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MTD10N05E-1 datasheet (3)

Part Manufacturer Description Type PDF
MTD10N05E1 Motorola TMOS power FET. 50 V, 10 A, Rds(on) 0.1 Ohm. Scan PDF
MTD10N05E-1 Others FET Data Book Scan PDF
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Catalog Datasheet MFG & Type PDF Document Tags
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: IRFP250 IRFP251 IRFP252 IRFP253 IRFP254 IRFP255 IRFP340 IRFP341 IRFP342 IRFP343 IRFP350 S u ffix 1 o r - 1 , MTD4N20 MTD2N20 MTD4P06 MTD4P06 MTD2955 M TD2955 M TD2955 MTD3055E1 M TD5N05- 1 MTD3055E1 MTD10N05E1 MTD10N05E1 M TD5N10- 1 M TD5N10- 1 MTD9N10E1 MTD9N10E1 TMOS POWER MOSFET SELECTOR GUIDE & CROSS REFERENCE , IVN5201KNH IVN6000CNS IVN6000CNT IVN6000CNU IVN6000KNR S u ffix 1 o r - 1 in d ic a te s In s e rtio n M o u n t Motorola Direct Replacement Motorola Similar Replacement M TD2N20- 1 M TD2N20- 1 M TD4N20- 1


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
mtd10n05et

Abstract: MTD10N05E 369A-10 AN569 MOTOROLA N-Channel MOSFET
Text: in Bridge Circuits. • Available With Long Leads, Add - 1 Suffix MTD10N05E Motorola Preferred , Value Unit Drain-Source Voltage VdSS 50 Vdc Drain-Gate Voltage (Rqs = 1 mil) VdGR 50 Vdc Gate-Source , Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient ( 1 ) RftJC RflJA , °C ( 1 ) These ratings are applicable when surface mounted on the minimum pad size recommended , Voltage {Vqs = 0, Id = 0 25 mA) 1 v|br)DSS 50 — Vdc Zero Gate Voltage Drain Current |VDS = Rated VDSs


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PDF MTD10N05E mtd10n05et MTD10N05E 369A-10 AN569 MOTOROLA N-Channel MOSFET
mtd10n05e

Abstract: CASE369A
Text: S (Tc = 25°C unless otherwise noted) Rating D rain-Source Voltage Drain-Gate Voltage (Rq s = 1 M , Resistance - Ju nction to Case - Ju nction to A m b ie n t - Ju nctio n to A m b ie n t ( 1 ) Maximum Device , device is a M otorola recom m ended choice fo r fu tu re use and best overall value. REV 1 , CHARACTERISTICS D rain-Source Breakdow n Voltage {V(3S = 0, 1 d = 0.25 mA) Zero Gate Voltage Drain C urrent (V p s , ) ON CHARACTERISTICS* Gâte Threshold Voltage (V d s = V g S ' ' d = 1 T j = 100Û C ^G S (th) Vdc 2 1.5


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PDF MTD10N05E ti3b7S54 mtd10n05e CASE369A
motorola MN transistor

Abstract: FR4 dielectric constant vs temperature AR338
Text: conductivity metal substrate combined with a low thermal resistance electrical isolation layer (Figure 1 ). , approximately 0.5°C/W, which is more than we need for this application considering our application requires 1 °C/W." Figure 1 . Figure 1 . Typical Metal-Backed PC Board Construction. Lambda is one of the , (Figure 2). Len Wardzala, product engineering group leader, says the Table 1 . Thermal Performance of , the two TO-202 package linear regulators next to the transformer. Table 1 lists the temperature of the


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PDF AR338 -------AR338/D AR338/D motorola MN transistor FR4 dielectric constant vs temperature AR338
10N05E

Abstract: No abstract text available
Text: haracterized fo r Use in B ridge C ircuits. · A v a ila b le W ith Long Leads, A dd - 1 S u ffix fit B C ^B If # TMOS U nit Vdc Vdc Vdc Vpk Ade Watts W/°C °C TM O S POWER FETs 10 AMPERES RDS(on) = 0 1 O H , Junction to Case - Junction to Ambient - Junction to Ambient ( 1 ) Maximum Device Temperature for Soldering , ) ( 1 ) These ratings are applicable when surface mounted on the m inim um pad size recommended , choice for future use and best overall value. MOTOROLA TMOS POWER MOSFET DATA 3 - 1 3 0 M O TO RO


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PDF MTD10N05E 10N05E
10N05E

Abstract: No abstract text available
Text: ith Long Leads, A dd - 1 S u ffix TM O S POWER FETs 10 AMPERES rDS(on) = 0.1 OHM 50 VOLTS # C ASE 369 A -0 4 T O -2 52 M TD 10N 05E CASE 369 -0 3 TO -251 M TD 10 N 0 5E - 1 M A X IM U M RATINGS , tio n to A m b ie n t ( 1 ) M a x im u m D e vice T e m p e ra tu re f o r S o ld e rin g P u rp o s e s {fo r 5 s e c o n d s m a x im u m ) ( 1 ) The se ra tin g s are a p p lic a b le w h e n surface m o u , IS TIC S * G a te T h re s h o ld V o lta g e (V d s = V GS« 'D = 1 m A > T j = 100C C S ta tic D ra


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MBRD2060CT

Abstract: MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100
Text: 0.25 0.5 0.6 0.6 0.12 0.6 0.15 0.18 0.3 0.1 0.6 0.4 Amp» *D(cont! Amps 2 1 1 1 7 2 3 4 6 6 5 6 6 10 4 8 8 12 10 4 5 500 500 450 400 200 200 200 200 150 100 100 100 80 80 60 60 60 60 50 50 50 1 0.5 0.5 0.5 3.5 1 1.5 2 3 3 2.5 3 3 5 2 4 6 6 5 2 2.5 Rectifier D2PAKs Device VRRM Volts RAVI , Dimensions DPAK STY LE 1 PIN T BASE 2 COLLECTOR 3 EMITTER 4 COLLECTOR STY LE 2 PIN 1 GATE 2 DRAIN 3 SOURCE 4 DRAIN NOTES 1 DIMENSiONiNG AND TÛLERANC1NG PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH `


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PDF MTD2N50 MTD1N50 MTD1N45 MTD1N40 MTD7N20 MTD2N20 MTD3P20* MTD4N20 MTD6N15 MTD6N10 MBRD2060CT MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100
TB20N20E

Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
Text: d s iz e r e c o m m e n d e d In d ic a te s P -C h a n n e l " " A d d - 1 S u ffix to p a rt n u m , -252 Voss RDS(on) ® >D (Ohms) (Amps) Max 8 4 0.5 1 0.5 Device MTD1N50 MTD2N50 MTD1N45 MTD1N40 d (cont) Amps 1 2 1 Pd * (Watts) Max 1 .7 5 " (Volts) Min 60 Voss RDS(on) ® Id (O hms) (Amps , (cont) Amps 4 5 8 10 8 5 10 pd* (Watts) Max 1 .7 5 " 450 400 200 8 5 1.5 0.7 1 2 3 2 5 , - 1 S u ffix to p a rt n u m b e r to o rd e r in s e rtio n m o u n ta b le p a c k a g e * * * ' A v


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PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: -08 IRFR010 IRFR9210 IRF045 MTD5NO5- 1 IRFBE20 MTD4P05- 1 BSS88 IRFBE20-003 MTD10N05E-1 MTP1ON15L , 03334 01921 JEDEC 2N3906-STYLE 2N4917-J25Z TIP36C 2SA1186 NJD45H11- 1 BSR60 MJ6503 MPSA64 , MJ16012 MD2369A 2N37l4 BUW12A MMBC1321Q5 MRF581 TIP112 MMBR931 2N3904 LT1839- 1 MRF581 HXTR , 03334 BFQ65 02037 MJD44H11- 1 03406 D40N1 02062 HXTR-3001 03334 BFR93R 02037 2N2221A 02037 MMBR571 , VMP- 1 VCR2N J309 SD214 MFE3004 E232 VN66AFD 2N4416A 2N5268 2N5116 3N190 E107 2N5396


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PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
1993 - MTD10N05E

Abstract: 8.7V
Text: 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE (V) 6.0 LTC1157 · TA02 1 , ). 300°C U W U PACKAGE/ORDER I FOR ATIO TOP VIEW NC 1 GATE 1 2 8 NC 7 GATE 2 , 7 GATE 2 GND 3 6 VS IN1 4 LTC1157CN8 NC 1 GATE 1 2 5 IN2 S8 PART , = 3.3V, VIN1 = VIN2 = 0V (Note 1 ) VS = 3.3V, VIN = 3.3V (Note 2) VS = 5V, VIN = 5V (Note 2 , µs 10 31 60 µs 70% × VS 15% × VS ± 1 q 0V VIN VS q VS = 3V VS = 3.3V


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PDF LTC1157 LTC1157 MTD10N05E 8.7V
1998 - std2n52

Abstract: stp2na60 SSH6N80 buz102 equivalent rfp60n06 replacement for IRL2203N BUZ91 equivalent IRFP460 cross reference RFP60N06LE buz91a equivalent
Text: STP12NB30 STW15NB50 STP5NB60FP STW7NA100 STH8NA80FI (*) = package option available upon request 1 / 17 , STP7NB40FP STP4NA90FI STP5NA90(*) STB9NB60- 1 STP9NB60 IRF520 STP6NB50 STP6NB50 STP9NB50 STP9NB50 , STD2NA40- 1 STP60N0E06-16 STP80N0E06-10 STP80NE06-10 STP33N10 IRF520 IRF520FI IRF520 STP50NE08 , STP20NE06FP STP45NE06FP STP45NE06FP STD9N10- 1 STD9N10- 1 STD4NB25- 1 STD5NB20- 1 STD5NB20- 1 STD4NB25- 1 STD4NB25- 1 STD2NA40- 1 STD2NA40- 1 STD5NB40- 1 STD5NB40- 1 STD2NA40- 1 STD3NB50- 1 STD3NB50- 1 STD2NB60- 1


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 SSH6N80 buz102 equivalent rfp60n06 replacement for IRL2203N BUZ91 equivalent IRFP460 cross reference RFP60N06LE buz91a equivalent
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: 1 /11 Power MOSFETs Cross Reference INDUSTY STANDARD 2SK2116 2SK2117 2SK2118 2SK2175 , STP4NA40 STP3NA80 STP4NA80 STP4NA80FI STP3NA80FI STP4NA80 STD2NA40- 1 STP60N06-14 STP60N06 , STP8NA50FI STP8NA50FI BUZ71FI STP50N06FI STP50N06FI STD9N10- 1 STD9N10- 1 STD4N25- 1 STD5N20- 1 STD5N20- 1 STD5N20- 1 STD4N25- 1 STD4N25- 1 STD2NA40- 1 STD2NA40- 1 STD4NA40- 1 STD4NA40- 1 STD4NA40- 1 STD2NA40- 1 STD3NA50- 1 STD3NA50- 1 STD3NA50- 1 STD2NA60- 1 STP55N06 MTP3055E BUZ71 5/11 Power MOSFETs Cross


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
M1486

Abstract: L4862 ML4862CS t2b bridge rectifier s32 schottky diode
Text: f-B 1 2 3 4 5 32 31 30 29 28 27 26 25 24 23 1 1 12V O U T QZ I I I 1 1 6 ; 8 9 10 , ~l I O U T2 A O N /Ô F f 12 1 ~T~I ~~l~l I GND PW RG N D OU T2B 1 1 O U T tB 1 5VOUT 1 I s en se B I SW1 1 SW 2 SW3 Vgt I I ] 1 l O U T1A VlN ISENSEA 22 H U 21 20 19 18 17 -LJ 1 1 S O fT START 11 1 I' Q I 1 1SOUT1 1 1SO UT2 1 1SO UT3 PIN DESCRIPTION PIN# NAME FUNCTION PIN# NAME FUNCTION 1 2 Rr V adapter Timing Resistor w hich sets oscillator frequency


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PDF ML4862 L4862 1N5819 M14862 ML4862 100mA, 50jlH, 1N4148 1N5817 M1486 ML4862CS t2b bridge rectifier s32 schottky diode
MMDF4N02

Abstract: No abstract text available
Text: A TIO N ML4862 32-Pin SOIC (S32W) 1 32 V a d a p t er I I 2 31 H D VG 5 I I 3 30 ~ T 1 ON /O FF BATTERY LO W I I 4 29 ~ 7 . 1 F D B K A V bat I I 5 28 1 FDBK B I I 6 27 1 1 ENABLE A COM P B I I 7 26 1 1 O U T2A ON /Ö FF 12 I I 8 25 O U T2B I I 9 24 1 1 PW RGND O U T1B 1 1 1 1 O U T1A rt Œ I " 1 I 12V O U T V ref 1 COM P A 1 GND 10 23 5V O U T 1 1


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PDF ML4862 L4862 10OKHz L4862. 1N5817 1N5818 1N5819. ML4862 MMDF4N02
1993 - Not Available

Abstract: No abstract text available
Text: ) 6.0 LTC1157 • TA02 1 LTC1157 W W W AXI U RATI GS U ABSOLUTE Supply Voltage , sec). 300°C W U PACKAGE/ORDER I FOR ATIO NC 1 GATE 1 2 8 NC 7 GATE 2 , IN2 8 NC 7 GATE 2 GND 3 6 VS IN1 4 LTC1157CN8 NC 1 GATE 1 2 5 IN2 , Quiescent Current ON VS = 3.3V, VIN1 = VIN2 = 0V (Note 1 ) VS = 3.3V, VIN = 3.3V (Note 2) VS = 5V, VIN = , µs 10 36 60 µs 10 31 60 µs 70% × VS 15% × VS ± 1 q 0V ≤ VIN


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PDF LTC1157 LTC1157
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: STS5DNE30L STS8NF30L /S AM SU N G STS6DNF30L STB11NB40 STB9NB60- 1 STB16NB25 STB19NB20 , STD16NE10 STD16NE06 - STD20NE06 1 /S AM SU N G STW8NB90 STH13NB60FI STH15NB50FI STH18NB40FI , P/N ST Nearest Preferred STD2NB25- 1 Supplier FAIRCHILD / SAMSUNG STS8NF30L , STP5NC60FP STP5NC60FP STP5NC60FP STP60NE06-16 STD2NB60- 1 STD2NB60- 1 STD12NF06L- 1 STP4NB80 STW50NB20 , STD3NB30 STD5NB20- 1 STD2HNC60 Supplier FAIRCHILD / INTERSIL STS3DNF30L STS5DNE30L STS3DPF30L


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
Text: MOTOROLA SC XSTRS/R F IME D | b3b?2S4 Q0fl^3n 1 | 7"- <}h&0 Selection by Package ¥ TMOS , . Order the disk by requesting DK101/D. Tables 1 through 22 are shown by package type. Within the tables , . Device types shaded in Tables 1 through 8 are preferred devices recommended for new designs. TMOS Power MOSFETs Plastic Packages — TO-22QAB Table 1 — P-Channel NEW NEW NEW V(br)dss (Volts) Min 'DS(on)@ 1 MTP2P50 2 75 3-407 450


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PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
MFE9200

Abstract: BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
Text: MOTOROLA SC XSTRS/R F' 14E D I i b3b?254 00^31=1 1 § 7-, 9/-6Ô Selection by Package The , . Order the disk by requesting DK101/D. Tables 1 through 22 are shown by package type. Within the tables , . Device types shaded in Tables 1 through 8 are preferred devices recommended for new designs. TMOS Power MOSFETs Plastic Packages — TO-22QAB Table 1 — P-Channel to-220ab case 221a-04 new new new V(BR)DSS (Volts) Min rDS(on) @'d (Ohms) (Amps) Max Device "D (cont) Amps Pd* (Watts) Max Page 500 6 1


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PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics 1 Sales type STD19NE06L STD1NB50- 1 STD1NB50S- 1 STD1NB60 STD1NB60- 1 STD20N03L STD20N06 STD20NE03L STD20NE06 STD25NE03L STD2N50- 1 STD2NB40- 1 STD2NB50- 1 STD2NB52- 1 STD2NB60 STD2NB60- 1 STD30NE06 STD30NE06L STD30NF03L STD38NF03L STD3N30- 1 STD3NA50- 1 STD3NB30 STD3NB50 STD40NE03L STD45NF03L STD4N20 STD4N25- 1 STD4NA40- 1 STD4NB25 STD4NB40 STD4NB40- 1 STD4NC50 © STD5N20- 1 STD5NB20- 1


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: STS5DNE30L STS8NF30L /S AM SU N G STS6DNF30L STB11NB40 STB9NB60- 1 STB16NB25 STB19NB20 , STD16NE10 STD16NE06 - STD20NE06 1 /S AM SU N G STW8NB90 STH13NB60FI STH15NB50FI STH18NB40FI , P/N ST Nearest Preferred STD2NB25- 1 Supplier FAIRCHILD / SAMSUNG STS8NF30L , STP5NC60FP STP5NC60FP STP5NC60FP STP60NE06-16 STD2NB60- 1 STD2NB60- 1 STD12NF06L- 1 STP4NB80 STW50NB20 , STD3NB30 STD5NB20- 1 STD2HNC60 Supplier FAIRCHILD / INTERSIL STS3DNF30L STS5DNE30L STS3DPF30L


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
ml4862

Abstract: No abstract text available
Text: voltage range (5V to 20V) BLOCK DIAGRAM VvV- ODDbEEH TS 3 M icro Lin ear 1 ML4862 PIN , [ SOUT1 SW3 [ SOUT2 Vgt L SOUT3 TOP V IEW PIN DESCRIPTION PIN# NAM E 1 Rt 2 , Resistor which sets oscillator frequency 17-19 SOUT3- 1 M OSFET gate drive outputs for power , 5V Buck Regulator Switch Output 1 1 5V O U T Output of the [¿Power 5V regulator. Normally , . 50mA Logic Inputs (pins 8,13,14,15,27,30).-0.3V to 5.5V I s e n s e Inputs (pins 12 ,2 1


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PDF ML4862 ML4862 100kHz
PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D V01000J Johnson motor 2 607 022 013 2SK109 equivalent DG5043CK i3-509
Text: circuit solutions to 1 ) sense, convert, and control signals at a system’s input; 2) provide useful , fabrication is handled in the United States, where our operations include Silicon Valley’s first Class 1 , . iii 1 3 SO , -23 . T O - 1 8 . T O -7 1 . T O -7 8


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PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D V01000J Johnson motor 2 607 022 013 2SK109 equivalent DG5043CK i3-509
MSC1621

Abstract: Sj85a MMFT6661 MRF9331 TLP655G cr708A 2SD601R 2SD601 R CR704A J45CA
Text: BC848BLT1 BC848CLT1 B C 856 A LT1 BC856BLT1 BC857ALT1 BC857BLT1 B C858A LT1 B C 858B LT1 B C 8 58 C LT 1 , FR 9 2 A LT 1 B FR 9 2A LT 1 BFR92ALT1 BFR92ALT1 BFR92ALT1 BFR92ALT1 BFR93ALT1 BFR93ALT1 BFR93ALT1 , BSP62T1 BSS123LT1 BSS63LT1 BSS64LT1 B SV 5 2LT 1 BZX84C10LT1 - 39LT1 B ZX 84C 3V 3 LT 1 BZX84C3V6LT1 B ZX , BFR93ALT1 BFR93L B-R93LT1 E-FS17 "F S 1 7 L 3FS17LT1 3 FS 17S 0FS17SLT1 BFT93 BÌ3P16 IHSP52T1 B8P62T1 B ` , BZX84C9V1LT1 C N X 35S CN X 36S .F C N X 82S .F C N X 8 3S CNY17F-1-009 CNY17F-2-009 CNY17F-3-009 CNY17- 1


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PDF 5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3 5SMC27AT3 5SMC30AT3 5SMC33AT3 5SMC36AT3 MSC1621 Sj85a MMFT6661 MRF9331 TLP655G cr708A 2SD601R 2SD601 R CR704A J45CA
k 3561 MOSFET

Abstract: p20n50 TP5N05 BUZ80a equivalent P12N08 TP3N40 FD1Z0 th15n20 IRFZ22 mosfet nx 9120
Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM , Distribution Center listed on the back cover. Order the disk by requesting DK101 D. Tables 1 through 22 are , as the primary selection criteria. Device types shaded in Tables 1 through 8 are preferred devices , 221A -04 Table 1 - P-Channel V (B H |D S S M in 500 450 250 4 3 2 NEW NEW 200 0 5 0.8 1.5 2.5 4 6 3.5 2.5 180 100 0.4 03 80 0 4 4 6 4 fD S (o n ) (O h m s ) Max 6 1 >D (A m p s ) ^ D e v ic e ^ M TP


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PDF DK101 O-22QAB k 3561 MOSFET p20n50 TP5N05 BUZ80a equivalent P12N08 TP3N40 FD1Z0 th15n20 IRFZ22 mosfet nx 9120
1999 - IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Nearest Preferred STP6NB50 STD20NE03L STP16NE06L STP55NE06 STP16NE06 STP55NE06L STD16NE06L- 1 , STP55NE06 STP16NE06 STP45NE06 STD12NE06 STP20NE06L STD16NE06L STD12NE06L- 1 STP20NE06 STD16NE06 STB45NE06L* STB55NE06L STB55NE06 STD16NE06L- 1 STB60NE06-16 STD12NE06L STB55NE06 STW80NE06 , STD4NB25 STD4NB25 STD2NA40 STD5NB40 STD4NB40 STD16NE06 STD3NB50 STD2NA50 STD2NB60 STD9N10- 1 , Preferred STD9N10- 1 STD4NB25- 1 STD5NB20- 1 STD5NB20- 1 STD4NB25- 1 STDNB25- 1 STD2NA40- 1 STD2NA40- 1


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PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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