector diode low power BRO387-10A varactor diode datasheet SMP1345-079LF
HSMS0001

Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Text: . Another type of mixer diode is the Schottky quad used for 3-4 double balanced mixers. These quads are , C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a , is similar to point contact diodes and p-n junction diodes. The Schottky diode is more rugged than , . Hewlett-Packard's patented process combines a Schottky diode with a p-n junction, eliminating the premature breakdown of the passivated diode without sacrificing the picosecond switching response of the Schottky


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PDF 26/Ig HSMS0001 Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
MPND-4005

Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Text: MTLXS00066 metelics SCHOTTKY FOR MIXER , DOUBLER OR BIASED DETECTOR ojsm oi4i ' o je io o , 12 11 20 0.06 to 0.1 0.06 to 0.1 0.06 to 0.1 0.06 to 0.1 2 3 4 5 B10B SCHOTTKY FOR MIXER , 0.07 to 0.125 0.06 to 0.125 0.06 to 0.125 0.06 to 0.125 E45SSM SCHOTTKY FOR MIXER OR DOUBLER , SCHOTTKY Metelics manufactures a broad range of Schottky diodes for RF and microwave mixers, doublers , range of PIN diodes and a NIP diode for RF and microwave switches, attenuators, limiters, phase shifters


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PDF MTLXS00066 MSS-30, MSS-40, MSS-50, MSS-60, PCR46 MPND-4005 MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Not Available

Abstract: No abstract text available
Text: 2 TO 18 AND 2 TO 26 GHz BIASABLE BRIDGE QUAD SCHOTTKY DIODE MIXERS INTRODUCTION The DBL and DBLX , frequency limits are 18 and 26 GHz, dependent upon whether a discrete or monolithic Schottky diode bridge , mechanical shocks. The internal microwave diplexer of the DBLX series mixer uses ultrasonic bonded , all diodes receive the same LO signal, this mixer will have the same LO harmonics as the single diode , OUTPUT 0- Figure 2b. Multiple Diode (Bridge Quad) Reflection Mixer 329


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2000 - diode detector x band

Abstract: s band doppler mixer noise source diode Diode Schottky Switch frequency 10 GHz 5082-2565 microwave detector diode detector diode DOPPLER circuit ED-15 noise diode
Text: Flicker Noise in Schottky Diodes Application Note 956-3 At lower frequencies, diode noise , than those of either pn junctions or point contact diodes. Schottky Diode Types There are four types , among Schottky diodes. This type 30 NOISE TEMPERATURE RATIO (dB) PASSIVATED MIXER (n-TYPE , noise region, so a diode with low flicker noise is often the optimum Doppler mixer diode . However , noise figure of the mixer diode , Lm (FIF -1 + tm), with the corresponding expression for the detector


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PDF ED-15, ED-16, 5980-3000EN diode detector x band s band doppler mixer noise source diode Diode Schottky Switch frequency 10 GHz 5082-2565 microwave detector diode detector diode DOPPLER circuit ED-15 noise diode
2010 - Diodes

Abstract: RF Diode Design Guide
Text: specific RF and microwave applications. Products include silicon varactors, PIN, Schottky and GaAs , PIN Diodes PIN Diode Chips ■PIN Diode Wafers on Film Frame ■Beam-Lead PIN Diodes Schottky , Surface Mount Technology (SMT) Schottky Diodes ■ icro Surface Mount Silicon Schottky Mixer and Detector Diodes M ■Hermetic Ceramic Schottky Diodes ■Schottky Diode Chips ■Schottky Diode , Gain Control (PIN Diodes) Downconverter Mixer ( Schottky Diodes) SKY73201/ SKY73202


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PDF eng508 BRO389-11B Diodes RF Diode Design Guide
2002 - XH8 mixer

Abstract: diode SH8 marking XH8 marking diode surface mount zero-bias detector diode SMS1546 Series Detector Diodes marking c SMS7630-005LF
Text: March 13, 2013 1 DATA SHEET · MIXER AND DETECTOR SCHOTTKY DIODES Table 1. Schottky Diode , DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications · Sensitive RF and microwave detector circuits · Sampling and mixer circuits · High-volume wireless · WiFi and mobile · , -020) Description These low-cost, surface mountable, plastic packaged silicon mixer Schottky diodes are designed , various packages and marking of the mixer and detector Schottky diodes. Skyworks Solutions, Inc. ·


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PDF J-STD-020) 00041W XH8 mixer diode SH8 marking XH8 marking diode surface mount zero-bias detector diode SMS1546 Series Detector Diodes marking c SMS7630-005LF
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