The Datasheet Archive

MTP8P10 datasheet (8)

Part Manufacturer Description Type PDF
MTP8P10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
MTP8P10 Motorola Switchmode Datasheet Scan PDF
MTP8P10 Motorola European Master Selection Guide 1986 Scan PDF
MTP8P10 Motorola POWER FIELD EFFECT TRANSISTOR Scan PDF
MTP8P10 Motorola P-channel TMOS power FET. 100 V, 8 A, Rds(on) 0.4 Ohm. Scan PDF
MTP8P10 Others Shortform Datasheet & Cross References Data Scan PDF
MTP8P10 Others Semiconductor Master Cross Reference Guide Scan PDF
MTP8P10 Others FET Data Book Scan PDF

MTP8P10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: MTM8P20 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 M TP12P10 M TP12P10 MTP8P10 MTP8P10 , MTM5N40 M TM8N20 M TM8N20 M TM12P10 M TM12P10 MTP8P20 M TP12N10EL M TP12N10EL MTP8P10 M TP12P10 MTP15N05E , TP5N08L M TP5N08L MTP4N40E M TP50N06E MTP6N20E M TP4N50E M TP4N50E MTP8P10 MTP8P10 MTP10N40E MTP8N20 MTP8N20 MTP12P10 MTP8P10 MTD2955 MTD2955 MTM8P20 MTM8P20 MTM8N60 MTM12P06 MTM24N50E MTM20P10 MTM24N40E


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
MTP8P10

Abstract: AN569 relay 9v 100 ohm 008I0
Text: €¢ Source-to-Drain Diode Characterized for Use With Inductive Loads TT TMOS MTP8P10 TMOS POWER FET 8 AMPERES RDS , ?254 □□cifl710 Ô25 «IIOTb MTP8P10 ELECTRICAL CHARACTERISTICS (Tq = 25°C unless otherwise noted , MTP8P10 b3b?S5M DDTfl?!! 7bcJ ■MOTb TYPICAL ELECTRICAL CHARACTERISTICS 1 5V 9V Tj - 2S , Temperature 200 MOTOROLA TMOS POWER MOSFET DATA 3-317 MOTOROLA SC f/STRS/R F) bflE » ■MTP8P10 b3L , 3-318 MOTOROLA SC (X5TRS/R F) bôE P ■b3b7254 0010713 531 ■PIOTb MTP8P10 o 10 0 -10 -20 VGS


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PDF b3b7254 MTP8P10 MTP8P10 AN569 relay 9v 100 ohm 008I0
1995 - MR918

Abstract: PK MUR1100 MJ16006A AM503 MUR105 MTP8P10 MTP12N10 mur8100 p6302 IC 7403
Text: VCC = 20 Volts +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 , tr H.P. 214 OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 , Figure 16. Power Derating VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T. MPF930 RB2 MUR105


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PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 PK MUR1100 MJ16006A AM503 MUR105 MTP8P10 MTP12N10 mur8100 p6302 IC 7403
2001 - mjw16010a

Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
Text: mH RB2 = VCC = 20 Volts IC(pk) = 100 mA +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 RB1 MPF930 +10 RB2 MUR105 50 MJE210 1 µF 150 Voff *Tektronix AM503 , RB1 RB2 MUR105 50 11 V MTP8P10 MTP8P10 *IC *IB RB = 8.5 ts and tf , MJW16010A VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10


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PDF MJW16010A* r14525 MJW16010A/D mjw16010a PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
MTP8p10

Abstract: No abstract text available
Text: TO R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8P10 P o w er Field E , I O Ô25 MOTb MTP8P10 ELECTRICAL C H A R A C TE R IS TIC S ITC = 25°C unless otherwise , MOTOROLA TMOS POWER MOSFET DATA 3-316 MO TO RO LA S: (XSTRS R F> bôE D MTP8P10 MOTb TYPICAL , 00^0715 bTS M O T b MTP8P10 SAFE OPERATING AREA INFORMATION 30 20 100 pis _ 20 I j 2 , 531 MOTb MTP8P10 C, CAPACITANCE |pF| VGS_- J_ ^ VD S GATE-TO-SOURCE OR DRAIN


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PDF MTP8P10 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02 314B03 O-220) MTP8p10
1996 - MR918

Abstract: MTP8P10 Motorola mr918 MJH16006A MPF930 MJE210 AM503 MUR105 P6302 MTP12N10
Text: +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 *IC *IB , µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T


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PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MTP8P10 Motorola mr918 MJH16006A MPF930 MJE210 AM503 MUR105 P6302 MTP12N10
8P08

Abstract: mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
Text: 275 °C MTM8P08 MTM8P10 MTP8P08 MTP8P10 TMOS POWER FETs 8 AMPERES 'DS(on) = 0.4 OHM 80 and 100 VOLTS GO- MTM8P08 MTM8P10 CASE 1-04 TO-204AA MTP8P08 MTP8P10 CASE 221A-04 TO-220AB Designer's Data , Drain-Source Breakdown Voltage (VQS = 0, ID = 0.25 mA) MTM/MTP8P08 MTM/ MTP8P10 V(BR)DSS 80 100 - Vdc Zero


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PDF 21A-04 O-220AB 8P08 mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
1995 - MTP12N10 pin configuration

Abstract: PD-135 MTP8P10 MTP12N10 PK MUR1100 MPF930 MJE210 AM503 mjw16010a driver transistor hfe 60
Text: +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 MUR105 , MTP8P10 MTP8P10 *IC *IB T.U.T. RB = 8.5 RL 50 V(off) adjusted to give specified , . Power Derating VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10


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PDF MJW16010A/D MJW16010A* 90nufacture MJW16010A/D* MTP12N10 pin configuration PD-135 MTP8P10 MTP12N10 PK MUR1100 MPF930 MJE210 AM503 mjw16010a driver transistor hfe 60
1996 - AM503

Abstract: P6302 MUR105 MTP8P10 MTP12N10 MR918 MPF930 MJH16006A MJE210 MTP12N10 pin configuration
Text: +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 *IC *IB , µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T


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PDF MJH16006A/D MJH16006A MJH16006A/D* AM503 P6302 MUR105 MTP8P10 MTP12N10 MR918 MPF930 MJH16006A MJE210 MTP12N10 pin configuration
2001 - MR918

Abstract: tektronix 475 MJ16006A MJH16006A MTP12N10 MPF930 MJE210 AM503 MJh-16006A MTP8P10
Text: (sus) L = 10 mH RB2 = VCC = 20 Volts +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 , *Tektronix AM503 *P6302 or Equivalent RB2 MUR105 50 11 V MTP8P10 MTP8P10 *IC *IB , 100 µF 10 µF MTP8P10 MTP8P10 RB1 MPF930 10 mH MUR8100 MUR1100 MUR105 +10


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PDF MJH16006A r14525 MJH16006A/D MR918 tektronix 475 MJ16006A MJH16006A MTP12N10 MPF930 MJE210 AM503 MJh-16006A MTP8P10
1996 - MTP12N10 pin configuration

Abstract: MTP12N10 P6302
Text: Load Switching Drive Circuit +15 1 µF 150 100 100 µF MTP8P10 MTP8P10 RB1 A MPF930 50 MUR105 , tf 1 µF 150 100 100 µF MTP8P10 MTP8P10 RB1 A V(off) adjusted to give specified off , Figure 16. Power Derating +15 1 µF 150 100 100 µF MTP8P10 10 µF MTP8P10 RB1 MPF930 +10 MPF930 50


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PDF MJW16010A/D MJW16010A/D* MTP12N10 pin configuration MTP12N10 P6302
K 3699 transistor

Abstract: two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503
Text: ioon U J lo o u F ^ " MTP8P10 ' r 1 VCEO(sus) L - 10 mH RB2 - oo P MTP8P10 , 'in i 100fi OR EQUIV. P.G. H Rl vcc 3 100 nF r MTP8P10 ¡2 MTP8P10


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PDF MJE16106 AN875) MUR105 MUR170 UR405 MUR470 AR131) K 3699 transistor two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503
MTP8N10

Abstract: mtp12n10 mtp7n06 MTP7N15 power mosfets to 204aa MTP12P08 mtp25n10 MTP5N15 MTP3N15 MTH8P20
Text: .Î0AB 100 0.3 6 MTM12P10 12 204AA MTP12P10 220AB 0.4 4 MTM8P10 8 204AA MTP8P10 220AB 80 0.3 , MTP6N10 6 50 0.5 4 MTP8N10 8 75 0.4 MTP8P10 * IRF522 7 40 0.33 5 MTP10N10 10 75 0.30 6


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PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp12n10 mtp7n06 MTP7N15 power mosfets to 204aa MTP12P08 mtp25n10 MTP5N15 MTP3N15 MTH8P20
P6302

Abstract: transistor equivalent table TL 3849 AN952
Text: . Inductive Load Switching Drive Circuit 15 O- vCEO{tut) 1nF? 100m F? MTP8P10 L - 10 mH HP , ) MTP8P10 RB1 JX 1° JrMPF930 MPF930 :-K rB 2 VCE- RB2 " 0 Vqc - 20 Volts Rb i selected , and tf ipF; 1500 <- OR EQUIV. P.G. '"J M 100 mF t |- MTP8P10 MTP8P10 V(otf


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PDF MJW16010A* AN951) MUR105 MUR1100 MUR405 MUR4100 AR131) P6302 transistor equivalent table TL 3849 AN952
MJF16006A

Abstract: vqe 14e wMR918 MTP8P10 TCA 700 y MJF16006 P6302 MUR8100 AM503 lr 2905 transistor
Text: Circuit M5on fioon J 100'lF: -1 MTP8P10 VoffO •Tektronix AM503 P6302 or Equivalent Scope , MTP8P10 V(0ff) adjusted to give specified off drive j-jjt-10V vcc 250 v RL 50 n Ic 5 a ibi 0.66 a 'b2 1 a Rbi 20 n rb2 4il MTP8P10 VoffO A© PH—fcmï Vcc J -à Ufi - I • 11 m I , P~ MTP8P10 MUR8100 -W- 1 f-HR J-1 _^_MPF93ol FMPF930 — MTP8P10 MUR105 <10 mH MUR1100 —w


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PDF b3b75sm MJF16006A/D 33-II MJF16006A AN1040. C64449 MJF16006A vqe 14e wMR918 MTP8P10 TCA 700 y MJF16006 P6302 MUR8100 AM503 lr 2905 transistor
1995 - MTP12N10 pin configuration

Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP12N10 MJW16110 MTP25N06 pk98 power transistor vce 600 volt mur47
Text: 20 mA +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , IC 0V MUR105 250 V IC 250 Vdc RL 11 V Vin 0 MTP8P10 MTP8P10 *IC , MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870


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PDF MJ16110/D MJ16110* MJW16110 MJ16110/D* MTP12N10 pin configuration IRFD9123 MJ16110 IRFD113 equivalent MTP12N10 MJW16110 MTP25N06 pk98 power transistor vce 600 volt mur47
2001 - MJ16110

Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
Text: 150 1 µF 100 µF 100 MTP8P10 MTP8P10 RB1 MPF930 +10 RB2 MUR105 50 , MTP12N10 250 V IC RB2 MUR105 50 Vin MTP8P10 MTP8P10 *IC *IB RB = 8.5 , MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870


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PDF MJ16110 MJW16110 r14525 MJ16110/D MJ16110 MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
1995 - mje16

Abstract: two transistor flyback MR918 MTP12N10 MUR105 MTP8P10 MPF930 MJE210 AM503 mtp25n06
Text: 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 MUR105 , IC MUR105 250 V VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) Vin MTP8P10 MTP8P10 *IC , ) 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870 MUR170 MPF930 MUR105 +10


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PDF MJE16106/D MJE16106 MJE16106/D* mje16 two transistor flyback MR918 MTP12N10 MUR105 MTP8P10 MPF930 MJE210 AM503 mtp25n06
8P08

Abstract: MTP8P08 mtp8p
Text: ith In d uctive Lo ad s MTM8P08 MTM8P10 MTP8P08 MTP8P10 TM O S P O W ER FE T s 8 A M P ER ES T D , -204AA °OW R0JC r 0JA 1.67 30 62.5 275 °C MTP8P08 MTP8P10 CASE 221A-04 TO-220A8 Designer's Data for , Unit V{BR)DSS MTM/MTP8P08 MTM/ MTP8P10 >DSS ·g s s f ·g s s r 10 100 100 100 80 100 - Vdc ¿¿Ade


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PDF MTM8P08 MTM8P10 TQ-204AA 21A-04 O-220AB 8P08 MTP8P08 mtp8p
1995 - MJ11016 equivalent

Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration MJF16206 726 MOTOROLA TRANSISTORS MC1391 MJ11016 NPN 200 VOLTS 20 Amps POWER TRANSISTOR using of damper in Horizontal Output Transistor vce 1200 and 5 amps transistor
Text: . Thermal Response VCE (1000 V MAX) 10 µF MUR8100 +15 1 µF 100 µF 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T. MUR105 50 RB2 MTP12N10 , 100 MTP8P10 MTP8P10 V(off) adjusted to give specified off drive VCC Per Fig. 17 & 18


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MC1391 MJ11016 NPN 200 VOLTS 20 Amps POWER TRANSISTOR using of damper in Horizontal Output Transistor vce 1200 and 5 amps transistor
2001 - MDC1000A

Abstract: 1811P3C8 MDC1000 MJF16206 MJW16206 2N6191 MTP8P10 MUR8100E MJ11016 equivalent mtp3055
Text: (1000 V MAX) 10 µF MUR8100 +15 100 µF 150 10 mH MTP8P10 100 MTP8P10 RB1 , 150 1 µF 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give specified off drive


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PDF MJW16206 MJF16206 MJW16206 r14525 MJW16206/D MDC1000A 1811P3C8 MDC1000 2N6191 MTP8P10 MUR8100E MJ11016 equivalent mtp3055
1996 - 1811P3C8

Abstract: TO247AE MJF16206 MDC1000 120C4 MUR8100E MUR8100 MTP8P10 MR856 2n533
Text: 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 TO247AE MDC1000 120C4 MUR8100E MUR8100 MTP8P10 MR856 2n533
1996 - 2N5337

Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E
1996 - 1811P3C8

Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give


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PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E
MTP8N10

Abstract: MTP25N10 MTP20N10 mtp7n06 MTP7N15 MTP5N06 irf510 MTP5N15 MTP12N10 MTPSP10
Text: IRF510 4 3 MTP6N10 6 50 0.5 4 MTP8N10 8 75 0.4 MTP8P10 * IRF522 7 40 0.33 5 MTP10N10 10


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PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 MTP20N10 mtp7n06 MTP5N06 irf510 MTP12N10 MTPSP10
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