The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
CLC5903VLA Texas Instruments RF/Microwave Up/Down Converter, RF/MICROWAVE DOWN CONVERTER, PLASTIC, QFP-128

Microwave GaAs FET catalogue Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: X13769XJ2V0CD00 11-18 RF and Microwave Devices Discrete s Low Noise GaAs /HJ FET (NE) (1/2) Supply , 84A S01 CD-ROM X13769XJ2V0CD00 11-19 RF and Microwave Devices s Low Noise GaAs /HJ FET (NE , and Microwave Devices Discrete s Cross-reference Table · Low Noise GaAs /HJ FET (1/3) ASSOCIATED , CD-ROM X13769XJ2V0CD00 11-14 RF and Microwave Devices Discrete s Dual Gate MES/MOS FET · Dual , NE32900 NE34018 NE38018 NE72118 Applications General Purpose GaAs FET General Purpose GaAs FET General


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
MA4G

Abstract: GaAs FET chip dca300 MA4GM212-500 M202-2000 MA4GM202-T5
Text: " GaAs FET MMIC RF & MICROWAVE CONTROL PRODUCTS" catalog. M/A-COM also offers custom MMIC Broadband , detailed information on GaAs MMIC SPST switches request a copy of the " GaAs FET MMIC RF & MICROWAVE , , request a copy of the " GaAs FET MMIC RF & MICROWAVE CONTROL PRODUCTS" catalog. M/A-COM SEMICONDUCTOR , copy of the " GaAs FET MMIC RF and MICROWAVE CONTROL PRODUCTS" catalog. M/A-COM SEMICONDUCTOR , AJÎKOvi GaAs FET MM 1C Broadband Control Products Capability Guide Features DC TO 18 GHz


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2004 - HMC216MS8

Abstract: DOUBLE FET
Text: MICROWAVE CORPORATION HMC216MS8 v01.0801 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , 12 - 55 HMC216MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , : 978-250-3373 Order Online at www.hittite.com HMC216MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC , CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF , GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board MIXERS - SMT 12


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PDF HMC216MS8 HMC216MS8 DOUBLE FET
ely transformers

Abstract: No abstract text available
Text: range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and , contractor. GaAs PIN diode limiters and single- and dual-gate FET variable attenuators have been fabricated , LITHOGRAPHY DEFINES FET GATES Tl offers both 0 .5 - and 0 .25 -^ m gate-length GaAs FETs yielding extrem ely , ) organization was created to produce Gallium Arsenide ( GaAs ) Monolithic M icrowave Integrated Circuits (M M ICs , GaAs M M ICs and components for military radar, electronic warfare, missile guidance, and


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1996 - NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 NE24406 mw7721
Text: , communications and applied microwave systems, the GaAs FET has become an indispensable item. 1. THE FIELD , California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs , feasible gallium arsenide field effect transistor ( GaAs FET ) appeared, and the uses of this device are , . Commercialization of GaAs field effect transistors led to lower energy consumption and smaller microwave , new device, known as the Gallium Arsenide Metal Semiconductor FET ( GaAs MESFET) showed performance


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PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 NE24406 mw7721
2013 - HMC216MS8

Abstract: No abstract text available
Text: HMC216MS8 / 216MS8E v02.0705 OBSOLETE PRODUCT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , apps@hittite.com OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz MxN Spurious Outputs nLO mRF , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board , Functional Diagram General Description The HMC216MS8 & HMC216MS8E are ultra miniature double-balanced FET


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8
SPDT FETs

Abstract: DR65-0001 SWD-119 SWD-109 SW-313 MASW6010G MASW4030G AT-220 SW SPDT HUGHES SPDT
Text: An ASIC Driver for GaAs FET Control Components This application note covers driver selection and , from a TTL or CMOS input voltage to the complementary drive signals required for GaAs FET switches , -0001) channel devices. GaAs FET control components require complementary drive voltages, because most switching , pinch-off voltages, it is recommended that CMOS logic be used to drive GaAs FET control T 42 · APPLIED MICROWAVE & WIRELESS L Figure 1. A typical SPDT FET switch circuit. components so that the


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PDF SWD-109) SWD-119 DR65-0001) SPDT FETs DR65-0001 SWD-109 SW-313 MASW6010G MASW4030G AT-220 SW SPDT HUGHES SPDT
mitsubishi microwave

Abstract: MGFC1801 fet 4468 4468 fet
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , ) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER , ) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER


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PDF MGFC1801 MGFC1801 100mA mitsubishi microwave fet 4468 4468 fet
2003 - NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: , communications and applied microwave systems, the GaAs FET has become an indispensable item. 1. THE FIELD , California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs , feasible gallium arsenide field effect transistor ( GaAs FET ) appeared, and the uses of this device are , . Commercialization of GaAs field effect transistors led to lower energy consumption and smaller microwave , new device, known as the Gallium Arsenide Metal Semiconductor FET ( GaAs MESFET) showed performance


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PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
FET Spec sheet

Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , dB m MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , MITSUBISHI ELECTRIC (3/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE LOW-NOISE , : 130+20¿¿m MITSUBISHI ELECTRIC (4/6) MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC1801 FOR MICROWAVE


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PDF MGFC1801 MGFC1801 100mA FET Spec sheet mitsubishi microwave 4468 fet fet 4468
2011 - Not Available

Abstract: No abstract text available
Text: most IC FET switches. A PIN diode operates as a variable resistor at RF and microwave frequencies. Its , output arm bias current of the switch. The Current Workhorse GaAs field-effect transistor ( FET ) based , The State of RF/ microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave , today as several devices are typically contained in a block diagram. RF and microwave switches fall , switches have not found wide use in RF and microwave applications since the PIN diode was developed, they


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2006 - H216

Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 H216 gaas fet marking a marking c gaas fet 216MS8E
2008 - h216

Abstract: HMC216MS8E HMC216MS8 gaas fet marking a 216MS8E gaas fet marking C gaas fet marking
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL -


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 h216 gaas fet marking a 216MS8E gaas fet marking C gaas fet marking
2005 - HMC216MS8

Abstract: h216
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input LO , HMC216MS8E are ultra miniature double-balanced FET mixers in 8 lead plastic surface mount packages (MSOP).


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 h216
2014 - Not Available

Abstract: No abstract text available
Text:  HBH offers a new MMIC catalogue  No export restrictions, ITAR-free devices  All MMICs , HBH MMIC Catalogue Processing and measurement of MMICs as well as packaging is done under , Amplifier - GaAs Process 30.09.2014 Folie 5 © HBH Microwav e GmbH property MMIC - Power Amplifier - GaAs Process 30.09.2014 Folie 6 © HBH Microwav e GmbH property MMIC - LNA - GaAs Process 30.09.2014 Folie 7 © HBH Microwav e GmbH property MMIC - LNA - GaAs Process


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PDF 40GHz
1999 - univision technology

Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch HMC281 HMC279MS8G HMC27 HMC267QS16G HMC265CB1 HMC264CB1 HMC220MS8
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has introduced , Wave Product Showcased at Development Agreement Anaheim MTT-S Hittite Microwave Corporation (HMC) & , communication markets. The 1999 IEEE MTT-S International Microwave Symposium & Exhibition held in Anaheim


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PDF HMC258CB1 HMC264CB1 HMC265CB1 univision technology Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch HMC281 HMC279MS8G HMC27 HMC267QS16G HMC265CB1 HMC264CB1 HMC220MS8
Amplifier Research rf power amplifier schematic

Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
Text: Nitride Thermally Stable Schottky Contacts to GaAs : Characterization and Applications to SAG FET , . Griffin, I.J. Bahl and M.L. Balzan, "Refractory Self-aligned Gate Technology for GaAs Microwave FETs , Amplifier and Dual-modulus Prescaler GaAs IC Chip," IEEE Transactions on Microwave Theory and Techniques , for High Yield, Low Cost GaAs Microwave Integrated Circuits," IEEE Transactions on Microwave Theory , GaAs 1­13 GHz Traveling-wave Amplifier," IEEE Transactions on Microwave Theory and Techniques, Vol


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1996 - TGS8704-SCC

Abstract: X01914
Text: provided to the circuit through vias to the backside metallization. Microwave GaAs Products Phone , 4 5 6 Frequency (GHz) 2 Microwave GaAs Products Phone: 972 995 8465 Fax: 972 995 , channel temperature be maintained at the lowest possible level. 3 Microwave GaAs Products Phone , world wide web. 4 Microwave GaAs Products Phone: 972 995 8465 Fax: 972 995 4288 Email , ". The S-parameters are also available on floppy disk and the world wide web. 5 Microwave GaAs


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PDF TGS8704-SCC 45-dB TGS8704-SCC 15-dB 27-dBm X01914
2003 - HMC216MS8

Abstract: No abstract text available
Text: www.hittite.com MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 , HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. LO Drive and Vgg 30 , : 978-250-3373 Order Online at www.hittite.com v01.0801 MICROWAVE CORPORATION HMC216MS8 GaAs MMIC SMT , MICROWAVE CORPORATION v01.0801 HMC216MS8 Features IP3 (Input): +25 dBm @ +11 dBm LO LO Range = +3 to +11 dBm Conversion Loss: 8.5 dB LO / RF Isolation: 32 dB GaAs MMIC SMT DOUBLE-BALANCED


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PDF HMC216MS8 HMC216MS8
2004 - MGF1951A

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1951A Microwave Power MES FET (Leadless , SEMICONDUCTOR < GaAs FET > MGF1951A Microwave Power MES FET (Leadless Ceramic Package) TYPICAL , < GaAs FET > MGF1951A Microwave Power MES FET (Leadless Ceramic Package) Requests Regarding Safety , =12GHz,Pin=-5dBm MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1951A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top Side RWUYW


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PDF June/2004 MGF1951A MGF1951A 13dBm 12GHz 3000pcs
2004 - mitsubishi microwave

Abstract: MGF1952A
Text: June /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1952A Microwave Power MES FET (Leadless , < GaAs FET > MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top , June /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1952A Microwave Power MES FET (Leadless Ceramic , §À Å w »Ä MITSUBISHI (3/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1952A Microwave Power MES FET (Leadless Ceramic Package) S PARAMETERS f (GHz) 1 2 3 4 5 6 7


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PDF MGF1952A MGF1952A 17dBm 12GHz 3000pcs mitsubishi microwave
1999 - 1658 NEC

Abstract: SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
Text: covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and " Microwave GaAs Devices , Low Noise GaAs FET GaAs HBT NE52418 Low Distortion GaAs HBT D/C Down-converter , NE34018 NE38018 Low Noise GaAs FET GaAs HBT NE52418 Low Distortion GaAs HBT D/C , Discrete Tr. 2SC5508 Si Bipolar Tr. (fT = 25 GHz) HJ-FET NE34018 NE38018 Low Noise GaAs FET , NE38018 Low Noise GaAs FET GaAs HBT NE52418 Low Distortion GaAs HBT D/C Down-converter


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PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
2004 - mitsubishi microwave

Abstract: MGF1954A
Text: Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1954A Microwave Power MES FET (Leadless , Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1954A Microwave Power MES FET (Leadless Ceramic , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1954A Microwave Power MES FET (Leadless


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PDF MGF1954A MGF1954A 23dBm 12GHz 100mA 3000pcs mitsubishi microwave
2004 - MGF1953A

Abstract: No abstract text available
Text: Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1953A Microwave Power MES FET (Leadless , . /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1953A Microwave Power MES FET (Leadless Ceramic , MITSUBISHI (4/5) Aug. /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGF1953A Microwave


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PDF MGF1953A MGF1953A 20dBm 12GHz 100mA 3000pcs
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 , GaAs FET and HEMT devices are sensitive to electrostatic discharge (ESD). It is very important that the , ) SHIPPING CONTAINER All GaAs FET and HEMT chips are shipped in a "waffle pack" style shipping container , APPLICATION NOTES C. EQUIVALENT CIRCUIT GaAs FET CHIP LUMPED ELEMENT MODEL Note: Equivalent circuit , GaAs FETs. Destruction of the FET often occurs in microseconds. Refer to Figure III-3, page 335, for


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