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2012 - MXIC MX25l12873f

Abstract: MX25L12873F
Text: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES , ). 56 2 REV. 1.0, MAR. 22, 2013 MX25L12873F 9-25. 9-26. 9-27. 9-28. 9-29. 9-30 , . 98 P/N: PM1914 3 REV. 1.0, MAR. 22, 2013 MX25L12873F 3V 128M-BIT [x 1/x 2/x 4] CMOS , , MAR. 22, 2013 MX25L12873F • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x , P/N: PM1914 5 REV. 1.0, MAR. 22, 2013 MX25L12873F 2. GENERAL DESCRIPTION MX25L12873F is


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PDF MX25L12873F PM1914 MXIC MX25l12873f MX25L12873F
2012 - MX25L12873F

Abstract: MXIC MX25l12873f
Text: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES , ). 56 2 REV. 1.1, OCT. 31, 2013 MX25L12873F 9-25. 9-26. 9-27. 9-28. 9-29. 9-30 , . 98 P/N: PM1914 3 REV. 1.1, OCT. 31, 2013 MX25L12873F 3V 128M-BIT [x 1/x 2/x 4] CMOS , , OCT. 31, 2013 MX25L12873F • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x , Halogen-free P/N: PM1914 5 REV. 1.1, OCT. 31, 2013 MX25L12873F 2. GENERAL DESCRIPTION MX25L12873F


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PDF MX25L12873F PM1914 MX25L12873F MXIC MX25l12873f
2012 - 25l12873f

Abstract: MX25L12873F MX25L12873FM2I MXIC MX JESD216 tbe32 JESD21 MX25L12873 MXIC MX25l12873f QPI02
Text: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES , ). 56 REV. 0.00, NOV. 14, 2012 2 MX25L12873F 4 x I/O Page Program (4PP , INFORMATION MX25L12873F 3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES , input P/N: PM1914 4 REV. 0.00, NOV. 14, 2012 MX25L12873F · SI/SIO0 - Serial Data Input or , : PM1914 5 REV. 0.00, NOV. 14, 2012 MX25L12873F 2. GENERAL DESCRIPTION MX25L12873F is 128Mb


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PDF MX25L12873F MX25L12873F PM1914 25l12873f MX25L12873FM2I MXIC MX JESD216 tbe32 JESD21 MX25L12873 MXIC MX25l12873f QPI02
2007 - WINBOND APPLICATION NOTE

Abstract: WINBOND Serial flash cross reference S25FL080A mxic spi flash MXIC serial Flash AT25F4096 MXIC Lot Code Identification MXIC SPI Flash MX25L8005
Text: 4M-8M SPI Cross Reference Spansion®, STM®, SST®, MXIC , Atmel® & Winbond® Application Note By , and are produced by a number of Flash manufactures including: Spansion, SST, ST, MXIC , Atmel and , manufactures and can be used to replace the following devices: ST M25P40/80, SST SST25VF040B/080B, MXIC , S25FL040A SPANSION S25FL008A ST M25P40 M25P80 SST SST25VF040B SST25VF080B MXIC , 64 33 33 33 25 33 Atmel AT25F4096 MXIC MX25L400/ 800 2.7V - 3.6V 64 Typ


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PDF M25P40/80, SST25VF040B/080B, MX25L400/800, AT25F4096 W25p40/80. WINBOND APPLICATION NOTE WINBOND Serial flash cross reference S25FL080A mxic spi flash MXIC serial Flash MXIC Lot Code Identification MXIC SPI Flash MX25L8005
block diagram for automatic room power control layout

Abstract: 28F2100B
Text: 128K words of 16 bits switchable. MXIC 's Flash memories offer the most cost-effective and reliable read , ) controls. MXIC 's Flash memories augment EPROM function a lity w ith in -c irc u it e le c tric a l era sure , programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and , algorithms. The hig he st degree of la tch-up p ro te ctio n is achieved with MXIC 's proprietary non-epi


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PDF 144x8/131 072x16 70/90/120ns 50jas 16K-Byte 96K-Byte 128K-Byte 100mA X28F2100B block diagram for automatic room power control layout 28F2100B
26C1024

Abstract: No abstract text available
Text: (Multiple-Time Programmable Read Only Memory) organized as 64K words of 16 bits each. MXIC 's MTP ROMs offer the , bus contention, the MX26C1024A has separate chip enable (CE) and output enable (OE ) controls. MXIC , levels during erase and program ming, while maintaining maximum EPROM compat ibility. MXIC MTP ROMTM tech n o lo g y re lia b ly stores memory contents after 100 erase and program cy cles. The MXIC cell is , package, 44 lead PLCC, 40 TSOP (I) package. 1 REV. 1.5, JUN 11, 1998 MXIC PIN CONFIGURATIONS


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PDF 16-bit 10OjaA 44-pin 40-pin l-847-963-1909 26C1024
Not Available

Abstract: No abstract text available
Text: : PM0403 1 MXIC 3.0 3.1 MX98742 SYSTEM DIAGRAM REPEATER WITH A BUILT-IN BRIDGE Figure 3-1 , MXIC 131 S IG D E T A /L K G D /C O L A MX98742 I, TTL TX Mode : Signal Detect Port A. This , . Mux'd with TX pin SIGDET A. 5 MXIC MX98742 Table 5-3. Port A Meddia Independent Interface , signals. If 7-Wire mode is selected, this is the 10MHz recov­ ered clock. 7 MXIC 70 S IG D E , /10 B. Mux'd with TX mode pin SIGDET B. 8 MXIC MX98742 Table 5-7. Buffer SRAM Interface


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PDF 10BASE 512-bit MX98742 25MHz 160-Pin
PM-0254

Abstract: MXIc MX28F4100 Q0-Q15
Text: bits switchable. MXIC 's Flash memories offer the most cost-effective and reliable read/write , ) controls. MXIC 's Flash memories augment EPROM functionality with in-circuit electrical erasure and , maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming , latch-up protection is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for


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PDF MX28F41OO 288x8/262 144x16 120/150/200ns 50fis 100mA techno94 Q15/A-1 Q13ZZ MX28F4100 PM-0254 MXIc Q0-Q15
1997 - 28F002-T

Abstract: No abstract text available
Text: 28F002BX-T/B Yes Intel 28F002BL-T/B Yes MXIC 28F002T/B Yes* H/W Pin 12* WP# don‘ t use (DU , MXIC : JP close Pin 12 JP WP# 1. Icc current during deep power-down mode is 0.20 uA typical , different pin configuration between Intel 28F002BX and MXIC 28F002 5 APPLICATION NOTE 2-2 Intel 28F002 V.S. MXIC 28F002BX (Boot Block Handling) RP# Intel 28F002BV 2.0 ~ 6.5V - standard read mode , locked MXIC 28F002 0 ~ 6V - boot block locked 11.4 ~ 12.6V - boot block unlock -0.3 ~ 0.8V - READ


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PDF 28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T
nrzi to nrz circuit diagram

Abstract: nrzi to nrz converter circuit diagram MXIC MX mxic
Text: REV. 1.4, SEP. 15, 1997 MXIC 2.1.1 100 BASE-TX HUB APPLICATION MX98704 8 ports 100 , MXIC 3.0 PIN ASSIGMENT 3.1 PIN ASSIGNMENT-52 LEAD PLASTIC LEADED CHIP CARRIER RT LP RSCLK GND , z HI X I- o o >w 3 MXIC 4.0 PIN DESCRIPTIONS MX Physicial Data Transceiver (PDTR , MXIC PIN (PLCC) 25 26 27 28 29 30 31 32 33 MX98704 PIN NAME Test GND VDD GND VDD GND OP3 SYMCLK , 43 44 45 VDD GND VDD I I I 5 MXIC 5.0 FUNCTIONAL DESCRIPTION Functional block diagram


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PDF 125-Mhz 25-Mhz 100Base-Tx 52-PIN MX98704 nrzi to nrz circuit diagram nrzi to nrz converter circuit diagram MXIC MX mxic
mxic

Abstract: MX29L811 MX29L1611 MXIC flash
Text: MX29L811 includes 16 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC 's Flash memories offer the most , chip enable CE, output enable (OE), and write enable (WE) controls. MXIC 's Flash memories augment , operation of the device. Reading data out of the device is similar to reading from an EPROM. MXIC Flash technology reliably stores memory contents even after 10,000 cycles. The MXIC 's cell is designed to , highest degree of latch-up protection is achieved with MXIC 's proprietary non-epi process. Latch-up


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PDF MX29L811 8/512K 100/120ns 30/50ns 200ms 500mil) Q15/A-1 mxic MX29L811 MX29L1611 MXIC flash
Not Available

Abstract: No abstract text available
Text: MXIC MX8325- 1 BLOCK DIAGRAM 14.318MHZ CPUCLK 1/2 CPUCLK 33/48MHZ 24MHZ BOUTOO , MXIC MX8325- 1 PIN DESCRIPTION (For MX8355-03) SYMBOL PIN TYPE PIN NUMBER DESCRIPTION , ), internal pull high (20mA) 3 MXIC MX8325- 1 FREQUENCY TABLE MS0=1, 33/48 SELECT=H MS0=1, 33 , =5V V 2.4 V for buffers only Ohms MXIC MX8325- 1 CAPACITANCE TA = 25°C, f = 1.0 , Frequency 14.318 14.318 5 14.318 MHz MXIC M X8325-1 WAVEFORMS ORDERING


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PDF 500ps 28-PIN MX8325-1
0423-J

Abstract: PM-0254
Text: -mega bit Flash memory organ ized as 512K bytes of 8 bits or 256K words of 16 bits switchable. MXIC 's Flash , MX28F4100 has separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment , . MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combina tion , with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps


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PDF 4M-BITIS12K 288x8/262 144x16 100/120/150ns A0-A17 Q0-Q14 Q15/A-1 0423-J PM-0254
mxic

Abstract: PM-0254
Text: ized as 512K bytes of 8 bits or 256K words of 16 bits switchable. MXIC 's Flash memories offer the most , (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM functional ity with , during erase and programming, while maintain ing maximum EPROM compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to , /Erase algorithms. The highest degree of latch-up protection is achieved with MXIC 's proprietary non-epi


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PDF 288x8/262 144x16 120/150/200ns 100nAmaximum MX28F41QO 100mA 44-pin 48-pin X28F4100 -1-A17 mxic PM-0254
768KHZ

Abstract: MX93011 MX93011A X321 mxic dsp instruction set
Text: , JUL 5, 1996 MXIC MX93Û1 1 A 2.0 FUNCTION BLOCK DIAGRAM m < ^ n n x x ol £o x fg X ro ZD , state ZR high Impedance state with soft latch 6 MXIC MX93Û11A 3.2 PIN TYPE SUMMARY : INPUT : CMOS , \ is invalid the MX93011A will bring HOLDA\ to high and resume normal operation. 8 MXIC MX93à , , BZ BACC, RET, RETI, Interrupt, hardware reset program counter 12 MXIC MX93011A 5.1 TABLE OF 10 , pins, respectively. 14 MXIC MX93Û11A 6.4 SVR : Shift Variable Register (mapped to 10 register 03


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PDF MX9301 MX93011 MX93011A 16-bit, ap93011A MX93Q11A 100-PIN 768KHZ MX93011A X321 mxic dsp instruction set
MX28F1OOOC

Abstract: No abstract text available
Text: -mega bit Flash memory or ganized as 128K bytes of 8 bits each. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO M functional ity , maximum EPRO M compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000/1,000 erase and program cy cles. The MXIC cell is designed to optimize the erase and programming , is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up to


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PDF MX28F1OOOC t12BKx 100mA 32-pin MX28F1000C A0-A16 MX28F1OOOC
48-pin TSOP I flash memory

Abstract: No abstract text available
Text: ized as 256K bytes of 8 bits or 128K words of 16 bits switchable. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO M functional ity , supply levels during erase and programming, while maintain ing maximum EPRO M compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is , auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC


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PDF IN/IX28F2100 144x8/131 072x16 90/120/150ns A0-A16 Q0-Q14 Q15/A-1 48-pin TSOP I flash memory
2001 - mx29lv160

Abstract: SA30 SA33 mxic MX29LV
Text: . 1. The Difference Architectures : The difference between MXIC 's MX29LV160T/B - boot sectored device , . Thus, 512 sectors or 32 blocks compose the whole flash. For MXIC 's devices, the bottom or top 32Kwords , to Vcc through a resistor to complete the reset when power on stage. The Ready/Busy# pin on MXIC , completion of program or erase cycles. It's a signal output pin with open drain on MXIC device, ignore it , SST's. The /BYTE signal on MXIC is used to control whether the device operates in the byte or word


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PDF SST39LF/VF160 MX29LV160T/B SST39LF160/VF160 mx29lv160 SA30 SA33 mxic MX29LV
MX28F2000

Abstract: No abstract text available
Text: The MX28F2000 is a 2-mega bit Flash memory organ ized as 256K bytes of 8 bits each. MXIC 's Flash , MX28F2000 hag separate chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPRO , , while maintaining maxi mum EPRO M compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and , protection is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up


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PDF MX28F2000 SM-BITI28BK 16-KB 96-KB 128-KB 100mA A0-A17 MX28F2000
1998 - B0000H-BFFFFH

Abstract: No abstract text available
Text: memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC 's Flash memories offer the most , ) and output enable (OE) controls. MXIC 's Flash memories augment EPROM functionality with in-circuit , programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and , degree of latch-up protection is achieved with MXIC 's proprietary non-epi process. Latch-up protection is


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PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/14us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0578 B0000H-BFFFFH
Not Available

Abstract: No abstract text available
Text: MXIC M X2 9 FI 6 1 O A/ B 1 6 M-BIT(2 M X 8 / 1 M X 1 6) CMOS SINGLE VOLTAGE FLASH EEPROM , 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXIC 's Flash memories offer the most cost-effective , is similar to reading from an EPROM. MXIC Flash technology reliably stores memory contents even after 100,000 cycles. The MXIC 's cell is designed to optimize the erase and programming mechanisms. In , achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up to 100


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PDF 70/90/120ns MX29F1610A/ 44-PIN 48-PIN
MX28F1000

Abstract: macronix flash 12.0v
Text: -mega bit Flash memory organ ized as 128K bytes of 8 bits each. MXIC 's Flash memories offer the most , chip enable (CE) and output enable (OE ) controls. MXIC 's Flash memories augment EPROM functional ity , maintaining m axi mum EPROM compatibility. MXIC Flash technology reliably stores memory con tents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming , degree of latch-up protection is achieved with MXIC 's proprietary non-epi process. Latch-up protection is


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PDF MX28F1 100ji 100mA 32-pin 32-pin16 MX28F1000 MX28F1000 macronix flash 12.0v
MX* 64M-Bit eprom

Abstract: A0-A21 Q0-Q15
Text: which are individually erasable. MXIC 's Flash memories offer the most cost-effective and reliable read , lock and unlock sectors. MXIC 's Flash memories augment EPROM functionality with in-circuit , range of 1.65V~1.95V. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In , is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up


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PDF MX28F640W30T/B 64M-BIT 32Kword 128-bit 64-bit DEC/09/2002 MX* 64M-Bit eprom A0-A21 Q0-Q15
Not Available

Abstract: No abstract text available
Text: /N: PM0334 are trademarks of Rambus Inc. REV. 1.4, APR. 15, 1996 MXIC MX8335 FUNCTIONAL , =0.01uF, C2=0.1 uF, and C3=47uF. 2 MXIC MX8335 ■FIG 1 INTFRFACF CIRCUITRY 1 9 3 o , CLKOUT 2.4 30 CONDITIONS V 35 15 3 MXIC MX8335 AC CHARACTERISTICS TA* = 0 , PART NO. PACKAGE MX8335MC 8-PIN SOP WAVE FROMS 4 Eaual loadina MXIC MX8335


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PDF 200MHz 267MHz 150mil) MX8335 267MHz. 67MHz 67MHz
mxic

Abstract: MX* 64M-Bit eprom 8088 microprocessor pin description A0-A21 Q0-Q15 64-mega
Text: which are individually erasable. MXIC 's Flash memories offer the most cost-effective and reliable read , lock and unlock sectors. MXIC 's Flash memories augment EPROM functionality with in-circuit , range of 1.65V~1.95V. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In , is achieved with MXIC 's proprietary non-epi process. Latch-up protection is proved for stresses up


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PDF MX28F640W18T/B 64M-BIT 32Kword 128-bit 64-bit DEC/09/ mxic MX* 64M-Bit eprom 8088 microprocessor pin description A0-A21 Q0-Q15 64-mega
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