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MWI450-12E9 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
MWI450-12E9 MWI450-12E9 ECAD Model IXYS TRANS IGBT MODULE N-CH 1200V 640A Original PDF
MWI450-12E9 MWI450-12E9 ECAD Model IXYS IGBTs - Modules, Discrete Semiconductor Products, MOD IGBT SIXPACK E+ Original PDF

MWI450-12E9 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - E72873

Abstract: MWI450-12E9
Text: MWI450-12E9 1 10 100 t [ms] 1000 10000 Fig. 12 Typ. transient thermal impedance


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PDF E72873 MWI450-12E9 20100401a E72873 MWI450-12E9
2007 - MWI450-12E9

Abstract: No abstract text available
Text: [K/W] 55 50 Qrr [nC] single pulse IGBT 0.04 0.02 45 40 0.00 MWI450-12E9 5


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PDF MWI450-12E9 MWI450-12E9
2010 - Not Available

Abstract: No abstract text available
Text: 10 Erec(off) 5 1000 2000 di/dt [A/µs] 3000 4000 40 0.00 MWI450-12E9 1


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PDF E72873 MWI450-12E9 20100401a
2010 - Not Available

Abstract: No abstract text available
Text: right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved MWI450-12E9


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PDF MWI450-12E9 20100401a
2007 - MWI450-12E9

Abstract: E72873 IGBT 1500
Text: 0.00 MWI450-12E9 1 10 100 t [ms] 1000 10000 Fig. 12 Typ. transient thermal


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PDF E72873 MWI450-12E9 MWI450-12E9 E72873 IGBT 1500
2010 - E72873

Abstract: MWI450-12E9
Text: reserved 0.00 MWI450-12E9 1 10 100 t [ms] 1000 10000 Fig. 12 Typ. transient


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PDF E72873 MWI450-12E9 20100401a E72873 MWI450-12E9
1995 - TF-450

Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Text: Storage Temperature Range Tj:Tstg -55 to +200 °C + VJC=0.390 VJE=0.753 TF=450E-12 TR= 1.2E-9 , +200 °C + VJC=0.390 VJE=0.753 TF=450E-12 TR= 1.2E-9 * © 1995 ZETEX PLC The copyright in


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PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
02E-12

Abstract: No abstract text available
Text: LBX LCX LEX 68133 0.07e-12 0.01e-12 0.9e-9 1.2e-9 0.2e-12 0.2e-12 0.01e-12 0.3e-9 0.6e-9 0.3e-9


Original
PDF NE68133 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 02E-12
2005 - diode rj 93

Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
Text: 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Bias (V) Freq (Hz , 1.00E-02 1.00E-01 Bias (A) 0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9


Original
PDF MA4PBL027 ODS-1302 diode rj 93 ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
2009 - 40E-14

Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
Text: 1.0E-14 1.0E-14 0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 , (A) 0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Freq


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PDF MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
1997 - TF-450

Abstract: transistor BF 257 FZT1047A DSA003675 fzt10
Text: =0.1 RE=0.017 RC=0.010 CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359 VJC=0.390 VJE=0.753 TF=450E-12 TR= 1.2E-9


Original
PDF OT223 FZT1047A OT223 TF-450 transistor BF 257 FZT1047A DSA003675 fzt10
1995 - BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Text: =1.2 RE=15e-3 RB=145e-3 + RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 + MJC=0.4048 TF= 1.2e-9 TR


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PDF ZTX1147A BF 235 plc em 235 ZTX1147 ZTX1147A DSA003763
2006 - UMX5101

Abstract: No abstract text available
Text: 800 @ 7T -2.7E-11 1.2E-9 >1T to 7T -2.4E-7 <1 T Volume Susceptibility 5E-8


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PDF UMX5101 UMX5101
TF-450

Abstract: No abstract text available
Text: =0.753 TF=450E-12 TR= 1.2E-9 © 1995 ZETEX PLC The copyright in this model and the design embodied belong


OCR Scan
PDF ZTX1047A NY11725 JS70S7Ã TF-450
2006 - TESLA DIODES

Abstract: PIN DIODE UMX5101 magnetic diode
Text: 800 -2.7E-11 1.2E-9 >1T to 7T pH 5E-8 @ 7T -2.4E-7 1.0E-5 J/T 3 m /kg


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PDF UMX5101 UMX5101 TESLA DIODES PIN DIODE magnetic diode
Not Available

Abstract: No abstract text available
Text: -3 + RC=13e-3CJE=560e-12 + CJC=255e-12 VJC =0.6288 + MJC =0.4048 TF= 1.2e-9 TR=13e-9 Â


OCR Scan
PDF OT223 can00VAFM 59IKF 6e-14NC 90VAR RBM45e-3 13e-3CJE 560e-12 255e-12 13e-9
35GHz

Abstract: No abstract text available
Text: 0.75 A Pdiss = 6 W TCH (oC) 143 RTJC (qC/W) 12.2 TM (HRS) 1.2E+9 Note: Package backside SnPb


Original
PDF TGA2925-SG 29dBm TGA2925-SG 35GHz
2001 - diode kv 1236

Abstract: marking c7 sot-23-5 2SC4431 c5 mark sot 8e9 marking
Text: Icc Off vs Ta Vout = 2V 70E-6 13E-9 12E-9 65E-6 11E-9 10E-9 Typical Vref vs Ta Vcc = 2V Iref vs


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PDF SC4431 SC431L SC4431 OT-23- ECN00 diode kv 1236 marking c7 sot-23-5 2SC4431 c5 mark sot 8e9 marking
2007 - MWI300-12E9

Abstract: No abstract text available
Text: : 18 : 24 : 18 12 Erec(off) MWI300- 12E9 1000 2000 di/dt [A/µs] 3000 4000 1


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PDF MWI300-12E9 MWI300-12E9
Not Available

Abstract: No abstract text available
Text: 0.75 A Pdiss = 6 W TCH (oC) 143 RTJC (qC/W) 12.2 TM (HRS) 1.2E+9 Note: Package backside SnPb


Original
PDF TGA2925-SG 29dBm TGA2925-SG
1999 - 76419D

Abstract: 251AA AN7254 AN9321 AN9322 HUF76419D3 HUF76419D3S HUF76419D3ST TB334
Text: DRAIN 2 5 10 RSLC1 51 RLDRAIN RDBREAK RSLC2 c.ca n12 n8 = 1.2e-9 c.cb n15 n14 = 1.2e-9 c.cin n6 n8 = 8.49e-10 72 ISCL EVTHRES + 19 8 + LGATE i.it n8 n17 = 1 GATE 1


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PDF HUF76419D3, HUF76419D3S O-251AA O-252AA HUF76419D3 76419D 251AA AN7254 AN9321 AN9322 HUF76419D3 HUF76419D3S HUF76419D3ST TB334
2008 - 65e9

Abstract: No abstract text available
Text: =7E-12 IKF=10 N=1.01 RS=2.5e-3 TRS1=8e-4 TRS2=2e-7 + CJO= 1.2e-9 M=0.57 TT=1e-15 XTI=1.2) .MODEL DbreakMOD D , =2e-7,cjo= 1.2e-9 ,m=0.57,tt=1e-15,xti=1.2) dp.model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp.model


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PDF FDD8874 FDU8874 O-251AA) O-252 O-252) FDU8874 65e9
2002 - N307AD

Abstract: ISL9N307AD3ST
Text: ISL9N307AD3ST 2 1 3 ; CA 12 8 1.2e-9 CB 15 14 1.4e-9 CIN 6 8 2.8e-9 rev May 2001 LDRAIN DBODY 7 5 , 1.2e-9 c.cb n15 n14 = 1.4e-9 c.cin n6 n8 = 2.8e-9 RLSOURCE RBREAK 15 17 18 RVTEMP


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PDF ISL9N307AD3ST 3000pF O-252 N307AD ISL9N307AD3ST
2002 - FDD10AN06A0

Abstract: 42e8
Text: Ldrain 2 5 1.0e-9 Lsource 3 7 1.2e-9 LSOURCE CIN 8 7 SOURCE 3 RSOURCE RLSOURCE , n17 = 1 S1A 12 l.lgate n1 n9 = 3.2e-9 l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 1.2e-9 S2A


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PDF FDD10AN06A0 O-252AA FDD10AN06A0 42e8
2012 - FDD10AN06A0

Abstract: No abstract text available
Text: 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 3.2e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.2e-9 RLgate 1 9 , 1.2e-9 res.rlgate n1 n9 = 32 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 12 m.mmed n16 n6 n8 n8 =


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PDF FDD10AN06A0 O-252AA
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