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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

MZ 13001 TRANSISTOR Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: eterojunction B ipolar Transistor (HBT) pro­ cess, and has been designed fo r use as th e final linear RF a m , total gain of 35dB , depending upon th e output m atching network. mz mz mz mz mz mz mz J , collector output of the final amplifier transistor . Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided through one of these two pins


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PDF RF2114 F2114 RF2114
Not Available

Abstract: No abstract text available
Text: Bipolar Transistor (HBT) pro­ cess, and has been designed for use as the final linear RF amplifier in , network. mz Si BJT 0^G aA sH B T □ □ Si Bi-CMOS zm mz zm mz zm- mz zm- mz .344 .337 zm mz .004 .018 .014 zm: mz zm .050 .244 .228 , amplifier transistor . Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided through one of these two pins. Typically, pins 8 and 9 are


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PDF RF2114 RF2114 600MHz. RF2114_
MZ 9 TRANSISTOR

Abstract: No abstract text available
Text: amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor , dB, depending upon the output matching network. .157 .150 mz mz mz zm: zm zm zm zmzmzm .010 - .018 .014 .004 .344 .337 mz mz mz mz .050 . .244 .228 8 ° MAX 0°MIN . .065 .043 i , bypass capacitor. Same as pin 5. Positive supply for the pre-amplifier. This is an unmatched transistor , RF output. This is an unmatched collector output of the final amplifier transistor . It is internally


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PDF RF2103P RF2103P 450MHz 1000MHz. ---------27dBm ---------24dBm 21dBm 18dBm 15dBm MZ 9 TRANSISTOR
Not Available

Abstract: No abstract text available
Text: ^ mz I F = . .019 .014 .001 L- .244 .230 zm mz zm zm mz zm zm I mz mz zm j 189 EXPO SED H E A TS IN K .003 I-. .157 .150 I , advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use , out­ put transistor needs to be supplied to this pin. This can be done through a quarter wave length


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PDF RF2125P RF2125P DCS1800
Not Available

Abstract: No abstract text available
Text: . The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT , mz zmi zm mz .196 .189 .004 zm- mz . .244 .230 zm zm zm mz mz mz zm- mz EXPOSED HEATSINK .010 . .019 .014 .123 .107 mz . .087 .071 .061


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PDF RF2129 RF2129 45GHz
Not Available

Abstract: No abstract text available
Text: anufactured on an advanced Gallium A rsenide H eterojunction B ipolar Transistor (HBT) process and has been , K I 196 189 I m= ^ mz mz mz mz mz .061 .055 zm zm zm .123 .107 I i L F , . RF output and bias for the output stage. The power supply for the out put transistor needs to be


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PDF RF2125P RF2125P 1500M
Not Available

Abstract: No abstract text available
Text: manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro­ cess, and has been , the output matching network and power supply feed line. .157 .150 mz zm mz zm zm - mz zm mz ^ oq I .004 zm zm zmz I “= .196 .189 EXPOSED HEATSINK , OUT RF output and bias for the output stage. The power supply for the out­ put transistor needs


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PDF RF2129 F2129 45GHz RF2129
Not Available

Abstract: No abstract text available
Text: ­ tion. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor , EXPOSED HEATSINK .010 . .019 .014 .004 mz .196 .189 zm i mz zm mz zm mz zm - mz zm .050 mz . .244 .230 8° MAX 0°MIN ^ i mz .123 .107 mz .061 .055 . .087 .071 fw _ rffj .035 .016 .010 .007 R eferto “Handling


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PDF RF2129 RF2129 45GHz RF2129PCBA
transistor 45 f 122

Abstract: No abstract text available
Text: anufactured on an advanced G a l lium A rsenide H eterojunction B ipolar Transistor (HBT) process and has been , .150 1 j j I-. . .019 .014 .010 .004 EXPO SED H E ATS IN K I 196 189 I m= ^ mz zm zm zm zm mz mz mz mz .061 .055 zm zm zm .123 .107 I i L Jfi r F= - .244 .230 , and bias for the output stage. The power supply for the out put transistor needs to be supplied to


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PDF RF2126 F2126 transistor 45 f 122
mz 061

Abstract: No abstract text available
Text: anufactured on an advanced G a l lium A rsenide H eterojunction B ipolar Transistor (HBT) process and has been , .150 1 j j I-. .010 . .019 .014 .004 EXPO SED H E ATS IN K I 196 189 I m= ^ mz zm zm zm zm mz mz mz mz .061 .055 zm zm zm .123 .107 I i L F= - .244 .230 _ , stage. The power supply for the out put transistor needs to be supplied to this pin. This can be done


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PDF RF2126 F2126 mz 061
Not Available

Abstract: No abstract text available
Text: eterojunction B ipolar Transistor (HBT) p ro cess, and has been designed fo r use as the final linear RF am , 35dB , depending upon the output m atching network. .018 .014 . .010 .004 m= 1 mz mz mz mz mz mz , of the final a m plifier transistor . Pins 8, 9, 13, and 14 are connected internally. Bias for the


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PDF RF2114 RF2114
F2311

Abstract: No abstract text available
Text: advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use , e s c r ip tio n .004 MIN zmi zm zm- mz mz mz mz .240 .232 _jr( .056 .052


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PDF RF2311 RF2311 1600MHz. F2311 F2311
Not Available

Abstract: No abstract text available
Text: manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro­ cess, and has been , operate as specified. .156 .152 u_ mz .195 .191 zm mz . .004 MIN zrnz mz GENERAL PURPOSE AMPLIFIERS P r o d u c t D e s c r ip tio n zm - mz .240 .232 .056 .052


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PDF RF2307 RF2307 3000MHz. F2306
RF2311

Abstract: F2311
Text: . The device is m anufactured on an advanced G allium A rsenide H eterojunction B ipolar Transistor (HBT , mz . .004 MIN .195 .191 mz mz mz . .240 .232 .050 .056 .052 .022 .018 .008


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PDF RF2311 RF2311 1600M F2311
Not Available

Abstract: No abstract text available
Text: advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use , e s c r ip tio n .004 MIN zmi zm zm- mz mz mz mz .240 .232 _jr( .056 .052


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PDF RF2311 RF2311 1600MHz. RF2311PCBA
Not Available

Abstract: No abstract text available
Text: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS , amplifier. A simple power down func­ tion is included for TDD operation. .156 .152 zrnz mz zm mz zm - mz .240 .232 O ptim u m T ech n o lo g y M atch in g ® A p p lied Si BJT 0 ^G a A s H B T □ □ Si Bi-CMOS . .004 MIN mz .195 .191 .01 □ u


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PDF RF2127 RF2127 1800MHz 100mW RF2125
carlogavazzi

Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
Text: IA30ASN22x0M1 NAMUR, transistor , SCR, MOSFET and analog output types. Standard and extended sensing , NAMUR, transistor , SCR and relay output types. Sensing distances from 3 to 40mm. Housing diameters , Special Amplifiers Transistor , SCR and relay output types. Sensing distances from 50mm to 50m , Overview2004CA.qk 12/16/04 11:29 AM Page 16 Electromechanical PCB Relays Current Rating 5A 6A MZ , MZ M25 M25 CV20 1 NO - 1 CO 29x10x15 1 NO - 1 CO 12.5x29.4x25.2 1 CO


Original
PDF Overview2004CA yo1500 GH64404412 G81104406 G82104406 G85101101 G85102201 G85103301 G34485234 carlogavazzi K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
Not Available

Abstract: No abstract text available
Text: manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro­ cess, and has been , e s c r ip tio n .004 MIN zmi zm zm- mz mz mz mz .240 .232 _jr( .056 .052


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PDF RF2308 RF2308 4000MHz. F2306
Not Available

Abstract: No abstract text available
Text: advanced G a l lium A rsenide H eterojunction B ipolar Transistor (HBT) process, and has been designed for , .061 .055 mz mz mz mz zm zm zm .087 .071 .123 .107 8°M A X 0°M IN i Jn / -.0 3 5


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PDF RF2137 F2137 RF2137410
Not Available

Abstract: No abstract text available
Text: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , supply voltages. .157 .150 zmz G aAs H BT □ □ Si Bi-C M O S mz mz zm zm- mz zm mz ~zm .244 .230 zrn .061 .055 .123 .107 .087 .071 8° MAX 0Â


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PDF RF2137 RF2137 800MHz 950MHz
Not Available

Abstract: No abstract text available
Text: Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the , . f 196 189 I . .157 .150 I zm mz zm ; zm mz un I ! zm mz zm zm mz F L 0^G aA sH B T □ □ Si Bi-C M O S J .061 .055 , i _ jn _ .035 .016 □ EXPOSED HEATSINK .003 .001 I 1 ^ mz - .244 .230


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PDF RF2128P RF2128P 45GHz 330JC 331JC S100-3C
Not Available

Abstract: No abstract text available
Text: part operates from a 3V to 5V supply, with no negative voltage required. mz mz mz mz mz mz mz , oscillator used is below: Pin 1 I ~\ \ \ I C4 O — C3 Pin 2 The transistor is acting


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PDF RF9901 RF9901 16-lead RF9902 PCC473BTR-ND 0805CS-180XM 0805CS-101XKBC 1008CT-040XMBC MPSS100-2C MPSS100-3C
Not Available

Abstract: No abstract text available
Text: Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF , .004 mz zm mz zm zm mz zm zm mz zm j zm ^ mz i i F


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PDF RF2126 2500MHz. RF2126
ECUV1H102KBN

Abstract: No abstract text available
Text: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS , amplifier. A simple power down func­ tion is included for TDD operation. .156 .152 mz .195 .191 zm mz zm - mz .240 .232 O ptim u m T ech n o lo g y M atch in g ® A p p lied Si BJT 0 ^G a A s H B T □ □ Si Bi-CMOS . .004 MIN zrnz mz .01 □ u


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PDF RF2127 RF2127 1800MHz 100mW RF2125 50WVDC 10WVDC 150WVDC ECU-V1H102KBN ECUV1H102KBN
Not Available

Abstract: No abstract text available
Text: part operates from a 3V to 5V supply, with no negative voltage required. mz mz mz mz mz mz mz , oscillator used is below: Pin 1 ~\ \ \ I I C4 O— C3 Pin 2 The transistor is acting as


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PDF RF9901 RF9901 16-lead RF9902 RF9901PCBA
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