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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MWS5114D1 Rochester Electronics - - -
MWS5114D2 Rochester Electronics - - -
MWS5114D2 Harris Semiconductor Rochester Electronics 308 $22.79 $18.52
MWS5114D2X Rochester Electronics - - -
MWS5114D3 Rochester Electronics - - -
MWS5114D3X Rochester Electronics - - -
MWS5114D3X Harris Semiconductor Bristol Electronics 99 - -
MWS5114E RCA New Advantage Corporation 65 - -
MWS5114E1 Rochester Electronics - - -
MWS5114E2 Rochester Electronics - - -
MWS5114E2X Rochester Electronics - - -
MWS5114E3 Rochester Electronics - - -
MWS5114E3 RCA New Advantage Corporation 7 - -
MWS5114H Rochester Electronics - - -

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MWS5114 datasheet (33)

Part Manufacturer Description Type PDF
MWS5114 Harris Semiconductor 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114 Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MWS5114-1 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MWS5114-2 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MWS5114-3 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MWS5114-5 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MWS5114-5D Others IC Datasheet (Short Description and Cross Reference Only) Scan PDF
MWS5114-5E Others IC Datasheet (Short Description and Cross Reference Only) Scan PDF
MWS5114D Others IC Datasheet (Short Description and Cross Reference Only) Scan PDF
MWS5114D1 Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114D1 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MWS5114D2 Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114D2 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MWS5114D2Z Intersil IC SRAM CHIP ASYNC SINGLE 5V 4KBIT 1KX4 250NS 10SBDIP Original PDF
MWS5114D3 Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114D3 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MWS5114D3X Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114D3X Intersil 1024-Word x 4-Bit LSI Static RAM Original PDF
MWS5114D3X Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

MWS5114 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2114 Ram pinout 18

Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 STATIC RAM 2114 memory ic 2114
Text: CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V) VDD (V) MIN , ) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER SYMBOL VO (V) VIN (V , MWS5114E1 0oC to +70oC MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 0oC to +70oC PACKAGE , ) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX , 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 125 µA


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PDF MWS5114 1024-Word MWS5114 2114 Ram pinout 18 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 STATIC RAM 2114 memory ic 2114
2114 Ram pinout 18

Abstract: No abstract text available
Text: Data Retention Quiescent MWS5114-3 MWS5114-2 MWS5114-1 Chip Deselect to Data Retention Time Recovery to , TEMPERATURE RANGE 0°C to +70°C 200ns MWS5114E3 MWS5114E3X MWS5114D3 MWS5114D3X 250ns MWS5114E2 MWS5114E2X MWS5114D2 MWS5114D2X 300ns MWS5114E1 MWS5114E1X MWS5114D1 MWS5114D1X 0°C to +70°C Pinout 1 8L E A D , 10ns; c l = sopF and 1 m LIMITS MWS5114-3 CHARACTERISTIC SYMBOL (Note 1) MIN (Note 2) TYP MAX MWS5114-2 , Electrical Characteristics At t * = o°c to +70°c, v d d = ± 5%, Except as Noted LIMITS MWS5114-2 MIN


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PDF MWS5114 1024-Word MWS5114 MWS5114-3 MWS5114-2 MWS5114-1 2114 Ram pinout 18
Not Available

Abstract: No abstract text available
Text: Noted LIMITS CONDITIONS MWS5114-3 MWS5114-2 MAX MIN (Note 1) TYP MWS5114-1 MAX , DIP Burn-In 0°C to +70°C MWS5114E3 MWS5114E3X MWS5114E2 MWS5114E2X MWS5114E1 MWS5114E1X Ceramic DIP Burn-In 0°C to +70°C MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D2X , CHARACTERISTIC SYMBOL (Note 1) MIN (Note 2) TYP MWS5114-1 MWS5114-2 MAX (Note 1) MIN , IDD 2 - - 25 50 HA MWS5114-2 2 - - 25 50 |iA MWS5114-1 2


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PDF MWS5114 1024-Word MWS5114-2 MWS5114-1 MWS5114-3
Not Available

Abstract: No abstract text available
Text: Vo (V) MW S5114-2 (NOTE 1) TYP MAX 75 5 MIN 100 - MWS5114-1 (NOTE 1 , ; cycle tim e = 1ns. 4. All outputs in parallel. 6-163 MWS5114-1 (NOTE 1) TYP MAX Â , Load LIMITS MW S5114-3 PARAMETER SYMBOL (NOTE 1) MIN MW S5114-2 MWS5114-1 (NOTE , 50 HA MWS5114-1 2 - - 60 125 HA tCDR - 5 300 - - ns , MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features


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PDF MWS5114 1024-Word S5114 S5114-2 MWS5114-1 S5114-3
1997 - 2114 Ram pinout 18

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 6164 memory MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Text: CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V) VDD (V) MIN , ) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER SYMBOL VO (V) VIN (V , MWS5114E2X MWS5114E1 0oC to +70oC MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 0oC to +70oC , ) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX , 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 125 µA


Original
PDF MWS5114 1024-Word MWS5114 MWS5114-2 MWS5114-1 MWS5114-3 2114 Ram pinout 18 MWS5114D1 MWS5114D2 MWS5114D3 6164 memory MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
2001 - VDR 20-100

Abstract: MWS5114E3 MWS5114E2X MWS5114E2 MWS5114E1 MWS5114D3X MWS5114D3 MWS5114D2 MWS5114D1 MWS5114
Text: Noted CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V , as Noted (Continued) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER , PARAMETER SYMBOL (NOTE 1) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN , - 25 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 , PACKAGE PKG. NO. MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 0oC to +70oC PDIP Burn-In


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PDF MWS5114 1024-Word 200ns 250ns 300ns MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 MWS5114D3 VDR 20-100 MWS5114E3 MWS5114E2X MWS5114E2 MWS5114E1 MWS5114D3X MWS5114D3 MWS5114D2 MWS5114D1 MWS5114
memory ic 2114

Abstract: 5114E
Text: NDITIONS MW S5114-3 Vo (V) V|N (V) o, 5 Vdd (V) 5 (NOTE 1) TYP 75 MW S5114-2 (NOTE 1) TYP 75 MWS5114-1 , (V) 0, 5 VDD (V) 5 (NOTE 1) TYP ±0.5 MW S5114-2 (NOTE 1) TYP ±0.5 MWS5114-1 (NOTE 1) TYP ±0.5 C , ) TYP MW S5114-2 (NOTE 1) MIN (NOTE 2) TYP MWS5114-1 (NOTE 1) MIN (NOTE 2) TYP PARAMETER SYMBOL , ® HARRIS S E M I C O N D U C T O R MWS5114 1024-Word x 4-Bit LSI Static RAM Description , MWS5114E1 TEM PER A TU R E RANGE 0 °C to +70°C PACKAGE PDIP Burn-In SBDIP Burn-In PKG. NO. E18.3 E18.3 D18


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PDF MWS5114 1024-Word S5114 S5114-3 S5114-2 S5114-1 memory ic 2114 5114E
Not Available

Abstract: No abstract text available
Text: MAX 75 100 Quiescent Device Current MWS5114-1 MWS5114-2 MWS5114-3 100 MAX , MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 D18.3 D18.3 Pinout MWS5114 (PDIP, SBDIP) TOP VIEW , Noted (Continued) LIMITS CONDITIONS MWS5114-2 MWS5114-3 PARAMETER SYMBOL v0 (V) V , MWS5114-3 PARAMETER SYMBOL (NOTE 1) MIN MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN , Data Retention Quiescent MWS5114-3 Cu" tì' 1 1 MWS5114-2 2 - - 25 50 HA


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PDF MWS5114 1024-Word S5114 MWS5114-3 MWS5114-2 MWS5114-1
Not Available

Abstract: No abstract text available
Text: CONDITIONS MWS5114-3 MWS5114-2 MWS5114-1 Quiescent Device Current IDD - VIN (V) 0,5 , 50pF and 1 t t l Load D LIMITS MWS5114-2 MWS5114-3 CHARACTERISTIC SYMBOL (Note 1) MIN , V IDD 2 - - 25 50 ma 2 - - 25 50 HA MWS5114-2 MWS5114-1 , MWS5114E2X Ceramic DIP Burn-in 0°C to +70°C MWS5114D3 MWS5114D3X MWS5114D2 MWS5U4D2X 300ns MWS5114E1 MWS5114E1X MWS5114D1 MWS5114D1X Pinout 18 LEAD DIP TOP VIEW [7 A6


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PDF M302571 MWS5114 1024-Word MWS5114 MWS5114-3 MWS5114-2 MWS5114-1
Not Available

Abstract: No abstract text available
Text: Random-Access Memories (RAMs) MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A , . The MWS5114 is supplied in 18-lead, hermetic, dual-in-line side-brazed ceram ic packages (D suffix , FUNCTION Not Selected 1 Fig. 1 — Functional block diagram for MWS5114 File Num ber 13 25 698 Random-Access Memories (RAMs) MWS5114 MAXIMUM RATINGS, A bsolute-M axim um Values: DC , ; cycle time = 1 ps. 'A ll outputs in parallel. Random-Access Memories (RAMs) MWS5114 DYNAM IC


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PDF MWS5114 1024-Word 30982R 92CS-3III4R2
TC5513APL-20

Abstract: TC5514P Srm2114 TC5513AP-20 MSM5114-2RS tc5513apl LH5114-6 TC5514P-1 P4C148-15 P4C148-25
Text: 0.1/- 0.8 2.4 7. 5 0. 4/2 4. f/0. 4 15 MWS5114-2 g. e. 0—70 200 200 50 125 150 75 30 50 50 4


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PDF 024X4) LH5114-6 m5891p-30 m5891p-45 tc5513apl-20 tc5514ap/j tc5514ap/d-2 tc5514ap/d-3 tc5514p-1 TC5514P-2 TC5514P Srm2114 TC5513AP-20 MSM5114-2RS tc5513apl P4C148-15 P4C148-25
TC5513APL-20

Abstract: TC5514P srm2114 TC5513AP-20 SRM2114C HM6147 TC5513APL20 CY7C147-25 CY7C147-35 CY7C147-45
Text: 200 75 30 50 50 4.5—6. 5 8 0.1/- 0.8 2.4 7. 5 0. 4/2 4. f/0. 4 15 MWS5114-2 g. e. 0—70 200 200


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PDF CY7C147-25 CY7C147-35 CY7C147-45 HM6147 tc5513apl-20 tc5514ap/j tc5514ap/d-2 tc5514ap/d-3 tc5514p-1 TC5514P-2 TC5514P srm2114 TC5513AP-20 SRM2114C TC5513APL20
CDP18S601

Abstract: CDP1802CD CDP1802CE RCA cosmac 1802 CDP18S012 MPM-206 CD4061 CDP1802D CDP18S675 im6508
Text: CDP18S837 MWS5101 MWS5114 362 364 PD17A PD21 366 Description Floating-Point Arithmetic , CDP1821 CDP1822 CDP1823 CDP1824 MWS5114 1024 x 1 256 x 4 1 2 8 x8 32 x 8 1024 x 4 53 58 64 , RAM’s MWS5101 256 x 4 MWS5114 1024x4 241 247 CD4000-Series RAM’s CD4036A 4 x 8 NDRO , CDP1832 CDP1831 CDP1832 Motorola Harris 1024 x 4 RAM CDP1822* MWS5101* MWS5114 CPU 32 , CDP1821* CDP1822* MWS5101* CDP1822 CDP1822 CDP1822 CDP1822* MWS5101* MWS5114 256 x 4 RAM


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PDF 132nd CDP18S601 CDP1802CD CDP1802CE RCA cosmac 1802 CDP18S012 MPM-206 CD4061 CDP1802D CDP18S675 im6508
M5L8042

Abstract: panasonic inverter dv 707 manual ccd camera mc 7218 wiring diagram panasonic inverter manual dv 707 tda 12011 pin details tmm2114 tda 12011 Toshiba DC MOTOR DGM 3520 2A sn29764 MC74HC4538
Text: No file text available


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PDF S-17103 54070Z CH-5404 M5L8042 panasonic inverter dv 707 manual ccd camera mc 7218 wiring diagram panasonic inverter manual dv 707 tda 12011 pin details tmm2114 tda 12011 Toshiba DC MOTOR DGM 3520 2A sn29764 MC74HC4538
billion transformer e 3103 308 30631

Abstract: 74ls219 HD46505 -250/billion transformer e 3103 308 30631 SW02F motorola mda 962-2 SAA6000 billion transformer e 3140 118 32432 54LS323 FZK105
Text: No file text available


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PDF S2000, K25582 CH-5404 54070Z billion transformer e 3103 308 30631 74ls219 HD46505 -250/billion transformer e 3103 308 30631 SW02F motorola mda 962-2 SAA6000 billion transformer e 3140 118 32432 54LS323 FZK105
equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 7028 SMD Transistor HCF4018be 6120* harris Harris Application Note 9415
Text: No file text available


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PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 7028 SMD Transistor HCF4018be 6120* harris Harris Application Note 9415
EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 TRIAC BCR 10km FEB3T 2N8491 smd transistor marking 352a FTG 1087 S sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: No file text available


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PDF
SIECOR Fiber Optic cable 1995

Abstract: hitachi l23 reed relay SN75512 abb inverter manual acs 800 30F132 ABB inverter motor fault code inverter ABB ACS 300 irf 1507 data sheet TMS7020 29f1615
Text: No file text available


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PDF
0608, motherboard 845 GV ML

Abstract: 240V AC/TRANSFORMER bck 2801 SN75512 SN7401 ABB inverter motor fault code abb inverter manual acs 800 D64dS ABB inverter motor fault code ACS 401 vlt 2900 TL507
Text: No file text available


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PDF
stepping motor EPSON EM - 234

Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 Alternative transistor k 3728 plc wiring diagram for dg synchronisation
Text: No file text available


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PDF RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 Alternative transistor k 3728 plc wiring diagram for dg synchronisation
thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D Rapa relay 12vdc Sprague 195P triac tag 8948 sprague 926c Mascot 719
Text: No file text available


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PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D Rapa relay 12vdc Sprague 195P triac tag 8948 sprague 926c Mascot 719
TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 TAA2761 cm2716 transistor GDV 65A pbd352303 Burr-Brown instrumentation amplifier 1507 intern ULN2401
Text: No file text available


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PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 TAA2761 cm2716 transistor GDV 65A pbd352303 Burr-Brown instrumentation amplifier 1507 intern ULN2401
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