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EBVW012A7B1Z<641-PHZ ABB Critical Power EBVW012A7B Series DC-DC Converter Power Module, 34 - 75Vdc Input, 12.0 Vdc Output and 12.7A Output Current
EBVW012A7B ABB Critical Power High Power Barracuda, PMBus equipped DC-DC bus converters, 48V (36V-75V), 12V, 12.7A, 0.95

MWI15-12A7 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
MWI15-12A7 MWI15-12A7 ECAD Model IXYS 1200V IGBT module Original PDF
MWI15-12A7 MWI15-12A7 ECAD Model IXYS IGBTs - Modules, Discrete Semiconductor Products, MOD IGBT SIXPACK RBSOA 1200V E2 Original PDF

MWI15-12A7 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - MWI15-12A7

Abstract: IXYS MWI15-12A7 E72873 1327 Servo MWI 15-12A7
Text: MWI 15-12A7 IGBT Module Sixpack IC25 = 30A =1200V VCES VCE(sat) typ.= 2.0V Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI15-12A7 13 1 5 9 2 6 10 16 15 14 E72873 Pin configuration see outlines. 3 7 11 4 8 12 17 Features: Application: Package: ·NPT IGBT technology ·low saturation voltage , Name Standard MWI 15-12A7 Marking on Product Delivering Mode Base Qty Ordering Code MWI15-12A7


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PDF 15-12A7 MWI15-12A7 E72873 20080805a MWI15-12A7 IXYS MWI15-12A7 E72873 1327 Servo MWI 15-12A7
2008 - 25-12A7

Abstract: 25-12A7T E72873 MWI25-12A7 MWI25-12A7T IXYS MWI15-12A7 MWI15-12A7T
Text: 15-12A7 MWI15-12A7 Box 10 482730 Standard MWI 15-12A7T MWI15-12A7T Box 10 , MWI 25-12A7(T) IGBT Module Sixpack IC25 = 50A =1200V VCES VCE(sat) typ.= 2.2V Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25- 12A7 MWI25-12A7T 13 T version 1 5 9 T 2 6 10 16 15 14 E72873 Pin configuration see outlines. T 3 7 11 4 8 12 17 Features: Application: Package: ·NPT IGBT technology


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PDF 25-12A7 MWI25-12A7 MWI25-12A7T E72873 20080805a 25-12A7T E72873 MWI25-12A7 MWI25-12A7T IXYS MWI15-12A7 MWI15-12A7T
2008 - Not Available

Abstract: No abstract text available
Text: MWI 15-12A7 IC25 = 30 A VCES = 1200 V VCE(sat) typ. = 2.0 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI15-12A7 13 1 5 9 2 6 10 16 15 14 E72873 Pin configuration see outlines. 3 7 11 4 8 12 17 Features: Application: Package: •฀NPT฀IGBT฀technology , Base Qty Ordering Code MWI15-12A7 IXYS reserves the right to change limits, test conditions and


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PDF 15-12A7 MWI15-12A7 E72873 20080805a
2008 - Not Available

Abstract: No abstract text available
Text: Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 15-12A7 MWI15-12A7 Box 10 482730 Standard MWI 15-12A7T MWI15-12A7T Box 10 480819 IXYS reserves the , MWI 25-12A7(T) IC25 = 50 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25- 12A7 MWI25-12A7T 13 T version 1 5 9 T 2 6 10 16 15 14 E72873 Pin configuration see outlines. T


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PDF 25-12A7 MWI25-12A7 MWI25-12A7T E72873 20080805a
ixan0002

Abstract: 0002 ixan0002 2 ixan0002 4 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS VERIDUL M power factor correction boost topology veridul Single phase power factor correction dc-dc power converter IGBT 10kW
Text: application will decide which solution to prefer. MWI75-06A7 MWI100-06A8 MWI150-06A8 MWI200-06A8 MWI15-12A7 MWI25- 12A7 MWI35- 12A7 MWI50- 12A7 MWI75-12A8 MWI100-12A8 600V 600V 600V 600V 1200V 1200V


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PDF IXAN0002 U-159, IXYSVUM25-E ixan0002 0002 ixan0002 2 ixan0002 4 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS VERIDUL M power factor correction boost topology veridul Single phase power factor correction dc-dc power converter IGBT 10kW
2007 - E72873

Abstract: No abstract text available
Text: No file text available


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PDF 15-12A6K MWI15-12A6K E72873 20071113a E72873
2000 - MWI1512A7

Abstract: No abstract text available
Text: No file text available


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PDF MWI1512A7 MWI1512A7
2007 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 15-12A6K MWI15-12A6K E72873 20071113a
2014 - Not Available

Abstract: No abstract text available
Text: Vin (V) Pin 6 Tu (°C) Min. Typ. Max. 12±7 /5 12±7 /5 12±7 /5 12±7 /5 12±7 /5 12 12±7 /5 L H - 0 ~ +50 0 ~ +50 0 ~ +50 0 ~ +50 0 ~ +50 0 ~ +50 0 ~ +50 4.4 4.4


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PDF PS-INVC818
2007 - 1327 AA Motor

Abstract: No abstract text available
Text: No file text available


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PDF E72873 MWI1512A7 20070912a 1327 AA Motor
1B36

Abstract: No abstract text available
Text: ACD>1C731AF!>1(*(/> 12A+7 >1/@1 ACD>1C731AF!>1(B()> 12A+7 >1/@1 238C86A7>1;C4>1(B()>1/@>1/(61 , /21 54>1;C4>1(B()>1/6>132(@>1Q/21 ACD>1C731AF!>1(*(/> 12A+7 >1/@1 ACD>1C731AF!>1(B()> 12A+7 >1/@1 238C86A7>1;C4>1(B()>1/@>1/(61 238C86A7>1;C4>1((>1/@>1/(61 238C86A7>1;C4>1(B()>1/@>1 , 54>1;C4>1(B()>1/6>132(@>1Q/21 54>1;C4>1(B()>1/6>132(@>1Q/21 ACD>1C731AF!>1(*(/> 12A+7 >1/@1 ACD>1C731AF!>1(B()> 12A+7 >1/@1 238C86A7>1;C4>1(B()>1/@>1/(61 238C86A7>1;C4>1((>1/@>1/(61


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PDF 123245672859ABC5DE2F 9ABCD31EF 5CF111 AC831 44D816AD65 1111ED 11111111111111111D D3881" A381FA61 C6D81A71C 1B36
600v 20 amp mosfet

Abstract: Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE DSEI30-10A IXDI404PI-ND IXCP10M45S 14 Amp Low-Side Ultrafast MOSFET Driver 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A
Text: IC25 = 20A MUBW10- 12A7 -ND 76.95 VCE(sat) = 2.3V VCES = 1200V IC25 = 50A MUBW25- 12A7 -ND 111.99 VCE(sat) = 2.2V VF V Digi-Key Part No. 88.98 71.18 MUBW10-06A7 64.13 51.30 MUBW10- 12A7 93.33 74.70 MUBW25- 12A7 Fig. VRRM V 3 45 16 160 0.57 DSS16-0045A-ND 2.01


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PDF O-240AA O-220AC O-247AD O-227B DSEI20-12A-ND DSEI8-06A DSEI12-06A DSEI12-10A DSEI12-12A 600v 20 amp mosfet Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE DSEI30-10A IXDI404PI-ND IXCP10M45S 14 Amp Low-Side Ultrafast MOSFET Driver 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A
Scans-0017261

Abstract: No abstract text available
Text: Sylvanio TYPE 12A7 REDRESSEUR ET PENTODE CARACTERISTIQUES n_- Tension de chauffage CA ou CC . Courant de chauffage. Ampoule . Culot . Position de montage . Conditions de fonctionnement et caractéristiques SECTION REDRESSEUSE Tension de chauffage . .» . . Tension alternative efficace par plaque . Courant , ohms 975 jumhos îoo" 13,500 ohms 0,55 watt APPLICATION Le tube Sylvania 12A7 est constitué par


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PDF ST-12C Scans-0017261
diode 12A3

Abstract: No abstract text available
Text: /DI.-06P1 MID/MDL.-12A3/A4 VIDA/DI.-12P1 VWI.-06P1 MWI.-06A7 VWI.-12P1 MWI.- 12A7 MWL.-12E7 MWI.-12E8 MUBW.-06A6 MUBW.-06A7 MUBW.-12A6 MUBW.- 12A7 MUBW.-12E7 MUBW.-12E8 7


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PDF -12D1 -12D1 -06P1 -12P1 -03G4 -03S4 -12A3/A4 diode 12A3
2000 - diode T 3512

Abstract: high voltage diode 3512 MWI35-12A7 NTC 2500 35-12A7
Text: IRM 5 0 TJ = 125°C VR = 600V IF = 35A MWI35- 12A7 0 0 20 40 60 80 100 120 , © 2000 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MWI35- 12A7 0.01 0.1 s 1


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PDF MWI35-12A7 diode T 3512 high voltage diode 3512 MWI35-12A7 NTC 2500 35-12A7
2007 - Not Available

Abstract: No abstract text available
Text: MWI50- 12A7 0 0 50 100 150 200 250 nC QG Fig. 5 Typ. turn on gate charge IXYS , single pulse 0.00001 0.00001 0.0001 MWI50- 12A7 0.001 0.01 0.1 s 1 t Fig. 12


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PDF E72873 MWI50-12A7 20070912a
2007 - E72873

Abstract: MWI50-12A7
Text: IRM MWI50- 12A7 0 0 50 100 150 200 250 nC QG Fig. 5 Typ. turn on gate charge , pulse 0.00001 0.00001 0.0001 MWI50- 12A7 0.001 0.01 0.1 s 1 t Fig. 12 Typ


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PDF E72873 MWI50-12A7 20070912a E72873 MWI50-12A7
2007 - A70TJ

Abstract: MWI35-12A7 A780A E72873 FREE WHEELING DIODE 600v 30 kHz IGBT 1212MJ
Text: IRM 5 0 TJ = 125°C VR = 600V IF = 35A MWI35- 12A7 0 0 20 40 60 80 100 120 , 0.00001 0.0001 0.001 MWI35- 12A7 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal


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PDF E72873 MWI35-12A7 20070912a A70TJ MWI35-12A7 A780A E72873 FREE WHEELING DIODE 600v 30 kHz IGBT 1212MJ
1999 - 100-A18

Abstract: No abstract text available
Text: 250 nC 0 200 400 600 MWI50- 12A7 800 A/µs -di/dt 0 1000 Fig. 5 Typ. turn on gate charge , IGBT single pulse MWI50- 12A7 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig


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PDF MWI50-12A7 100-A18
2000 - A7t diode

Abstract: diode a7t MWI50-12A7
Text: IRM MWI50- 12A7 0 0 50 100 150 200 250 nC QG Fig. 5 Typ. turn on gate charge , area RBSOA © 2000 IXYS All rights reserved single pulse 0.00001 0.00001 0.0001 MWI50- 12A7


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PDF Max900 MWI50-12A7 A7t diode diode a7t MWI50-12A7
1999 - diode T 3512

Abstract: high voltage diode 3512
Text: 100 0 0 20 40 60 80 100 120 140 160 nC QG 0 0 200 400 MWI35- 12A7 600 800 A/µs -di/dt 0 , single pulse 0 0 200 400 600 800 1000 1200 V VCE 0.0001 0.00001 0.0001 MWI35- 12A7 0.001


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PDF MWI35-12A7 diode T 3512 high voltage diode 3512
2007 - Not Available

Abstract: No abstract text available
Text: °C VR = 600V IF = 35A MWI35- 12A7 0 0 20 40 60 80 100 120 140 160 nC QG Fig. 5 , 0.00001 0.0001 0.001 MWI35- 12A7 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal


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PDF E72873 MWI35-12A7 20070912a
2003 - MWI50-12A7

Abstract: No abstract text available
Text: 600V IF = 50A 5 IRM 100 0 0 50 100 150 200 QG 0 MWI50- 12A7 250 nC 0 200 , diode IGBT single pulse MWI50- 12A7 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1


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PDF MWI50-12A7 MWI50-12A7
tube 12a7

Abstract: Scans-0017261
Text: I2A7 TUNG-SOL - 3h I 165 RECTIFIER PENTODE POWER AMPLIFIER UN I POTENTIAL CATHODES HEATER 12.6 VOLTS 0.3 AMPERE AC OR DC GLASS BIJLB B OT T OM VIEW SMALL 7 PIN BASE THE TUNG-SOL 12A7 COMBINES A HALF-WAVE RECTIFIER AND OUTPUT POWER AMPLIFIER IN A SINGLE BULB. IT IS DESIGNED FOR SERVICE IN AC - DC RtC.E I VERS. OPERATING CONDITIONS AND CHARACTERISTICS PENTODE UNIT - CLASS Ai AMPLIFIER PLATE VOLTAGE 135 VOLTS SCREEN VOLTAGE 135 VOLTS CONTROL GRID VOLTAGE -13.5 VOLTS PLATE CURRENT 9.0


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PDF
GN 139

Abstract: TI046 82430 HX D28A12 CELP2X80 Intel 82430
Text: ] 5 ns (66MHz*) AS7MC30B3256-7 AS7MC30BE3 2 56-7 AS7MC30B3512-7 AS7MC30BE3 512-7 AS7MC30B3 S 12A-7 AS7MC30BE3 5 12A-7 Part numbering system AS7M SRAM module C30 COASt compatible XX B = pipelined burst. BE


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PDF 64-bit AS7MC30B3256-6 AS7MC30BE3256-6 AS7MC30B35 12KByte AS7MC30BE35 AS7MC30BE35 66MHz* AS7MC30B3256-7 GN 139 TI046 82430 HX D28A12 CELP2X80 Intel 82430
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