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Part Manufacturer Description Datasheet Download Buy Part
LT1332CNW Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory
LT1332CNW#PBF Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory
LTC1262CS8 Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1262IS8#TRPBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262IS8#TR Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262IS8#PBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

MXIC flash Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
PM-0254

Abstract: MXIc MX28F4100 Q0-Q15
Text: bits switchable. MXIC 's Flash memories offer the most cost-effective and reliable read/write , ) controls. MXIC 's Flash memories augment EPROM functionality with in-circuit electrical erasure and , maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 10 , Wl^™ MX28F41OO MACRONIX, INC._^ * 4M-BIT (51 SK x 8) CMOS FLASH MEMORY FEATURES • 524 , €¢ Advanced CMOS Flash memory technology • Package type: - 44-pin SOP - 48-pin TSOP (Type 1) GENERAL


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PDF MX28F41OO 288x8/262 144x16 120/150/200ns 50fis 100mA techno94 Q15/A-1 Q13ZZ MX28F4100 PM-0254 MXIc Q0-Q15
mxic

Abstract: MX29L811 MX29L1611 MXIC flash
Text: The MX29L811 is a 8-mega bit pagemode Flash memory organized as either 512K wordx16 or 1M bytex8. The MX29L811 includes 16 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC 's Flash memories offer the most , chip enable CE, output enable (OE), and write enable (WE) controls. MXIC 's Flash memories augment , operation of the device. Reading data out of the device is similar to reading from an EPROM. MXIC Flash , PRODUCT BRIEF MX29L811 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM


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PDF MX29L811 8/512K 100/120ns 30/50ns 200ms 500mil) Q15/A-1 mxic MX29L811 MX29L1611 MXIC flash
0423-J

Abstract: PM-0254
Text: -mega bit Flash memory organ ized as 512K bytes of 8 bits or 256K words of 16 bits switchable. MXIC 's Flash , MX28F4100 has separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment , . MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combina tion , /2HBK x 1BJ CMOS FLASH MEMORY FEATURES 524,288x8/262,144x16 switchable Fast access time: 100/120


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PDF 4M-BITIS12K 288x8/262 144x16 100/120/150ns A0-A17 Q0-Q14 Q15/A-1 0423-J PM-0254
MX28F1OOOC

Abstract: No abstract text available
Text: -mega bit Flash memory or ganized as 128K bytes of 8 bits each. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO M functional ity , maximum EPRO M compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000/1 , MA. MACOOMX. INC _ _ _ _ _ _MX28F1OOOC 1M-BIT t12BKx 8) CMOS FLASH MEMORY FEATURES · 131 , minimum erase/program cycles Latch-up protected to 100mA from -1 to VCC+1V Advanced CM O S Flash memory


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PDF MX28F1OOOC t12BKx 100mA 32-pin MX28F1000C A0-A16 MX28F1OOOC
mxic

Abstract: PM-0254
Text: ized as 512K bytes of 8 bits or 256K words of 16 bits switchable. MXIC 's Flash memories offer the most , (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM functional ity with , during erase and programming, while maintain ing maximum EPROM compatibility. MXIC Flash technology , blocks or 8,912 words by 32 blocks) MX28F41QO 4M -BIT [51S K X 8) CMOS FLASH MEMORY · Auto Erase , Latch-up protected to 100mA from -1 to VCC+1V · Advanced CMOS Flash memory technology · Package type: - 44


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PDF 288x8/262 144x16 120/150/200ns 100nAmaximum MX28F41QO 100mA 44-pin 48-pin X28F4100 -1-A17 mxic PM-0254
MX28F2000

Abstract: No abstract text available
Text: The MX28F2000 is a 2-mega bit Flash memory organ ized as 256K bytes of 8 bits each. MXIC 's Flash , MX28F2000 hag separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO , , while maintaining maxi mum EPRO M compatibility. MXIC Flash technology reliably stores memory con tents , MACRONK.MC. FEATURES TM MX28F2000 SM-BITI28BK x 8) CMOS FLASH MEMORY · 262,144 bytes by , +1V · Advanced CM O S Flash memory technology · Compatible with JEDEC-standard byte-wide 32-pin EPROM


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PDF MX28F2000 SM-BITI28BK 16-KB 96-KB 128-KB 100mA A0-A17 MX28F2000
48-pin TSOP I flash memory

Abstract: No abstract text available
Text: 48-pin TSO P (Type 1) G E N E R A L DESCRIPTION The MX28F2100 is a 2-mega bit Flash memory organ ized as 256K bytes of 8 bits or 128K words of 16 bits switchable. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO M functional ity , supply levels during erase and programming, while maintain ing maximum EPRO M compatibility. MXIC Flash , mA MACHONK. INC. u ijw v y IN/IX28F2100 SM-BITISBBK x 8] CMOS FLASH MEMORY FEA T U R ES


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PDF IN/IX28F2100 144x8/131 072x16 90/120/150ns A0-A16 Q0-Q14 Q15/A-1 48-pin TSOP I flash memory
MX28F1000

Abstract: macronix flash 12.0v
Text: -mega bit Flash memory organ ized as 128K bytes of 8 bits each. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM functional ity , maintaining m axi mum EPROM compatibility. MXIC Flash technology reliably stores memory con tents even after , m A MACRONIX. INC. MX28F1 OOO 1 M-BIT [1 28 K x 8] CMOS FLASH MEMORY FEATURES · 131,072 , ,000 minimum erase/program cycles Latch-up protected to 100mA from -1 to VCC+1V Advanced CMOS Flash


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PDF MX28F1 100ji 100mA 32-pin 32-pin16 MX28F1000 MX28F1000 macronix flash 12.0v
1998 - B0000H-BFFFFH

Abstract: No abstract text available
Text: compatible with single-power supply Flash GENERAL DESCRIPTION The MX29F800T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC 's Flash memories offer the most , ) and output enable (OE) controls. MXIC 's Flash memories augment EPROM functionality with in-circuit , programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory , INDEX ADVANCED INFORMATION MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES · 1


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PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/14us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0578 B0000H-BFFFFH
MX* 64M-Bit eprom

Abstract: A0-A21 Q0-Q15
Text: which are individually erasable. MXIC 's Flash memories offer the most cost-effective and reliable read , lock and unlock sectors. MXIC 's Flash memories augment EPROM functionality with in-circuit , range of 1.65V~1.95V. MXIC Flash technology reliably stores memory contents even after 100,000 erase , BRIEF MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES · , ) - Word program suspend to read - Sector erase suspend to program or read - Common Flash Interface


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PDF MX28F640W30T/B 64M-BIT 32Kword 128-bit 64-bit DEC/09/2002 MX* 64M-Bit eprom A0-A21 Q0-Q15
mxic

Abstract: MX* 64M-Bit eprom 8088 microprocessor pin description A0-A21 Q0-Q15 64-mega
Text: which are individually erasable. MXIC 's Flash memories offer the most cost-effective and reliable read , lock and unlock sectors. MXIC 's Flash memories augment EPROM functionality with in-circuit , range of 1.65V~1.95V. MXIC Flash technology reliably stores memory contents even after 100,000 erase , BRIEF MX28F640W18T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES · , ) - Word program suspend to read - Sector erase suspend to program or read - Common Flash Interface


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PDF MX28F640W18T/B 64M-BIT 32Kword 128-bit 64-bit DEC/09/ mxic MX* 64M-Bit eprom 8088 microprocessor pin description A0-A21 Q0-Q15 64-mega
2005 - EM002

Abstract: elan digital e8
Text: :. 7 AMD & MXIC flash IC control library , mode control library. AMD & MXIC flash IC control library. External device control library. Touch , must work in the stable frequency. AMD & MXIC flash IC control library: RAM: Unbank RAM 0x53 is , flash IC: AM29LV800T/B, AM29LV160 T/B, AM29LV320 T/B, AM29LV640 T/B MXIC flash IC: MX29LV800 T/B , programming. Change partial programming size. (32KW, 64KW, 128KW & 256KW) Change flash IC type. (AMD or MXIC


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PDF ePG3231-EM002 EPG3231 QFP128 QFP-128L QFP128 POD-035 EM002 elan digital e8
Not Available

Abstract: No abstract text available
Text: P tF S IL C llB K ^ Í P lV MXIC MX28F2000P 2M-BITÍ256K x 8) CMOS FLASH MEMORY FEATURES , -pin PLCC - 32-pin TSOP (Type 1) GENERAL DESCRIPTION MXIC Flash technology reliably stores memory con , Flash memory or­ ganized as 256K bytes of 8 bits each. MXIC 's Flash memories offer the most , to 100 milliamps on address and data pin from -1V to VCC + 1V. MXIC 's Flash memories augment , electrical erase are con­ trolled internal to the device. MXIC 's Flash technology combines years of


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PDF MX28F2000P 100jiA 16-KB 100mA MX28F2000PTC-90C4 MX28F2000PTC-12C4 MX28F2000PRC-90C4 MX28F2000PRC-12C4 MX28F2000PPC-90C4 150ns
Not Available

Abstract: No abstract text available
Text: MX28F1000P is a 1-mega bit Flash memory or­ ganized as 128K bytes of 8 bits each. MXIC 's Flash memories , ) controls. MXIC 's Flash memories augment EPROM functional­ ity with in-circuit electrical erasure and , supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash , this text. All setup and hold times are with respect to the WE signal. MXIC 's Flash technology , ■voac MX28F1 OOOP 1 M-BIT(1 28K x 8} CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8


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PDF MX28F1 16-KB 100mA 1000P X28F1000P 28F1000P 150ns Q1034
Not Available

Abstract: No abstract text available
Text: Flash memory or­ ganized as 256K bytes of 8 bits. MXIC 's Flash memo­ ries offer the most , (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM functional­ ity with , during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology , MXIC MX28F002T/B 2 M - B I T J 2 5 6 K x 8 ) C M O S FLA SH M E M O R Y FEATURES 262,144x8 , protection is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses


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PDF MX28F002T/B 144x8 70/90/120ns 100jiAmaximum 16K-Byte 96K-Byte 128K-Byte 100mA QGQ117ti MX2SF002T/B
28F1000

Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
Text: DESCRIPTION The MX28F1000 is a 1-mega bit Flash memory organ ized as 128K bytes ot 8 bits each. MXIC 's Flash , MX28F1000 has separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment , , while maintaining maxi mum EPROM compatibility. MXIC Flash technology reliably stores memory con tents , . All setup and hold times are with respect to the WE signal. MXIC 's Flash technology combines years of , MX28F1000 1M-BIT (*l 28K x 8 ) CMOS FLASH MEMORY FEATURES · 131,072 bytes by 8-bit organization ·


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PDF MX28F1000 100mA 10OOQC-12 10OOQC-15 28F1000T 28F1000TC 28F1000R 28F1000 28F1000PC 28f1000p MX28F1000 MXIC MX
MX28F1000PC-12

Abstract: No abstract text available
Text: MX28F1000 has separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment , programming, while maintaining maxi­ mum EPROM compatibility. MXIC Flash technology reliably stores memory , algorithms. The MX28F1000 is a 1-mega bit Flash memory organ­ ized as 128K bytes of 8 bits each. MXIC , the device. MXIC 's Flash technology combines years of EPROM experience to produce the highest , _ MX28F10OP 1 M-BIT n S8K x 81 CMOS FLASH MEMORY FEATURES


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PDF MX28F10OP 10jis 100mA teC-90 MX28F1000PC-12 MX28F1000PC-15 MX28F1000QC-90 MX28F1000QC-12 MX28F1000QC-15 MX28F1000T MX28F1000PC-12
MX28F4000

Abstract: No abstract text available
Text: Flash memory organ­ ized as 512K bytes of 8 bits each. MXIC 's Flash memories offer the most , separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM , , while maintaining maxi­ mum EPROM compatibility. MXIC Flash technology reliably stores memory con , . MXIC 's Flash technology combines years of EPROM experience to produce the highest levels of quality , 100mA from -1 to VCC+1V Advanced CMOS Flash memory technology Compatible with JEDEC-standard byte-wide


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PDF MX28F4000 120/150/200ns 100mA MX28F4000PC-15 MX28F4000PC-20 MX28F4000MC-12 MX28F4000MC-15 MX28F4000MC-20 MX28F4000TC-12 MX28F4000TC-15 MX28F4000
2005 - EN29LV160BB

Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc , system design from MXIC MX29LV160D Flash to Eon EN29LV160B Flash . 2. GENERAL FUNCTION COMPARISON , Eon MXIC Manufacture ID: 7Fh (A8 = "0"), 1Ch (A8 = "1"). Manufacture ID: C2h Part No


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PDF EN29LV160B MX29LV160D MX29LV160D EN29LV160B EN29LV160BB EN29LV160BT MX29LV160DB MX29LV160DT 2249h mxic
2005 - MX29GL640E

Abstract: MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs MXIC Flash MX29GL640E/H/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21 ©2005 Eon Silicon Solution , how to implement a system design from MXIC MX29GL640E/H/L/T/B Flash to Eon EN29GL064H/L/T/B Flash , , Device Identifications comparison Eon MXIC Manufacture ID: 007Fh (A8 = "0"), 001Ch (A8 = "1").


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PDF EN29GL064H/L/T/B MX29GL640E/H/L/T/B MX29GL640E/H/L/T/B EN29GL064H/L/T/B 500us 500ns 200ns MX29GL640E MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
MXIC MX

Abstract: mx28F1000PPC-15 28F1000 28f1000p
Text: of 8 bits each. MXIC 's Flash memories offer the most cost-effective and reliable read/write , ) controls. MXIC 's Flash memories augment EPROM functional ity with in-circuit electrical erasure and , levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology , 1M-BIT Il 8 8K x 8 ) CMOS FLASH MEMORY FEATURES · 131,072 bytes by 8-bit organization · Fast access , protected to 100mA from -1 to VCC+1V Advanced CMOS Flash memory technology Compatible with JEDEC-standard


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PDF 16-KB 100mA 32-PIN MX28F1 MXIC MX mx28F1000PPC-15 28F1000 28f1000p
1998 - INTRODUCTION OF AUTOMATIC ROOM power CONTROL

Abstract: MX28F2000P 28F2000P 28F2000
Text: bytes of 8 bits each. MXIC 's Flash memories offer the most cost-effective and reliable read/write , to be reprogrammed and erased in-system or in-standard EPROM programmers. MXIC Flash technology , data pin from -1V to VCC + 1V. MXIC 's Flash memories augment EPROM functionality with in-circuit , . MXIC 's Flash technology combines years of EPROM experience to produce the highest levels of quality , Introduction Selection Guide MX28F2000P 2M-BIT (256K x 8) CMOS FLASH MEMORY FEATURES


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PDF MX28F2000P 16-KB 100mA INTRODUCTION OF AUTOMATIC ROOM power CONTROL MX28F2000P 28F2000P 28F2000
1998 - 28F2000

Abstract: MX28F2000P MX28F2000T INTRODUCTION OF AUTOMATIC ROOM power CONTROL MX28F2000TPC-12C4
Text: -pin plastic DIP ­ 32-pin PLCC GENERAL DESCRIPTION MXIC Flash technology reliably stores memory contents , Flash memory organized as 256K bytes of 8 bits each. MXIC 's Flash memories offer the most , data pin from -1V to VCC + 1V. MXIC 's Flash memories augment EPROM functionality with in-circuit , . MXIC 's Flash technology combines years of EPROM experience to produce the highest levels of quality , Introduction MX28F2000T 2M-BIT (256K x 8) CMOS FLASH MEMORY FEATURES · 262,144 bytes by


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PDF MX28F2000T 16-KB 100mA 28F2000 MX28F2000P MX28F2000T INTRODUCTION OF AUTOMATIC ROOM power CONTROL MX28F2000TPC-12C4
2005 - EN29LV320BB

Abstract: EN29lv320BT MX29LV320DB EN29LV320B MX29LV320D MX29LV320DT
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV320B vs MXIC Flash MX29LV320D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc , system design from MXIC MX29LV320D Flash to Eon EN29LV320B Flash . 2. GENERAL FUNCTION COMPARISON , CONSIDERATIONS 4.1 Manufacturer, Device Identification and Autoselect Information Eon MXIC Manufacture ID


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PDF EN29LV320B MX29LV320D MX29LV320D EN29LV320B EN29LV320BB EN29lv320BT MX29LV320DB MX29LV320DT
1998 - Not Available

Abstract: No abstract text available
Text: The MX29F001T/B is a 1-mega bit Flash memory organized as 128K bytes of 8 bits only MXIC 's Flash , MX29F001T/B has separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment , . MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of , INDEX NEW ADVANCED INFORMATION MX29F001T/B 1M-BIT [128K x 8]CMOS FLASH MEMORY FEATURES ·


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PDF MX29F001T/B 131072x8 70/90/120ns 32K-Bytex1, 64K-Byte PM0515
Supplyframe Tracking Pixel