The Datasheet Archive

MTP6N60 datasheet (14)

Part Manufacturer Description Type PDF
MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
MTP6N60 Motorola European Master Selection Guide 1986 Scan PDF
MTP6N60 Motorola Switchmode Datasheet Scan PDF
MTP6N60 Others Shortform Datasheet & Cross References Data Scan PDF
MTP6N60 STMicroelectronics Shortform Data Book 1988 Scan PDF
MTP6N60E Motorola TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 ? Original PDF
MTP6N60E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
MTP6N60E Toshiba Power MOSFETs Cross Reference Guide Original PDF
MTP6N60E Others FET Data Book Scan PDF
MTP6N60E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 3A, Pkg Style TO220AB Scan PDF
MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original PDF
MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original PDF
MTP6N60E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original PDF

MTP6N60 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - MTP6N60

Abstract:
Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS , limited by safe operating area May 1992 1/9 MTP6N60 THERMAL DATA R thj-cas e Rthj- amb Rthj , . 2 4.8 1150 160 75 Max. Unit S 1500 240 110 pF pF pF MTP6N60 ELECTRICAL , Thermal Impedance 3/9 MTP6N60 Derating Curve Output Characteristics Transfer , 4/9 MTP6N60 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature


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PDF MTP6N60 100oC O-220 MTP6N60
1996 - MTP6N6

Abstract:
Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS s s s s s ID 600 V MTP6N60 R DS(on) < 1.2 6.8 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY , /9 MTP6N60 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance , 0 Typ. 2 4.8 1150 160 75 Max. Unit S 1500 240 110 pF pF pF MTP6N60 , Thermal Impedance 3/9 MTP6N60 Derating Curve Output Characteristics Transfer


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PDF MTP6N60 100oC O-220 MTP6N6 MTP6N60
1996 - MTP6N60

Abstract:
Text: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS s s s s s ID 600 V MTP6N60 R DS( on) < 1.2 6.8 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY , 150 o C (·) Pulse width limited by safe operating area November 1996 1/9 MTP6N60 , pF pF MTP6N60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt , safe operating area Safe Operating Area Thermal Impedance 3/9 MTP6N60 Derating Curve


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PDF MTP6N60 100oC O-220 MTP6N60 MTP6N6 12 v smps
MTP6N60

Abstract:
Text: Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS(on) *d 600 V 1.2 a 6A · HIGH VOLTAGE - 600 V FOR OFF-LINE , P.O. ^stg -6 5 to 150 150 Ti June 1988 1/5 391 MTP6N60 THERMAL DATA Rthj . case , 8SOI5iOII(l,ieiiB90ioei 392 MTP6N60 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test , characteristics SCS-THOMSON 3/5 393 MTP6N60 Transconductance Static drain-source on resistance Gate


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PDF MTP6N60 100KHz O-220 MTP6N60 MTP6N6
Not Available

Abstract:
Text: ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V MTP6N60 ■. ■. . R DS(on) Id < 1 .2 , November 1996 1/9 MTP6N60 THERMAL DATA R thj-case R thj-am b R thj-am b Ti Therm al , L L LL L L Q Q Q_ _ _ C jss Coss Param eter Forward T ransconductance MTP6N60 , +0 7 SGS-THOMSON ^ 7# RiiieR®iiLii£iîR®(iaies MTP6N60 Derating Curve Output , ®iiLii£iîR®(iaies MTP6N60 Capacitance Variations Normalized Gate Threshold Voltage vs


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PDF MTP6N60 gaTP6N60 ISOWATT22Q
TP6N60

Abstract:
Text: to 150 150 1/7 319 MTP6N60 THERMAL DATA Rthj-case Rthj-am b Rthj-am b Ti Therm al R , ® T = T= = Max Rating = Max Rating x 0.8 200 1000 n n A > > MTP6N60 ELECTRICAL , 4/7 322 ^7# £ = T SGS-THOMSON 8*oMJSEnwi*)»Bi MTP6N60 Capacitance Variations , raDCWEUWTTOSWira 323 MTP6N60 Switching Safe Operating Area 0024310 Accidental Overload Area 0024320 , 2200 M F 3 .3 J"~L 6/7 Ä 7# rZZ SCS-THOMSON MUCBBOOLBCTNOBIOCS 324 MTP6N60


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PDF TP6N60 MTP6N60 TP6N60 MTP6N6
MTP6N60

Abstract:
Text: Æ 7 SCS-THO M SO N Räö(g»[llLli(g'ir^©R5tl(gi MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E L IM IN A R Y D A TA TYPE MTP6N60 V Dss R DS(on) 1 .2 ß 600 V 6 A · HIGH , MTP6N60 THERMAL DATA R,hj . case Thermal resistance junction-case R,hj_am b Thermal resistance , 60 150 200 120 ns ns ns ns 2/5 " 7#>. 392 r= J SCS-THOMSON MTP6N60 ELECTRICAL , f Z J SCS-THOMSON 7#. 3/5 393 MTP6N60 T ransconductance Static drain-source on


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PDF MTP6N60 100KHz O-220 N4723 MTP6N60 smps circuit diagram
2000 - Not Available

Abstract:
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source , : MTP6N60 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time IS = 6.0A VGS =


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PDF MTP6N60 O-220
TP6N60

Abstract:
Text: November 1996 MTP6N60 THERMAL DATA R lh j-c a s e R lh j-a m b R th j-a m b Ti Therm al R , MTP6N60 Derating Curve Output Characteristics Ptoi(W ) 120 X 80 s . N \ N\ N V , Cross-over Time *T # KooeasiiiLiieiragH ioes /IT SGS-THOMSON 5/9 MTP6N60 Switching Sate , *T # RKRQiuieirftgHioes /IT SGS-THOMSON 7/9 MTP6N60 ISOWATT22Q MECHANIC AL DATA mm MI N


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PDF TP6N60 TP6N60 6N60
irfp 950

Abstract:
Text: 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218 , 1000 600 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO


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PDF SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 SGSP369 transistor BUZ45 BUZ74 IRF 950 SGSP239 IRFP 740
SGSP3055

Abstract:
Text: MTP5N18 MTP5N20 MTP5N35 MTP5N40 MTP6N08 MTP6N10 MTP6N60 MTP7N05 MTP7N12 MTP7N15 MTP7N18 MTP7N20 MTP8N08 , IRF620 IRF731 IRF730 SGSP311 SGSP311 MTP6N60 SGSP358 SGSP317 SGSP317 SGSP317 SGSP317 IRF520 IRF520


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 SGSP3055 IRF722P IRF732P IRF540FI irf522p IRF510 1rfp450 MTP20N10 IRF730P SGSP312
MTP2P45

Abstract:
Text: 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75 6 1 MTP2N55 2


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PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 IRF840 SELECTION GUIDE MTP8N45 MTP3N80 MTP2N85 MTH8P20 MTP1N60 Irf830 amp
Not Available

Abstract:
Text: Cx / i, LJ nc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min) Static Drain-Source On-Resistance 1 :RDS ( on)= 1.2Q (Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements " ^ ™ u ! o S{3) !; 1 2 LGate


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PDF MTP6N60 O-220C
MTP6N55

Abstract:
Text: Plastic TMOS Power MOSFETs — T0-220AB TO-220AB CASE 221A-02 ¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75


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PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP6N55 MTP2P45 IRF840 SELECTION GUIDE MTP8N45 MTP1N55 irf8408 MTP3N80
MTP3N80

Abstract:
Text: Plastic TMOS Power MOSFETs — T0-220AB TO-220AB CASE 221A-02 ¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75


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PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTP2P45 mtp2n50 mtm2n50 MTM1N100 MTM7N50 MTM6N60 MTM6N90
SGSP369

Abstract:
Text: 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218


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PDF IRF831 IRF831FI SGSP364 IRF843 IRF843FI IRF841 IRF841FI SGSP474 SGSP574 IRF453 SGSP369 TSD4M450V SGSP479 IRFP450fi IRF840FI SGSP239 sgsp579 smd hl
TSD4M450V

Abstract:
Text: 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218


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PDF IRF831 IRF831FI SGSP364 IRF843 IRF843FI IRF841 IRF841FI SGSP474 SGSP574 IRF453 TSD4M450V SGSP479 tsd4m45 SGSP239 SGSP369 IRF840FI BUZ41 STHV82 TSD4M351V
IRFP 740

Abstract:
Text: 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218


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PDF MTP3N60 MTH6N60 MTP6N60 IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 irf 840 Diodes BUZ C 840 Diodes BUZ 840 BU 102
1997 - all mosfet equivalent book

Abstract:
Text: .1 s DC .2 V 5.3mV 1 V DC 2.00mV AC 1.87 MOSFET MTP6N60 di/dt = 53 A/uS s 500 MS


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PDF 100kHz all mosfet equivalent book MOSFET FOR 100khz SWITCHING APPLICATIONS mosfet equivalent book MTP6N60 equivalent comparison of IGBT and MOSFET parallel mosfet IRG4BC30W equivalent IRG4BC30W IGBT parallel Parallel operation mosfet
IRF 850

Abstract:
Text: 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218


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PDF
1998 - ste30na50

Abstract:
Text: STP9NB60 STP7NB60 STP5NB60 9.0 STU9NA60 7.2 MTP6N60 STP6NA60 5.3 STP4NA60 MTP3N60 IRFBC30 3.600


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PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 stk2n50 ste38na50 STHV82 ste24n90 STB55N06 STB40N03L-20 STN3NE06L
IRFP 740

Abstract:
Text: 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218


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PDF IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 TSD4M250V SGSP364 sgsp369 IRF 810 220 to 110 power TSD4M351V IRFP150 SGS100MA010D1
1999 - STP3N60FI

Abstract:
Text: STU9NA60 MTP6N60 - STP6NA60 STP4NA60 MTP3N60 - STP3NA60 STP6NA80 STP5NA80 STP4NA80 -BUZ80A STP3NA80


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PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STD1NB60 STP6NA80FP IRF730 complementary ste24n90
IRF740 "direct replacement"

Abstract:
Text: MTP10N05 MTP16N05A MTP6N60 SAMSUNG Direct Re placement IRF730 IRF633 IRF633 IRF632 IRF632 IRF643 IRF542


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
mosfet cross reference

Abstract:
Text: Replacement MTP3N25E MTP60N06HD MTP36N06V MTP27N10E MMSF10N02ZR2 MMSF10N02ZR2 MTP8N50E MTP6N60E , Motorola Similar Replacement MTP50N06V MTP50N06V MTP60N06HD MTP4N80E MTP4N80E MTP8N50E MTP6N60E , MTP12P11 MTP12P12 MTP6P20E MTP6P20E MTP2955V MTP2955V MTP23P06V MTP2N60E MTP3N60E MTP6N60E , MTP6N60 NDS9400 NDS9405 NDS9410 NDS9430 NDS9435 NDS9936 NDS9947 NDS9953 NDS9955 NDS9956 , Replacement MTW20N50E MTW6N100E MTW6N100E MTW7N80E MTW7N80E MTP6N60E MMSF3P02HDR2 MMSF3P02HDR2


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